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1. 发明申请

US20060019581A1 Polishing solution retainer 有权
标题翻译：抛光液固定器
公开(公告)号：US20060019581A1
公开(公告)日：2006-01-26
申请号：US10942600
申请日：2004-09-16
申请人： Hanzhong Zhang , Feng Liu , Stan Tsai , Rashid Mavliev , Donald Olgado , Liang-Yuh Chen
发明人： Hanzhong Zhang , Feng Liu , Stan Tsai , Rashid Mavliev , Donald Olgado , Liang-Yuh Chen
IPC分类号： B24B1/00
CPC分类号： B24B37/04 , B24B57/02
摘要： A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.
摘要翻译：对基板研磨装置和方法进行说明。基座包括至少一个可移动的压板以接合抛光垫。在抛光操作期间，至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。抛光溶液保持机构附接到基座或承载头组件中的一个。保持机构接合抛光垫的顶表面，并且在抛光操作期间将抛光液基本保持在抛光区域内。一些实施方案可以减少抛光溶液消耗并允许增加的角速度。

2. 发明授权

US07232363B2 Polishing solution retainer 有权
标题翻译：抛光液固定器
公开(公告)号：US07232363B2
公开(公告)日：2007-06-19
申请号：US10942600
申请日：2004-09-16
申请人： Hanzhong Zhang , Feng Liu , Stan Tsai , Rashid Mavliev , Donald Olgado , Liang-Yuh Chen
发明人： Hanzhong Zhang , Feng Liu , Stan Tsai , Rashid Mavliev , Donald Olgado , Liang-Yuh Chen
IPC分类号： B24B57/02 , B24B7/22
CPC分类号： B24B37/04 , B24B57/02
摘要： A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.
摘要翻译：对基板研磨装置和方法进行说明。基座包括至少一个可移动的压板以接合抛光垫。在抛光操作期间，至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。抛光溶液保持机构附接到基座或承载头组件中的一个。保持机构接合抛光垫的顶表面，并且在抛光操作期间将抛光液基本保持在抛光区域内。一些实施方案可以减少抛光溶液消耗并允许增加的角速度。

3. 发明申请

US20050000801A1 Method and apparatus for electrochemical mechanical processing 失效
标题翻译：电化学机械加工的方法和装置
公开(公告)号：US20050000801A1
公开(公告)日：2005-01-06
申请号：US10880752
申请日：2004-06-30
申请人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
发明人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
IPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , H01L21/321 , C25D17/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/16 , B24B49/16 , B24B53/017 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。残余处理单元包括偏置的导电平面化表面。在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

4. 发明申请

US20050284770A1 Conductive polishing article for electrochemical mechanical polishing 有权
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US20050284770A1
公开(公告)日：2005-12-29
申请号：US11215254
申请日：2005-08-30
申请人： Paul Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
发明人： Paul Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
IPC分类号： B23H5/00 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , C25D17/00 , C25D17/10 , H01L21/321
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/22 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.
摘要翻译：提供了用于研磨衬底的抛光制品的实施例。在一个实施例中，抛光制品包括具有抛光表面的环形上层，以及耦合到上层并与其形成可更换组件的导电层。

5. 发明申请

US20060124474A1 Method and apparatus for local polishing control 审中-公开
标题翻译：本地抛光控制方法和装置
公开(公告)号：US20060124474A1
公开(公告)日：2006-06-15
申请号：US11343360
申请日：2006-01-31
申请人： Stan Tsai , Feng Liu , Yan Wang , Rashid Mavliev , Liang-Yuh Chen , Alain Duboust
发明人： Stan Tsai , Feng Liu , Yan Wang , Rashid Mavliev , Liang-Yuh Chen , Alain Duboust
IPC分类号： B23H3/00
CPC分类号： B24B37/046 , B24B37/26 , B24B49/10 , C25F7/00 , H01L21/32125
摘要： A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.
摘要翻译：通常提供用于处理室中的局部抛光和沉积控制的方法和装置。在一个实施例中，提供了一种用于电化学处理衬底的设备，其通过控制跨越处理区域的电偏压分布来选择性地抛光衬底的离散导电部分，从而控制衬底的两个或更多导电部分之间的处理速率。

