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1. 发明申请

US20090205737A1 INSULATED PIPE AND METHOD FOR PREPARING THE SAME 有权
标题翻译：绝缘管及其制备方法
公开(公告)号：US20090205737A1
公开(公告)日：2009-08-20
申请号：US11916646
申请日：2006-06-06
申请人： John L. Dinon , Hobart C. Kalkstein , Nirmalya Maity , Ravijit Paintal , Aaron H. Johnson , Andries Du Plessis
发明人： John L. Dinon , Hobart C. Kalkstein , Nirmalya Maity , Ravijit Paintal , Aaron H. Johnson , Andries Du Plessis
IPC分类号： F16L9/14 , B23P11/00
CPC分类号： F16L59/143 , C04B30/00 , C04B38/08 , F16L59/028 , F16L59/153 , Y10T29/49826 , C04B14/064 , C04B14/06 , C04B38/0054
摘要： The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.
摘要翻译：本发明提供了一种绝缘的管内管组件，其包括（a）至少一个内管，（b）围绕所述至少一个内管设置的外管，以在外管和内管之间产生环形空间（ c）设置在环形空间中的多孔，弹性，可压缩材料，以及（d）容器的剩余部分，其先前已经被定位在环形空间中，并且预先将可压缩材料保持在小于可压缩材料的体积的体积中环形空间。本发明还提供了一种制造这种绝缘管内管组件的方法。

2. 发明申请

US20080032041A1 ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA 有权
标题翻译：使用TANTALUM PRECURSOR TAIMATA的含钽材料的原子层沉积
公开(公告)号：US20080032041A1
公开(公告)日：2008-02-07
申请号：US11773302
申请日：2007-07-03
申请人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
发明人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
IPC分类号： B05D5/12
CPC分类号： H01L29/495 , C23C16/18 , C23C16/30 , C23C16/45553 , H01L21/28079 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L29/4958 , H01L29/517
摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.
摘要翻译：在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

3. 发明授权

US07264846B2 Ruthenium layer formation for copper film deposition 失效
标题翻译：用于铜膜沉积的钌层形成
公开(公告)号：US07264846B2
公开(公告)日：2007-09-04
申请号：US10634662
申请日：2003-08-04
申请人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
发明人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
IPC分类号： C23C16/00
CPC分类号： H01L21/76874 , B82Y30/00 , C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873
摘要： A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.
摘要翻译：描述了用于高纵横比的互连特征的钌层形成方法。使用循环沉积工艺形成钌层。循环沉积工艺包括在基底结构上交替地吸附含钌前体和还原气体。吸附的含钌前驱体与吸附的还原气体反应，以在衬底上形成钌层。

4. 发明授权

US07169271B2 Magnetron executing planetary motion adjacent a sputtering target 有权
标题翻译：磁控管在溅射靶附近执行行星运动
公开(公告)号：US07169271B2
公开(公告)日：2007-01-30
申请号：US10862257
申请日：2004-06-07
申请人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
发明人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/345 , C23C14/35 , C23C14/355 , H01J37/3405 , H01J37/3408
摘要： A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.
摘要翻译：小型磁体组件在逆行星行星或行星路径周围围绕目标物的背面进行扫描，等离子体溅射包括围绕靶的中心轴线的轨道旋转和围绕目标中心轴线旋转的另一轴线的行星旋转。磁铁组件通过目标中心，从而允许全目标覆盖。相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。带式行星机构包括固定中心绞盘，支撑磁体组件的从动轮和缠绕在其上的带。

5. 发明授权

US07691742B2 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 失效
标题翻译：使用钽前体TAIMATA的含钽材料的原子层沉积
公开(公告)号：US07691742B2
公开(公告)日：2010-04-06
申请号：US12365310
申请日：2009-02-04
申请人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
发明人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
IPC分类号： H01L21/44 , H01L21/285
CPC分类号： H01L29/495 , C23C16/18 , C23C16/30 , C23C16/45553 , H01L21/28079 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L29/4958 , H01L29/517
摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.
摘要翻译：在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

