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1. 发明申请

US20050133164A1 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift 有权
标题翻译：用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件
公开(公告)号：US20050133164A1
公开(公告)日：2005-06-23
申请号：US10736666
申请日：2003-12-17
申请人： Andreas Fischer , Peter Loewenhardt
发明人： Andreas Fischer , Peter Loewenhardt
IPC分类号： H01J37/32 , H01L21/00 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

2. 发明申请

US20110263130A1 METHODS FOR RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 有权
标题翻译：一种窄带隙电容耦合反应器的RF脉冲方法
公开(公告)号：US20110263130A1
公开(公告)日：2011-10-27
申请号：US13177627
申请日：2011-07-07
申请人： Peter Loewenhardt , Mukund Sriniyasan , Andreas Fischer
发明人： Peter Loewenhardt , Mukund Sriniyasan , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.
摘要翻译：提供了一种用于在处理室中的衬底上蚀刻层的方法，其中包括第一电极和第二电极的处理室以及与第二电极相对设置的第一电极。该方法包括将基板放置在第二电极上并向处理室提供蚀刻气体。该方法还包括向处理室提供第一射频（RF）信号并调制第一RF信号。该方法还包括向处理室提供第二RF信号并调制第二RF信号。

3. 发明授权

US07597816B2 Wafer bevel polymer removal 有权
标题翻译：晶圆斜面聚合物去除
公开(公告)号：US07597816B2
公开(公告)日：2009-10-06
申请号：US10934081
申请日：2004-09-03
申请人： Jeremy Chang , Andreas Fischer , Peter Loewenhardt
发明人： Jeremy Chang , Andreas Fischer , Peter Loewenhardt
IPC分类号： H01L21/302
CPC分类号： H01L21/02087 , H01J2237/3342 , H01L21/31116 , H01L21/31138 , Y10S134/902 , Y10S438/906
摘要： A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.
摘要翻译：提供一种形成半导体器件的方法。将具有设置在光致抗蚀剂掩模下方的介电层的晶片放置在蚀刻室中。蚀刻介电层。晶片升高。提供清洁气体。从清洁气体形成等离子体。使用来自清洁气体的等离子体去除在晶片的斜面上形成的聚合物。从蚀刻室移除晶片。

4. 发明授权

US07861667B2 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode 有权
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
公开(公告)号：US07861667B2
公开(公告)日：2011-01-04
申请号：US10445146
申请日：2003-05-23
申请人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
发明人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

5. 发明申请

US20060051967A1 Wafer bevel polymer removal 有权
公开(公告)号：US20060051967A1
公开(公告)日：2006-03-09
申请号：US10934081
申请日：2004-09-03
申请人： Jeremy Chang , Andreas Fischer , Peter Loewenhardt
发明人： Jeremy Chang , Andreas Fischer , Peter Loewenhardt
IPC分类号： H01L21/302 , B44C1/22 , C23F1/00
CPC分类号： H01L21/02087 , H01J2237/3342 , H01L21/31116 , H01L21/31138 , Y10S134/902 , Y10S438/906
摘要： A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.

6. 发明授权

US08573153B2 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode 有权
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
公开(公告)号：US08573153B2
公开(公告)日：2013-11-05
申请号：US12954060
申请日：2010-11-24
申请人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
发明人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

7. 发明授权

US08337713B2 Methods for RF pulsing of a narrow gap capacitively coupled reactor 有权
标题翻译：窄间隙电容耦合反应器的RF脉冲的方法
公开(公告)号：US08337713B2
公开(公告)日：2012-12-25
申请号：US13177627
申请日：2011-07-07
申请人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
发明人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.
摘要翻译：提供了一种用于在处理室中的衬底上蚀刻层的方法，其中包括第一电极和第二电极的处理室以及与第二电极相对设置的第一电极。该方法包括将基板放置在第二电极上并向处理室提供蚀刻气体。该方法还包括向处理室提供第一射频（RF）信号并调制第一RF信号。该方法还包括向处理室提供第二RF信号并调制第二RF信号。

8. 发明授权

US06841943B2 Plasma processor with electrode simultaneously responsive to plural frequencies 有权
标题翻译：等离子体处理器，电极同时响应多个频率
公开(公告)号：US06841943B2
公开(公告)日：2005-01-11
申请号：US10180978
申请日：2002-06-27
申请人： Vahid Vahedi , Peter Loewenhardt , Albert Ellingboe , Andras Kuthi , Andreas Fischer
发明人： Vahid Vahedi , Peter Loewenhardt , Albert Ellingboe , Andras Kuthi , Andreas Fischer
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。直流接地延伸部基本上与第一电极对准。在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比被耦合到包括第一电极和延伸的路径，而不是第二频率的路径电极。施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

9. 发明授权

US06744212B2 Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions 有权
标题翻译：用于在非常高的气流和RF功率密度条件下限制RF等离子体的等离子体处理装置和方法
公开(公告)号：US06744212B2
公开(公告)日：2004-06-01
申请号：US10077072
申请日：2002-02-14
申请人： Andreas Fischer , Dave Trussell , Bill Kennedy , Peter Loewenhardt
发明人： Andreas Fischer , Dave Trussell , Bill Kennedy , Peter Loewenhardt
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32642
摘要： The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode, a power generator, a second electrode, at least one confinement ring, and a ground extension surrounding the first electrode. The first electrode is configured to receive a workpiece and has an associated first electrode area. The power generator is operatively coupled to the first electrode, and the power generator is configured to generate RF power that is communicated to the first electrode. The second electrode is disposed at a distance from the first electrode. The second electrode is configured to provide a complete electrical circuit for RF power communicated from the first electrode. Additionally, the second electrode has a second electrode area that is greater than the first electrode area. At least one confinement ring is configured to assist confine the plasma. The plasma is generated with the RF power being communicated between the first electrode and the gas residing inside the confinement rings. The ground extension drains charge from the plasma boundaries with a grounded conductive surface.
摘要翻译：本发明包括用于将等离子体限制在等离子体处理室内的系统和方法。等离子体处理装置包括第一电极，发电机，第二电极，至少一个限制环和围绕第一电极的接地延伸部。第一电极被配置为接收工件并且具有相关联的第一电极区域。功率发生器可操作地耦合到第一电极，并且发电机被配置为产生与第一电极连通的RF功率。第二电极设置在离第一电极一定距离处。第二电极被配置为提供从第一电极传送的RF功率的完整电路。另外，第二电极具有大于第一电极区域的第二电极区域。至少一个限制环被配置成辅助限制等离子体。产生等离子体，其中RF功率在第一电极和驻留在限制环内部的气体之间连通。接地延长线从等离子体边界带有接地导电表面的电荷。

10. 发明授权

US07976673B2 RF pulsing of a narrow gap capacitively coupled reactor 有权
标题翻译：窄间隙电容耦合反应器的RF脉冲
公开(公告)号：US07976673B2
公开(公告)日：2011-07-12
申请号：US10431030
申请日：2003-05-06
申请人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
发明人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的设备。提供了一种电容耦合处理室。提供气源。第一和第二电极设置在处理室内。第一射频电源电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源电连接到第一和第二电极中的至少一个。第一调制控制连接到第一射频电源，以提供对第一射频电源的受控调制。

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