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1. 发明申请

US20090020699A1 MICROSTRUCTURED PATTERN INSPECTION METHOD 有权
标题翻译：微结构图案检测方法
公开(公告)号：US20090020699A1
公开(公告)日：2009-01-22
申请号：US12208389
申请日：2008-09-11
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

2. 发明授权

US07435959B2 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US07435959B2
公开(公告)日：2008-10-14
申请号：US11798395
申请日：2007-05-14
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

3. 发明授权

US07217923B2 Microstructured pattern inspection method 有权
公开(公告)号：US07217923B2
公开(公告)日：2007-05-15
申请号：US11197584
申请日：2005-08-05
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

4. 发明申请

US20050277029A1 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US20050277029A1
公开(公告)日：2005-12-15
申请号：US11197584
申请日：2005-08-05
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： H01L21/027 , B32B3/00 , G01B11/00 , G01N23/225 , G01Q30/02 , G01Q30/04 , G03F7/20 , H01L21/66
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

5. 发明申请

US20070290697A1 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US20070290697A1
公开(公告)日：2007-12-20
申请号：US11798395
申请日：2007-05-14
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/00
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

6. 发明授权

US06936819B2 Microstructured pattern inspection method 有权
公开(公告)号：US06936819B2
公开(公告)日：2005-08-30
申请号：US10857956
申请日：2004-06-02
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： H01L21/027 , B32B3/00 , G01B11/00 , G01N23/225 , G01Q30/02 , G01Q30/04 , G03F7/20 , H01L21/66 , G01N23/00
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

7. 发明授权

US06573499B1 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US06573499B1
公开(公告)日：2003-06-03
申请号：US09684469
申请日：2000-10-06
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot. area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，在单芯片或单次拍摄的多个位置处的微结构化图案之间的位错矢量。同样计算一个晶片上的面积，然后将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并分析相应的趋势。因此，检测到步进器或晶片异常。

8. 发明授权

US08304724B2 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US08304724B2
公开(公告)日：2012-11-06
申请号：US12848278
申请日：2010-08-02
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225 , G01N23/00
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

9. 发明授权

US07791021B2 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US07791021B2
公开(公告)日：2010-09-07
申请号：US12208389
申请日：2008-09-11
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

10. 发明授权

US06765204B2 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US06765204B2
公开(公告)日：2004-07-20
申请号：US10389882
申请日：2003-03-18
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测在光刻胶的表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

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