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1. 发明授权

US08440573B2 Method and apparatus for pattern collapse free wet processing of semiconductor devices 有权
标题翻译：用于半导体器件的图形无塌陷湿法处理的方法和装置
公开(公告)号：US08440573B2
公开(公告)日：2013-05-14
申请号：US12694134
申请日：2010-01-26
申请人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
发明人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0206 , H01L21/02068 , H01L21/3081 , H01L21/31111
摘要： A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.
摘要翻译：提供了一种用于处理在制造半导体器件中使用的晶片的方法。该方法可以包括在晶片上形成高纵横比特征，其后是湿加工和干燥。在干燥期间，可能发生图案塌陷。可以修复该图案崩溃以允许对晶片进行额外的处理。在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

2. 发明申请

US20090113656A1 Apparatus for isolated bevel edge clean and method for using the same 失效
标题翻译：用于隔离斜边边缘清洁的设备及其使用方法
公开(公告)号：US20090113656A1
公开(公告)日：2009-05-07
申请号：US11429574
申请日：2006-05-05
申请人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
发明人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
IPC分类号： A47L5/38 , A47L5/00 , B08B1/04 , B08B1/00
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

3. 发明申请

US20110183522A1 METHOD AND APPARATUS FOR PATTERN COLLAPSE FREE WET PROCESSING OF SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件图案自由湿法处理方法与装置
公开(公告)号：US20110183522A1
公开(公告)日：2011-07-28
申请号：US12694134
申请日：2010-01-26
申请人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
发明人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
IPC分类号： H01L21/306 , H01L21/3065
CPC分类号： H01L21/31116 , H01L21/0206 , H01L21/02068 , H01L21/3081 , H01L21/31111
摘要： A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.
摘要翻译：提供了一种用于处理在制造半导体器件中使用的晶片的方法。该方法可以包括在晶片上形成高纵横比特征，其后是湿加工和干燥。在干燥期间，可能发生图案塌陷。可以修复该图案崩溃以允许对晶片进行额外的处理。在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

4. 发明授权

US07347915B1 Plasma in-situ treatment of chemically amplified resist 有权
标题翻译：化学放大抗蚀剂的等离子体原位处理
公开(公告)号：US07347915B1
公开(公告)日：2008-03-25
申请号：US11326934
申请日：2006-01-05
申请人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01L21/00
CPC分类号： H01L21/0273
摘要： A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.
摘要翻译：提供了通过在晶片上蚀刻层来制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。将晶片放置在处理室中。通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

5. 发明授权

US06873112B2 Method for producing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06873112B2
公开(公告)日：2005-03-29
申请号：US10779187
申请日：2004-02-13
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01J37/32 , H01Q1/36 , H01Q7/00 , H05B31/26
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.
摘要翻译：本发明提供一种用于处理衬底的方法。将基板放置在室中，其中室包括在室内的基板保持器和形成室的侧面的介电窗口。气体被提供到腔室中。天线用于产生方位角对称电场。使用方位角对称电场从气体形成大致方位对称的等离子体。在衬底的表面上产生基本均匀的加工速率。

6. 发明授权

US06744213B2 Antenna for producing uniform process rates 有权
标题翻译：用于产生均匀加工速率的天线
公开(公告)号：US06744213B2
公开(公告)日：2004-06-01
申请号：US10374868
申请日：2003-02-24
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01J724
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.
摘要翻译：一种用于通过窗口在处理室内产生电场的天线装置。通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

7. 发明申请

US20120199164A1 Methods for Using Proximity Head With Configurable Delivery 审中-公开
标题翻译：使用可配置传送的接近头的方法
公开(公告)号：US20120199164A1
公开(公告)日：2012-08-09
申请号：US13452805
申请日：2012-04-20
申请人： Mark H. Wilcoxson , Christopher J. Radin
发明人： Mark H. Wilcoxson , Christopher J. Radin
IPC分类号： B08B5/04 , B08B3/00
CPC分类号： B08B3/04 , H01L21/67051 , H01L21/6708 , H01L21/6715
摘要： A method for processing a substrate includes an operation of positioning a surface of a head proximate to a surface of the substrate. The surface of the head has a length and a plurality of ports that are configured in rows along the length of the head. Each row of ports can deliver a fluid to the surface of the substrate or deliver a vacuum to remove the fluid from the surface of the substrate. The method also includes an operation of controlling delivery of the fluid to one or more selected rows and delivery of the vacuum to one or more selected rows so that at least one meniscus is formed whose width depends on a desired exposure time of the meniscus to the surface of the substrate for a particular speed of relative movement between the head and the substrate.
摘要翻译：用于处理衬底的方法包括将头部表面靠近衬底的表面定位的操作。头部的表面具有沿头部长度配置成行的长度和多个端口。每排端口可以将流体输送到基底的表面或递送真空以从基底的表面去除流体。该方法还包括控制流体输送到一个或多个所选行并将真空传送到一个或多个所选行的操作，使得形成至少一个弯液面，其宽度取决于弯月面的期望曝光时间表面，用于在头部和基底之间相对移动的特定速度。

