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1. 发明授权

US09702695B2 Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof 有权
公开(公告)号：US09702695B2
公开(公告)日：2017-07-11
申请号：US13700096
申请日：2011-05-25
申请人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
发明人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
IPC分类号： G01N23/00 , G01B15/00 , H01J37/22 , H01J37/28 , G06K9/62
CPC分类号： G01B15/00 , G06K9/6201 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01J2237/2826 , Y10T428/24355
摘要： An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

2. 发明申请

US20140162351A1 CULTURING SHEET, CULTURING EQUIPMENT MATERIAL AND MANUFACTURING METHOD 审中-公开
标题翻译：文化用品，文化设备材料及制造方法
公开(公告)号：US20140162351A1
公开(公告)日：2014-06-12
申请号：US14131767
申请日：2011-08-29
申请人： Jiro Yamamoto , Naoshi Itabashi , Taku Saito , Akiko Hisada , Ryosuke Takahashi , Hiroshi Sonoda
发明人： Jiro Yamamoto , Naoshi Itabashi , Taku Saito , Akiko Hisada , Ryosuke Takahashi , Hiroshi Sonoda
IPC分类号： C12N5/071 , B29C59/02 , C12N5/04
CPC分类号： C12N5/0602 , B29C59/022 , C12M23/12 , C12M25/00 , C12N5/04
摘要： An operating efficiency of an observer is considerably restricted since it is not known at which position a culturing cell is disposed among a great number of pieces of holes of a culturing sheet. The culturing sheet is configured by a partitioning wall, a hole isolated by the partitioning wall, a local culturing region formed with plural local culturing region pillars a height of which is lower than that of the partitioning wall at a portion of a bottom face, and identification mark pillars formed at an identification mark region which differs from the culturing region at the bottom face of the hole. An identification mark is prevented from being unable to be optically recognized by adhering a spheroid to the identification mark region by making a diameter and a height of the identification mark pillar smaller than a diameter and a height of the local culturing pillar.
摘要翻译：观察者的操作效率受到相当的限制，因为在培养板的大量孔中不设置培养单元的位置。培养片由分隔壁，由分隔壁隔离的空穴构成，局部培养区形成有多个局部培养区柱，其高度低于底面部分的分隔壁，识别标记柱形成在与孔底面的培养区域不同的识别标记区域。通过使识别标记柱的直径和高度小于局部培养柱的直径和高度，通过将球体粘附到识别标记区域来防止识别标记不被光学识别。

3. 发明授权

US07931776B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07931776B2
公开(公告)日：2011-04-26
申请号：US11512339
申请日：2006-08-30
申请人： Naoshi Itabashi , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
发明人： Naoshi Itabashi , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/683 , H01T23/00
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32495 , H01J37/32935 , H01L21/6831
摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.
摘要翻译：一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理使用等离子体。该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化，并在气体注射板中异常注入。

4. 发明授权

US07908104B2 Plasma processing apparatus and method for detecting status of said apparatus 失效
标题翻译：一种用于检测所述装置的状态的等离子体处理装置和方法
公开(公告)号：US07908104B2
公开(公告)日：2011-03-15
申请号：US12025095
申请日：2008-02-04
申请人： Tsutomu Tetsuka , Naoshi Itabashi , Atsushi Itou
发明人： Tsutomu Tetsuka , Naoshi Itabashi , Atsushi Itou
IPC分类号： G01R23/16
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174 , H01J37/32935
摘要： The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.
摘要翻译：本发明提供了一种用于检测和管理具有高灵敏度的等离子体处理装置的状态以便能够进行长期稳定处理的方法。在包括真空处理室10，等离子体产生高频电源16和测量装置单元3的等离子体处理装置中，用于通过从包括a的处理装置反射的入射波53的反射波54估计装置的状态波形发生器32，VCO33，定向耦合器34，检测器35和测量数据处理单元36，将用于测量的频率扫描高频波53引入到不进行等离子体放电的处理室中，以便监视反射波54的吸收光谱频率的变化，从而监视处理装置的状态变化。

