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1. 发明申请

US20050101126A1 Line edge roughness reduction for trench etch 失效
公开(公告)号：US20050101126A1
公开(公告)日：2005-05-12
申请号：US10712410
申请日：2003-11-12
申请人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

2. 发明申请

US20050277289A1 Line edge roughness reduction for trench etch 审中-公开
标题翻译：沟槽蚀刻的线边缘粗糙度降低
公开(公告)号：US20050277289A1
公开(公告)日：2005-12-15
申请号：US11205372
申请日：2005-08-16
申请人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底上的介电层中蚀刻沟槽到沟槽深度的方法。将ARC施加在电介质层上。在ARC上形成光致抗蚀剂掩模，其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻沟槽，其电介质至光致抗蚀剂蚀刻选择性为1：1至2：1。

3. 发明授权

US06949460B2 Line edge roughness reduction for trench etch 失效
公开(公告)号：US06949460B2
公开(公告)日：2005-09-27
申请号：US10712410
申请日：2003-11-12
申请人： Eric Wagganer , Helen H. Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen H. Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

4. 发明授权

US07601246B2 Methods of sputtering a protective coating on a semiconductor substrate 有权
标题翻译：在半导体衬底上溅射保护涂层的方法
公开(公告)号：US07601246B2
公开(公告)日：2009-10-13
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.
摘要翻译：将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

5. 发明申请

US20090020417A1 Methods of sputtering a protective coating on a semiconductor substrate 有权
公开(公告)号：US20090020417A1
公开(公告)日：2009-01-22
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

6. 发明授权

US07169231B2 Gas distribution system with tuning gas 有权
标题翻译：配有调节气的配气系统
公开(公告)号：US07169231B2
公开(公告)日：2007-01-30
申请号：US10318612
申请日：2002-12-13
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： C23C16/52 , C23C16/455 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67017
摘要： An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.
摘要翻译：提供了一种用于向处理室的不同区域提供不同气体的装置。提供了用于提供蚀刻气体流的气体供应。提供了一种与气体供应流体连接的分流器，用于将来自气体供给的蚀刻气体流分解成多个支腿。提供了与多个腿部中的至少一个腿流体连接的调节气体系统。

7. 发明申请

US20050133164A1 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift 有权
标题翻译：用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件
公开(公告)号：US20050133164A1
公开(公告)日：2005-06-23
申请号：US10736666
申请日：2003-12-17
申请人： Andreas Fischer , Peter Loewenhardt
发明人： Andreas Fischer , Peter Loewenhardt
IPC分类号： H01J37/32 , H01L21/00 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

8. 发明授权

US06471822B1 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma 失效
标题翻译：磁阻等离子体磁感应耦合等离子体反应器
公开(公告)号：US06471822B1
公开(公告)日：2002-10-29
申请号：US09263001
申请日：1999-03-05
申请人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
发明人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32669
摘要： The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.
摘要翻译：本发明提供一种等离子体反应器，其具有能够产生通常利用螺旋波的高密度等离子体源室。将等离子体输送到具有工件的处理室。本发明可以提供多个磁体，每个磁体纵向地围绕垂直于工件的平面的轴定位，以形成一个磁性铲斗，其延伸处理室的侧壁的长度并穿过工件插入口和真空泵开口。本发明的磁性铲斗可以形成为使得底座不需要升高到铲斗内部，或者可以由定向为每个磁体的一极的方向定向的永久磁铁形成，面对处理室的内部，或者具有相对的极相邻的磁体彼此面对，从而围绕垂直于工件的平面的轴线形成尖端。载流导体可以产生磁桶的全部或部分。本发明可以提供固定在处理室内的内壁件。内壁的全部或一部分可以被接地以提供良好限定的用于施加到工件基座的偏置功率的阳极，并且可以被加热，使得沉积物不会使其阻抗漂移。

9. 发明授权

US6071372A RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
标题翻译： RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁
公开(公告)号：US6071372A
公开(公告)日：2000-06-06
申请号：US869798
申请日：1997-06-05
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

10. 发明授权

US08430970B2 Methods for preventing corrosion of plasma-exposed yttria-coated constituents 有权
标题翻译：防止等离子体暴露的氧化钇涂层成分腐蚀的方法
公开(公告)号：US08430970B2
公开(公告)日：2013-04-30
申请号：US12852673
申请日：2010-08-09
申请人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
发明人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
IPC分类号： B08B7/00 , B08B3/00 , B08B7/04
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分由环境酸性水解引起的腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。

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