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1. 发明公开

KR20120088613A Semiconductor substrate, semiconductor device, and manufacturing methods thereof 审中-公开
标题翻译：半导体基板，半导体器件及其制造方法
公开(公告)号：KR20120088613A
公开(公告)日：2012-08-08
申请号：KR20120051939
申请日：2012-05-16
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SAKAI SHIRO
IPC分类号： H01L33/22 , H01L33/02 , H01L33/12 , H01L33/20
CPC分类号： H01L33/02 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/02664 , H01L33/0075 , H01L33/20 , H01L2933/0008
摘要： PURPOSE: A semiconductor substrate, a semiconductor device and a manufacturing method thereof are provided to increase lifetime of a laser diode by forming the laser diode on a GaN layer with enhanced heat conductivity. CONSTITUTION: A first GaN layer(102) is formed on a sapphire substrate(101). A Ta layer(103) is formed on the first GaN layer. A second GaN layer(104) is formed on the first GaN layer. A plurality of cavities(102a) is formed by etching the first GaN layer. A plurality of holes(103a) is formed by etching the Ta layer.
摘要翻译：目的：提供半导体衬底，半导体器件及其制造方法，以通过在具有增强的导热性的GaN层上形成激光二极管来增加激光二极管的寿命。构成：在蓝宝石衬底（101）上形成第一GaN层（102）。在第一GaN层上形成Ta层（103）。在第一GaN层上形成第二GaN层（104）。通过蚀刻第一GaN层形成多个空腔（102a）。通过蚀刻Ta层形成多个孔（103a）。

2. 发明公开

KR20120048330A A light emitting diode assembly and method for fabricating the same 有权
标题翻译：发光二极管组件及其制造方法
公开(公告)号：KR20120048330A
公开(公告)日：2012-05-15
申请号：KR20100109918
申请日：2010-11-05
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE KYU HO , SUH DAE WOONG , CHOI JAE RYANG , KIM CHANG HOON
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L24/17 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/46 , H01L2924/01029 , H01L2924/12036 , H01L2924/12041 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： PURPOSE: A light emitting diode assembly and a manufacturing method thereof are provided to minimize a bad effect due to heat of a light emitting diode chip by effectively conducting the heat to a sub-mount through a bump. CONSTITUTION: A light emitting diode(120) is formed on a first substrate(110). The light emitting diode comprises an n-type semiconductor layer(122) and a p-type semiconductor layer(124). Bumps(130) are formed on the light emitting diode. The bump comprises a first region consisting of Au alloy including Sn, and a second region consisting of Au. The bump comprises a third region between the first region and the second region. A pad(138) is formed between the bumps and the semiconductor layers. An electrode pad(150) is formed on a second substrate(140).
摘要翻译：目的：提供发光二极管组件及其制造方法，以通过有效地通过凸块将热量传导到副安装座，以最小化由于发光二极管芯片的热量引起的不良影响。构成：在第一基板（110）上形成发光二极管（120）。发光二极管包括n型半导体层（122）和p型半导体层（124）。在发光二极管上形成凸起（130）。凸块包括由包括Sn的Au合金构成的第一区域和由Au构成的第二区域。凸块包括在第一区域和第二区域之间的第三区域。在凸块和半导体层之间形成焊盘（138）。在第二基板（140）上形成电极焊盘（150）。

3. 发明公开

KR20120031343A Wafer-level light emitting diode package having plurality of light emitting cells and method of fabricating the same 有权
标题翻译：具有多个发光单元的水平发光二极管封装及其制造方法
公开(公告)号：KR20120031343A
公开(公告)日：2012-04-03
申请号：KR20100092808
申请日：2010-09-24
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SEO WON CHEOL , KAL DAE SUNG
IPC分类号： H01L33/62 , H01L33/44 , H01L33/48
CPC分类号： H01L27/15
摘要： PURPOSE: A wafer level light emitting diode package having a plurality of light emitting cells is provided to improve the extraction efficiency of light generated from an active layer by forming a rough surface on an upper side of a top semiconductor layer. CONSTITUTION: A plurality of light emitting cells(S1, S2) comprises a first conductive top semiconductor layer(25), an active layer(27), and a second conductive bottom semiconductor layer(29). A plurality of contact holes exposes the first conductive top semiconductor layer through the second conductive bottom semiconductor layer and the active layer. A connection part(39c) electrically serially connects adjacent two light emitting cells. A first bump(45a) is electrically connected to the first conductive top semiconductor layer. A second bump(45b) is electrically connected to the second conductive bottom semiconductor layer.
摘要翻译：目的：提供具有多个发光单元的晶片级发光二极管封装，以通过在顶部半导体层的上侧形成粗糙表面来提高从有源层产生的光的提取效率。构成：多个发光单元（S1，S2）包括第一导电顶部半导体层（25），有源层（27）和第二导电底部半导体层（29）。多个接触孔通过第二导电底部半导体层和有源层暴露第一导电顶部半导体层。连接部分（39c）串联连接相邻的两个发光单元。第一凸起（45a）电连接到第一导电顶部半导体层。第二凸起（45b）电连接到第二导电底部半导体层。

