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1. 发明授权

US07972933B2 Method of selective nitridation 有权
标题翻译：选择性氮化方法
公开(公告)号：US07972933B2
公开(公告)日：2011-07-05
申请号：US12748523
申请日：2010-03-29
申请人： Christopher S. Olsen , Johanes Swenberg , Udayan Ganguly , Theresa Kramer Guarini , Yonah Cho
发明人： Christopher S. Olsen , Johanes Swenberg , Udayan Ganguly , Theresa Kramer Guarini , Yonah Cho
IPC分类号： H01L21/76
CPC分类号： H01L21/3144 , H01L21/02247 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/3211 , H01L27/11521 , Y10S438/911
摘要： Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
摘要翻译：本文提供了形成半导体器件的方法。在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

2. 发明申请

US20100317186A1 ENHANCING NAND FLASH FLOATING GATE PERFORMANCE 有权
标题翻译：增强NAND FLASH浮动门性能
公开(公告)号：US20100317186A1
公开(公告)日：2010-12-16
申请号：US12815659
申请日：2010-06-15
申请人： Johanes Swenberg , David Chu , Theresa Kramer Guarini , Yonah Cho , Udayan Ganguly , Lucien Date
发明人： Johanes Swenberg , David Chu , Theresa Kramer Guarini , Yonah Cho , Udayan Ganguly , Lucien Date
IPC分类号： H01L21/28 , H01L21/31
CPC分类号： H01L21/28273 , H01L29/66825 , H01L29/7881 , Y10S438/911
摘要： Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.
摘要翻译：本文描述的实施例通常涉及用于制造闪存设备的闪存设备和方法。在一个实施例中，提供了用于从衬底的氮化区域中选择性地除去氮的方法。该方法包括将包括邻近含氧化物层的材料层的衬底定位在处理室中，将衬底暴露于氮化工艺以将氮掺入材料层和含氧化物层的暴露区域上，并将氮化材料层和含氧化物层的氮化区域包含一定量的含氢气体和一定量的含氧气体的气体混合物，以相对于氮化材料层从含氧化物层的氮化区域选择性地除去氮气使用自由基氧化工艺。

3. 发明授权

US08163626B2 Enhancing NAND flash floating gate performance 有权
标题翻译：增强NAND闪存浮栅性能
公开(公告)号：US08163626B2
公开(公告)日：2012-04-24
申请号：US12815659
申请日：2010-06-15
申请人： Johanes Swenburg , David Chu , Theresa Kramer Guarini , Yonah Cho , Udayan Ganguly , Lucien Date
发明人： Johanes Swenburg , David Chu , Theresa Kramer Guarini , Yonah Cho , Udayan Ganguly , Lucien Date
IPC分类号： H01L21/76
CPC分类号： H01L21/28273 , H01L29/66825 , H01L29/7881 , Y10S438/911
摘要： Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.
摘要翻译：本文描述的实施例通常涉及用于制造闪存设备的闪存设备和方法。在一个实施例中，提供了用于从衬底的氮化区域中选择性地除去氮的方法。该方法包括将包括邻近含氧化物层的材料层的衬底定位在处理室中，将衬底暴露于氮化工艺以将氮掺入材料层和含氧化物层的暴露区域上，并将氮化材料层和含氧化物层的氮化区域包含一定量的含氢气体和一定量的含氧气体的气体混合物，以相对于氮化材料层从含氧化物层的氮化区域选择性地除去氮气使用自由基氧化工艺。

4. 发明授权

US08748259B2 Method and apparatus for single step selective nitridation 有权
标题翻译：单步选择性氮化的方法和装置
公开(公告)号：US08748259B2
公开(公告)日：2014-06-10
申请号：US13033330
申请日：2011-02-23
申请人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
发明人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
IPC分类号： H01L21/00
CPC分类号： H01L21/02247 , H01L21/02362 , H01L21/28202 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
摘要翻译：提供了半导体衬底选择性一步氮化的方法和装置。通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成区域和基板支撑。

5. 发明申请

US20110217834A1 METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION 有权
标题翻译：用于单步选择性硝化的方法和装置
公开(公告)号：US20110217834A1
公开(公告)日：2011-09-08
申请号：US13033330
申请日：2011-02-23
申请人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
发明人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
IPC分类号： H01L21/28 , H01L21/31
CPC分类号： H01L21/02247 , H01L21/02362 , H01L21/28202 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
摘要翻译：提供了半导体衬底选择性一步氮化的方法和装置。通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成区域和基板支撑。