6. 发明申请

US20100075494A1 INTEGRATION OF ALD TANTALUM NITRIDE FOR COPPER METALLIZATION 有权
标题翻译：用于铜冶金的ALD钽酸盐的整合
公开(公告)号：US20100075494A1
公开(公告)日：2010-03-25
申请号：US12627977
申请日：2009-11-30
申请人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
发明人： Hua Chung , Nirmalya Maity , Jick Yu , Roderick Craig Mosely , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/02063 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871
摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
摘要翻译：提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。通过原子层沉积来沉积氮化钽。从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

7. 发明申请

US20060153973A1 Ruthenium layer formation for copper film deposition 审中-公开
标题翻译：用于铜膜沉积的钌层形成
公开(公告)号：US20060153973A1
公开(公告)日：2006-07-13
申请号：US11336527
申请日：2006-01-20
申请人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
发明人： Mei Chang , Seshadri Ganguli , Nirmalya Maity
IPC分类号： B05D5/12 , C23C28/00 , H05K3/00 , C23C28/02 , B05D3/10
CPC分类号： H01L21/76874 , B82Y30/00 , C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873
摘要： In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.
摘要翻译：在一个实施例中，提供了一种用于在衬底上形成材料的方法，其包括将包含其中形成有通孔的电介质材料的衬底定位在处理室内，在阻挡层沉积过程期间在通孔内和电介质材料上形成阻挡层在钌沉积工艺期间在阻挡层上形成钌层，并且在铜沉积工艺期间用铜材料填充通孔。铜材料可以通过在铜籽晶层上沉积铜体积层来形成。该方法还提供了可以通过原子层沉积工艺（ALD）或物理气相沉积（PVD）工艺形成钌层，并且铜材料可以通过无电化学电镀工艺，电镀工艺，化学蒸气沉积工艺，ALD工艺和/或PVD工艺。

8. 发明申请

US20050009325A1 Atomic layer deposition of barrier materials 失效
标题翻译：阻隔材料的原子层沉积
公开(公告)号：US20050009325A1
公开(公告)日：2005-01-13
申请号：US10871864
申请日：2004-06-18
申请人： Hua Chung , Rongjun Wang , Nirmalya Maity
发明人： Hua Chung , Rongjun Wang , Nirmalya Maity
IPC分类号： C23C16/02 , C23C16/14 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76876
摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
摘要翻译：提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

9. 发明授权

US07241686B2 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 有权
标题翻译：使用钽前体TAIMATA的含钽材料的原子层沉积
公开(公告)号：US07241686B2
公开(公告)日：2007-07-10
申请号：US11061039
申请日：2005-02-19
申请人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
发明人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
IPC分类号： H01L21/44 , H01L21/07
CPC分类号： H01L29/495 , C23C16/18 , C23C16/30 , C23C16/45553 , H01L21/28079 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L29/4958 , H01L29/517
摘要： In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.
摘要翻译：在本发明的一个实例中，提供了一种用于在处理室中的衬底上沉积含钽材料的方法，其包括将衬底暴露于含有TAIMATA的钽前体和至少一种次级前体以沉积含钽的材料在原子层沉积（ALD）过程中。重复ALD工艺，直到含有预定厚度的含钽材料沉积。通常，在将钽前体脉冲进入处理室之前，将TAIMATA预热。随后，诸如钨或铜的金属层可以沉积在含钽材料上。含钽材料可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。含钽材料可以作为阻挡层或粘合层沉积在源极/漏极器件内的通孔内或栅极电极材料中。

10. 发明申请

US20070102284A1 Small Scanned Magentron 有权
标题翻译：小扫描魔术师
公开(公告)号：US20070102284A1
公开(公告)日：2007-05-10
申请号：US11610849
申请日：2006-12-14
申请人： Ilyoung HONG , James TSUNG , Daniel LUBBEN , Peijun DING , Nirmalya MAITY
发明人： Ilyoung HONG , James TSUNG , Daniel LUBBEN , Peijun DING , Nirmalya MAITY
IPC分类号： C23C14/00
CPC分类号： H01J37/3455 , C23C14/345 , C23C14/35 , C23C14/355 , H01J37/3405 , H01J37/3408
摘要： A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.
摘要翻译：具有面积小于目标区域的10％的磁体组件的小型磁体组件沿着包括围绕靶的中心轴线的轨道旋转的等离子体溅射的靶的背面以逆行星行星或行星路径扫描，围绕围绕目标中心轴线旋转的另一轴线的行星旋转。磁铁组件通过目标中心，从而允许全目标覆盖。相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。

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