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    • 3. 发明授权
    • Electron beam lithography with linear column array and rotary stage
    • 具有线性柱阵列和旋转台的电子束光刻
    • US09040942B1
    • 2015-05-26
    • US12008517
    • 2008-01-11
    • Keith StandifordAlan D. Brodie
    • Keith StandifordAlan D. Brodie
    • G21K5/04H01J37/04
    • H01J37/04H01J37/3007H01J37/3177H01J2237/201H01J2237/31789
    • One embodiment relates to an apparatus for electron beam lithography which includes a linear array of reflection electron beam lithography columns and a rotary stage. Each column is separately controllable to write a portion of a lithographic pattern onto a substrate. The rotary stage is configured to hold multiple substrates and to be rotated under the linear array of reflection electron beam lithography columns. Another embodiment relates to a method of electron beam lithography which includes simultaneously rotating and linearly translating a stage holding a plurality of wafers, and writing a lithography pattern using a linear array of reflection electron beam lithography columns over the stage. Each said column traverses a spiral path over the stage as the stage is rotated and linearly translated. Other embodiments, aspects and feature are also disclosed.
    • 一个实施例涉及一种用于电子束光刻的装置,其包括反射电子束光刻柱和旋转台的线性阵列。 每列可分开控制,以将一部分平版印刷图案写入基板上。 旋转台被配置为保持多个基板并且在反射电子束光刻柱的线性阵列下旋转。 另一实施例涉及电子束光刻的方法,其包括同时旋转和线性平移保持多个晶片的台,以及使用反射电子束光刻柱的线性阵列在平台上书写光刻图案。 当舞台旋转并线性平移时,每个所述列横过舞台上的螺旋路径。 还公开了其它实施例,方面和特征。
    • 4. 发明授权
    • Method and apparatus for beam current fluctuation correction
    • 射束电流波动校正的方法和装置
    • US07091486B1
    • 2006-08-15
    • US10938841
    • 2004-09-09
    • Mark A. McCordAlan D. Brodie
    • Mark A. McCordAlan D. Brodie
    • G01N23/00G21K7/00
    • G01N23/04B82Y10/00B82Y40/00H01J37/09H01J37/24H01J37/244H01J37/28H01J37/3174
    • One embodiment disclosed relates to an electron beam imaging apparatus. An electron source is configured to generate an electron beam, and a beam-limiting aperture is configured to block a portion of the electron beam and to allow transmission of another portion of the electron beam through the aperture. A first detector is configured to detect scattered electrons emitted by the aperture due to the blocked portion of the electron beam. The imaging apparatus may also include a second detector configured to detect scattered electrons emitted by the sample due to impingement of the transmitted portion of the electron beam. A gain control device may also be included to adjust a gain of a detected signal derived from the second detector using a control signal derived from the first detector. Another embodiment disclosed relates to an electron beam lithography apparatus. The lithography apparatus may adjust a pixel dwell time based on a control signal derived from the scattered electrons emitted by the aperture.
    • 公开的一个实施例涉及一种电子束成像装置。 电子源被配置为产生电子束,并且束限制孔被配置为阻挡电子束的一部分并且允许电子束的另一部分通过孔传播。 第一检测器被配置为检测由于电子束的阻挡部分而由孔发射的散射电子。 成像装置还可以包括第二检测器,其被配置为检测由于电子束的透射部分的撞击而由样品发射的散射电子。 还可以包括增益控制装置,以使用从第一检测器导出的控制信号来调整从第二检测器导出的检测信号的增益。 所公开的另一实施例涉及电子束光刻设备。 光刻设备可以基于从孔径发射的散射电子得到的控制信号来调整像素驻留时间。
    • 5. 发明授权
    • Electron optics for multi-beam electron beam lithography tool
    • 多光束电子束光刻工具的电子光学
    • US06617587B2
    • 2003-09-09
    • US10243585
    • 2002-09-12
    • N. William ParkerAlan D. BrodieGeorge Xinsheng GuoEdward M. YinMichael C. Matter
    • N. William ParkerAlan D. BrodieGeorge Xinsheng GuoEdward M. YinMichael C. Matter
    • H01J37147
    • B82Y10/00B82Y40/00H01J37/3174H01J37/3177
    • A charge particle optical column capable of being used in a high throughput, mutli-column, multi-beam electron beam lithography system is disclosed herein. The column has the following properties: purely electrostatic components; small column footprint (20 mm square); multiple, individually focused charge particle beams; telecentric scanning of all beams simultaneously on a wafer for increased depth of field; and conjugate blanking of the charged particle beams for reduced beam blur. An electron gun is disclosed that uses microfabricated field emission sources and a microfabricated aperture-deflector assembly. The aperture-deflector assembly acts as a perfect lens in focusing, steering and blanking a multipicity of electron beams through the back focal plane of an immersion lens located at the bottom of the column. Beam blanking can be performed using a gating signal to decrease beam blur during writing on the wafer.
