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1. 发明授权

US5502306A Electron beam inspection system and method 失效
标题翻译：电子束检查系统及方法
公开(公告)号：US5502306A
公开(公告)日：1996-03-26
申请号：US214377
申请日：1994-03-17
申请人： Dan Meisburger , Alan D. Brodie , Curt Chadwick , Anil Desai , Hans Dohse , Dennis Emge , John Greene , Ralph Johnson , Ming-Yie Ling , John McMurtry , Barry Becker , Ray Paul , Mike Robinson , Richard Simmons , David E. A. Smith , John Taylor , Lee Veneklasen , Dean Walters , Paul Wieczorek , Sam Wong , April Dutta , Surendra Lele , Kirkwood Rough , Henry Pearce-Percy , Jack Y. Jau , Chun C. Lin , Hoi T. Nguyen , Yen-Jen Oyang , Timothy L. Hutcheson , David J. Clark , Chung-Shih Pan , Chetana Bhaskar , Chris Kirk , Eric Munro
发明人： Dan Meisburger , Alan D. Brodie , Curt Chadwick , Anil Desai , Hans Dohse , Dennis Emge , John Greene , Ralph Johnson , Ming-Yie Ling , John McMurtry , Barry Becker , Ray Paul , Mike Robinson , Richard Simmons , David E. A. Smith , John Taylor , Lee Veneklasen , Dean Walters , Paul Wieczorek , Sam Wong , April Dutta , Surendra Lele , Kirkwood Rough , Henry Pearce-Percy , Jack Y. Jau , Chun C. Lin , Hoi T. Nguyen , Yen-Jen Oyang , Timothy L. Hutcheson , David J. Clark , Chung-Shih Pan , Chetana Bhaskar , Chris Kirk , Eric Munro
IPC分类号： G01B15/00 , G01B15/08 , G01N23/04 , G01N23/203 , G01N23/225 , G01R31/307 , G03F1/08 , G03F1/16 , H01J37/147 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/027 , H01L21/66 , H01J37/26
CPC分类号： H01J37/28 , G01R31/307 , H01J2237/063 , H01J2237/184 , H01J2237/204 , H01J2237/24495 , H01J2237/30438
摘要： There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means. To function most efficiently there is also a vacuum means for evacuating and repressurizing a chamber containing the substrate. The vacuum means can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum means can simultaneously evacuate a plurality of substrates prior to inspection and repressurize of the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison means for comparing the pattern on the substrate with a second pattern.
摘要翻译：公开了用于粒子扫描系统和自动检查系统的方法和装置的许多实施例。在其中的每一个中，粒子束被引导到用于扫描该衬底的衬底的表面。还包括一些检测器，用于检测来自基底的二次粒子，背散射粒子和透射粒子中的至少一个。衬底被安装在x-y平台上，以在衬底被/粒子束扫描的过程中提供至少一个自由度。衬底也在其表面上经受电场以加速次级颗粒。该系统还具有准确地测量衬底相对于带电粒子束的位置的能力。另外，存在用于最初对准在粒子束装置下面的衬底的光学对准装置。为了最有效地起作用，还有一种用于对含有基底的腔室进行抽空和再加压的真空装置。真空装置可用于将一个基板保持在真空状态，而第二个装载/卸载，抽真空或再加压。或者，真空装置可以在检查之后同时抽空多个基板，同时在检查之后检查并重新加压相同的多个基板。在检查配置中，还存在用于将衬底上的图案与第二图案进行比较的比较装置。

