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1. 外观设计

USD914424S1 Drinking straw 有权
公开(公告)号：USD914424S1
公开(公告)日：2021-03-30
申请号：US29701738
申请日：2019-08-14
申请人： Yu-Mei Chang , Cheng-Hui Huang
设计人： Yu-Mei Chang , Cheng-Hui Huang

2. 发明授权

US10593539B2 Support assembly 有权
公开(公告)号：US10593539B2
公开(公告)日：2020-03-17
申请号：US13457421
申请日：2012-04-26
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： B23K10/00 , H01L21/02 , H01J37/32 , H01L21/67 , C23C14/54 , C23C14/50 , C23C14/02
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

3. 发明授权

US09418890B2 Method for tuning a deposition rate during an atomic layer deposition process 有权
标题翻译：在原子层沉积过程中调整沉积速率的方法
公开(公告)号：US09418890B2
公开(公告)日：2016-08-16
申请号：US14279260
申请日：2014-05-15
申请人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
发明人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
IPC分类号： H01L21/768 , C23C16/455 , C23C16/52
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

4. 发明申请

US20160194056A1 SHIP STRUCTURE 审中-公开
标题翻译：船舶结构
公开(公告)号：US20160194056A1
公开(公告)日：2016-07-07
申请号：US14590162
申请日：2015-01-06
申请人： HSIAO-MEI CHANG
发明人： HSIAO-MEI CHANG
IPC分类号： B63B7/06 , B63H5/07 , B63H1/14 , B63B3/04 , B63B3/12
CPC分类号： B63B3/04 , B63B7/08 , B63B2701/00
摘要： A ship structure includes a ship hull formed of independently inflatable left and right garboard strakes, left and right side strakes, a floor plate and upper stretcher plates connected between the left and right side strakes, a portable box arranged at the rear side of the ship hull, a drive unit steering control motor mounted at a mount of the portable box, a rotary wheel supported on the mount of the portable box and rotatable by the drive unit steering control motor, a drive unit supported on the rotary wheel, a propeller suspending outside of the ship hull and rotatable by the drive unit to propel the ship hull on water.
摘要翻译：船体结构包括由独立充气的左右舷梯板条，左右侧板条，底板和连接在左右侧板之间的上部担架板形成的船体，设在船舶后侧的便携式箱体船体，安装在便携式箱体的支架上的驱动单元转向控制马达，支撑在便携式箱体的支架上并由驱动单元转向控制马达可旋转的旋转轮，支撑在旋转轮上的驱动单元，螺旋桨悬挂在船体外部并由驱动单元旋转，以将船体推向水面。

5. 发明授权

US09147578B2 Contact clean by remote plasma and repair of silicide surface 有权
标题翻译：通过远程等离子体接触清洁并修复硅化物表面
公开(公告)号：US09147578B2
公开(公告)日：2015-09-29
申请号：US13004740
申请日：2011-01-11
申请人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
发明人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
IPC分类号： H01L21/00 , H01L21/285 , H01L21/02 , H01L21/28 , H01L21/321 , H01L29/66
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.
摘要翻译：实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。

6. 发明申请

US20140248772A1 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS 有权
标题翻译：在原子层沉积过程中调节沉积速率的方法
公开(公告)号：US20140248772A1
公开(公告)日：2014-09-04
申请号：US14279260
申请日：2014-05-15
申请人： Paul MA , Joseph F. AUBUCHON , Jiang LU , Mei CHANG
发明人： Paul MA , Joseph F. AUBUCHON , Jiang LU , Mei CHANG
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

7. 发明授权

US08815724B2 Process for forming cobalt-containing materials 有权
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08815724B2
公开(公告)日：2014-08-26
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

8. 发明授权

US08777011B2 Capsule package with moisture barrier 有权
标题翻译：胶囊包装防潮
公开(公告)号：US08777011B2
公开(公告)日：2014-07-15
申请号：US10313419
申请日：2002-12-06
申请人： Scot Cheu , William Leung , Mei-Chang Kuo , Andrew Clark
发明人： Scot Cheu , William Leung , Mei-Chang Kuo , Andrew Clark
IPC分类号： B65D83/04
CPC分类号： B65D81/24 , B65D81/2015 , B65D81/2038
摘要： A package for storing an aerosolizable pharmaceutical formulation comprises a capsule adapted to contain the aerosolizable pharmaceutical formulation, and a moisture barrier around the capsule. The moisture barrier comprises a material that is resistant to moisture passage, whereby the moisture barrier reduces the amount of moisture in contact with the aerosolizable pharmaceutical formulation so that the aerosolizable pharmaceutical formulation may be aerosolized when the capsule is opened. In one version, the moisture barrier comprises a metal.
摘要翻译：用于储存可雾化药物制剂的包装包括适于容纳可雾化药物制剂的胶囊和胶囊周围的防潮屏障。防潮层包括耐潮湿通道的材料，由此防潮剂减少与可雾化药物制剂接触的水分量，使得当胶囊打开时可雾化的药物制剂可以雾化。在一个版本中，防潮层包括金属。

9. 发明申请

US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 有权
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：US20140120723A1
公开(公告)日：2014-05-01
申请号：US14062804
申请日：2013-10-24
申请人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

10. 发明申请

US20140112824A1 Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content 有权
标题翻译：包含铝含量高的铝合金薄膜的沉积
公开(公告)号：US20140112824A1
公开(公告)日：2014-04-24
申请号：US14058406
申请日：2013-10-21
申请人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
发明人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
IPC分类号： C23C16/12
CPC分类号： C23C16/30 , C23C16/45531 , C23C16/45534
摘要： Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.
摘要翻译：提供的是包含铝，碳和金属的膜，其中铝以大于约16％的元素含量和小于约50％的碳存在。还提供了沉积它们的方法。

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