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41. 发明授权

US06936819B2 Microstructured pattern inspection method 有权
公开(公告)号：US06936819B2
公开(公告)日：2005-08-30
申请号：US10857956
申请日：2004-06-02
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： H01L21/027 , B32B3/00 , G01B11/00 , G01N23/225 , G01Q30/02 , G01Q30/04 , G03F7/20 , H01L21/66 , G01N23/00
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

42. 发明授权

US06791096B2 Process conditions change monitoring systems that use electron beams, and related monitoring methods 有权
公开(公告)号：US06791096B2
公开(公告)日：2004-09-14
申请号：US10079855
申请日：2002-02-22
申请人： Osamu Komuro , Hidetoshi Morokuma , Chie Shishido
发明人： Osamu Komuro , Hidetoshi Morokuma , Chie Shishido
IPC分类号： G01N23225
CPC分类号： G03F7/70641 , B82Y10/00 , B82Y40/00 , G03F7/70625 , H01J37/304 , H01J37/3174
摘要： In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.

43. 发明授权

US06573499B1 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US06573499B1
公开(公告)日：2003-06-03
申请号：US09684469
申请日：2000-10-06
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot. area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，在单芯片或单次拍摄的多个位置处的微结构化图案之间的位错矢量。同样计算一个晶片上的面积，然后将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并分析相应的趋势。因此，检测到步进器或晶片异常。

44. 发明授权

US09991092B2 Scanning electron microscope and sample observation method 有权
公开(公告)号：US09991092B2
公开(公告)日：2018-06-05
申请号：US13387183
申请日：2010-07-30
申请人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
发明人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
IPC分类号： G01N23/00 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2803
摘要： A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

45. 发明授权

US09129353B2 Charged particle beam device, and image analysis device 有权
标题翻译：带电粒子束装置和图像分析装置
公开(公告)号：US09129353B2
公开(公告)日：2015-09-08
申请号：US13980481
申请日：2012-01-19
申请人： Masumi Shirai , Osamu Komuro
发明人： Masumi Shirai , Osamu Komuro
IPC分类号： G06K9/36 , G06T7/00 , H01J37/28
CPC分类号： G06T7/0004 , H01J37/28 , H01J2237/0216 , H01J2237/24528 , H01J2237/24578 , H01J2237/2803 , H01J2237/2809 , H01J2237/2817 , H01J2237/2826
摘要： In a scanning electron microscope, if a failure is caused to occur in a SEM image by the influence of a disturbance such as magnetic field or vibration inside and from outside the device, the cause is identified simply and accurately using this SEM image. There is provided a measurement technique whose measurement accuracy is not influenced by a roughness of SEM image pattern. A one-dimensional scanning is performed in a scanning-line direction (X direction) by setting the Y-direction scanning gain at zero at the time of acquiring the SEM image, and a two-dimensional image is created by arranging image information, which is obtained by the scanning, in a time-series manner in the Y direction. A shift-amount data on the two-dimensional image is acquired using a correlation function, and the magnetic field or vibration included within the SEM image is measured by a frequency analysis of the data.
摘要翻译：在扫描电子显微镜中，如果通过诸如磁场或设备内部和外部的振动的干扰的影响在SEM图像中发生故障，则使用该SEM图像简单且准确地识别原因。提供了测量精度不受SEM图像粗糙度影响的测量技术。通过在获取SEM图像时将Y方向扫描增益设定为零，在扫描线方向（X方向）上进行一维扫描，并且通过布置图像信息来创建二维图像，其中通过在Y方向上以时间序列方式进行扫描获得。使用相关函数获取关于二维图像的偏移量数据，并且通过数据的频率分析来测量包括在SEM图像内的磁场或振动。

46. 发明授权

US08953855B2 Edge detection technique and charged particle radiation equipment 有权
标题翻译：边缘检测技术和带电粒子辐射设备
公开(公告)号：US08953855B2
公开(公告)日：2015-02-10
申请号：US12393321
申请日：2009-02-26
申请人： Hitoshi Namai , Osamu Komuro , Satoru Yamaguchi , Fumihiro Sasajima
发明人： Hitoshi Namai , Osamu Komuro , Satoru Yamaguchi , Fumihiro Sasajima
IPC分类号： G06K9/00 , G06K9/46 , G06T7/00
CPC分类号： G06K9/4609 , G06T7/13
摘要： An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).
摘要翻译：本发明的目的是提供一种能够通过抑制噪声的影响来稳定地检测边缘的边缘检测技术和设备，即使在通过诸如扫描电子显微镜的带电粒子辐射设备获得图像的情况下并具有较低的S / N比。更具体地，本发明是提出一种被配置为基于以下两个边缘提取技术来确定峰值位置（边缘）的技术和设备。也就是说，本发明提出一种技术和设备，其中通过使用作为边缘检测技术的至少两个峰形成例如具有相对较高灵敏度的一个峰值检测技术和相对较少的另一个峰值检测技术容易受到噪声的影响而不是一个峰值检测技术，并且其中峰值彼此重合的位置被确定为真正的峰值位置（边缘位置）。