2. 发明授权

US5578821A Electron beam inspection system and method 失效
标题翻译：电子束检查系统及方法
公开(公告)号：US5578821A
公开(公告)日：1996-11-26
申请号：US371458
申请日：1995-01-11
申请人： Dan Meisberger , Alan D. Brodie , Anil A. Desai , Dennis G. Emge , Zhong-Wei Chen , Richard Simmons , Dave E. A. Smith , April Dutta , J. Kirkwood H. Rough , Leslie A. Honfi , Henry Pearce-Percy , John McMurtry , Eric Munro
发明人： Dan Meisberger , Alan D. Brodie , Anil A. Desai , Dennis G. Emge , Zhong-Wei Chen , Richard Simmons , Dave E. A. Smith , April Dutta , J. Kirkwood H. Rough , Leslie A. Honfi , Henry Pearce-Percy , John McMurtry , Eric Munro
IPC分类号： G01B15/00 , G01B15/08 , G01N23/04 , G01N23/203 , G01N23/225 , G01R31/28 , G01R31/302 , G03F1/08 , G03F1/16 , H01J37/28 , H01J37/30 , H01L21/027 , H01L21/66 , H01J37/00
CPC分类号： H01J37/28 , H01J37/3005 , H01J2237/2817
摘要： A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment system for initially aligning the substrate beneath the charged particle beam. To function most efficiently there is also a vacuum system for evacuating and repressurizing a chamber containing the substrate. The vacuum system can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum system can simultaneously evacuate a plurality of substrates prior to inspection and repressurize the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison system for comparing the pattern on the substrate with a second pattern.
摘要翻译：一种带电粒子扫描系统和自动检查系统的方法和装置，包括微电路制造中使用的晶片和掩模。带电粒子束被引导到用于扫描该衬底的衬底的表面，并且包括选择的检测器以检测来自衬底的次级带电粒子，反向散射带电粒子和透射带电粒子中的至少一个。衬底被安装在x-y平台上以在通过带电粒子束扫描衬底的同时提供至少一个自由度。衬底也在其表面上经受电场以加速次级带电粒子。该系统便于对电荷敏感绝缘基板上的近光束能量进行检查，并且能够准确地测量基板相对于带电粒子束的位置。另外，存在用于使带电粒子束下面的衬底最初对准的光学对准系统。为了最有效地起作用，还有一个真空系统用于对含有基底的腔室进行抽空和再加压。真空系统可用于将一个基板保持在真空状态，而第二个基板正在装载/卸载，抽真空或重新加压。或者，真空系统可以在检查之前同时抽空多个基板，并且在检查之后重新加压相同的多个基板。在检查配置中，还存在用于将衬底上的图案与第二图案进行比较的比较系统。

3. 发明授权

US5717204A Inspecting optical masks with electron beam microscopy 失效
标题翻译：用电子束显微镜检查光学掩模
公开(公告)号：US5717204A
公开(公告)日：1998-02-10
申请号：US606854
申请日：1996-02-26
申请人： Dan Meisburger , Alan D. Brodie , Zhong-Wei Chen , Jack Y. Jau
发明人： Dan Meisburger , Alan D. Brodie , Zhong-Wei Chen , Jack Y. Jau
IPC分类号： H01J37/28 , H01J37/30 , H01J37/26
CPC分类号： H01J37/28 , H01J37/3005 , H01J2237/2817
摘要： An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
摘要翻译：一种装置通过光学相移掩模扫描电子束，并自动检查掩模以确定相移掩模的特征和缺陷的分类。电子束指向掩模的表面以扫描该掩模，并且提供检测器以从掩模的表面测量次级和背散射带电粒子。掩模安装在x-y平台上，以在掩模被电子束扫描时提供至少一个自由度。通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征，可以检测掩模的各种物理特征以及它们的尺寸和位置。也可以确定铬层的厚度。在检查配置中，还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。

4. 发明授权

US5665968A Inspecting optical masks with electron beam microscopy 失效
标题翻译：用电子束显微镜检查光学掩模
公开(公告)号：US5665968A
公开(公告)日：1997-09-09
申请号：US607191
申请日：1996-02-26
申请人： Dan Meisburger , Alan D. Brodie , Zhong-Wei Chen , Jack Y. Jau , Brian J. Grenon
发明人： Dan Meisburger , Alan D. Brodie , Zhong-Wei Chen , Jack Y. Jau , Brian J. Grenon
IPC分类号： H01J37/28 , H01J37/30 , H01J37/26
CPC分类号： H01J37/28 , H01J37/3005 , H01J2237/2817
摘要： There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
摘要翻译：公开了一种通过光学相移掩模扫描电子束并自动检查掩模以确定相移掩模的特征和缺陷分类的装置。电子束指向掩模的表面以扫描该掩模，并且提供检测器以从掩模的表面测量次级和背散射带电粒子。掩模安装在x-y平台上，以在掩模被电子束扫描时提供至少一个自由度。通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征，可以检测掩模的各种物理特征以及它们的尺寸和位置。也可以确定铬层的厚度。在检查配置中，还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。

