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1. 发明公开

KR20120002130A Flip-chip light-emitting device and method of manufacturing the same 审中-公开
标题翻译：闪光灯发光装置及其制造方法
公开(公告)号：KR20120002130A
公开(公告)日：2012-01-05
申请号：KR20100062863
申请日：2010-06-30
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE KYU HO , YOON YEO JIN , KIM KYOUNG WAN , CHOI JAE RYANG
IPC分类号： H01L33/10 , H01L33/44
CPC分类号： H01L33/46 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32
摘要： PURPOSE: A flip-chip light-emitting device and a method of manufacturing the same are provided to improve the optical extraction efficiency of a light emitting device by reflecting light circulating inside the light emitting device outside. CONSTITUTION: In a flip-chip light-emitting device and a method of manufacturing the same, an N type semiconductor layer(1210), an active layer(1230), and a p-type semiconductor layer(1250) are formed on a transparent substrate(1100). A transparent electrode layer(1510) is formed on the p-type semiconductor layer. A P-type electrode pad(1550) is formed on the transparent electrode layer. An insulating layer(1390) is formed between the P-type electrode pad and n type electrode pads(1310,1330). Under bump metals(1410,1430,1450) are formed on the N type electrode and the P-type electrode pad.
摘要翻译：目的：提供一种倒装芯片发光器件及其制造方法，以通过将发光器件内部循环的光反射到外部来提高发光器件的光学提取效率。构成：在倒装芯片的发光装置及其制造方法中，在透明的（透明的）形成有N型半导体层（1210），有源层（1230）和p型半导体层（1250）衬底（1100）。在p型半导体层上形成透明电极层（1510）。在透明电极层上形成P型电极焊盘（1550）。在P型电极焊盘和n型电极焊盘之间形成绝缘层（1390）（1310,1330）。在N型电极和P型电极焊盘上形成凹凸金属（1410,1430,1450）。

2. 发明公开

KR20120019897A Light emitting diode with improved luminous efficiency 有权
标题翻译：发光二极管具有提高的光效
公开(公告)号：KR20120019897A
公开(公告)日：2012-03-07
申请号：KR20100083480
申请日：2010-08-27
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , SUH DUK IL , LEE KEUM JU , LEE JIN WOONG , JEONG DA YEON
IPC分类号： H01L33/36 , H01L33/38 , H01L33/42
CPC分类号： H01L33/42 , H01L33/22 , H01L33/382 , H01L33/58
摘要： PURPOSE: A light emitting diode with improved light emitting efficiency is provided to improve light emitting efficiency through a transparent electrode layer by selecting the transparent electrode layer which includes an indented part and a protruded part. CONSTITUTION: A substrate comprises a first side edge(E1) and a second side edge(E2) which are facing each other. A light emitting structure comprises a first conductivity type lower semiconductor layer(23), an active layer, and a second conductivity type upper semiconductor layer. A transparent electrode layer is arranged on the second conductivity type upper semiconductor layer. A first electrode pad(41) is arranged near the center of the first side edge. A second electrode pad(51) is arranged on both end parts of the second side edge.
摘要翻译：目的：提供一种发光效率提高的发光二极管，通过选择包括缩进部分和突出部分的透明电极层，通过透明电极层提高发光效率。构成：基板包括彼此面对的第一侧边缘（E1）和第二侧边缘（E2）。发光结构包括第一导电型下半导体层（23），有源层和第二导电型上半导体层。透明电极层设置在第二导电型上半导体层上。第一电极焊盘（41）布置在第一侧边缘的中心附近。第二电极焊盘（51）布置在第二侧边缘的两个端部上。

