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1. 发明申请

US20050101126A1 Line edge roughness reduction for trench etch 失效
公开(公告)号：US20050101126A1
公开(公告)日：2005-05-12
申请号：US10712410
申请日：2003-11-12
申请人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

2. 发明申请

US20050277289A1 Line edge roughness reduction for trench etch 审中-公开
标题翻译：沟槽蚀刻的线边缘粗糙度降低
公开(公告)号：US20050277289A1
公开(公告)日：2005-12-15
申请号：US11205372
申请日：2005-08-16
申请人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底上的介电层中蚀刻沟槽到沟槽深度的方法。将ARC施加在电介质层上。在ARC上形成光致抗蚀剂掩模，其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻沟槽，其电介质至光致抗蚀剂蚀刻选择性为1：1至2：1。

3. 发明申请

US20050101135A1 Minimizing the loss of barrier materials during photoresist stripping 审中-公开
标题翻译：减少光致抗蚀剂剥离过程中阻挡材料的损失
公开(公告)号：US20050101135A1
公开(公告)日：2005-05-12
申请号：US10712326
申请日：2003-11-12
申请人： Rao Annapragada , Helen Zhu
发明人： Rao Annapragada , Helen Zhu
IPC分类号： G03F7/42 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768
CPC分类号： H01L21/76807 , G03F7/427 , H01L21/31138 , H01L21/31144 , H01L21/76801 , Y02P80/30
摘要： A method of removing a photoresist layer from an integrated circuit (IC) structure having an etched dielectric material with an exposed barrier layer that covers a copper interconnect. The barrier layer is composed of a material such as silicon nitride or silicon carbide. The method includes feeding a gas mixture that compromises carbon monoxide (CO) into a reactor. A plasma is then generated within the reactor. The photoresist layer is then selectively removed with little or no etching of the exposed barrier layer.
摘要翻译：从具有蚀刻介电材料的集成电路（IC）结构去除光致抗蚀剂层的方法，其具有覆盖铜互连的暴露阻挡层。阻挡层由诸如氮化硅或碳化硅的材料组成。该方法包括将一氧化碳（CO）危害的气体混合物进料到反应器中。然后在反应器内产生等离子体。然后通过很少或没有蚀刻暴露的阻挡层来选择性地去除光致抗蚀剂层。

4. 发明申请

US20060166145A1 Method providing an improved bi-layer photoresist pattern 审中-公开
标题翻译：提供改进的双层光致抗蚀剂图案的方法
公开(公告)号：US20060166145A1
公开(公告)日：2006-07-27
申请号：US11388859
申请日：2006-03-24
申请人： Hanzhong Xiao , Helen Zhu , Kuo-Lung Tang , S.M. Sadjadi
发明人： Hanzhong Xiao , Helen Zhu , Kuo-Lung Tang , S.M. Sadjadi
IPC分类号： G03F7/00
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0332 , H01L21/31144
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
摘要翻译：提供了蚀刻层中的特征的方法。在该层上形成聚合物材料的底层。在底层上形成顶层图像层。顶部图像层暴露于图案化辐射。在顶部图像层中开发出图案。图案通过减少的干蚀刻从顶部图像层转移到底层。该层被蚀刻通过底层，其中顶部图像层被完全去除，并且在蚀刻该层期间将底层用作图案掩模以将图案从底层转移到该层。

5. 发明授权

US07541475B2 Substituted thiazoles 有权
标题翻译：取代的噻唑
公开(公告)号：US07541475B2
公开(公告)日：2009-06-02
申请号：US10903553
申请日：2004-07-30
申请人： Timothy A. Robbins , Helen Zhu , Jun Shao
发明人： Timothy A. Robbins , Helen Zhu , Jun Shao
IPC分类号： C07D277/04
CPC分类号： C07D277/56 , C07C327/48
摘要： This invention is directed to processes for making substituted thiazoles. The substituted thiazole, ethyl 2-(4-hydroxyphenyl)-4-methyl-1,3-thiazole-5-carboxylate, also known as TEI-6720, is useful for treatment of gout and hyperuricemia. This compound belongs to a class of substituted thiazoles that inhibit xanthine oxidase and thus block uric acid production.
摘要翻译：本发明涉及制备取代噻唑的方法。取代的噻唑，2-（4-羟基苯基）-4-甲基-1,3-噻唑-5-羧酸乙酯，也称为TEI-6720，可用于治疗痛风和高尿酸血症。该化合物属于一类抑制黄嘌呤氧化酶并因此阻断尿酸生成的取代噻唑类。

6. 发明授权

US06949469B1 Methods and apparatus for the optimization of photo resist etching in a plasma processing system 有权
标题翻译：在等离子体处理系统中优化光刻蚀刻的方法和装置
公开(公告)号：US06949469B1
公开(公告)日：2005-09-27
申请号：US10738360
申请日：2003-12-16
申请人： Yu Cheng , Helen Zhu , Vinay V. Phoray , Hanzhong Xiao , Peter K. Loewenhardt
发明人： Yu Cheng , Helen Zhu , Vinay V. Phoray , Hanzhong Xiao , Peter K. Loewenhardt
IPC分类号： H01L21/302 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31138 , H01L21/31144
摘要： In a plasma processing system, a method of minimizing the differences in an etch rate of a photo resist material in different regions of a substrate is disclosed. The method includes introducing the substrate having in sequential order thereon, an underlying layer and the photo-resist layer. The method also includes flowing the etchant gas mixture into a plasma reactor of the plasma processing system, the etchant gas mixture comprising a flow of a fluorine containing gas between about 0.1% and about 10% of the etchant gas mixture. The method further includes striking a plasma from the gas mixture; etching the photo-resist layer with the plasma; and, removing the substrate from the plasma reactor.
摘要翻译：在等离子体处理系统中，公开了一种使衬底的不同区域中的光致抗蚀剂材料的蚀刻速率差异最小化的方法。该方法包括在其上顺序地引入具有下层和光致抗蚀剂层的衬底。该方法还包括将蚀刻剂气体混合物流入等离子体处理系统的等离子体反应器中，所述蚀刻剂气体混合物包含在蚀刻剂气体混合物的约0.1％至约10％之间的含氟气体流。该方法还包括从气体混合物中冲击等离子体; 用等离子体蚀刻光刻胶层; 并从等离子体反应器中除去衬底。