8. 发明授权

US08127395B2 Apparatus for isolated bevel edge clean and method for using the same 失效
标题翻译：用于隔离斜边边缘清洁的设备及其使用方法
公开(公告)号：US08127395B2
公开(公告)日：2012-03-06
申请号：US11429574
申请日：2006-05-05
申请人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
发明人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
IPC分类号： B08B7/00
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

9. 发明申请

US20080149147A1 PROXIMITY HEAD WITH CONFIGURABLE DELIVERY 审中-公开
标题翻译：配置头配置配送
公开(公告)号：US20080149147A1
公开(公告)日：2008-06-26
申请号：US11746616
申请日：2007-05-09
申请人： Mark H. Wilcoxson , Christopher J. Radin
发明人： Mark H. Wilcoxson , Christopher J. Radin
IPC分类号： B08B3/14
CPC分类号： B08B3/04 , H01L21/67051 , H01L21/6708 , H01L21/6715
摘要： An apparatus for processing a substrate is disclosed. The apparatus includes a proximity head having a surface that can be interfaced in proximity to a surface of a substrate. The proximity head has a plurality of dispensing ports capable of dispensing a first process mixture and a second process mixture to the surface of the substrate. The proximity head also has a plurality of removal ports capable of removing the first and second process mixtures from the surface of the substrate. The apparatus also has a distribution manifold connected to the plurality of dispensing ports for dispensing the first process mixture and second process mixture. The distribution manifold is connected to the plurality of removal ports, and is structured to define selected regions of the proximity head for delivery and removal of the first process mixture and the second process mixture.
摘要翻译：公开了一种用于处理衬底的设备。该装置包括具有能够接近衬底表面的表面的接近头。邻近头具有能够将第一工艺混合物和第二工艺混合物分配到衬底表面的多个分配端口。接近头还具有能够从衬底的表面去除第一和第二工艺混合物的多个移除端口。该设备还具有连接到多个分配端口的分配歧管，用于分配第一处理混合物和第二处理混合物。分配歧管连接到多个移除端口，并且构造成限定邻近头部的选定区域，用于递送和移除第一处理混合物和第二处理混合物。

10. 发明授权

US06341574B1 Plasma processing systems 有权
标题翻译：等离子体处理系统
公开(公告)号：US06341574B1
公开(公告)日：2002-01-29
申请号：US09439661
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , David J. Hemker , Mark H. Wilcoxson , Andras Kuthi
发明人： Andrew D. Bailey, III , Alan M. Schoepp , David J. Hemker , Mark H. Wilcoxson , Andras Kuthi
IPC分类号： C23C1600
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.
摘要翻译：一种用于处理衬底的等离子体处理系统，其包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。等离子体处理室没有单独的等离子体产生室。等离子体处理室具有上端和下端。等离子体处理系统包括设置在等离子体处理室的上端的耦合窗口和当衬底设置在等离子体处理室内用于处理时设置在由衬底限定的平面上方的RF天线布置。等离子体处理系统还包括设置在由衬底限定的平面之上的电磁体装置。当至少一个直流电被提供给电磁体装置时，电磁体装置构造成导致等离子体处理室内的可耦合窗口和天线附近的区域内的可控磁场的径向变化。径向变化对影响衬底上的加工均匀性是有效的。等离子体处理系统还包括耦合到电磁体装置的直流电源。直流电源具有控制器来改变至少一个直流电流的大小，从而改变等离子体处理室内靠近天线的可控磁场中的径向变化，以改善穿过衬底的加工均匀性。

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