5. 发明申请

US20160358742A1 CHARGE DRAIN COATING FOR ELECTRON-OPTICAL MEMS 有权
标题翻译：电光MEMS的充电排水涂层
公开(公告)号：US20160358742A1
公开(公告)日：2016-12-08
申请号：US14052610
申请日：2013-10-11
申请人： William M. Tong , Alan D. Brodie , Jeffrey Elam , Anil Mane
发明人： William M. Tong , Alan D. Brodie , Jeffrey Elam , Anil Mane
IPC分类号： H01J37/06 , H01J37/12 , C23C16/32 , C23C16/40 , C23C16/34 , H01J37/317 , C23C16/455
CPC分类号： C23C16/45529 , B81B3/0008 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , H01J37/026 , H01J37/06 , H01J37/12 , H01J37/3174 , H01J2237/1205 , H01J2237/31794
摘要： A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.
摘要翻译：公开了一种与电荷放电涂层相关的系统和方法。可以将电荷漏极涂层施加到电子 - 光学器件的表面以排出与电荷漏极涂层接触的电子，使得电子 - 电子器件的性能不会受到电子电荷积聚的阻碍。电荷漏极涂层可以包括聚集成嵌入高介电绝缘材料中的簇的掺杂材料。电荷漏极涂层可以沉积到电子 - 光学器件的小透镜的内表面上。

6. 发明授权

US07405402B1 Method and apparatus for aberration-insensitive electron beam imaging 有权
标题翻译：用于像差不敏感电子束成像的方法和装置
公开(公告)号：US07405402B1
公开(公告)日：2008-07-29
申请号：US11360930
申请日：2006-02-22
申请人： Srinivas Vedula , Amir Azordegan , Laurence Hordon , Alan D. Brodie , Gian Francesco Lorusso , Takuji Tada
发明人： Srinivas Vedula , Amir Azordegan , Laurence Hordon , Alan D. Brodie , Gian Francesco Lorusso , Takuji Tada
IPC分类号： G01N23/00 , G21K7/00 , H01J3/14
CPC分类号： G01N23/04 , H01J37/21 , H01J37/28 , H01J2237/0492 , H01J2237/153 , H01J2237/2817
摘要： One embodiment relates to an electron beam apparatus for automated imaging of a substrate surface. An electron source is configured to emit electrons, and a gun lens is configured to focus the electrons emitted by the electron source so as to form an electron beam. A condenser lens system is configured to receive the electron beam and to reduce its numerical aperture to an ultra-low numerical aperture. An objective lens is configured to focus the ultra-low numerical aperture beam onto the substrate surface. Other embodiments are also disclosed.
摘要翻译：一个实施例涉及用于衬底表面的自动成像的电子束装置。电子源被配置为发射电子，并且枪形透镜被配置为聚焦由电子源发射的电子以形成电子束。聚光透镜系统被配置为接收电子束并且将其数值孔径减小到超低数值孔径。物镜被配置为将超低数值孔径光束聚焦到衬底表面上。还公开了其他实施例。

7. 发明授权

US09040942B1 Electron beam lithography with linear column array and rotary stage 有权
标题翻译：具有线性柱阵列和旋转台的电子束光刻
公开(公告)号：US09040942B1
公开(公告)日：2015-05-26
申请号：US12008517
申请日：2008-01-11
申请人： Keith Standiford , Alan D. Brodie
发明人： Keith Standiford , Alan D. Brodie
IPC分类号： G21K5/04 , H01J37/04
CPC分类号： H01J37/04 , H01J37/3007 , H01J37/3177 , H01J2237/201 , H01J2237/31789
摘要： One embodiment relates to an apparatus for electron beam lithography which includes a linear array of reflection electron beam lithography columns and a rotary stage. Each column is separately controllable to write a portion of a lithographic pattern onto a substrate. The rotary stage is configured to hold multiple substrates and to be rotated under the linear array of reflection electron beam lithography columns. Another embodiment relates to a method of electron beam lithography which includes simultaneously rotating and linearly translating a stage holding a plurality of wafers, and writing a lithography pattern using a linear array of reflection electron beam lithography columns over the stage. Each said column traverses a spiral path over the stage as the stage is rotated and linearly translated. Other embodiments, aspects and feature are also disclosed.
摘要翻译：一个实施例涉及一种用于电子束光刻的装置，其包括反射电子束光刻柱和旋转台的线性阵列。每列可分开控制，以将一部分平版印刷图案写入基板上。旋转台被配置为保持多个基板并且在反射电子束光刻柱的线性阵列下旋转。另一实施例涉及电子束光刻的方法，其包括同时旋转和线性平移保持多个晶片的台，以及使用反射电子束光刻柱的线性阵列在平台上书写光刻图案。当舞台旋转并线性平移时，每个所述列横过舞台上的螺旋路径。还公开了其它实施例，方面和特征。