7. 发明授权

US06297163B1 Method of plasma etching dielectric materials 有权
标题翻译：等离子体蚀刻介质材料的方法
公开(公告)号：US06297163B1
公开(公告)日：2001-10-02
申请号：US09163301
申请日：1998-09-30
申请人： Helen Zhu , Roger F. Lindquist
发明人： Helen Zhu , Roger F. Lindquist
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/31144
摘要： A semiconductor manufacturing process wherein deep and narrow 0.3 micron and smaller openings are plasma etched in a dielectric layer such as doped and undoped silicon oxide. The etching gas includes at least one fluorocarbon reactant and carbon monoxide and optionally a carrier gas such as Ar. The etching process is carried out in a high density plasma reactor and is effective to etch the dielectric layer with high selectivity to the masking layer and/or a stop layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.
摘要翻译：其中深和窄的0.3微米和更小的开口的等离子体蚀刻在诸如掺杂和未掺杂的氧化硅的介电层中的半导体制造工艺。蚀刻气体包括至少一种氟碳反应物和一氧化碳以及任选的载气如Ar。蚀刻工艺在高密度等离子体反应器中进行，并且对掩蔽层和/或停止层具有高选择性蚀刻介电层是有效的。该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

8. 发明申请

US20100068885A1 SIDEWALL FORMING PROCESSES 有权
标题翻译：边框成型工艺
公开(公告)号：US20100068885A1
公开(公告)日：2010-03-18
申请号：US12233517
申请日：2008-09-18
申请人： Peter CIRIGLIANO , Helen Zhu , Ji Soo Kim , S. M. Sadjadi
发明人： Peter CIRIGLIANO , Helen Zhu , Ji Soo Kim , S. M. Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供了图案化光刻胶掩模下面的蚀刻层。执行多个侧壁形成工序。每个侧壁形成工艺包括通过执行多个循环沉积在图案化的光致抗蚀剂掩模上沉积保护层。每个循环沉积涉及至少沉积阶段，用于在图案化的光致抗蚀剂掩模的表面上沉积沉积层，以及用于在沉积层中形成垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于相对于保护层的垂直表面选择性地蚀刻保护层的水平表面的穿透蚀刻。之后，刻蚀蚀刻层以形成临界尺寸小于图案化光致抗蚀剂掩模中特征的临界尺寸的特征。

9. 发明申请

US20060258148A1 Method for resist strip in presence of regular low k and/or porous low k dielectric materials 有权
标题翻译：在常规低k和/或多孔低k电介质材料存在下的抗蚀剂条的方法
公开(公告)号：US20060258148A1
公开(公告)日：2006-11-16
申请号：US11126648
申请日：2005-05-10
申请人： Helen Zhu , Reza Sadjadi
发明人： Helen Zhu , Reza Sadjadi
IPC分类号： H01L21/4763
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.
摘要翻译：公开了用于从基底剥离光致抗蚀剂材料的两步法，其中所述基底包括位于光致抗蚀剂材料下方的低k电介质材料和覆盖光致抗蚀剂材料和低k电介质材料的聚合物膜。两步法的第一步使用氧等离子体去除聚合物膜。两步法的第二步骤使用氨等离子体去除光致抗蚀剂材料，其中第二步骤在第一步骤完成之后开始。两步光刻胶剥离工艺的每个步骤分别由工艺参数的特定值定义，包括化学，温度，压力，气体流速，射频功率和频率以及持续时间。

10. 发明授权

US07129171B2 Selective oxygen-free etching process for barrier materials 有权
标题翻译：阻隔材料的选择性无氧蚀刻工艺
公开(公告)号：US07129171B2
公开(公告)日：2006-10-31
申请号：US10685675
申请日：2003-10-14
申请人： Helen Zhu , Rao Annapragada
发明人： Helen Zhu , Rao Annapragada
IPC分类号： H01L21/302 , H01L21/4763
CPC分类号： H01L21/76807 , H01L21/31116
摘要： A method of etching a barrier layer in an integrated circuit (IC) wherein said barrier layer is composed of silicon nitride or silicon carbide. The method comprises receiving an etched IC structure having an exposed barrier layer. The method then proceeds to apply an etchant gas mixture comprising a nitrous oxide (N2O) gas and a fluoromethane (CH3F) gas. The etchant gas mixture provides a relatively high selectivity between the barrier layer to an adjacent dielectric layer.
摘要翻译：一种在集成电路（IC）中蚀刻阻挡层的方法，其中所述阻挡层由氮化硅或碳化硅构成。该方法包括接收具有暴露的阻挡层的蚀刻IC结构。然后该方法进行施加包含一氧化二氮（N 2 O 2 O）气体和氟甲烷（CH 3 3 F）F气体的蚀刻剂气体混合物。蚀刻剂气体混合物在阻挡层与相邻电介质层之间提供相对高的选择性。

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