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1. 发明申请

US20070287244A1 ALTERNATIVE INTEGRATION SCHEME FOR CMOS S/D SiGe PROCESS 审中-公开
标题翻译： CMOS S / D SiGe工艺的替代整合方案
公开(公告)号：US20070287244A1
公开(公告)日：2007-12-13
申请号：US11739099
申请日：2007-04-24
申请人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
发明人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
IPC分类号： H01L21/8236
CPC分类号： H01L21/823814 , H01L21/823864
摘要： A method for fabricating a semiconductor device with adjacent PMOS and NMOS devices on a substrate includes forming a PMOS gate electrode with a PMOS hardmask on a semiconductor substrate with a PMOS gate dielectric layer in between, forming an NMOS gate electrode with an NMOS hardmask on a semiconductor substrate with an NMOS gate dielectric layer in between, forming an oxide liner over a portion of the PMOS gate electrode and over a portion of the NMOS gate electrode, forming a lightly doped N-Halo implant, depositing a nitride layer over the oxide liner, depositing photoresist on the semiconductor substrate in a pattern that covers the NMOS device, etching the nitride layer from the PMOS device, wherein the etching nitride layer leaves a portion of the nitride layer on the oxide liner, etching semiconductor substrate to form a Si recess, and depositing SiGe into the Si recesses, wherein the SiGe and the nitride layer enclose the oxide liner. The method can also include implanting in the semiconductor substrate a source and drain region for the PMOS.
摘要翻译：一种用于在衬底上制造具有相邻PMOS和NMOS器件的半导体器件的方法包括在半导体衬底上形成具有PMOS硬掩模的PMOS栅电极，其间具有PMOS栅极介电层，在NMOS栅极上形成NMOS栅极半导体衬底，其间具有NMOS栅极介电层，在PMOS栅电极的一部分上方和NMOS栅电极的一部分之上形成氧化物衬垫，形成轻掺杂的N-Halo注入，在氧化物衬垫上沉积氮化物层以覆盖所述NMOS器件的图案沉积在所述半导体衬底上的光致抗蚀剂，从所述PMOS器件蚀刻所述氮化物层，其中所述蚀刻氮化物层离开所述氧化物衬底上的所述氮化物层的一部分，蚀刻半导体衬底以形成Si凹槽并且将SiGe沉积到Si凹部中，其中SiGe和氮化物层包围氧化物衬垫。该方法还可以包括在半导体衬底中注入用于PMOS的源极和漏极区域。

2. 发明授权

US07972933B2 Method of selective nitridation 有权
标题翻译：选择性氮化方法
公开(公告)号：US07972933B2
公开(公告)日：2011-07-05
申请号：US12748523
申请日：2010-03-29
申请人： Christopher S. Olsen , Johanes Swenberg , Udayan Ganguly , Theresa Kramer Guarini , Yonah Cho
发明人： Christopher S. Olsen , Johanes Swenberg , Udayan Ganguly , Theresa Kramer Guarini , Yonah Cho
IPC分类号： H01L21/76
CPC分类号： H01L21/3144 , H01L21/02247 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/3211 , H01L27/11521 , Y10S438/911
摘要： Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
摘要翻译：本文提供了形成半导体器件的方法。在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

3. 发明申请

US20100330814A1 METHODS OF FORMING OXIDE LAYERS ON SUBSTRATES 有权
标题翻译：在基材上形成氧化层的方法
公开(公告)号：US20100330814A1
公开(公告)日：2010-12-30
申请号：US12820395
申请日：2010-06-22
申请人： Yoshitaka Yokota , Christopher S. Olsen , Agus Sofian Tjandra , Yonah Cho , Matthew S. Rogers
发明人： Yoshitaka Yokota , Christopher S. Olsen , Agus Sofian Tjandra , Yonah Cho , Matthew S. Rogers
IPC分类号： H01L21/314
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将所述氧化物层暴露于由包含含氧气体的工艺气体形成的等离子体，以修复所述一个或多个缺陷。在一些实施例中，氧化物层可以形成在衬底上。在一些实施例中，形成氧化物层还包括在衬底顶部沉积氧化物层。在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。在一些实施例中，在表面的热氧化期间，处理温度保持在约700摄氏度或更低。

4. 发明申请

US20100317186A1 ENHANCING NAND FLASH FLOATING GATE PERFORMANCE 有权
标题翻译：增强NAND FLASH浮动门性能
公开(公告)号：US20100317186A1
公开(公告)日：2010-12-16
申请号：US12815659
申请日：2010-06-15
申请人： Johanes Swenberg , David Chu , Theresa Kramer Guarini , Yonah Cho , Udayan Ganguly , Lucien Date
发明人： Johanes Swenberg , David Chu , Theresa Kramer Guarini , Yonah Cho , Udayan Ganguly , Lucien Date
IPC分类号： H01L21/28 , H01L21/31
CPC分类号： H01L21/28273 , H01L29/66825 , H01L29/7881 , Y10S438/911
摘要： Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.
摘要翻译：本文描述的实施例通常涉及用于制造闪存设备的闪存设备和方法。在一个实施例中，提供了用于从衬底的氮化区域中选择性地除去氮的方法。该方法包括将包括邻近含氧化物层的材料层的衬底定位在处理室中，将衬底暴露于氮化工艺以将氮掺入材料层和含氧化物层的暴露区域上，并将氮化材料层和含氧化物层的氮化区域包含一定量的含氢气体和一定量的含氧气体的气体混合物，以相对于氮化材料层从含氧化物层的氮化区域选择性地除去氮气使用自由基氧化工艺。