3. 发明授权

KR101106138B1 Light emitting diode with improved luminous efficiency and method for fabricating the same 有权
标题翻译：具有改进的发光效率的发光二极管及其制造方法
公开(公告)号：KR101106138B1
公开(公告)日：2012-01-20
申请号：KR20100096016
申请日：2010-10-01
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM YE SEUL , YOON YEO JIN , KIM KYOUNG WAN , YANG JEONG HEE , OH SANG HYUN , SUH DUK IL
IPC分类号： H01L33/38 , H01L33/58
CPC分类号： H01L33/58 , H01L33/22 , H01L33/38 , H01L33/42
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency by forming micro lenses which cover the concave part after forming a plurality of concave parts. CONSTITUTION: A first conductivity type bottom semiconductor layer(23) is located on a substrate(21). A second conductive type top semiconductor layer(27) is located on the first conductivity type bottom semiconductor layer. An active layer(25) is formed between the first conductivity type bottom semiconductor layer and the second conductive type top semiconductor layer. A transparent electrode layer(69) is located on the second conductive type top semiconductor layer. The transparent electrode layer comprises an unevenness surface consisting of a concave part and a convex part.
摘要翻译：目的：提供发光二极管及其制造方法，通过在形成多个凹部之后形成覆盖凹部的微透镜来提高光提取效率。构成：第一导电型底部半导体层（23）位于衬底（21）上。第二导电型顶部半导体层（27）位于第一导电型底部半导体层上。在第一导电型底部半导体层和第二导电型顶部半导体层之间形成有源层（25）。透明电极层（69）位于第二导电型顶部半导体层上。透明电极层包括由凹部和凸部构成的凹凸面。

4. 发明公开

KR20120015651A Light emitting diode with improved light extraction efficiency 审中-公开
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：KR20120015651A
公开(公告)日：2012-02-22
申请号：KR20100077924
申请日：2010-08-12
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM JAE MOO , LEE KEUM JU
IPC分类号： H01L33/44 , H01L33/00 , H01L33/46
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： PURPOSE: A light emitting diode having improved optical extraction efficiency is provided to prevent a current to be excessively focused on the crystal defect of light emission regions by partitioning a light-emitting structure into a plurality of light emitting regions. CONSTITUTION: A light-emitting structure including light emitting regions(LE1,LE2) is formed in the top of a substrate. The light-emitting structure comprises a first electrical conductive semiconductor layer, an active layer, and a second electrical conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first electrical conductive semiconductor layer. A second electrode pad(33) is located on the upper side of the substrate. An insulation reflecting layer(31) separates the second electrode pad from the light-emitting structure. A pattern(LEE) of optical extraction elements is located on the upper side of the second electrical conductive semiconductor layer.
摘要翻译：目的：提供具有提高的光提取效率的发光二极管，以通过将发光结构分隔成多个发光区域来防止电流过度聚焦于发光区域的晶体缺陷。构成：在衬底的顶部形成包括发光区域（LE1，LE2）的发光结构。发光结构包括第一导电半导体层，有源层和第二导电半导体层。第一电极焊盘（35）电连接到第一导电半导体层。第二电极焊盘（33）位于衬底的上侧。绝缘反射层（31）将第二电极焊盘与发光结构分离。光提取元件的图案（LEE）位于第二导电半导体层的上侧。

5. 发明公开

KR20120014750A Light emitting diode having distributed bragg reflector 有权
标题翻译：具有分布式BRAGG反射器的发光二极管
公开(公告)号：KR20120014750A
公开(公告)日：2012-02-20
申请号：KR20100076914
申请日：2010-08-10
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/22 , H01L33/42 , H01L33/58 , H01L2924/12041 , H01L2933/0016 , H01L2933/0058
摘要： PURPOSE: A light emitting diode having a distributed Bragg reflector is provided to improve the light extraction efficiency of a light emitting diode by forming a top insulating layer and a transparent conductive layer into a refractive index grading layer. CONSTITUTION: A light emitting structure(30) includes an active layer(27). An top insulating layer(37) covers the light emitting structure. A distributed Bragg reflector(40) is arranged at a lower part of a substrate. The distributed Bragg reflector reflects light emitted from the light emitting structure. A metal reflective layer(41) is arranged at the lower part of the distributed Bragg reflector.
摘要翻译：目的：提供一种具有分布布拉格反射器的发光二极管，通过将顶部绝缘层和透明导电层形成折射率分级层来提高发光二极管的光提取效率。构成：发光结构（30）包括有源层（27）。顶部绝缘层（37）覆盖发光结构。分布式布拉格反射器（40）布置在基板的下部。分布式布拉格反射器反射从发光结构发射的光。金属反射层（41）布置在分布布拉格反射器的下部。

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