    • 本文公开了一种能够在高通量,多列,多光束电子束光刻系统中使用的电荷粒子光学列。 该柱具有以下特性:纯静电成分; 小柱占地面积(20平方米); 多个单独聚焦的电荷粒子束; 同时在晶圆上同时扫描所有光束以增加景深; 并且用于减少光束模糊的带电粒子束的共轭消隐。 公开了一种电子枪,其使用微制造的场致发射源和微制造的孔径偏转器组件。 孔径偏转器组件用作聚焦,转向和消隐通过位于塔底部的浸没透镜的后焦平面的多个电子束的完美透镜。 可以使用门控信号进行光束消隐,以减少在晶片上写入期间的光束模糊。
    • 9. 发明授权
    • Well-based dynamic pattern generator
    • 基于良好的动态模式生成器
    • US08253119B1
    • 2012-08-28
    • US12510049
    • 2009-07-27
    • Alan D. BrodiePaul PetricMark A. McCord
    • Alan D. BrodiePaul PetricMark A. McCord
    • G01N23/00G21K1/02G21K1/08
    • H01J37/3175B82Y10/00B82Y40/00H01J37/3177H01J2237/31789
    • One embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. The apparatus includes a plurality of base electrodes in a two-dimensional array, an insulating border surrounding each base electrode so as to electrically isolate the base electrodes from each other; and a sidewall surrounding each base electrode. The sidewall comprises a plurality of stacked electrodes which are separated by insulating layers. In addition, the base electrodes are advantageously shaped so as to be concave. Furthermore, a conformal coating may be advantageously applied over the base electrodes and sidewalls. Another embodiment relates to an apparatus for reflection electron beam lithography. The apparatus includes a shadow mask configured to form an array of incident electron beamlets. The shadow mask comprises an array of holes which correspond one-to-one with an array of pixel pads of an electron reflective patterned structure. Other embodiments, aspects and features are disclosed.
    • 一个实施例涉及用于反射电子束光刻的动态图案发生器的装置。 该装置包括二维阵列中的多个基极电极,围绕每个基极的绝缘边界,以将基极电极彼此电隔离; 以及围绕每个基极的侧壁。 侧壁包括由绝缘层分离的多个堆叠电极。 此外,基底电极有利地成形为凹形。 此外,可以有利地在基极和侧壁上施加保形涂层。 另一实施例涉及一种用于反射电子束光刻的装置。 该装置包括配置成形成入射电子束阵列的荫罩。 荫罩包括与电子反射图案化结构的像素焊盘的阵列一一对应的孔阵列。 公开了其它实施例,方面和特征。
    • 10. 发明授权
    • Inspecting optical masks with electron beam microscopy
    • 用电子束显微镜检查光学掩模
    • US5717204A
    • 1998-02-10
    • US606854
    • 1996-02-26
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. Jau
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. Jau
    • H01J37/28H01J37/30H01J37/26
    • H01J37/28H01J37/3005H01J2237/2817
    • An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
    • 一种装置通过光学相移掩模扫描电子束,并自动检查掩模以确定相移掩模的特征和缺陷的分类。 电子束指向掩模的表面以扫描该掩模,并且提供检测器以从掩模的表面测量次级和背散射带电粒子。 掩模安装在x-y平台上,以在掩模被电子束扫描时提供至少一个自由度。 通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征,可以检测掩模的各种物理特征以及它们的尺寸和位置。 也可以确定铬层的厚度。 在检查配置中,还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。