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1. 发明授权

US06670612B1 Undercut measurement using SEM 有权
标题翻译：使用SEM进行底切测量
公开(公告)号：US06670612B1
公开(公告)日：2003-12-30
申请号：US10186797
申请日：2002-07-01
申请人： Gian Francesco Lorusso , Luca Grella
发明人： Gian Francesco Lorusso , Luca Grella
IPC分类号： G01N23225
CPC分类号： G01N23/2251 , H01J37/28 , H01J2237/2611 , H01J2237/2815
摘要： The disclosure relates to measuring an undercut of a feature on a specimen using a scanning electron microscope (SEM). In accordance with one embodiment, a method for measuring the undercut includes illuminating the feature with a primary electron beam at an incident angle, changing the incident angle of the primary electron beam over a set of angles, measuring an intensity of scattered electrons from the feature for each incident angle in the set of angles, and determining a discontinuity in the intensities as a function of the incident angle.
摘要翻译：本公开涉及使用扫描电子显微镜（SEM）测量样品上的特征的底切。根据一个实施例，用于测量底切的方法包括以入射角以一次电子束照射该特征，改变一组电子束在一组角度上的入射角，测量来自特征的散射电子的强度对于角度集合中的每个入射角，并且确定作为入射角的函数的强度的不连续性。

2. 发明申请

US20120099092A1 DETECTION OF CONTAMINATION IN EUV SYSTEMS 有权
标题翻译：检测EUV系统中的污染
公开(公告)号：US20120099092A1
公开(公告)日：2012-04-26
申请号：US13282175
申请日：2011-10-26
申请人： Rik Jonckheere , Anne-Marie Goethals , Gian Francesco Lorusso , Ivan Pollentier
发明人： Rik Jonckheere , Anne-Marie Goethals , Gian Francesco Lorusso , Ivan Pollentier
IPC分类号： G01N21/55 , B23P17/04 , G03B27/54
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual minors of the optics of the system.
摘要翻译：公开了一种用于感测应用系统中的污染的传感器。在一个方面，传感器包括盖层。当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统的光学器件的实际未成年体上形成相等污染物时的平均反射率变化。

3. 发明申请

US20120075604A1 Methods and Systems for Evaluating Extreme Ultraviolet Mask Flatness 有权
标题翻译：评估极紫外线平坦度的方法和系统
公开(公告)号：US20120075604A1
公开(公告)日：2012-03-29
申请号：US13239052
申请日：2011-09-21
申请人： Gian Francesco Lorusso , Sang Lee
发明人： Gian Francesco Lorusso , Sang Lee
IPC分类号： G03B27/54
CPC分类号： G03F7/7085 , G03F1/24 , G03F1/84 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
摘要翻译：公开了用于确定光刻光学元件和/或平版印刷光学元件的保持器的形貌的方法和系统。在一个实施例中，该方法包括将电磁辐射引向平版印刷光学元件，其中电磁辐射包括在第一预定波长范围内的电磁辐射和在第二预定波长范围内的电磁辐射。该方法还包括使用平版印刷光学元件吸附第一预定波长范围内的电磁辐射，并将第二预定波长范围内的电磁辐射的至少一部分反射到包含光敏层的基片上，从而使感光层以形成曝光的感光层。该方法还包括执行曝光的感光层的评估，并且基于评估，确定平版印刷光学元件的形貌。

4. 发明申请

US20090103069A1 DETECTION OF CONTAMINATION IN EUV SYSTEMS 审中-公开
标题翻译：检测EUV系统中的污染
公开(公告)号：US20090103069A1
公开(公告)日：2009-04-23
申请号：US12236446
申请日：2008-09-23
申请人： Rik Jonckheere , Anne-Marie Goethals , Gian Francesco Lorusso , Ivan Pollentier
发明人： Rik Jonckheere , Anne-Marie Goethals , Gian Francesco Lorusso , Ivan Pollentier
IPC分类号： G03B27/54 , A61N5/00
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.
摘要翻译：公开了一种用于感测应用系统中的污染的传感器。在一个方面，传感器包括盖层。当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统光学器件的实际反射镜上形成相等污染物时的平均反射率变化。

