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1. 发明授权

US09012328B2 Carbon addition for low resistivity in situ doped silicon epitaxy 有权
标题翻译：用于低电阻率原位掺杂硅外延的碳添加
公开(公告)号：US09012328B2
公开(公告)日：2015-04-21
申请号：US13193566
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/311 , H01L21/02 , H01L29/66 , H01L29/78 , H01L21/8238
CPC分类号： H01L29/36 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02664 , H01L21/823814 , H01L29/167 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters.
摘要翻译：本发明的实施例一般涉及形成外延层的方法和具有外延层的器件。所述方法通常包括在衬底上形成包括磷和碳的第一外延层，然后在第一外延层上形成包括磷和碳的第二外延层。第二外延层具有比第一外延层更低的磷浓度，其允许在沉积期间沉积的第二外延层和不期望的非晶硅或多晶硅的选择性蚀刻。然后将衬底暴露于蚀刻剂以除去第二外延层和不期望的非晶硅或多晶硅。存在于第一和第二外延层中的碳减少了磷扩散，这允许更高的磷掺杂浓度。增加的磷浓度降低了最终装置的电阻率。这些器件包括具有小于约0.381毫欧姆厘米的电阻率的外延层。

2. 发明授权

US08728944B2 Method of removing contaminants and native oxides from a substrate surface 有权
标题翻译：从基材表面除去污染物和天然氧化物的方法
公开(公告)号：US08728944B2
公开(公告)日：2014-05-20
申请号：US13177409
申请日：2011-07-06
申请人： Satheesh Kuppurao , Manish Hemkar , Vinh Tran , Yihwan Kim
发明人： Satheesh Kuppurao , Manish Hemkar , Vinh Tran , Yihwan Kim
IPC分类号： H01L21/311
CPC分类号： H01L21/02052 , H01L21/02046 , H01L21/02238 , H01L21/67109 , H01L21/6719
摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.
摘要翻译：本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。然后可以在衬底的清洁表面上形成外延层。

3. 发明授权

US08652945B2 Epitaxy of high tensile silicon alloy for tensile strain applications 有权
标题翻译：用于拉伸应变应用的高强度硅合金的外延
公开(公告)号：US08652945B2
公开(公告)日：2014-02-18
申请号：US13193576
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02532 , H01L21/0257 , H01L21/02576 , H01L21/0262 , H01L29/1054 , H01L29/78
摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.
摘要翻译：本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

4. 发明申请

US20130330911A1 METHOD OF SEMICONDUCTOR FILM STABILIZATION 审中-公开
标题翻译：半导体膜稳定方法
公开(公告)号：US20130330911A1
公开(公告)日：2013-12-12
申请号：US13796061
申请日：2013-03-12
申请人： Yi-Chiau HUANG , Yihwan KIM , Errol Antonio C. SANCHEZ
发明人： Yi-Chiau HUANG , Yihwan KIM , Errol Antonio C. SANCHEZ
IPC分类号： H01L21/02
CPC分类号： H01L21/02535 , C30B25/02 , C30B29/52 , C30B31/06 , C30B33/02 , C30B33/12 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L29/7848
摘要： Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor gas is then introduced into the chamber concurrently with a stressor precursor gas, such as a tin precursor gas, to form an epitaxial layer. The flow of the germanium gas is then halted, and an etchant gas is introduced into the chamber. An etch back is then performed while in the presence of the stressor precursor gas used in the formation of the epitaxial film. The flow of the etchant gas is then stopped, and the cycle may then be repeated. In addition to or as an alternative to the etch back process, an annealing processing may be performed.
摘要翻译：本发明的实施方案一般涉及用于形成硅 - 锗 - 锡合金外延层，锗 - 锡合金外延层和可以掺杂有硼，磷，砷或其它n型或p型的锗外延层的锗外延层的方法掺杂剂所述方法通常包括将基底定位在处理室中。然后将锗前体气体与诸如锡前体气体的应激源前体气体同时引入室中，以形成外延层。然后停止锗气体的流动，并且将蚀刻剂气体引入室中。然后在存在用于形成外延膜的应力源前体气体的同时进行回蚀。然后停止蚀刻剂气体的流动，然后可以重复该循环。除了或作为回蚀刻工艺的替代方案，可以进行退火处理。

