专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08617993B2 Method of reducing pattern collapse in high aspect ratio nanostructures 有权
标题翻译：降低高纵横比纳米结构中图案塌陷的方法
公开(公告)号：US08617993B2
公开(公告)日：2013-12-31
申请号：US12697862
申请日：2010-02-01
申请人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
发明人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在涉及半导体器件制造的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，防止在随后的湿清洁过程中它们被损坏。然后可以进一步处理晶片，例如湿式清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

2. 发明授权

US08480809B2 Methods for application of two-phase contaminant removal medium 有权
标题翻译：两相污染物去除介质的应用方法
公开(公告)号：US08480809B2
公开(公告)日：2013-07-09
申请号：US13351217
申请日：2012-01-16
申请人： Ji Zhu , Arjun Mendiratta , David Mui
发明人： Ji Zhu , Arjun Mendiratta , David Mui
IPC分类号： B08B3/00 , C11D11/00
CPC分类号： B08B3/02 , C11D3/2079 , C11D3/222 , C11D3/37 , C11D3/3707 , C11D3/3723 , C11D3/3753 , C11D3/3765 , C11D3/3773 , C11D3/378 , C11D3/43 , C11D7/265 , C11D7/268 , C11D7/5004 , C11D11/0047 , C11D17/0013 , C11D17/003 , Y10S134/902
摘要： A method is provided for receiving the wafer on a support, the support being configured for movement along a direction. While moving the wafer, dispensing a cleaning material to clean contaminants from the surface of the wafer, the dispensing applied as a film over a diameter length of the wafer. The cleaning material contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound. Each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, and wherein the polymers become soluble in the cleaning liquid and the solubilized polymers having long polymer chains that capture and entrap solid components and contaminants in the cleaning liquid. Then, rinsing the film off of the wafer with a rinsing meniscus. The rinsing meniscus applied along the diameter length of the wafer and the film is rinsed after the dispensing.
摘要翻译：提供了一种用于在支撑件上接收晶片的方法，所述支撑件被配置为沿着方向移动。在移动晶片时，分配清洁材料以清洁来自晶片表面的污染物，分配作为薄膜施加在晶片的直径长度上。清洁材料包含清洁液体，多种固体组分和聚合物的聚合物。多个固体组分和聚合物中的每一种都大于零且小于洗涤材料的3％，并且其中聚合物变得可溶于清洁液体，并且具有长的聚合物链的溶解聚合物捕获并捕获固体组分和污染物清洗液。然后，用冲洗弯液面从晶片上冲洗薄膜。沿着晶片的直径长度施加的冲洗弯月面，并且在分配之后冲洗薄膜。

3. 发明授权

US08314055B2 Materials and systems for advanced substrate cleaning 有权
标题翻译：用于高级基材清洗的材料和系统
公开(公告)号：US08314055B2
公开(公告)日：2012-11-20
申请号：US12503486
申请日：2009-07-15
申请人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
发明人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
IPC分类号： C11D7/32
CPC分类号： B08B7/0014 , C11D3/3746 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02071 , H01L21/6704 , H01L21/67051
摘要： The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities.
摘要翻译：本发明的实施例提供用于清洁晶片表面，特别是图案化晶片（或基板）的表面的改进的材料，装置和方法。所讨论的清洁材料，设备和方法具有在清洁具有精细特征的图案化基底而没有实质上损害特征的优点。清洁材料包括一种或多种聚合物的聚合物。清洁材料可以在宽范围的粘度和pH范围内使用以清洁不同类型的表面。清洁材料处于液相，并围绕设备特征变形以捕获衬底上的污染物。聚合物捕获污染物，防止其返回到基底表面。清洁设备设计成可以分配和冲洗具有一定粘度范围的清洁材料。