5. 发明授权

US07405402B1 Method and apparatus for aberration-insensitive electron beam imaging 有权
标题翻译：用于像差不敏感电子束成像的方法和装置
公开(公告)号：US07405402B1
公开(公告)日：2008-07-29
申请号：US11360930
申请日：2006-02-22
申请人： Srinivas Vedula , Amir Azordegan , Laurence Hordon , Alan D. Brodie , Gian Francesco Lorusso , Takuji Tada
发明人： Srinivas Vedula , Amir Azordegan , Laurence Hordon , Alan D. Brodie , Gian Francesco Lorusso , Takuji Tada
IPC分类号： G01N23/00 , G21K7/00 , H01J3/14
CPC分类号： G01N23/04 , H01J37/21 , H01J37/28 , H01J2237/0492 , H01J2237/153 , H01J2237/2817
摘要： One embodiment relates to an electron beam apparatus for automated imaging of a substrate surface. An electron source is configured to emit electrons, and a gun lens is configured to focus the electrons emitted by the electron source so as to form an electron beam. A condenser lens system is configured to receive the electron beam and to reduce its numerical aperture to an ultra-low numerical aperture. An objective lens is configured to focus the ultra-low numerical aperture beam onto the substrate surface. Other embodiments are also disclosed.
摘要翻译：一个实施例涉及用于衬底表面的自动成像的电子束装置。电子源被配置为发射电子，并且枪形透镜被配置为聚焦由电子源发射的电子以形成电子束。聚光透镜系统被配置为接收电子束并且将其数值孔径减小到超低数值孔径。物镜被配置为将超低数值孔径光束聚焦到衬底表面上。还公开了其他实施例。

6. 发明授权

US07276690B1 Method and system for e-beam scanning 有权
标题翻译：电子束扫描的方法和系统
公开(公告)号：US07276690B1
公开(公告)日：2007-10-02
申请号：US10911216
申请日：2004-08-04
申请人： Gian Francesco Lorusso , Luca Grella , Douglas K. Masnaghetti , Amir Azordegan
发明人： Gian Francesco Lorusso , Luca Grella , Douglas K. Masnaghetti , Amir Azordegan
IPC分类号： G01N23/00
CPC分类号： G01N23/2251 , H01J2237/004 , H01J2237/28
摘要： The disclosure relates to a method and system of electron beam scanning for measurement, inspection or review. In accordance with one embodiment, the method includes a first scan on a region to collect first image data. The first image data is processed to determine information about a feature in the region. A scanning method is selected for imaging the feature. A second scan using the selected scanning method on the feature is then applied to collect second image data.
摘要翻译：本公开涉及用于测量，检查或审查的电子束扫描的方法和系统。根据一个实施例，该方法包括在收集第一图像数据的区域上的第一扫描。处理第一图像数据以确定关于该区域中的特征的信息。选择扫描方法来成像该特征。然后应用使用所选择的扫描方法对特征进行的第二次扫描来收集第二图像数据。

7. 发明授权

US07098456B1 Method and apparatus for accurate e-beam metrology 有权
标题翻译：用于精确电子束计量的方法和装置
公开(公告)号：US07098456B1
公开(公告)日：2006-08-29
申请号：US10918088
申请日：2004-08-13
申请人： Gian Francesco Lorusso , Paola De Cecco , Luca Grella , David L. Adler , David Goodstein , Chris Bevis
发明人： Gian Francesco Lorusso , Paola De Cecco , Luca Grella , David L. Adler , David Goodstein , Chris Bevis
IPC分类号： H01J37/28 , G01N23/225
CPC分类号： G01N23/2251 , H01J37/265 , H01J37/28 , H01J2237/2817 , H01J2237/2826
摘要： One embodiment disclosed relates to a method for accurate electron beam metrology. A substrate with a target feature is loaded into a scanning electron microscope. An electron beam is scanned over the target feature, and scattered electrons are detected therefrom. A characteristic of the target feature is measured by finding optimal values for parameters of a mathematical model which accounts for substrate charging effects. Principal component analysis may be used to advantageously result in reduced requirements for processing time and/or computational speed.
摘要翻译：所公开的一个实施例涉及一种精确电子束计量的方法。将具有目标特征的基板装载到扫描电子显微镜中。在目标特征上扫描电子束，并从中检测散射的电子。通过找到考虑到基板充电效应的数学模型的参数的最佳值来测量目标特征的特征。主成分分析可用于有利地减少对处理时间和/或计算速度的要求。