47. 发明申请

US20130175447A1 Scanning Electron Microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US20130175447A1
公开(公告)日：2013-07-11
申请号：US13812451
申请日：2011-08-26
申请人： Yasunari Sohda , Hiromasa Yamanashi , Muneyuki Fukuda , Takeyoshi Ohashi , Osamu Komuro
发明人： Yasunari Sohda , Hiromasa Yamanashi , Muneyuki Fukuda , Takeyoshi Ohashi , Osamu Komuro
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/153 , H01J2237/1506 , H01J2237/1532 , H01J2237/2826
摘要： Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).
摘要翻译：本发明提供一种扫描电子显微镜，其配备有当由电子束柱产生的散光和从测量样品的周围产生的散光存在时使用的高速和高精度散光测量装置。该扫描电子显微镜的特征在于以高速和高精度控制像散校正器（201），以通过使用从改变后获得的二维图像的质量获得散光的方法来校正像散散光校正器（201）的强度，以及根据使用倾斜偏转器（202）使电子束倾斜时发生的电子束的位置偏移的变化来测量像散的方法。

48. 发明申请

US20130146763A1 Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof 有权
标题翻译：图像处理装置，带电粒子束装置，带电粒子束装置调整样品及其制造方法
公开(公告)号：US20130146763A1
公开(公告)日：2013-06-13
申请号：US13700096
申请日：2011-05-25
申请人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
发明人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
IPC分类号： G01B15/00 , G06K9/62
CPC分类号： G01B15/00 , G06K9/6201 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01J2237/2826 , Y10T428/24355
摘要： An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.
摘要翻译：本发明的目的是提供一种快速且精确地测量或评估视野中的失真和带电粒子束装置的图像处理装置。为了实现该目的，提出了一种图像处理装置等，其获取成像目标的第一区域的第一图像和位于与第一区域不同的位置的第二区域的第二图像，并且部分地与所述第一区域确定所述第二图像中的测量点和所述第二图像的与所述第一图像和所述第二图像的重叠区域中的多个位置的特定区域相对应的第二部分之间的距离。

49. 发明申请

US20120153145A1 SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD 有权
标题翻译：扫描电子显微镜和样品观察方法
公开(公告)号：US20120153145A1
公开(公告)日：2012-06-21
申请号：US13387183
申请日：2010-07-30
申请人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
发明人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2803
摘要： A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.
摘要翻译：本发明的扫描电子显微镜通过利用电子束扫描样品上的二维区域形成扫描区域的图像时，根据样品改变扫描线密度来进行扫描，或者设置有GUI 具有样本信息输入装置，其输入与样本有关的信息和根据输入显示推荐的扫描条件的显示装置，并通过选择推荐的扫描条件，根据样本以扫描线密度进行扫描。结果，在使用扫描电子显微镜观察的情况下，能够改善二维图案的轮廓的对比度并抑制由初级带电粒子辐射引起的充电的影响并抑制阴影的合适的扫描装置，并且通过提高检测率的二次电子和扫描方法。

50. 发明授权

US07941008B2 Pattern search method 有权
标题翻译：模式搜索方式
公开(公告)号：US07941008B2
公开(公告)日：2011-05-10
申请号：US11104632
申请日：2005-04-13
申请人： Norio Satou , Akiyuki Sugiyama , Osamu Komuro , Satoru Yamaguchi
发明人： Norio Satou , Akiyuki Sugiyama , Osamu Komuro , Satoru Yamaguchi
IPC分类号： G06K9/54
CPC分类号： G06T7/001
摘要： According to the pattern search method of the present invention, detection of a detection image region relative to an observation image is performed by a pattern matching. An image whose size is substantially the same as that of the observation image is used as the detection image region. The detection image region is relatively displaced with reference to the observation image, thereby detecting a degree of similarity for a common region which is common to both of the region and the image. Displacement range of the detection image region is set in advance. If area of the common region is larger than a predetermined value, calculating the degree of similarity will be performed.
摘要翻译：根据本发明的图案搜索方法，通过图案匹配来执行相对于观察图像的检测图像区域的检测。使用与观察图像基本相同的图像作为检测图像区域。检测图像区域相对于观察图像相对移位，从而检测对于区域和图像两者共同的公共区域的相似度。预先设定检测图像区域的位移范围。如果公共区域的面积大于预定值，则将执行相似度的计算。

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