4. 发明公开

KR20120002130A Flip-chip light-emitting device and method of manufacturing the same 审中-公开
标题翻译：闪光灯发光装置及其制造方法
公开(公告)号：KR20120002130A
公开(公告)日：2012-01-05
申请号：KR20100062863
申请日：2010-06-30
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE KYU HO , YOON YEO JIN , KIM KYOUNG WAN , CHOI JAE RYANG
IPC分类号： H01L33/10 , H01L33/44
CPC分类号： H01L33/46 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32
摘要： PURPOSE: A flip-chip light-emitting device and a method of manufacturing the same are provided to improve the optical extraction efficiency of a light emitting device by reflecting light circulating inside the light emitting device outside. CONSTITUTION: In a flip-chip light-emitting device and a method of manufacturing the same, an N type semiconductor layer(1210), an active layer(1230), and a p-type semiconductor layer(1250) are formed on a transparent substrate(1100). A transparent electrode layer(1510) is formed on the p-type semiconductor layer. A P-type electrode pad(1550) is formed on the transparent electrode layer. An insulating layer(1390) is formed between the P-type electrode pad and n type electrode pads(1310,1330). Under bump metals(1410,1430,1450) are formed on the N type electrode and the P-type electrode pad.
摘要翻译：目的：提供一种倒装芯片发光器件及其制造方法，以通过将发光器件内部循环的光反射到外部来提高发光器件的光学提取效率。构成：在倒装芯片的发光装置及其制造方法中，在透明的（透明的）形成有N型半导体层（1210），有源层（1230）和p型半导体层（1250）衬底（1100）。在p型半导体层上形成透明电极层（1510）。在透明电极层上形成P型电极焊盘（1550）。在P型电极焊盘和n型电极焊盘之间形成绝缘层（1390）（1310,1330）。在N型电极和P型电极焊盘上形成凹凸金属（1410,1430,1450）。

5. 发明公开

KR20100079843A Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same 有权
标题翻译：具有非极性发光电池的多重性的发光装置及其制造方法
公开(公告)号：KR20100079843A
公开(公告)日：2010-07-08
申请号：KR20080138422
申请日：2008-12-31
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SEO WON CHEOL , KIM KWANG JOONG , YE KYUNG HEE
IPC分类号： H01L33/16
CPC分类号： H01L33/007 , H01L27/156
摘要： PURPOSE: While dividing light emitting cells, the emitting device having a plurality of non-polar light emitting cells and the method for manufacturing that prevent the exposure of metal. Inside of the light emitting cell the electrical short by the metal etching by-product is prevented. CONSTITUTION: A first substrate(21) of sapphire having the top surface is the r side, and the side or the m side or the silicon carbide is prepared. The first substrate comprises the growth prevention pattern(23) and recess region of the stripe shape having the opening. The nitride semiconductor layer is formed in the top of the substrate having recess region. Nitride semiconductor layers are patterned and light emitting cells which each other separate are formed. Nitride semiconductor layers comprises the first electrical conduction semiconductor layer(25), and the active layer(27) and the second electrical conduction semiconductor layer.
摘要翻译：目的：在分配发光单元的同时，具有多个非极性发光单元的发光器件和防止金属暴露的制造方法。在发光单元的内部，防止金属蚀刻副产物的电短路。构成：具有顶表面的蓝宝石的第一衬底（21）是r侧，并且制备侧面或m侧或碳化硅。第一衬底包括生长防止图案（23）和具有开口的条纹形状的凹部区域。氮化物半导体层形成在具有凹陷区域的衬底的顶部。形成氮化物半导体层，并形成彼此分开的发光单元。氮化物半导体层包括第一导电半导体层（25）和有源层（27）和第二导电半导体层。