8. 发明授权

US07041976B1 Automated focusing of electron image 失效
标题翻译：电子图像自动聚焦
公开(公告)号：US07041976B1
公开(公告)日：2006-05-09
申请号：US10700144
申请日：2003-11-03
申请人： Mark A. Neil , Gian Francesco Lorusso , Gabor D. Toth , Varoujan Chakarian , Douglas K. Masnaghetti
发明人： Mark A. Neil , Gian Francesco Lorusso , Gabor D. Toth , Varoujan Chakarian , Douglas K. Masnaghetti
IPC分类号： G01R31/305
CPC分类号： H01J37/21 , G01R31/307 , H01J37/05 , H01J37/244 , H01J37/28 , H01J2237/216 , H01J2237/24485 , H01J2237/2487 , H01J2237/2817
摘要： One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.
摘要翻译：所公开的一个实施例涉及一种用于电子图像的自动聚焦的方法。确定EF截止电压。为了补偿EF截止电压的变化，调整聚焦条件。调整聚焦条件可以包括例如根据截止电压的变化来调整晶片偏置电压。所公开的另一实施例涉及一种用于扫描电子成像设备中的电子图像的自动聚焦的方法。改变第一图像平面中的一次电子束的聚焦条件，从而使通过第二图像平面中的孔的二次电子束的强度最大化。

9. 发明授权

US06930308B1 SEM profile and surface reconstruction using multiple data sets 有权
标题翻译：使用多个数据集的SEM轮廓和表面重构
公开(公告)号：US06930308B1
公开(公告)日：2005-08-16
申请号：US10265520
申请日：2002-10-03
申请人： Gian Francesco Lorusso , Robert Anthony Watts , Alexander Jozef Gubbens , Laurence Stuart Hordon
发明人： Gian Francesco Lorusso , Robert Anthony Watts , Alexander Jozef Gubbens , Laurence Stuart Hordon
IPC分类号： G01Q20/00 , G01Q30/02 , G01N23/00 , G01N23/225 , G01Q30/04
CPC分类号： G01N23/2251 , H01J2237/226 , H01J2237/2611 , H01J2237/28
摘要： A highly accurate technique for inspecting semiconductor devices is described. The technique involves utilizing multiple sets of measurement data obtained by a scanning electron microscope (SEM) to determine the dimensional parameters of a semiconductor device. The SEM collects each set of data from a different angular orientation with respect to the device. The dimensional parameters of the semiconductor device are determined by analyzing the relationship between the SEM inspection angle and the collected data sets. Various configurations of an SEM can be used to implement this invention. For instance an electron beam inspection system of the present invention can have at least two sets of deflectors for guiding the electron beam, a swiveling specimen stage, and/or a set of detectors set about the specimen at different angular orientations.
摘要翻译：描述了用于检查半导体器件的高精度技术。该技术涉及利用扫描电子显微镜（SEM）获得的多组测量数据来确定半导体器件的尺寸参数。 SEM从相对于设备的不同角度取向收集每组数据。通过分析SEM检查角度与收集的数据集之间的关系来确定半导体器件的尺寸参数。可以使用SEM的各种构造来实现本发明。例如，本发明的电子束检查系统可以具有用于引导电子束的至少两组偏转器，旋转样品台和/或在不同角度方向上围绕样本设置的一组检测器。

10. 发明授权

US09104122B2 Methods and systems for evaluating extreme ultraviolet mask flatness 有权
标题翻译：评估极紫外线平板度的方法和系统
公开(公告)号：US09104122B2
公开(公告)日：2015-08-11
申请号：US13239052
申请日：2011-09-21
申请人： Gian Francesco Lorusso , Sang Lee
发明人： Gian Francesco Lorusso , Sang Lee
IPC分类号： G03B27/68 , G03B27/54 , G03B27/62 , G03B27/32 , G03F7/20 , G03F1/24 , G03F1/84 , G03B27/52 , G03B27/42
CPC分类号： G03F7/7085 , G03F1/24 , G03F1/84 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
摘要翻译：公开了用于确定光刻光学元件和/或平版印刷光学元件的保持器的形貌的方法和系统。在一个实施例中，该方法包括将电磁辐射引向平版印刷光学元件，其中电磁辐射包括在第一预定波长范围内的电磁辐射和在第二预定波长范围内的电磁辐射。该方法还包括使用平版印刷光学元件吸附第一预定波长范围内的电磁辐射，并将第二预定波长范围内的电磁辐射的至少一部分反射到包含光敏层的基片上，从而使感光层以形成曝光的感光层。该方法还包括执行曝光的感光层的评估，并且基于评估，确定平版印刷光学元件的形貌。

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