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1. 发明授权

US09702695B2 Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof 有权
公开(公告)号：US09702695B2
公开(公告)日：2017-07-11
申请号：US13700096
申请日：2011-05-25
申请人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
发明人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
IPC分类号： G01N23/00 , G01B15/00 , H01J37/22 , H01J37/28 , G06K9/62
CPC分类号： G01B15/00 , G06K9/6201 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01J2237/2826 , Y10T428/24355
摘要： An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

2. 发明申请

US20130146763A1 Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof 有权
标题翻译：图像处理装置，带电粒子束装置，带电粒子束装置调整样品及其制造方法
公开(公告)号：US20130146763A1
公开(公告)日：2013-06-13
申请号：US13700096
申请日：2011-05-25
申请人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
发明人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
IPC分类号： G01B15/00 , G06K9/62
CPC分类号： G01B15/00 , G06K9/6201 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01J2237/2826 , Y10T428/24355
摘要： An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.
摘要翻译：本发明的目的是提供一种快速且精确地测量或评估视野中的失真和带电粒子束装置的图像处理装置。为了实现该目的，提出了一种图像处理装置等，其获取成像目标的第一区域的第一图像和位于与第一区域不同的位置的第二区域的第二图像，并且部分地与所述第一区域确定所述第二图像中的测量点和所述第二图像的与所述第一图像和所述第二图像的重叠区域中的多个位置的特定区域相对应的第二部分之间的距离。

3. 发明申请

US20090165951A1 PLASMA PROCESSING APPARATUS CAPABLE OF SUPPRESSING VARIATION OF PROCESSING CHARACTERISTICS 审中-公开
标题翻译：能够抑制加工特性变化的等离子体加工装置
公开(公告)号：US20090165951A1
公开(公告)日：2009-07-02
申请号：US12400266
申请日：2009-03-09
申请人： Naoshi Itabashi , Tsutomu Tetsuka , Atsushi Ito
发明人： Naoshi Itabashi , Tsutomu Tetsuka , Atsushi Ito
IPC分类号： C23F1/08
CPC分类号： H01J37/3299 , H01J37/32183 , H01J37/32211 , H01J37/32935
摘要： A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.
摘要翻译：等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

4. 发明申请

US20070134922A1 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US20070134922A1
公开(公告)日：2007-06-14
申请号：US11354919
申请日：2006-02-16
申请人： Masahito Mori , Toshiaki Nishida , Naoshi Itabashi , Motohiko Yoshigai , Hideyuki Kazumi , Kazutami Tago
发明人： Masahito Mori , Toshiaki Nishida , Naoshi Itabashi , Motohiko Yoshigai , Hideyuki Kazumi , Kazutami Tago
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01L21/28123 , H01L21/31138 , H01L21/32137 , H01L21/823828 , H01L21/823842 , H01L21/823878 , H01L21/84 , H01L22/26 , H01L29/66795
摘要： An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.
摘要翻译：提供一种能够以高选择性对在由高介电常数或“高k”绝缘体制成的电介质材料层上形成的含过渡金属元素的电极材料层进行蚀刻的蚀刻技术。为此，将工件放置在位于真空处理容器内的下电极上。工件具有电极材料层的多层结构，其中包含过渡金属元件和由高k绝缘体制成的电介质材料层。然后，在将真空处理容器内的处理气体导入真空处理容器的内部的同时，向真空处理容器的内部施加高频电力，进行等离子体转换，使工件在其表面被蚀刻。当蚀刻电极材料层时，作为处理气体供给HCl气体。

5. 发明授权

US6033481A Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US6033481A
公开(公告)日：2000-03-07
申请号：US225971
申请日：1999-01-06
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
摘要翻译：公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。

6. 发明授权

US5714757A Surface analyzing method and its apparatus 失效
标题翻译：表面分析方法及其装置
公开(公告)号：US5714757A
公开(公告)日：1998-02-03
申请号：US542562
申请日：1995-10-13
申请人： Naoshi Itabashi , Kozo Mochiji , Hiroyasu Shichi , Seiji Yamamoto , Satoshi Osabe , Keiichi Kanehori
发明人： Naoshi Itabashi , Kozo Mochiji , Hiroyasu Shichi , Seiji Yamamoto , Satoshi Osabe , Keiichi Kanehori
IPC分类号： G01N23/225 , G01Q90/00 , H01J37/252 , H01J37/08
CPC分类号： G01N23/2255 , H01J37/252 , H01J2237/04756
摘要： A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method. Since the ions irradiated on the sample surface are multiply-charged ions having a lower kinetic energy than that of threshold of sputtering of materials constituting a sample, the irradiated ions interact merely with the top surface layer of the sample whereby analyzed information merely from the top surface layer of the sample can be obtained, and as a result, the kind of atoms of the top surface layer of the sample and the bonding state of said atoms can be analyzed with high sensitivity and high resolution.
摘要翻译：一种表面分析方法，包括用于产生特定离子种类的多电荷离子和特定电荷状态的离子产生步骤; 减速步骤，用于将产生的多电荷离子减速到比目标材料的溅射阈值的能量更低的动能; 照射步骤，用于在样品的表面上照射减速的多电荷离子; 以及分析步骤，用于通过照射所述多电荷离子来分析从所述样品的表面发射的颗粒或光。提供了用于执行该方法的装置。由于照射在样品表面上的离子是具有比构成样品的材料的溅射阈值低的动能的多电荷离子，因此照射的离子仅与样品的顶表面层相互作用，从而仅从顶部分析信息可以获得样品的表面层，结果，可以以高灵敏度和高分辨率分析样品的顶表面层的原子的种类和所述原子的键合状态。

