专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5757409A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
公开(公告)号：US5757409A
公开(公告)日：1998-05-26
申请号：US644089
申请日：1996-05-10
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

2. 发明授权

US5557314A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
标题翻译：曝光方法和图案数据准备系统，图案数据准备方法和掩模以及曝光装置
公开(公告)号：US5557314A
公开(公告)日：1996-09-17
申请号：US77411
申请日：1993-06-16
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.
摘要翻译：通过重复图案和非重复图案的期望图案，可以实现高可靠性的选择性图案曝光。获得曝光技术以提高图案数据的准备效率并确保孔径图案的检查。通过本发明，电子束被用作聚焦光束，并且用于传送半导体集成电路等的多个图形的重复图案和非重复图案的批传送系统的图案曝光装置包括用于控制的EB绘图部分光束和照射光束到样品上，控制I / O部分，绘图控制部分和数据存储部分。在EB绘图部分中，半导体晶片安装在平台上，并且在从电子束源到舞台的电子束的路径中，安装第一掩模，消隐电极，电子透镜，第一偏转器，第二透镜偏转器，第二掩模和第三偏转器。

3. 发明授权

US5250812A Electron beam lithography using an aperture having an array of repeated unit patterns 失效
标题翻译：使用具有重复单元图案阵列的孔的电子束光刻
公开(公告)号：US5250812A
公开(公告)日：1993-10-05
申请号：US858868
申请日：1992-03-27
申请人： Fumio Murai , Shinji Okazaki , Haruo Yoda , Yukinobu Shibata , Akira Tsukizoe
发明人： Fumio Murai , Shinji Okazaki , Haruo Yoda , Yukinobu Shibata , Akira Tsukizoe
IPC分类号： H01J37/317 , H01J37/04
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , H01J2237/31776
摘要： An electron beam lithography apparatus is disclosed which has an aperture plate provided with an aperture including an array of repeated unit patterns and an ordinary aperture of a rectangular shape. A region free of the influence of a proximity effect is delineated using the former aperture, and a region affected by the proximity effect is delineated using the latter aperture. The number of repeated unit patterns included in the former aperture is determined considering the number of repeated unit patterns included in a pattern array to be delineated on a substrate. Thereby, the number of electron beam shots is reduced. A plurality of apertures having slightly different aperture widths may be provided for always keeping a pattern line width constant.
摘要翻译：公开了一种电子束光刻设备，其具有设置有包括重复单元图案阵列和矩形形状的普通孔径的孔的孔板。使用前一个孔径来描绘没有接近效应的影响的区域，并且使用后一个孔来描绘受邻近效应影响的区域。考虑包括在衬底上要描绘的图案阵列中的重复单位图案的数量来确定包括在前一孔径中的重复单位图案的数量。因此，电子束拍摄的数量减少。可以提供具有略微不同的孔径宽度的多个孔，以始终保持图案线宽度恒定。

4. 发明授权

US5206517A Electron beam lithographic method 失效
标题翻译：电子束光刻法
公开(公告)号：US5206517A
公开(公告)日：1993-04-27
申请号：US798905
申请日：1991-11-27
申请人： Yukinobu Shibata , Ikuo Takada , Akira Hirakawa , Tadao Konishi
发明人： Yukinobu Shibata , Ikuo Takada , Akira Hirakawa , Tadao Konishi
IPC分类号： H01L21/027 , H01J37/302 , H01J37/317 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764
摘要： An electron beam lithographic method in which a sample is irradiated with an electron beam, wherein an extreme point of a contour of a pattern is calculated and a lithographic area is divided into a first region that is surrounded by straight lines drawn from the extreme point in parallel with the x-axis and the y-axis of the sample and by said pattern, and second regions in order to be lithographed.
摘要翻译：一种电子束光刻方法，其中用电子束照射样品，其中计算图案的轮廓的极值点，并且将光刻区域划分为由从最远点绘制的直线包围的第一区域平行于样品的x轴和y轴以及所述图案，以及第二区域以进行平版印刷。