6. 发明公开

KR20100079692A Light emitting diode having electrostatic discharge protect function and method of fabricating the same 审中-公开
标题翻译：具有静电放电防护功能的发光二极管及其制造方法
公开(公告)号：KR20100079692A
公开(公告)日：2010-07-08
申请号：KR20080138237
申请日：2008-12-31
申请人： SEOUL OPTO DEVICE CO LTD
发明人： JIN HEE CHANG
IPC分类号： H01L33/62 , H01L23/60 , H01L27/04
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to electrically protect the light emitting diode from a surge, an over voltage, and static electricity by preventing a current from being inputted to a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. CONSTITUTION: An undoped nitride semiconductor layer(53) is formed on a substrate. A compound semiconductor layer comprises a first conductive semiconductor layer, an active layer(57), and the second conductive semiconductor layer formed on the undoped nitride semiconductor layer. A first electrode and a second electrode are formed on the first and second conductive semiconductor layers. The first electrode is electrically connected to the undoped nitride semiconductor layer. The second electrode is electrically connected to the undoped nitride semiconductor layer.
摘要翻译：目的：提供一种发光二极管及其制造方法，通过防止电流被输入到第一导电半导体层，有源层和有源层，从而电流保护发光二极管免受浪涌，过电压和静电第二导电半导体层。构成：在衬底上形成未掺杂的氮化物半导体层（53）。化合物半导体层包括第一导电半导体层，有源层（57）和形成在未掺杂氮化物半导体层上的第二导电半导体层。第一电极和第二电极形成在第一和第二导电半导体层上。第一电极电连接到未掺杂的氮化物半导体层。第二电极电连接到未掺杂的氮化物半导体层。

7. 发明公开

KR20100068359A Gan-based compound semiconductor 有权
标题翻译：基于GAN的化合物半导体
公开(公告)号：KR20100068359A
公开(公告)日：2010-06-23
申请号：KR20100053934
申请日：2010-06-08
申请人： SEOUL OPTO DEVICE CO LTD
发明人： NAM KI BUM
IPC分类号： H01L33/14 , H01L33/36
CPC分类号： H01L33/32 , H01L33/04 , H01L33/30 , H01L33/42
摘要： PURPOSE: A gallium nitride-based compound semiconductor is provided to decrease contact resistance by improving a tunneling transport using an InAlGaN contact layer. CONSTITUTION: An n-type GaN layer(400) is formed on a substrate(100). An active layer(500) is formed on the n-type GaN layer. A p-type GaN layer(600) is formed on the active layer. A contact layer(700) is formed on the p-type GaN layer. A transparent electrode(800) formed on the contact layer is formed. An electrode pad(900a) is formed on the transparent electrode.
摘要翻译：目的：通过改善使用InAlGaN接触层的隧道传输来提供氮化镓基化合物半导体以降低接触电阻。构成：在衬底（100）上形成n型GaN层（400）。在n型GaN层上形成有源层（500）。在有源层上形成p型GaN层（600）。在p型GaN层上形成接触层（700）。形成在接触层上的透明电极（800）。在透明电极上形成电极焊盘（900a）。

8. 发明公开

KR20090060271A LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING 审中-公开
标题翻译：具有电流扩展电极的发光二极管
公开(公告)号：KR20090060271A
公开(公告)日：2009-06-11
申请号：KR20097003347
申请日：2009-02-18
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOON YEO JIN , KIM DAE WON
IPC分类号： H01L33/36
摘要： A light emitting diode is provided to maximize current spreading by arranging bottom extension parts and top extension parts into a rotation symmetry structure. A bottom semiconductor layer(13) is formed on a substrate. A top semiconductor layer is positioned on a top part of the bottom semiconductor layer in order to expose edge regions of the bottom semiconductor layer. The top semiconductor layer has an indentation part(18d). An active layer is interposed between the bottom semiconductor layer and the top semiconductor layer. A bottom electrode(21) is formed on the bottom semiconductor layer exposed of a first edge part of the substrate. A transparent electrode layer(19) is formed on the top semiconductor layer. A top electrode(31) is formed on the transparent electrode layer of a second edge part of the substrate. Bottom extension parts(25d) are extended from the bottom electrode, and are formed on edge regions of the exposed bottom semiconductor layer and regions of the bottom semiconductor layer exposed by the indentation part. Top extension parts are formed on the transparent electrode layer, and are extended from the top electrode.
摘要翻译：提供发光二极管以通过将底部延伸部分和顶部延伸部分布置成旋转对称结构来最大化电流扩展。底部半导体层（13）形成在基板上。顶部半导体层位于底部半导体层的顶部以便露出底部半导体层的边缘区域。顶部半导体层具有压痕部分（18d）。在底部半导体层和顶部半导体层之间插入有源层。底部电极（21）形成在衬底的第一边缘部分露出的底部半导体层上。在顶部半导体层上形成透明电极层（19）。在基板的第二边缘部分的透明电极层上形成顶部电极（31）。底部延伸部分（25d）从底部电极延伸，并且形成在暴露的底部半导体层的边缘区域和由凹陷部分露出的底部半导体层的区域。顶部延伸部分形成在透明电极层上，并从顶部电极延伸。