7. 发明授权

US09034270B2 Plasma sterilization and cleaning treatment device for escalator, and escalator using the same 有权
标题翻译：用于自动扶梯的等离子灭菌和清洁处理装置，以及使用相同的自动扶梯
公开(公告)号：US09034270B2
公开(公告)日：2015-05-19
申请号：US13342726
申请日：2012-01-03
申请人： Hiroyuki Kobayashi , Takumi Tandou , Naoshi Itabashi
发明人： Hiroyuki Kobayashi , Takumi Tandou , Naoshi Itabashi
IPC分类号： B01J19/08 , B66B23/24 , B66B31/02 , A61L2/14
CPC分类号： B66B31/02 , A61L2/14
摘要： Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided.
摘要翻译：执行自动扶梯扶手的灭菌和清洁。包括扶手的灭菌和清洁装置; 用于用离子或自由基或UV光照射扶手的等离子体源; 用于容纳等离子体源的外壳; 用于产生等离子体的电源; 用于在外壳中产生相对负压的风扇; 用于除去去除的细菌，病毒和有机物质如手标的过滤单元; 并且提供沿着手导轨位于外壳中的手轨的移动方向的后方和前方的过滤板。

8. 发明授权

US08926790B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08926790B2
公开(公告)日：2015-01-06
申请号：US11508187
申请日：2006-08-23
申请人： Tsutomu Tetsuka , Toshio Masuda , Naoshi Itabashi , Masanori Kadotani , Takashi Fujii
发明人： Tsutomu Tetsuka , Toshio Masuda , Naoshi Itabashi , Masanori Kadotani , Takashi Fujii
IPC分类号： H01J37/32 , C23C16/455 , C23C16/44 , C23C16/505
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/45565 , C23C16/505 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32504 , H01J37/32559
摘要： The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.
摘要翻译：本发明提供一种等离子体处理装置，旨在抑制由构成高频电极和气体供应单元的部件的等离子体损伤引起的反应性气体和重金属污染引起的腐蚀。等离子体处理装置包括用于对处理基板4进行等离子体处理的处理室1，用于将气体供给到处理室1的气体供给装置17,16和11以及用于提供高频辐射的天线电极10 气体产生等离子体，其中气体供给装置包括在暴露于等离子体的表面上具有气体排放孔的气体喷淋板11和暴露于构成天线电极侧的气体的导体10的一部分或整个表面气体供给装置经受不含重金属的陶瓷喷涂以形成保护膜12。

9. 发明申请

US20130323839A1 Culture Substrate and Culture Sheet 审中-公开
标题翻译：文化底物和文化表
公开(公告)号：US20130323839A1
公开(公告)日：2013-12-05
申请号：US13996074
申请日：2010-12-22
申请人： Ryosuke Takahashi , Akiko Hisada , Hiroshi Sonoda , Taku Saito , Naoshi Itabashi , Jiro Yamamoto
发明人： Ryosuke Takahashi , Akiko Hisada , Hiroshi Sonoda , Taku Saito , Naoshi Itabashi , Jiro Yamamoto
IPC分类号： G01N33/50
CPC分类号： G01N33/5008 , C12M25/00 , C12M25/06
摘要： Provided is a culture sheet which enables a technique for forming a three-dimensional tissue having uniform diameter without applying any chemical on the surface of a culture substrate. On the culture sheet (150) of the culture substrate, a plurality of holes (152) are formed and nanopillars (153), which are capable of controlling the adhesiveness and migration ability of cells, are formed on the bottom surface of each hole (152), said bottom face serving as a culture surface. The culture surface of each hole (151) is provided with a partition wall (152) and the internal nanopillars (153) are formed in the vicinity of the center of the hole (151). Owing to this configuration, the interaction among the disseminated cells can be restricted so that uniformly sized three-dimensional structures of the cells can be formed.
摘要翻译：提供一种培养片，其能够形成具有均匀直径的三维组织的技术，而不在培养基材的表面上施加任何化学物质。在培养基板的培养板（150）上形成有多个孔（152），并且能够控制细胞的粘附性和迁移能力的纳米柱（153）形成在各孔的底面 152），所述底面用作培养表面。每个孔（151）的培养表面设置有分隔壁（152），并且内孔纳米柱（153）形成在孔（151）的中心附近。由于这种构造，可以限制扩散细胞之间的相互作用，从而可以形成均匀尺寸的细胞的三维结构。

10. 发明授权

US08129283B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08129283B2
公开(公告)日：2012-03-06
申请号：US12068889
申请日：2008-02-13
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.
摘要翻译：本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

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