5. 发明申请

US20120273052A1 METHOD AND APPARATUS FOR GAS DELIVERY 有权
公开(公告)号：US20120273052A1
公开(公告)日：2012-11-01
申请号：US13097831
申请日：2011-04-29
申请人： ZHIYUAN YE , YIHWAN KIM
发明人： ZHIYUAN YE , YIHWAN KIM
IPC分类号： F16K25/00
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

6. 发明授权

US07897495B2 Formation of epitaxial layer containing silicon and carbon 有权
标题翻译：形成含有硅和碳的外延层
公开(公告)号：US07897495B2
公开(公告)日：2011-03-01
申请号：US11609608
申请日：2006-12-12
申请人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
发明人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
IPC分类号： H01L21/205
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

7. 发明申请

US20100255661A1 METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION 有权
标题翻译：用于沉积具有减少的界面污染的层的方法
公开(公告)号：US20100255661A1
公开(公告)日：2010-10-07
申请号：US12717266
申请日：2010-03-04
申请人： JEAN R. VATUS , JINSONG TANG , YIHWAN KIM , SATHEESH KUPPURAO , ERROL SANCHEZ
发明人： JEAN R. VATUS , JINSONG TANG , YIHWAN KIM , SATHEESH KUPPURAO , ERROL SANCHEZ
IPC分类号： H01L21/20
CPC分类号： H01L21/02538 , C23C16/0245 , C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02661
摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.
摘要翻译：本文公开了沉积具有减小的界面污染的层的方法。本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。

8. 发明授权

US07682940B2 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US07682940B2
公开(公告)日：2010-03-23
申请号：US11227974
申请日：2005-09-14
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
摘要翻译：在第一方面，提供了在基板上形成外延膜的第一种方法。第一种方法包括（a）提供基底; （b）将所述衬底暴露于至少硅源，以在所述衬底的至少一部分上形成外延膜; 和（c）将衬底暴露于HCl和Cl2，以蚀刻外延膜和在步骤（b）中形成的任何其它膜。提供了许多其他方面。

9. 发明授权

US07598178B2 Carbon precursors for use during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用的碳前体
公开(公告)号：US07598178B2
公开(公告)日：2009-10-06
申请号：US11690588
申请日：2007-03-23
申请人： Arkadii V. Samoilov , Rohini Kodali , Ali Zojaji , Yihwan Kim
发明人： Arkadii V. Samoilov , Rohini Kodali , Ali Zojaji , Yihwan Kim
IPC分类号： H01L21/336 , H01L21/302
CPC分类号： H01L21/32134 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/66272 , H01L29/6656 , H01L29/66636 , H01L29/732 , H01L29/7834
摘要： The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.
摘要翻译：本发明提供了在衬底上形成外延膜的系统和方法。在处理室中加热后，将衬底暴露于硅源和SiH2（CH3）2，SiH（CH3）3，Si（CH3）4,1,3-二硅烷和C2H2中的至少一种，温度大于约250摄氏度，压力大于约1托，以便在至少一部分基底上形成外延膜。然后，将衬底暴露于蚀刻剂，以蚀刻外延膜和沉积期间形成的任何其它膜。可以重复沉积和蚀刻，直到达到所需厚度的膜。公开了许多其他方面。

10. 发明申请

US20080182075A1 Phosphorus Containing Si Epitaxial Layers in N-Type Source/Drain Junctions 有权
标题翻译：含N型源极/漏极的Si外延层的磷
公开(公告)号：US20080182075A1
公开(公告)日：2008-07-31
申请号：US11957820
申请日：2007-12-17
申请人： Saurabh Chopra , Zhiyuan Ye , Yihwan Kim
发明人： Saurabh Chopra , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/8236 , H01L21/20 , C04B41/50 , B32B3/00
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/66628 , H01L29/7834 , Y10T428/24612
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source. An epitaxial layer may have considerable tensile stress which may be created in a significant amount by a high concentration of n-dopant. A layer having n-dopant may also have substitutional carbon. Phosphorus as an n-dopant with a high concentration is provided. A substrate having an epitaxial layer with a high level of n-dopant is also disclosed.
摘要翻译：公开了形成含有n掺杂硅的外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施方案中，n掺杂外延层的形成包括将处理室中的衬底暴露于包括硅源，碳源和n-掺杂剂源的沉积气体。外延层可能具有相当大的拉伸应力，这可以通过高浓度的n-掺杂物以显着的量产生。具有n-掺杂剂的层也可以具有取代的碳。提供了作为高浓度的n掺杂剂的磷。还公开了具有高水平的n掺杂剂的外延层的衬底。

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