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21. 发明申请

US20050199489A1 Electroless deposition apparatus 审中-公开
标题翻译：无电沉积装置
公开(公告)号：US20050199489A1
公开(公告)日：2005-09-15
申请号：US11090919
申请日：2005-03-25
申请人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
发明人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
IPC分类号： C23C18/18 , C23C18/16 , C25D7/12 , H01L21/00 , H01L21/28 , H01L21/288 , C25C7/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

22. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

23. 发明申请

US20080047841A1 ELECTROPROCESSING PROFILE CONTROL 审中-公开
标题翻译：电子轮廓控制
公开(公告)号：US20080047841A1
公开(公告)日：2008-02-28
申请号：US11877223
申请日：2007-10-23
申请人： ANTOINE MANENS , Vladimir Galburt , Yan Wang , Alain Duboust , Donald Olgado , Liang-Yuh Chen
发明人： ANTOINE MANENS , Vladimir Galburt , Yan Wang , Alain Duboust , Donald Olgado , Liang-Yuh Chen
IPC分类号： C25F3/02 , C25F7/00
CPC分类号： B23H5/08 , B24B37/042 , C25D17/10 , C25F7/00
摘要： Embodiments of the present invention provide an apparatus for electrochemically processing a substrate. The apparatus comprises a processing layer having a surface adapted for processing a substrate thereon, a polishing head for retaining a substrate against the processing surface, a retaining ring a terminal adapted for coupling to a power source, and a plurality of independently biasable electrodes disposed below the processing layer.
摘要翻译：本发明的实施例提供了一种用于电化学处理衬底的装置。该装置包括具有适于在其上处理基板的表面的处理层，用于将基板保持在处理表面上的抛光头，保持环用于耦合到电源的端子和设置在电源下方的多个可独立施加的电极处理层。

24. 发明授权

US07232363B2 Polishing solution retainer 有权
标题翻译：抛光液固定器
公开(公告)号：US07232363B2
公开(公告)日：2007-06-19
申请号：US10942600
申请日：2004-09-16
申请人： Hanzhong Zhang , Feng Liu , Stan Tsai , Rashid Mavliev , Donald Olgado , Liang-Yuh Chen
发明人： Hanzhong Zhang , Feng Liu , Stan Tsai , Rashid Mavliev , Donald Olgado , Liang-Yuh Chen
IPC分类号： B24B57/02 , B24B7/22
CPC分类号： B24B37/04 , B24B57/02
摘要： A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.
摘要翻译：对基板研磨装置和方法进行说明。基座包括至少一个可移动的压板以接合抛光垫。在抛光操作期间，至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。抛光溶液保持机构附接到基座或承载头组件中的一个。保持机构接合抛光垫的顶表面，并且在抛光操作期间将抛光液基本保持在抛光区域内。一些实施方案可以减少抛光溶液消耗并允许增加的角速度。

25. 发明申请

US20070131654A1 Methods and apparatus for processing a substrate 有权
标题翻译：用于处理衬底的方法和设备
公开(公告)号：US20070131654A1
公开(公告)日：2007-06-14
申请号：US11299295
申请日：2005-12-09
申请人： Erik Wasinger , Gary Ettinger , Sen-Hou Ko , Wei-Yung Hsu , Liang-Yuh Chen , Ho Shin , Donald Olgado
发明人： Erik Wasinger , Gary Ettinger , Sen-Hou Ko , Wei-Yung Hsu , Liang-Yuh Chen , Ho Shin , Donald Olgado
IPC分类号： C03C15/00 , H01L21/306
CPC分类号： C03C19/00 , B24B1/04 , B24B9/065 , B24B21/004 , H01L21/02021
摘要： Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.
摘要翻译：适于抛光衬底边缘的装置和方法包括抛光膜，适于张紧和加载抛光膜的框架，使得膜的至少一部分被支撑在平面中，以及基板旋转驱动器，其适于旋转衬底抵靠抛光膜的平面，使得抛光膜适于对衬底施加力，轮廓到衬底的边缘，边缘至少包括外边缘和第一斜面，并且抛光外边缘和第一斜面作为基底旋转。提供了许多其他方面。

26. 发明申请

US20050178666A1 Methods for fabrication of a polishing article 审中-公开
标题翻译：制造抛光制品的方法
公开(公告)号：US20050178666A1
公开(公告)日：2005-08-18
申请号：US11034225
申请日：2005-01-12
申请人： Stan Tsai , Ralph Waldensweiler , Yongqi Hu , Liang-Yuh Chen , Donald Olgado
发明人： Stan Tsai , Ralph Waldensweiler , Yongqi Hu , Liang-Yuh Chen , Donald Olgado
IPC分类号： B23K5/08 , C25D5/02 , C25D5/34 , C25D7/00 , C25D7/12 , C25D17/14 , C25F7/00
CPC分类号： C25F7/00 , B23K5/08 , C25D7/123 , C25D17/14
摘要： Methods are provided for forming a conductor for use in electrochemical mechanical polishing. In one aspect a method is provided for processing a substrate including providing a substrate having a conductive surface, depositing a resist material on the conductive surface, patterning the resist layer to expose portions of the conductive surface, and depositing a metal layer on the exposed portions of the conductive surface by an electrochemical deposition technique.
摘要翻译：提供了用于形成用于电化学机械抛光的导体的方法。在一个方面，提供了一种用于处理衬底的方法，包括提供具有导电表面的衬底，在导电表面上沉积抗蚀剂材料，图案化抗蚀剂层以暴露导电表面的部分，以及在暴露部分上沉积金属层的导电表面。

27. 发明申请

US20050000801A1 Method and apparatus for electrochemical mechanical processing 失效
标题翻译：电化学机械加工的方法和装置
公开(公告)号：US20050000801A1
公开(公告)日：2005-01-06
申请号：US10880752
申请日：2004-06-30
申请人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
发明人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
IPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , H01L21/321 , C25D17/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/16 , B24B49/16 , B24B53/017 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。残余处理单元包括偏置的导电平面化表面。在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

28. 发明授权

US6071372A RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
标题翻译： RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁
公开(公告)号：US6071372A
公开(公告)日：2000-06-06
申请号：US869798
申请日：1997-06-05
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

29. 发明授权

US5883017A Compartmentalized substrate processing chamber 失效
标题翻译：隔板基板处理室
公开(公告)号：US5883017A
公开(公告)日：1999-03-16
申请号：US916161
申请日：1997-09-02
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

30. 发明授权

US5730801A Compartnetalized substrate processing chamber 失效
标题翻译：基板处理室
公开(公告)号：US5730801A
公开(公告)日：1998-03-24
申请号：US296043
申请日：1994-08-23
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

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