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91. 发明授权

US06509069B1 Method of reducing the cleaning requirements of a dielectric chuck surface 失效
标题翻译：降低电介质卡盘表面清洁要求的方法
公开(公告)号：US06509069B1
公开(公告)日：2003-01-21
申请号：US08848936
申请日：1997-05-01
申请人： Robert E. Davenport , Avi Tepman
发明人： Robert E. Davenport , Avi Tepman
IPC分类号： C23C1600
CPC分类号： H01L21/67109 , C23C14/541 , C23C14/564 , H01L21/67103 , H01L21/68 , H01L21/6831 , Y10S269/903 , Y10S277/913 , Y10S277/922 , Y10S277/932 , Y10T279/23 , Y10T403/477 , Y10T403/479
摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3×10−3 in./in./° C., measured at 600° C., between the surfaces to be bridged by the thin, metal-comprising layer.
摘要翻译：本发明涉及一种在半导体处理中有用的装置和方法。该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分以第一压力操作，同时半导体处理室的第二部分在第二不同压力下操作。密封装置和方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热装置的热传递的压力下。密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离其他。优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。当线性膨胀系数差为至少3×10 -3 in / in时，本发明特别有用。 /℃，在600℃下测量，待被薄的含金属层覆盖的表面之间。

92. 发明授权

US06350353B2 Alternate steps of IMP and sputtering process to improve sidewall coverage 失效
公开(公告)号：US06350353B2
公开(公告)日：2002-02-26
申请号：US09449202
申请日：1999-11-24
申请人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
发明人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/321 , H01J37/3408
摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

93. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

94. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

95. 发明授权

US06254746B1 Recessed coil for generating a plasma 失效
标题翻译：用于产生等离子体的嵌入式线圈
公开(公告)号：US06254746B1
公开(公告)日：2001-07-03
申请号：US08853024
申请日：1997-05-08
申请人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
发明人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
IPC分类号： C23C1434
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。嵌入线圈减少材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。

96. 发明授权

US06228235B1 Magnetron for low pressure, full face erosion 有权
标题翻译：磁控管为低压，全面侵蚀
公开(公告)号：US06228235B1
公开(公告)日：2001-05-08
申请号：US09261002
申请日：1999-03-02
申请人： Avi Tepman , James van Gogh
发明人： Avi Tepman , James van Gogh
IPC分类号： C23C1435
CPC分类号： H01J37/3494 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.
摘要翻译：一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在随后的溅射高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。溅射的高压相的压力高于溅射的低压相的压力。

97. 发明授权

US6143086A Apparatus for full wafer deposition 有权
标题翻译：全晶圆沉积装置
公开(公告)号：US6143086A
公开(公告)日：2000-11-07
申请号：US309016
申请日：1999-05-10
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： H01L21/203 , C23C14/50 , C23C14/56 , C23C16/44 , C23C16/458 , H01L21/205 , C23C16/00 , C23C14/00
CPC分类号： C23C16/4585 , C23C14/50 , C23C14/564 , C23C16/4401
摘要： A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate. Also, a peripheral groove may be formed in the substrate support peripheral to the substrate, for preventing material deposited on the support peripheral to the substrate from sticking to the substrate. The substrate is supported on spacers mounted on the substrate support; the resulting gap between the substrate and the support also prevents the material deposited on the support from bonding to the substrate. The result of the various features is an effective shield which allows long intervals before the shield must be removed for cleaning or replacement and which is easy to remove when necessary. In addition, the entire upper surface of the substrate is available for processing.
摘要翻译：公开了用于处理诸如化学气相沉积（CVD），离子注入或物理气相沉积（PVD）或溅射室的室的容易移除的沉积屏蔽。沉积屏蔽包括圆柱形构造的屏蔽件（或符合衬底和室的内部形状的其它构造），其被安装到腔室以便容易地移除，例如通过螺钉，并且限定沿着衬底的周边的空间支持。屏蔽环插入到外围空间中，因此以可移动的方式安装并且自动围绕基板居中。屏蔽环与圆柱形屏蔽和基板支撑重叠。总的来说，这些部件防止在处理区域外的室和硬件上沉积。此外，圆柱形护罩和屏蔽环可以作为一个单元被移除。诸如销的定位装置可以围绕基板的周边安装或形成在支撑件中，以使基板居中。此外，可以在基板周边的基板支撑件中形成外围槽，以防止沉积在基板周围的支撑体上的材料粘附到基板。基板被支撑在安装在基板支撑件上的间隔件上; 衬底和支撑体之间的所产生的间隙也防止沉积在支撑体上的材料结合到衬底上。各种功能的结果是有效的屏蔽，在屏蔽层必须移除以进行清洁或更换之前允许长时间间隔，并且在必要时易于移除。此外，衬底的整个上表面可用于处理。

98. 发明授权

US6045620A Two-piece slit valve insert for vacuum processing system 失效
标题翻译：两片式真空处理系统的狭缝阀插件
公开(公告)号：US6045620A
公开(公告)日：2000-04-04
申请号：US893813
申请日：1997-07-11
申请人： Avi Tepman , Robert B. Lowrance
发明人： Avi Tepman , Robert B. Lowrance
IPC分类号： H01L21/302 , F16K27/00 , H01L21/00 , H01L21/205 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/67126 , Y10S414/139 , Y10T29/49716
摘要： A vacuum processing system has a transfer chamber with a slit valve at which is attached a process chamber and with a slit valve insert disposed in the slit valve for matching up with the process chamber. The slit valve may be made of two pieces, an outer portion that slides into the transfer chamber's slit valve opening from the outside of the transfer chamber, and an inner portion that slides into the outer portion from the inside of the transfer chamber. The portions of the insert permit any process chamber to be attached to any slit valve opening. The outer portion may not be removed from the slit valve opening when a process chamber is attached to the transfer chamber, but the inner portion may be easily removed for servicing regardless of in whether a process chamber is attached.
摘要翻译：真空处理系统具有带有狭缝阀的传送室，在该传送室上安装有处理室和设置在狭缝阀中的狭缝阀插入件，用于与处理室匹配。狭缝阀可以由两片制成，外部从转印室的外侧滑入转印室的狭缝阀开口，以及从转印室的内部滑入外部的内部。插入部分允许任何处理室连接到任何狭缝阀开口。当处理室附接到传送室时，外部可能不从狭缝阀开口移除，但是无论是否附着处理室，内部可以容易地移除用于维修。

99. 发明授权

US5964947A Removable pumping channel liners within a chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室内可拆卸的泵送通道衬管
公开(公告)号：US5964947A
公开(公告)日：1999-10-12
申请号：US857847
申请日：1997-05-16
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了在排出室的泵送通道中导电材料的热沉积。泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

100. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

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