6. 发明申请

US20080003702A1 Low Power RF Tuning Using Optical and Non-Reflected Power Methods 审中-公开
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US20080003702A1
公开(公告)日：2008-01-03
申请号：US11427318
申请日：2006-06-28
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. For example, an optical instrument adapted to measure properties of light over a specific portion of the electromagnetic spectrum may be used to detect one or more wavelength intensities from the plasma. Then, an electronic device, for example a computer software may analyze the wavelength intensities and a match circuit may then be adjusted. In this way, consistent plasma may be obtained. In other embodiments, the present invention may utilize the relationship between chamber pressure, substrate temperature, coil currents and/or the plasma in order to adjust and maintain a repeatable plasma process.
摘要翻译：本发明的方面包括可以用于通过使用等离子体数据监视组件来监测和调整衬底处理系统中的等离子体的方法和装置。例如，可以使用适于测量特定部分电磁光谱的光的光学仪器来检测来自等离子体的一个或多个波长强度。然后，诸如计算机软件的电子设备可以分析波长强度，然后可以调整匹配电路。以这种方式，可以获得一致的等离子体。在其他实施例中，本发明可以利用腔室压力，衬底温度，线圈电流和/或等离子体之间的关系，以便调整和维持可重复的等离子体工艺。

7. 发明授权

US08144329B2 Low power RF tuning using optical and non-reflected power methods 有权
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US08144329B2
公开(公告)日：2012-03-27
申请号：US13177442
申请日：2011-07-06
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： G01N21/55
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.
摘要翻译：本发明的方面包括在基板处理系统中控制等离子体的方法。一个实施例提供了在处理第一组一个或多个基板之前控制在腔室内从等离子体反射的反射电磁辐射的第一组波长强度，将第一组反射电磁辐射的波长强度与处理中的RF功率相关联系统，基于反射电磁辐射的第一组波长强度调整匹配电路，处理衬底处理系统中的第一组一个或多个衬底，控制从等离子体反射的反射电磁辐射的第二组波长强度并且将反射的电磁辐射的第二组波长强度与处理系统内的RF功率相关联。

8. 发明申请

US20110011743A1 LOW POWER RF TUNING USING OPTICAL AND NON-REFLECTED POWER METHODS 审中-公开
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US20110011743A1
公开(公告)日：2011-01-20
申请号：US12889286
申请日：2010-09-23
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： C25D21/12
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. In one embodiment, an apparatus for monitoring a plasma in a substrate processing system is provided. The apparatus includes a plasma chamber having a plurality of walls, at least one of the plurality of walls having a dielectric ceiling, at least one inner coil element and at least one outer coil element disposed outside the chamber, a current sensor coupled to one of the inner coil element or the outer coil element, the current sensor adapted to detect current from an inductively coupled plasma generated in the plasma chamber, an RF power source, and one or more adjustable capacitors coupled to each of the one or more coil elements.
摘要翻译：本发明的方面包括可以用于通过使用等离子体数据监视组件来监测和调整衬底处理系统中的等离子体的方法和装置。在一个实施例中，提供了一种用于监测衬底处理系统中的等离子体的装置。该装置包括具有多个壁的等离子体室，多个壁中的至少一个壁具有电介质天花板，至少一个内部线圈元件和设置在室外部的至少一个外部线圈元件，耦合到内部线圈元件或外部线圈元件，电流传感器适于检测来自在等离子体室中产生的感应耦合等离子体的电流，RF功率源以及耦合到所述一个或多个线圈元件中的每一个的一个或多个可调电容器。

9. 发明申请

US20110263050A1 LOW POWER RF TUNING USING OPTICAL AND NON-REFLECTED POWER METHODS 有权
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US20110263050A1
公开(公告)日：2011-10-27
申请号：US13177442
申请日：2011-07-06
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： H01L21/66
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.
摘要翻译：本发明的方面包括在基板处理系统中控制等离子体的方法。一个实施例提供了在处理第一组一个或多个基板之前控制在腔室内从等离子体反射的反射电磁辐射的第一组波长强度，将第一组反射电磁辐射的波长强度与处理中的RF功率相关联系统，基于反射电磁辐射的第一组波长强度调整匹配电路，处理衬底处理系统中的第一组一个或多个衬底，控制从等离子体反射的反射电磁辐射的第二组波长强度并且将反射的电磁辐射的第二组波长强度与处理系统内的RF功率相关联。

10. 发明申请

US20090162570A1 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：使用电感耦合等离子体技术处理基板的装置和方法
公开(公告)号：US20090162570A1
公开(公告)日：2009-06-25
申请号：US11960111
申请日：2007-12-19
申请人： Johanes F. Swenberg , Wei Liu , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark , Theresa Kramer Guarini , Woong Choi
发明人： Johanes F. Swenberg , Wei Liu , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark , Theresa Kramer Guarini , Woong Choi
IPC分类号： H05H1/24 , C23C16/503
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明通常提供了用于处理半导体衬底的装置和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

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