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1. 发明授权

US06835696B2 Method of forming a superconductor film 失效
标题翻译：形成超导膜的方法
公开(公告)号：US06835696B2
公开(公告)日：2004-12-28
申请号：US10235788
申请日：2002-09-06
申请人： Atsushi Saito , Akira Kawakami , Hisashi Shimakage , Zhen Wang
发明人： Atsushi Saito , Akira Kawakami , Hisashi Shimakage , Zhen Wang
IPC分类号： C23C1434
CPC分类号： H01L39/2487 , C23C14/067 , C23C14/352 , C23C14/568
摘要： The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is unnecessary.
摘要翻译：本发明提供了形成MgB 2的生长膜的超导体的方法，其分别由同时溅射工艺中的镁靶和硼靶分别由镁和硼制成。由镁和硼的化合物构成的生长膜是没有退火的超导体。本发明可用于制造超导膜的集成电路，因为不需要MgB 2的生长膜的高温退火工艺。

2. 发明授权

US06824655B2 Process for charged particle beam micro-machining of copper 有权
标题翻译：铜的带电粒子束微加工工艺
公开(公告)号：US06824655B2
公开(公告)日：2004-11-30
申请号：US10227745
申请日：2002-08-26
申请人： Vladimir V. Makarov , Javier Fernandez Ruiz , Tzong-Tsong Miau
发明人： Vladimir V. Makarov , Javier Fernandez Ruiz , Tzong-Tsong Miau
IPC分类号： C23C1434
CPC分类号： H01L21/32136 , C23F4/00
摘要： A micro-machining process that includes etching a substrate having copper overlying a dielectric layer to a charged particle beam in the presence of an etch assisting agent. The etch assisting agent is selected from the group consisting of ammonia, acetic acid, thiolacetic acid, and combinations thereof.
摘要翻译：一种微加工工艺，其包括在存在蚀刻辅助剂的情况下将具有覆盖介电层的铜的衬底刻蚀成带电粒子束。蚀刻助剂选自氨，乙酸，硫羟乙酸及其组合。

3. 发明授权

US06824653B2 Magnetron with controlled DC power 有权
公开(公告)号：US06824653B2
公开(公告)日：2004-11-30
申请号：US10371463
申请日：2003-02-21
申请人： Yury Oshmyansky , Sergey Mishin , Richard C. Ruby , John D. Larson, III
发明人： Yury Oshmyansky , Sergey Mishin , Richard C. Ruby , John D. Larson, III
IPC分类号： C23C1434
CPC分类号： H01J37/3444 , C23C14/352 , H01J37/3408
摘要： A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.

4. 发明授权

US06808606B2 Method of manufacturing window using ion beam milling of glass substrate(s) 失效
标题翻译：使用玻璃基板的离子束铣削制造窗口的方法
公开(公告)号：US06808606B2
公开(公告)日：2004-10-26
申请号：US10238052
申请日：2002-09-10
申请人： Scott V. Thomsen , Rudolph Hugo Petrmichl , Vijayen S. Veerasamy , Anthony V. Longobardo , Henry A. Luten , David R. Hall, Jr.
发明人： Scott V. Thomsen , Rudolph Hugo Petrmichl , Vijayen S. Veerasamy , Anthony V. Longobardo , Henry A. Luten , David R. Hall, Jr.
IPC分类号： C23C1434
CPC分类号： C03C17/3618 , B05D5/083 , B08B17/06 , B08B17/065 , B32B17/10036 , B32B17/10174 , B32B17/1033 , B32B17/10761 , B32B17/10981 , B60S1/54 , B60S1/58 , C03C3/076 , C03C15/00 , C03C15/02 , C03C17/22 , C03C17/3441 , C03C17/36 , C03C17/3626 , C03C17/3634 , C03C17/3639 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C03C17/42 , C03C19/00 , C03C23/0005 , C03C23/006 , C03C23/0075 , C03C2217/282 , C03C2218/151 , C03C2218/31 , C03C2218/32 , C03C2218/36 , C03C2218/365 , C23C16/26 , Y10T428/24612
摘要： This invention relates to a method of making a window (e.g., vehicle windshield, architectural window, etc.), and the resulting window product. At least one glass substrate of the window is ion beam treated and/or milled prior to application of a coating (e.g., sputter coated coating) over the treated/milled substrate surface and/or prior to heat treatment. As a result, defects in the resulting window and/or haze may be reduced. The ion beam used in certain embodiments may be diffused. In certain embodiments, the ion beam treating and/or milling is carried out using a fluorine (F) inclusive gas(es) and/or argon/oxygen gas(es) at the ion source(s). In certain optional embodiments, F may be subimplanted into to treated/milled glass surface for the purpose of reducing Na migration to the glass surface during heat treatment or thereafter, thereby enabling corrosion and/or stains to be reduced for long periods of time.