8. 发明授权

US07091486B1 Method and apparatus for beam current fluctuation correction 有权
标题翻译：射束电流波动校正的方法和装置
公开(公告)号：US07091486B1
公开(公告)日：2006-08-15
申请号：US10938841
申请日：2004-09-09
申请人： Mark A. McCord , Alan D. Brodie
发明人： Mark A. McCord , Alan D. Brodie
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01N23/04 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/24 , H01J37/244 , H01J37/28 , H01J37/3174
摘要： One embodiment disclosed relates to an electron beam imaging apparatus. An electron source is configured to generate an electron beam, and a beam-limiting aperture is configured to block a portion of the electron beam and to allow transmission of another portion of the electron beam through the aperture. A first detector is configured to detect scattered electrons emitted by the aperture due to the blocked portion of the electron beam. The imaging apparatus may also include a second detector configured to detect scattered electrons emitted by the sample due to impingement of the transmitted portion of the electron beam. A gain control device may also be included to adjust a gain of a detected signal derived from the second detector using a control signal derived from the first detector. Another embodiment disclosed relates to an electron beam lithography apparatus. The lithography apparatus may adjust a pixel dwell time based on a control signal derived from the scattered electrons emitted by the aperture.
摘要翻译：公开的一个实施例涉及一种电子束成像装置。电子源被配置为产生电子束，并且束限制孔被配置为阻挡电子束的一部分并且允许电子束的另一部分通过孔传播。第一检测器被配置为检测由于电子束的阻挡部分而由孔发射的散射电子。成像装置还可以包括第二检测器，其被配置为检测由于电子束的透射部分的撞击而由样品发射的散射电子。还可以包括增益控制装置，以使用从第一检测器导出的控制信号来调整从第二检测器导出的检测信号的增益。所公开的另一实施例涉及电子束光刻设备。光刻设备可以基于从孔径发射的散射电子得到的控制信号来调整像素驻留时间。

9. 发明授权

US06617587B2 Electron optics for multi-beam electron beam lithography tool 失效
标题翻译：多光束电子束光刻工具的电子光学
公开(公告)号：US06617587B2
公开(公告)日：2003-09-09
申请号：US10243585
申请日：2002-09-12
申请人： N. William Parker , Alan D. Brodie , George Xinsheng Guo , Edward M. Yin , Michael C. Matter
发明人： N. William Parker , Alan D. Brodie , George Xinsheng Guo , Edward M. Yin , Michael C. Matter
IPC分类号： H01J37147
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J37/3177
摘要： A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur. An electron gun is disclosed that uses microfabricated field emission sources and a microfabricated aperture-deflector assembly. The aperture-deflector assembly acts as a perfect lens in focusing, steering and blanking a multipicity of electron beams through the back focal plane of an immersion lens located at the bottom of the column. Beam blanking can be performed using a gating signal to decrease beam blur during writing on the wafer.
摘要翻译：本文公开了一种能够在高通量，多列，多光束电子束光刻系统中使用的电荷粒子光学列。该柱具有以下特性：纯静电成分; 小柱占地面积（20平方米）; 多个单独聚焦的电荷粒子束; 同时在晶圆上同时扫描所有光束以增加景深; 并且用于减少光束模糊的带电粒子束的共轭消隐。公开了一种电子枪，其使用微制造的场致发射源和微制造的孔径偏转器组件。孔径偏转器组件用作聚焦，转向和消隐通过位于塔底部的浸没透镜的后焦平面的多个电子束的完美透镜。可以使用门控信号进行光束消隐，以减少在晶片上写入期间的光束模糊。

10. 发明申请

US20180037993A1 DIGITAL PATTERN GENERATOR HAVING CHARGE DRAIN COATING 审中-公开
公开(公告)号：US20180037993A1
公开(公告)日：2018-02-08
申请号：US15786358
申请日：2017-10-17
申请人： William M. Tong , Alan D. Brodie , Jeffrey Elam , Anil Mane
发明人： William M. Tong , Alan D. Brodie , Jeffrey Elam , Anil Mane
IPC分类号： C23C16/455 , C23C16/32 , C23C16/34 , H01J37/02 , B81B3/00 , H01J37/317 , C23C16/40 , H01J37/12
CPC分类号： C23C16/45529 , B81B3/0008 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , H01J37/026 , H01J37/06 , H01J37/12 , H01J37/3174 , H01J2237/1205 , H01J2237/31794
摘要： A digital pattern generator has a MEMS substrate with a plurality of doping layers and a plurality of insulating layers between respective doping layers. A plurality of lenslets are formed as holes through the substrate. A charge drain coating is applied to the inner surfaces of the lenslets. The charge drain coating drains electrons that come into contact with the charge drain coating so that the performance of the digital pattern generator will not be hindered by electron charge build-up. The charge drain coating includes a doping material that coalesces into clusters that are embedded within a high dielectric insulating material.

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