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1. 发明申请

US20070287244A1 ALTERNATIVE INTEGRATION SCHEME FOR CMOS S/D SiGe PROCESS 审中-公开
标题翻译： CMOS S / D SiGe工艺的替代整合方案
公开(公告)号：US20070287244A1
公开(公告)日：2007-12-13
申请号：US11739099
申请日：2007-04-24
申请人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
发明人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
IPC分类号： H01L21/8236
CPC分类号： H01L21/823814 , H01L21/823864
摘要： A method for fabricating a semiconductor device with adjacent PMOS and NMOS devices on a substrate includes forming a PMOS gate electrode with a PMOS hardmask on a semiconductor substrate with a PMOS gate dielectric layer in between, forming an NMOS gate electrode with an NMOS hardmask on a semiconductor substrate with an NMOS gate dielectric layer in between, forming an oxide liner over a portion of the PMOS gate electrode and over a portion of the NMOS gate electrode, forming a lightly doped N-Halo implant, depositing a nitride layer over the oxide liner, depositing photoresist on the semiconductor substrate in a pattern that covers the NMOS device, etching the nitride layer from the PMOS device, wherein the etching nitride layer leaves a portion of the nitride layer on the oxide liner, etching semiconductor substrate to form a Si recess, and depositing SiGe into the Si recesses, wherein the SiGe and the nitride layer enclose the oxide liner. The method can also include implanting in the semiconductor substrate a source and drain region for the PMOS.
摘要翻译：一种用于在衬底上制造具有相邻PMOS和NMOS器件的半导体器件的方法包括在半导体衬底上形成具有PMOS硬掩模的PMOS栅电极，其间具有PMOS栅极介电层，在NMOS栅极上形成NMOS栅极半导体衬底，其间具有NMOS栅极介电层，在PMOS栅电极的一部分上方和NMOS栅电极的一部分之上形成氧化物衬垫，形成轻掺杂的N-Halo注入，在氧化物衬垫上沉积氮化物层以覆盖所述NMOS器件的图案沉积在所述半导体衬底上的光致抗蚀剂，从所述PMOS器件蚀刻所述氮化物层，其中所述蚀刻氮化物层离开所述氧化物衬底上的所述氮化物层的一部分，蚀刻半导体衬底以形成Si凹槽并且将SiGe沉积到Si凹部中，其中SiGe和氮化物层包围氧化物衬垫。该方法还可以包括在半导体衬底中注入用于PMOS的源极和漏极区域。

2. 发明申请

US20070284668A1 CMOS S/D SiGe DEVICE MADE WITH ALTERNATIVE INTEGRATION PROCESS 审中-公开
标题翻译： CMOS S / D SiGe器件与替代整合过程
公开(公告)号：US20070284668A1
公开(公告)日：2007-12-13
申请号：US11739103
申请日：2007-04-24
申请人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
发明人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/28044 , H01L21/823807 , H01L29/165 , H01L29/518 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device includes a substrate having regions filled with an additive that forms a source/drain for a MOS device, a gate dielectric layer deposited over the substrate, the gate dielectric layer electrically isolates the substrate from subsequently deposited layers, a gate electrode deposited over the gate dielectric layer, an oxide liner formed along laterally opposite sidewalls of the gate electrode, a nitride layer formed along the oxide liner extending above the gate electrode, and wherein the additive and the nitride layer enclose the gate electrode.
摘要翻译：半导体器件包括具有填充有添加剂的区域的衬底，其形成用于MOS器件的源极/漏极，沉积在衬底上的栅极电介质层，栅极介电层将衬底与随后沉积的层电隔离，栅极电极沉积在栅极电介质层，沿着栅电极的横向相对的侧壁形成的氧化物衬垫，沿着在栅电极上方延伸的氧化物衬垫形成的氮化物层，并且其中添加剂和氮化物层包围栅电极。

3. 发明申请

US20100229890A1 Method of Particle Contaminant Removal 有权
标题翻译：颗粒污染物去除方法
公开(公告)号：US20100229890A1
公开(公告)日：2010-09-16
申请号：US12401590
申请日：2009-03-10
申请人： Yizhak T. Sabba , Seokmin Yun , Mark Kawaguchi , Mark Wilcoxson , Dragan Podlesnik
发明人： Yizhak T. Sabba , Seokmin Yun , Mark Kawaguchi , Mark Wilcoxson , Dragan Podlesnik
IPC分类号： B08B3/00 , B08B7/00
CPC分类号： H01L21/02057 , H01L21/67051
摘要： Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.
摘要翻译：从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。外力施加到涂覆有粘弹性材料的表面的第一区域，使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。施加力比粘弹性材料的固有时间短的持续时间，以获得粘弹性材料的固体特性。具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除，而粘弹性材料呈现出固体状特征。