5. 发明申请

US20100248435A1 METHOD OF SELECTIVE NITRIDATION 有权
标题翻译：选择性硝化方法
公开(公告)号：US20100248435A1
公开(公告)日：2010-09-30
申请号：US12748523
申请日：2010-03-29
申请人： CHRISTOPHER S. OLSEN , JOHANES SWENBERG , UDAYAN GANGULY , THERESA KRAMER GUARINI , YONAH CHO
发明人： CHRISTOPHER S. OLSEN , JOHANES SWENBERG , UDAYAN GANGULY , THERESA KRAMER GUARINI , YONAH CHO
IPC分类号： H01L21/336
CPC分类号： H01L21/3144 , H01L21/02247 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/3211 , H01L27/11521 , Y10S438/911
摘要： Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
摘要翻译：本文提供了形成半导体器件的方法。在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

6. 发明授权

US07760980B2 Ridge technique for fabricating an optical detector and an optical waveguide 失效
标题翻译：用于制造光学检测器和光波导的脊技术
公开(公告)号：US07760980B2
公开(公告)日：2010-07-20
申请号：US11514291
申请日：2006-08-31
申请人： Lawrence C. West , Gregory L. Wojcik , Francisco A. Leon , Yonah Cho , Andreas Goebel
发明人： Lawrence C. West , Gregory L. Wojcik , Francisco A. Leon , Yonah Cho , Andreas Goebel
IPC分类号： G02B6/10 , G02B6/13
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/1347 , G02B6/136 , G02B2006/12097 , G02B2006/121 , G02B2006/12123 , G02B2006/12176 , H01L31/02327 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.
摘要翻译：一种在光波导中在基板上制造光检测器的方法，所述方法包括：在所述基板的表面上形成至少一层，所述至少一层包括SiGe; 在第一区域上将杂质注入到所述至少一个层中以形成用于所述光学检测器的检测器区域; 在第一区域和第二区域中蚀刻到所述至少一个层中以在所述第一和第二区域之间形成脊，所述脊限定所述光学检测器和所述光波导; 用具有比SiGe低的折射率的电介质材料填充第一和第二区域; 并且在用电介质材料填充第一和第二区域之后，去除表面材料以形成平坦化的上表面。

7. 发明申请

US20070256627A1 METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON 有权
标题翻译：使用与碳合金制成的超薄结块形成方法
公开(公告)号：US20070256627A1
公开(公告)日：2007-11-08
申请号：US11742932
申请日：2007-05-01
申请人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
发明人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
IPC分类号： C30B23/00 , C23C16/00 , B05D3/02 , C30B25/00
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

8. 发明授权

US08492292B2 Methods of forming oxide layers on substrates 有权
标题翻译：在基底上形成氧化物层的方法
公开(公告)号：US08492292B2
公开(公告)日：2013-07-23
申请号：US12820395
申请日：2010-06-22
申请人： Yoshitaka Yokota , Christopher S. Olsen , Agus Sofian Tjandra , Yonah Cho , Matthew S. Rogers
发明人： Yoshitaka Yokota , Christopher S. Olsen , Agus Sofian Tjandra , Yonah Cho , Matthew S. Rogers
IPC分类号： H01L21/314
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将所述氧化物层暴露于由包含含氧气体的工艺气体形成的等离子体，以修复所述一个或多个缺陷。在一些实施例中，氧化物层可以形成在衬底上。在一些实施例中，形成氧化物层还包括在衬底顶部沉积氧化物层。在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。在一些实施例中，在表面的热氧化期间，处理温度保持在约700摄氏度或更低。

9. 发明申请

US20080132039A1 FORMATION AND TREATMENT OF EPITAXIAL LAYER CONTAINING SILICON AND CARBON 审中-公开
标题翻译：含有硅和碳的外延层的形成和处理
公开(公告)号：US20080132039A1
公开(公告)日：2008-06-05
申请号：US11566058
申请日：2006-12-01
申请人： YONAH CHO , Yihwan Kim
发明人： YONAH CHO , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/66628 , H01L21/02381 , H01L21/02529 , H01L21/02573 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/268 , H01L29/7834
摘要： Methods for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment converts interstitial carbon to substitutional carbon in the epitaxial layer, according to one or more embodiments. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, spike annealing and combinations thereof. Embodiments include amorphization of the epitaxial layer containing silicon and carbon.
摘要翻译：公开了用于形成和处理含有硅和碳的外延层的方法。根据一个或多个实施方案，处理将间隙碳转化成外延层中的替代碳。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的处理包括退火短时间，例如通过激光退火，毫秒退火，快速热退火，尖峰退火及其组合。实施例包括含有硅和碳的外延层的非晶化。

10. 发明申请

US20080131619A1 FORMATION AND TREATMENT OF EPITAXIAL LAYER CONTAINING SILICON AND CARBON 有权
标题翻译：含有硅和碳的外延层的形成和处理
公开(公告)号：US20080131619A1
公开(公告)日：2008-06-05
申请号：US11778212
申请日：2007-07-16
申请人： YONAH CHO , Yihwan Kim
发明人： YONAH CHO , Yihwan Kim
IPC分类号： C23C14/12
CPC分类号： H01L21/046 , H01L21/268 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/7834 , H01L29/7848
摘要： Methods for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment converts interstitial carbon to substitutional carbon in the epitaxial layer, according to one or more embodiments. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, spike annealing and combinations thereof. Embodiments include amorphization of at least a portion of the epitaxial layer containing silicon and carbon.
摘要翻译：公开了用于形成和处理含有硅和碳的外延层的方法。根据一个或多个实施方案，处理将间隙碳转化成外延层中的替代碳。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的处理包括退火短时间，例如通过激光退火，毫秒退火，快速热退火，尖峰退火及其组合。实施例包括至少部分含有硅和碳的外延层的非晶化。

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