6. 发明申请

US20050282380A1 METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR SUBSTRATES 失效
标题翻译：半导体基板的化学机械抛光方法与装置
公开(公告)号：US20050282380A1
公开(公告)日：2005-12-22
申请号：US10972191
申请日：2004-10-22
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： B24B37/04 , B24B49/16 , H01L21/321 , H01L21/768 , H01L21/00 , B24B49/00 , B24B51/00 , H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

7. 发明申请

US20080026681A1 CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING 失效
标题翻译：电化学机械抛光导电抛光法
公开(公告)号：US20080026681A1
公开(公告)日：2008-01-31
申请号：US11868829
申请日：2007-10-08
申请人： PAUL BUTTERFIELD , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
发明人： PAUL BUTTERFIELD , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
IPC分类号： B24B29/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/22 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.
摘要翻译：提供了用于研磨衬底的抛光制品的实施例。在一个实施例中，抛光制品包括由与由导电材料制成的环形下层耦合的电介质材料制成的环形上层，以及夹在环形上层和环形下层之间的环形子垫，其与之形成可更换组件。

8. 发明申请

US20060166487A1 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US20060166487A1
公开(公告)日：2006-07-27
申请号：US11393999
申请日：2006-03-30
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

9. 发明申请

US20050092621A1 Composite pad assembly for electrochemical mechanical processing (ECMP) 审中-公开
标题翻译：电化学机械加工复合垫组件（ECMP）
公开(公告)号：US20050092621A1
公开(公告)日：2005-05-05
申请号：US10980888
申请日：2004-11-03
申请人： Yongqi Hu , Stan Tsai , Feng Liu , Liang-Yuh Chen , Ralph Wadensweiler , Paul Butterfield , Donald Olgado , Martin Wohlert , Sen-Hou Ko , Shou-Sung Chang
发明人： Yongqi Hu , Stan Tsai , Feng Liu , Liang-Yuh Chen , Ralph Wadensweiler , Paul Butterfield , Donald Olgado , Martin Wohlert , Sen-Hou Ko , Shou-Sung Chang
IPC分类号： B23H5/00
CPC分类号： B23H5/06
摘要： Embodiments of a pad assembly for processing a substrate is provided herein. In one embodiment, the pad assembly includes a body that has a non-conductive first surface and an opposing second surface. A conductive element has a planar first surface laterally disposed from the non-conductive first surface and defines a top processing surface therewith. An electrode is coupled to the second surface of the body. A first set of holes is formed through the body and exposes the electrode to the processing surface.
摘要翻译：本文提供了用于处理衬底的焊盘组件的实施例。在一个实施例中，垫组件包括具有非导电的第一表面和相对的第二表面的主体。导电元件具有从非导电的第一表面横向设置的平坦的第一表面，并且与其形成顶部处理表面。电极连接到主体的第二表面。第一组孔穿过主体形成并将电极暴露于处理表面。

10. 发明授权

US07569134B2 Contacts for electrochemical processing 失效
标题翻译：电化学处理接点
公开(公告)号：US07569134B2
公开(公告)日：2009-08-04
申请号：US11424170
申请日：2006-06-14
申请人： Paul Butterfield , Liang-Yuh Chen , Yongqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai
发明人： Paul Butterfield , Liang-Yuh Chen , Yongqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai
IPC分类号： B23H5/06 , C25D17/00
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/046 , B24B37/24 , B24B53/017
摘要： Systems and methods for electrochemically processing a substrate. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.
摘要翻译：用于电化学处理衬底的系统和方法。接触元件限定在处理期间可定位成接触衬底的衬底接触表面。在一个实施例中，接触元件包括线元件。在另一个实施例中，接触元件是旋转构件。在一个实施例中，接触元件包括贵金属。

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