4. 发明授权

US08900374B2 Method for substrate cleaning including movement of substrate below substrate cleaning module 有权
标题翻译：基材清洗方法，包括基板清洗模块下方的基板运动
公开(公告)号：US08900374B2
公开(公告)日：2014-12-02
申请号：US12942446
申请日：2010-11-09
申请人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
发明人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
IPC分类号： B08B3/04 , H01L21/67
CPC分类号： H01L21/67051 , Y10S134/902
摘要： A substrate is moved below a substrate cleaning module in a direction extending from a leading edge to a trailing edge of the substrate cleaning module. A cleaning material is dispensed downward toward a top surface of the substrate along the leading edge of the substrate cleaning module. A rinsing material is dispensed downward toward the top surface of the substrate along the trailing edge of the substrate cleaning module to generate a rinsing meniscus. Vacuum suction is applied at a vacuum suction location along a bottom surface of the substrate cleaning module and parallel to the leading and trailing edges of the substrate cleaning module. The vacuum location is positioned between a dispense location of the cleaning material and a dispense location of the rinsing material. A plenum region located between the dispense location of the cleaning material and the vacuum location is vented.
摘要翻译：衬底沿着从衬底清洁模块的前缘延伸到后缘的方向移动到衬底清洁模块下方。清洁材料沿着衬底清洁模块的前缘朝向衬底的顶表面向下分配。冲洗材料沿衬底清洁模块的后缘向下分配到衬底的顶表面，以产生漂洗弯液面。真空抽吸沿着基板清洁模块的底表面在真空抽吸位置处并且平行于基板清洁模块的前缘和后缘施加。真空位置位于清洁材料的分配位置和冲洗材料的分配位置之间。位于清洁材料的分配位置和真空位置之间的集气室区域被排出。

5. 发明授权

US08757177B2 Multi-stage substrate cleaning method and apparatus 有权
标题翻译：多级基板清洗方法及装置
公开(公告)号：US08757177B2
公开(公告)日：2014-06-24
申请号：US13670006
申请日：2012-11-06
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： H01L21/673
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

6. 发明申请

US20140083463A1 SYSTEM AND METHOD FOR MONITORING WAFER STRESS 审中-公开
标题翻译：用于监测波浪应力的系统和方法
公开(公告)号：US20140083463A1
公开(公告)日：2014-03-27
申请号：US13624138
申请日：2012-09-21
申请人： John Valcore , Mark Kawaguchi , Cristian Paduraru
发明人： John Valcore , Mark Kawaguchi , Cristian Paduraru
IPC分类号： B08B5/04
CPC分类号： H01L21/67253
摘要： A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.
摘要翻译：一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种，以及由处理系统从其中移出的液体。该装置具有设置在其上的传感器部分。传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号，并且由处理系统从其中除去的液体。该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。

7. 发明申请

US20060289384A1 METHOD AND APPARATUS FOR PERFORMING HYDROGEN OPTICAL EMISSION ENDPOINT DETECTION FOR PHOTORESIST STRIP AND RESIDUE REMOVAL 失效
标题翻译：用于执行光电子条纹和残留物去除的氢光学发射端点检测的方法和装置
公开(公告)号：US20060289384A1
公开(公告)日：2006-12-28
申请号：US11467842
申请日：2006-08-28
申请人： Elizabeth Pavel , Mark Kawaguchi , James Papanu
发明人： Elizabeth Pavel , Mark Kawaguchi , James Papanu
IPC分类号： G01L21/30 , C23F1/00 , H01L21/302
CPC分类号： H01J37/32963 , H01J37/32935 , H01J2237/3342
摘要： Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.
摘要翻译：本文提供了在执行光致抗蚀剂剥离和从衬底或衬底上的膜堆叠移除残余物时监测和检测光发射的方法。在一个实施例中，提供了一种方法，其包括将包括光致抗蚀剂层的基板定位到处理室中; 使用多步骤等离子体处理来处理光致抗蚀剂层; 以及在所述多级等离子体处理期间监测所述等离子体的氢光发射; 其中所述多步骤等离子体处理包括使用块移除步骤去除大部分光致抗蚀剂层; 并且响应于所监视的氢光发射而切换到过蚀刻步骤。

8. 发明申请

US20100269285A1 APPARATUS AND SYSTEM FOR CLEANING SUBSTRATE 失效
标题翻译：用于清洁基板的装置和系统
公开(公告)号：US20100269285A1
公开(公告)日：2010-10-28
申请号：US12431731
申请日：2009-04-28
申请人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
发明人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , Y10S134/902
摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially unidirectional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.
摘要翻译：上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。上下处理头可以分别包括顶侧和底部模块的多个实例。

9. 发明申请

US20060032833A1 Encapsulation of post-etch halogenic residue 审中-公开
标题翻译：蚀刻后的卤素残留物的封装
公开(公告)号：US20060032833A1
公开(公告)日：2006-02-16
申请号：US10915519
申请日：2004-08-10
申请人： Mark Kawaguchi , Thorsten Lill , Anisul Khan
发明人： Mark Kawaguchi , Thorsten Lill , Anisul Khan
IPC分类号： B44C1/22
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/02071 , H01L21/32136
摘要： A method of etching is provided that includes transferring a substrate into a vacuum environment, etching a material layer on the substrate and depositing a polymeric film encapsulating etch residues on the substrate without removing the substrate from the vacuum environment.
摘要翻译：提供了一种蚀刻方法，其包括将衬底转移到真空环境中，蚀刻衬底上的材料层并且在衬底上沉积封装蚀刻残留物的聚合物膜，而不从真空环境中移除衬底。

10. 发明申请

US20130068261A1 MULTI-STAGE SUBSTRATE CLEANING METHOD AND APPARATUS 有权
标题翻译：多级基板清洗方法和装置
公开(公告)号：US20130068261A1
公开(公告)日：2013-03-21
申请号：US13670006
申请日：2012-11-06
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： B08B3/04
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

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