4. 发明申请

US20120115332A1 Method of Post Etch Polymer Residue Removal 审中-公开
标题翻译：后蚀刻聚合物残渣去除方法
公开(公告)号：US20120115332A1
公开(公告)日：2012-05-10
申请号：US13354322
申请日：2012-01-19
申请人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
发明人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The etching is terminated. A dry flash chemistry is applied into the plasma chamber. The plasma chamber is powered for a period of time between about 5 seconds and about 10 seconds to perform a dry flash etch. During the dry flash etch, the chamber is set to a low pressure of between about 5 mTorr and about 40 mTorr. The dry flash etch acts to weaken adhesion of the etch polymer residues to the features. The substrate is moved from plasma chamber and into a wet clean chamber for cleaning which removes the etch polymer residues during fluid cleaning.
摘要翻译：一种用于处理衬底的方法包括：在等离子体室中使用蚀刻化学法蚀刻衬底的表面，蚀刻被配置为在衬底的表面上限定一个或多个特征。这些特征由于蚀刻而具有一些蚀刻聚合物残留物。蚀刻终止。将干闪光化学物质施加到等离子体室中。等离子体室在约5秒至约10秒之间的时间内供电以进行干闪光蚀刻。在干闪光蚀刻期间，室设定在约5mTorr至约40mTorr之间的低压。干闪光蚀刻用于削弱蚀刻聚合物残留物对特征的粘附。衬底从等离子体室移动到用于清洁的湿式清洁室中，其在流体清洁期间除去蚀刻聚合物残余物。

5. 发明申请

US20080288227A1 Algorithms to predict clinical response, adherence, and shunting with thiopuriness 有权
标题翻译：用于预测临床反应，依从性和分流与硫化物的算法
公开(公告)号：US20080288227A1
公开(公告)日：2008-11-20
申请号：US11804366
申请日：2007-05-18
申请人： Peter Higgins , Ji Zhu , Akbar Waljee , Sijian Wang , Joel Joyce
发明人： Peter Higgins , Ji Zhu , Akbar Waljee , Sijian Wang , Joel Joyce
IPC分类号： G06G7/60 , A61B5/00 , G01N33/483
CPC分类号： G16H50/20 , G06F19/00
摘要： A method of using a variable set from complete blood counts and blood chemistry panels to generate a machine learned algorithm for determining the effectiveness of thiopurine treatment on inflammatory bowel disease (IBD) patients using CART, boosted trees, random forest classification, RuleFit and/or logistic regression analysis.
摘要翻译：使用来自完整血液计数和血液化学组的变量集合的方法来产生用于确定使用CART，增强树，随机森林分类，RuleFit和/或其他功能的炎症性肠病（IBD）患者硫嘌呤治疗有效性的机器学习算法逻辑回归分析。

6. 发明授权

US07294580B2 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition 有权
标题翻译：使用气体化学和碳氢化合物加成的周期调制的等离子体剥离方法
公开(公告)号：US07294580B2
公开(公告)日：2007-11-13
申请号：US10860833
申请日：2004-06-03
申请人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
发明人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
IPC分类号： H01L21/00
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

7. 发明申请

US20070240737A1 Post etch wafer surface cleaning with liquid meniscus 失效
标题翻译：用液体弯液面后蚀刻晶片表面清洁
公开(公告)号：US20070240737A1
公开(公告)日：2007-10-18
申请号：US11477299
申请日：2006-06-28
申请人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
发明人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一个清洁溶液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

8. 发明授权

US08211846B2 Materials for particle removal by single-phase and two-phase media 有权
标题翻译：用于通过单相和两相介质去除颗粒的材料
公开(公告)号：US08211846B2
公开(公告)日：2012-07-03
申请号：US12131654
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： C11D1/00 , C11D3/26 , C11D3/37
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

9. 发明申请

US20100120647A1 COMPOSITION OF A CLEANING MATERIAL FOR PARTICLE REMOVAL 有权
标题翻译：用于颗粒去除的清洁材料的组成
公开(公告)号：US20100120647A1
公开(公告)日：2010-05-13
申请号：US12267345
申请日：2008-11-07
申请人： Ji Zhu , Arjun Mendiratta , David Mui
发明人： Ji Zhu , Arjun Mendiratta , David Mui
IPC分类号： C11D3/37
CPC分类号： C11D7/5004 , C11D3/222 , C11D3/3765 , C11D3/3773 , C11D3/3776
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。为了帮助从晶片（或衬底）表面去除颗粒，聚合物的聚合物可以含有极性官能团，其可以与晶片表面上的水解颗粒建立极性极性的分子相互作用和氢键。具有大分子量的高分子化合物的聚合物形成长的聚合物链和网络。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。聚合物的聚合物还可以包括在清洁溶液中携带电荷的官能团。聚合物官能团的电荷提高了颗粒去除效率。

10. 发明授权

US07597765B2 Post etch wafer surface cleaning with liquid meniscus 失效
标题翻译：用液体弯液面后蚀刻晶片表面清洁
公开(公告)号：US07597765B2
公开(公告)日：2009-10-06
申请号：US11477299
申请日：2006-06-28
申请人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
发明人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
IPC分类号： B08B3/08 , C23G1/02
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一个清洁溶液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式