5. 发明授权

US5424550A Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US5424550A
公开(公告)日：1995-06-13
申请号：US183770
申请日：1994-01-21
申请人： Masamichi Kawano , Masahide Okumura , Haruo Yoda , Yukinobu Shibata , Tadao Konishi
发明人： Masamichi Kawano , Masahide Okumura , Haruo Yoda , Yukinobu Shibata , Tadao Konishi
IPC分类号： H01L21/30 , H01J37/302 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/3174
摘要： A charged particle beam exposure apparatus includes an irradiator for irradiating a sample with a charged particle beam, an analog controller for analog controlling the charged particle beam, a digital controller for digital controlling the analog controller, and a digital transmission path connecting the analog controller to the digital controller. The analog controller is disposed inside a room, and the digital controller is disposed outside the room.
摘要翻译：带电粒子束曝光装置包括用于对带有粒子束的样品进行照射的照射器，用于模拟控制带电粒子束的模拟控制器，用于数字控制模拟控制器的数字控制器和将模拟控制器连接到数字控制器。模拟控制器设置在房间内，数字控制器设置在房间外。

6. 发明授权

US5281827A Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US5281827A
公开(公告)日：1994-01-25
申请号：US763145
申请日：1991-09-20
申请人： Masamichi Kawano , Masahide Okumura , Haruo Yoda , Yukinobu Shibata , Tadao Konishi
发明人： Masamichi Kawano , Masahide Okumura , Haruo Yoda , Yukinobu Shibata , Tadao Konishi
IPC分类号： H01L21/30 , H01J37/302 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/3174
摘要： A column section is disposed within a thermostatic chamber within a clean room, a section for analog controlling each portion of the column section is disposed within the clean room and outside of the thermostatic chamber, and a section for digital controlling the analog control section is disposed outside of the clean room.
摘要翻译：柱部分设置在洁净室内的恒温室中，用于模拟控制柱部分的每个部分的部分设置在洁净室内和恒温室外部，并且设置用于数字控制模拟控制部分的部分在洁净室外。

7. 发明授权

US5371373A Electron beam lithography method and apparatus separating repetitive and non-repetitive pattern data 失效
标题翻译：电子束光刻方法和设备分离重复和非重复图案数据
公开(公告)号：US5371373A
公开(公告)日：1994-12-06
申请号：US152958
申请日：1993-11-16
申请人： Yukinobu Shibata , Akira Hirakawa
发明人： Yukinobu Shibata , Akira Hirakawa
IPC分类号： H01L21/027 , H01J37/302 , H01J37/04
CPC分类号： H01J37/3026 , H01J2237/31764
摘要： Not only for a memory device having a high repeatabitlity but also for a device having a low repeatability, there can be realized an electron beam lithography method which can carry out high speed processing of the device with a less number of lithography shots as well as an apparatus therefor. An input pattern is classified into repetitive and non-repetitive patterns. The classified non-repetitive pattern is further classified into unit areas, i.e., repetitive and no-repetitive unit patterns. Next, the non-repetitive unit patterns are converted into lithography data, while the repetitive unit patterns and repetitive patterns are composed on the lithography data of the non-repetitive unit patterns. A result of composing the repetitive unit patterns and repetitive patterns and the lithography data of the non-repetitive unit patterns is sorted according to a lithography sequence and output as the lithography data. Thus, the repetitive unit areas are extracted from the non-repetitive patterns and processed in the same manner as the repetitive patterns to thereby reduce the number of lithography shots.
摘要翻译：不仅对于具有高重复性的存储器件，而且对于具有低重复性的器件，可以实现电子束光刻方法，该方法可以以较少数量的光刻照相器件执行器件的高速处理装置。输入模式分为重复和非重复模式。分类的非重复模式进一步分为单位区域，即重复和不重复单位模式。接下来，将非重复单元图案转换成光刻数据，而重复单元图案和重复图案在非重复单元图案的光刻数据上组成。根据光刻序列对不重复单位图案的重复单位图案，重复图案和光刻数据的组合进行分类，作为光刻数据输出。因此，从非重复图案中提取重复单位区域并以与重复图案相同的方式进行处理，从而减少光刻照片的数量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式