9. 发明公开

KR20120032779A High efficiency light emitting diode and method of fabricating the same 有权
标题翻译：高效发光二极管及其制造方法
公开(公告)号：KR20120032779A
公开(公告)日：2012-04-06
申请号：KR20100094298
申请日：2010-09-29
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM CHANG YOUN , KIM DA HYE
IPC分类号： H01L33/36 , H01L33/02 , H01L33/22
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L2933/0008
摘要： PURPOSE: A high efficiency light emitting diode and a manufacturing method thereof are provided to effectively alleviate stress between processes due to differences between thermal expansion coefficients of a support substrate, a semiconductor stacked structure, and a growth substrate, thereby suppressing bending and damage of a compound semiconductor layer. CONSTITUTION: A support substrate(60) includes second metal layers(62,66) which are symmetrically arranged on upper and lower sides of a first metal layer(64). A semiconductor stacked structure(30) is located on the support substrate. The semiconductor stacked structure comprises a p-type compound semiconductor layer(29), an active layer(27), and an n-type compound semiconductor layer(25). An p-type electrode(31,35) is located between the p-type compound semiconductor layer and the support substrate. An upper insulating layer(47) is located between an n-type electrode pad and the semiconductor stacked structure.
摘要翻译：目的：提供高效率的发光二极管及其制造方法，以有效地缓解由于支撑基板，半导体堆叠结构和生长基板的热膨胀系数之间的差异导致的工艺之间的应力，从而抑制了弯曲和损坏化合物半导体层。构成：支撑基板（60）包括对称地布置在第一金属层（64）的上侧和下侧上的第二金属层（62,66）。半导体堆叠结构（30）位于支撑基板上。半导体堆叠结构包括p型化合物半导体层（29），有源层（27）和n型化合物半导体层（25）。 p型电极（31,35）位于p型化合物半导体层和支撑基板之间。上绝缘层（47）位于n型电极焊盘和半导体堆叠结构之间。

10. 发明公开

KR20120032778A High efficiency light emitting device and method for fabricating the same 有权
标题翻译：高效发光装置及其制造方法
公开(公告)号：KR20120032778A
公开(公告)日：2012-04-06
申请号：KR20100094297
申请日：2010-09-29
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LIM HONG CHOL , KIM CHANG YOUN , YIN JUN HO
IPC分类号： H01L33/22 , H01L33/02
CPC分类号： H01L33/22 , H01L33/007 , H01L33/12 , H01L2933/0091
摘要： PURPOSE: A high efficiency light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by forming an uneven surface in which an additional cone is formed on an uneven pattern. CONSTITUTION: A semiconductor stacked structure is located on a support substrate(190). The semiconductor stacked structure includes a p-type compound semiconductor layer(150), an active layer(140), and an n-type compound semiconductor layer(130). A bonding metal(180) combines the semiconductor stacked structure and the support substrate. A protective metal(170) and a contact metal layer(160) are formed between the bonding metal and the semiconductor stacked structure. An n-type electrode(200) is formed on the n-type compound semiconductor layer.
摘要翻译：目的：提供一种高效率发光器件及其制造方法，以通过在不均匀图案上形成附加锥体的不平坦表面来提高光提取效率。构成：半导体堆叠结构位于支撑衬底（190）上。半导体堆叠结构包括p型化合物半导体层（150），有源层（140）和n型化合物半导体层（130）。接合金属（180）将半导体层叠结构和支撑基板组合。在接合金属和半导体堆叠结构之间形成保护金属（170）和接触金属层（160）。 n型电极（200）形成在n型化合物半导体层上。

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