5. 发明授权

US07604709B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07604709B2
公开(公告)日：2009-10-20
申请号：US10247555
申请日：2002-09-20
申请人： Masaru Kurihara , Naoyuki Kofuji , Naoshi Itabashi , Takashi Tsutsumi
发明人： Masaru Kurihara , Naoyuki Kofuji , Naoshi Itabashi , Takashi Tsutsumi
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192
摘要： A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.
摘要翻译：一种等离子体处理装置，其在宽范围的压力和密度条件下，使用宽范围的种子气体稳定且连续地产生均匀的等离子体以处理大直径晶片，并且可以用于广泛的应用，确保高的生产效率。通过电介质窗将电磁波引入减压容器中的等离子体处理装置具有旋转对称的至少两个天线元件。每个天线的一端接地，并且电源从高频电源馈送到另一端，处于相同或相同的相位。

6. 发明授权

US07442651B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US07442651B2
公开(公告)日：2008-10-28
申请号：US11354919
申请日：2006-02-16
申请人： Masahito Mori , Toshiaki Nishida , Naoshi Itabashi , Motohiko Yoshigai , Hideyuki Kazumi , Kazutami Tago
发明人： Masahito Mori , Toshiaki Nishida , Naoshi Itabashi , Motohiko Yoshigai , Hideyuki Kazumi , Kazutami Tago
IPC分类号： H91L21/302
CPC分类号： H01L21/32136 , H01L21/28123 , H01L21/31138 , H01L21/32137 , H01L21/823828 , H01L21/823842 , H01L21/823878 , H01L21/84 , H01L22/26 , H01L29/66795
摘要： An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.
摘要翻译：提供一种能够以高选择性对在由高介电常数或“高k”绝缘体制成的电介质材料层上形成的含过渡金属元素的电极材料层进行蚀刻的蚀刻技术。为此，将工件放置在位于真空处理容器内的下电极上。工件具有电极材料层的多层结构，其中包含过渡金属元件和由高k绝缘体制成的电介质材料层。然后，在将真空处理容器内的处理气体导入真空处理容器的内部的同时，向真空处理容器的内部施加高频电力，进行等离子体转换，使工件在其表面被蚀刻。当蚀刻电极材料层时，作为处理气体供给HCl气体。

7. 发明申请

US20070056929A1 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070056929A1
公开(公告)日：2007-03-15
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： C23F1/00 , G01L21/30 , H01L21/306 , H01L21/302 , G01R31/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

8. 发明申请

US20050133162A1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20050133162A1
公开(公告)日：2005-06-23
申请号：US10784275
申请日：2004-02-24
申请人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
发明人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
IPC分类号： H01L21/3065 , C23F4/00 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
摘要翻译：一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁的10％的接地导电部件21a 内壁101的区域，具有允许来自等离子体的直流电流流过的结构，其中由导电构件21形成的直流接地位于等离子体（或等离子体密度）的浮动电位高于位于晶片保持电极14附近的等离子体9的浮动电位，其中存在相对较大的壁切屑。

9. 发明申请

US20050072444A1 Method for processing plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置的处理方法
公开(公告)号：US20050072444A1
公开(公告)日：2005-04-07
申请号：US10791856
申请日：2004-03-04
申请人： Shigeru Shirayone , Tetsuo Ono , Naoshi Itabashi , Motohiko Yoshigai , Takahiro Abe , Takahiro Shimomura , Hiroyuki Kitsunai
发明人： Shigeru Shirayone , Tetsuo Ono , Naoshi Itabashi , Motohiko Yoshigai , Takahiro Abe , Takahiro Shimomura , Hiroyuki Kitsunai
IPC分类号： B08B7/00 , H01L21/3213 , B08B3/12
CPC分类号： H01J37/32082 , B08B7/0035 , H01J2237/334 , H01L21/32136
摘要： A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.
摘要翻译：一种用于处理具有用于在处理室内产生等离子体的等离子体产生装置3,8,10,13至15的等离子体处理装置的方法，用于向要处理的物体17施加高频电力的高频电力施加装置18 ，排气装置7连接并能够将其内部抽真空的处理室1和用于处理室的气体供给装置（未示出），其中该方法包括将Si晶片17安装在用于保持的电极4上要处理的物体，将氢溴酸气体和氯气引入处理室并产生等离子体，以及去除附着在处理室内部的铝基沉积物。

10. 发明授权

US08546266B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US08546266B2
公开(公告)日：2013-10-01
申请号：US13212909
申请日：2011-08-18
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

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