5. 发明授权

US06800177B2 Apparatus and method for fabricating carbon thin film 失效
标题翻译：碳薄膜制造装置及方法
公开(公告)号：US06800177B2
公开(公告)日：2004-10-05
申请号：US10369534
申请日：2003-02-21
申请人： Kyung-Ho Shin , Steven Kim
发明人： Kyung-Ho Shin , Steven Kim
IPC分类号： C23C1434
CPC分类号： H01J37/3414 , C23C14/0605 , C23C14/34 , H01J37/34
摘要： An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.
摘要翻译：在本发明中公开了一种用于制造碳薄膜的装置和方法。该装置包括：真空室，其中安装有基板，位于真空室内的溅射靶，面向基板的真空室;位于真空室内的铯供应单元，其形状为屏蔽物至目标周围，并将铯蒸气供应到通过多个开口的溅射靶的表面，以及围绕铯供应单元并将铯供应单元保持在恒定压力的加热丝。

6. 发明授权

US06793784B1 Tube target 失效
标题翻译：管目标
公开(公告)号：US06793784B1
公开(公告)日：2004-09-21
申请号：US09707058
申请日：2000-11-06
申请人： Otto Bach , David Lupton , Hans Bohmeier , Ralf Heck
发明人： Otto Bach , David Lupton , Hans Bohmeier , Ralf Heck
IPC分类号： C23C1434
CPC分类号： H01J37/3423 , B22D13/023 , C23C14/3414 , H01J37/3491
摘要： A tube target for cathode sputtering installations, and a process for producing a cylindrical hollow body for such a tube target and its use. The problem of providing a simple and low-cost process for producing a cylindrical hollow body for a tube target and of providing a cylindrical hollow body with a uniform, fine-grained structure is solved by the cylindrical hollow body being produced by centrifugal casting of a melt.
摘要翻译：用于阴极溅射装置的管靶，以及用于制造这种管靶的圆柱形中空体的方法及其用途。提供用于制造用于管目标的圆柱形空心体和提供具有均匀的细粒结构的圆柱形中空体的简单且低成本的方法的问题通过圆柱形中空体通过离心铸造熔化。

7. 发明授权

US06790776B2 Barrier layer for electroplating processes 有权
标题翻译：电镀工艺的屏障层
公开(公告)号：US06790776B2
公开(公告)日：2004-09-14
申请号：US10016255
申请日：2001-12-10
申请人： Peijun Ding , Tony Chiang , Tse-Yong Yao , Barry Chin
发明人： Peijun Ding , Tony Chiang , Tse-Yong Yao , Barry Chin
IPC分类号： C23C1434
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877
摘要： The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.
摘要翻译：本发明通常提供了一种用于制备用于电化学沉积的表面的方法，其包括在表面上形成高导电阻挡层并在高导电阻挡层上沉积种子层。本发明的另一方面提供一种用于在衬底上填充结构的方法，包括在所述结构的一个或多个表面上沉积高电导阻挡层，在所述阻挡层上沉积晶种层，以及电化学沉积金属以填充所述结构。

8. 发明授权

US06783639B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US06783639B2
公开(公告)日：2004-08-31
申请号：US10052951
申请日：2002-01-17
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

9. 发明授权

US06780794B2 Methods of bonding physical vapor deposition target materials to backing plate materials 失效
标题翻译：将物理气相沉积目标材料粘合到背板材料上的方法
公开(公告)号：US06780794B2
公开(公告)日：2004-08-24
申请号：US09488973
申请日：2000-01-20
申请人： Chris Parfeniuk , Tony Beier
发明人： Chris Parfeniuk , Tony Beier
IPC分类号： C23C1434
CPC分类号： C23C14/3414 , C23C14/3407 , Y10T428/1275 , Y10T428/24545 , Y10T428/24554
摘要： The invention encompasses a method of bonding a first mass to a second mass. A first mass of first material and a second mass of second material are provided and joined in physical contact with one another. The first and second masses are then diffusion bonded to one another simultaneously with the development of grains of the second material in the second mass. The diffusion bonding comprises solid state diffusion between the first mass and the second mass. A predominate portion of the developed grains in the second material have a maximum dimension of less than 100 microns. The invention also encompasses methods of forming a physical vapor deposition target bonded to a backing plate.
摘要翻译：本发明包括将第一质量块结合到第二质量块的方法。第一材料的第一质量和第二材料的第二质量被提供并且彼此物理接触接合。然后第一和第二质量块彼此扩散接合，同时第二物质中的第二材料的颗粒的形成。扩散接合包括在第一质量块和第二质量块之间的固态扩散。第二种材料中显影颗粒的主要部分的最大尺寸小于100微米。本发明还包括形成结合到背板的物理气相沉积靶的方法。

10. 发明授权

US06780295B2 Method for making Ni-Si magnetron sputtering targets and targets made thereby 有权
标题翻译：由此制造Ni-Si磁控溅射靶和靶的方法
公开(公告)号：US06780295B2
公开(公告)日：2004-08-24
申请号：US10158293
申请日：2002-05-30
申请人： Eugene Y. Ivanvov
发明人： Eugene Y. Ivanvov
IPC分类号： C23C1434
CPC分类号： C22C19/03 , B21B1/38 , B21B3/02 , C22F1/10 , C23C14/3414
摘要： A method for making a nickel/silicon sputter target, targets made thereby and sputtering processes using such targets. The method includes the step of blending molten nickel with sufficient molten silicon so that the blend may be cast to form an alloy containing no less than 4.5 wt % silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in a conventional magnetron sputter process; that is, one can be positioned near a cathode in the presence of an electric potential difference and a magnetic field so as to induce sputtering of nickel ion from the sputter target onto the substrate.
摘要翻译：制造镍/硅溅射靶的方法，由此制成的靶和使用这种靶的溅射工艺。该方法包括将熔融镍与足够的熔融硅共混的步骤，以使该共混物可以铸造以形成含有不少于4.5wt％硅的合金。优选地，通过将铸造锭轧制以形成具有期望厚度的板来成形铸锭。如此形成的溅射靶能够用于传统的磁控溅射工艺; 也就是说，可以在存在电位差和磁场的情况下将其定位在阴极附近，以便将镍离子从溅射靶溅射到衬底上。

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