专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR20120002130A Flip-chip light-emitting device and method of manufacturing the same 审中-公开
标题翻译：闪光灯发光装置及其制造方法
公开(公告)号：KR20120002130A
公开(公告)日：2012-01-05
申请号：KR20100062863
申请日：2010-06-30
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE KYU HO , YOON YEO JIN , KIM KYOUNG WAN , CHOI JAE RYANG
IPC分类号： H01L33/10 , H01L33/44
CPC分类号： H01L33/46 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32
摘要： PURPOSE: A flip-chip light-emitting device and a method of manufacturing the same are provided to improve the optical extraction efficiency of a light emitting device by reflecting light circulating inside the light emitting device outside. CONSTITUTION: In a flip-chip light-emitting device and a method of manufacturing the same, an N type semiconductor layer(1210), an active layer(1230), and a p-type semiconductor layer(1250) are formed on a transparent substrate(1100). A transparent electrode layer(1510) is formed on the p-type semiconductor layer. A P-type electrode pad(1550) is formed on the transparent electrode layer. An insulating layer(1390) is formed between the P-type electrode pad and n type electrode pads(1310,1330). Under bump metals(1410,1430,1450) are formed on the N type electrode and the P-type electrode pad.
摘要翻译：目的：提供一种倒装芯片发光器件及其制造方法，以通过将发光器件内部循环的光反射到外部来提高发光器件的光学提取效率。构成：在倒装芯片的发光装置及其制造方法中，在透明的（透明的）形成有N型半导体层（1210），有源层（1230）和p型半导体层（1250）衬底（1100）。在p型半导体层上形成透明电极层（1510）。在透明电极层上形成P型电极焊盘（1550）。在P型电极焊盘和n型电极焊盘之间形成绝缘层（1390）（1310,1330）。在N型电极和P型电极焊盘上形成凹凸金属（1410,1430,1450）。

2. 发明公开

KR20090060271A LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING 审中-公开
标题翻译：具有电流扩展电极的发光二极管
公开(公告)号：KR20090060271A
公开(公告)日：2009-06-11
申请号：KR20097003347
申请日：2009-02-18
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOON YEO JIN , KIM DAE WON
IPC分类号： H01L33/36
摘要： A light emitting diode is provided to maximize current spreading by arranging bottom extension parts and top extension parts into a rotation symmetry structure. A bottom semiconductor layer(13) is formed on a substrate. A top semiconductor layer is positioned on a top part of the bottom semiconductor layer in order to expose edge regions of the bottom semiconductor layer. The top semiconductor layer has an indentation part(18d). An active layer is interposed between the bottom semiconductor layer and the top semiconductor layer. A bottom electrode(21) is formed on the bottom semiconductor layer exposed of a first edge part of the substrate. A transparent electrode layer(19) is formed on the top semiconductor layer. A top electrode(31) is formed on the transparent electrode layer of a second edge part of the substrate. Bottom extension parts(25d) are extended from the bottom electrode, and are formed on edge regions of the exposed bottom semiconductor layer and regions of the bottom semiconductor layer exposed by the indentation part. Top extension parts are formed on the transparent electrode layer, and are extended from the top electrode.
摘要翻译：提供发光二极管以通过将底部延伸部分和顶部延伸部分布置成旋转对称结构来最大化电流扩展。底部半导体层（13）形成在基板上。顶部半导体层位于底部半导体层的顶部以便露出底部半导体层的边缘区域。顶部半导体层具有压痕部分（18d）。在底部半导体层和顶部半导体层之间插入有源层。底部电极（21）形成在衬底的第一边缘部分露出的底部半导体层上。在顶部半导体层上形成透明电极层（19）。在基板的第二边缘部分的透明电极层上形成顶部电极（31）。底部延伸部分（25d）从底部电极延伸，并且形成在暴露的底部半导体层的边缘区域和由凹陷部分露出的底部半导体层的区域。顶部延伸部分形成在透明电极层上，并从顶部电极延伸。

3. 发明公开

KR20120031207A Light emitting diode and method for fabricating the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：KR20120031207A
公开(公告)日：2012-03-30
申请号：KR20120024512
申请日：2012-03-09
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM CHANG YEON , YOON YEO JIN
IPC分类号： H01L33/62 , H01L33/36
CPC分类号： H01L33/62 , H01L27/156 , H01L33/32 , H01L33/42
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to simplify manufacturing processes by omitting an insulation layer between a wiring layer and a semiconductor layer. CONSTITUTION: A plurality of insulating partitions(72) are formed on a substrate. A plurality of light emitting cells(56) are located between adjacent partitions on the substrate. A connection unit electrically connects the light emitting cells. The plurality of light emitting cells includes a lower semiconductor layer, an active layer(57), and an upper semiconductor layer.
摘要翻译：目的：提供一种发光二极管及其制造方法，以通过省略布线层和半导体层之间的绝缘层来简化制造工艺。构成：在基板上形成多个绝缘隔板（72）。多个发光单元（56）位于基板上的相邻隔板之间。连接单元电连接发光单元。多个发光单元包括下半导体层，有源层（57）和上半导体层。

4. 发明公开

KR20120019897A Light emitting diode with improved luminous efficiency 有权
标题翻译：发光二极管具有提高的光效
公开(公告)号：KR20120019897A
公开(公告)日：2012-03-07
申请号：KR20100083480
申请日：2010-08-27
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , SUH DUK IL , LEE KEUM JU , LEE JIN WOONG , JEONG DA YEON
IPC分类号： H01L33/36 , H01L33/38 , H01L33/42
CPC分类号： H01L33/42 , H01L33/22 , H01L33/382 , H01L33/58
摘要： PURPOSE: A light emitting diode with improved light emitting efficiency is provided to improve light emitting efficiency through a transparent electrode layer by selecting the transparent electrode layer which includes an indented part and a protruded part. CONSTITUTION: A substrate comprises a first side edge(E1) and a second side edge(E2) which are facing each other. A light emitting structure comprises a first conductivity type lower semiconductor layer(23), an active layer, and a second conductivity type upper semiconductor layer. A transparent electrode layer is arranged on the second conductivity type upper semiconductor layer. A first electrode pad(41) is arranged near the center of the first side edge. A second electrode pad(51) is arranged on both end parts of the second side edge.
摘要翻译：目的：提供一种发光效率提高的发光二极管，通过选择包括缩进部分和突出部分的透明电极层，通过透明电极层提高发光效率。构成：基板包括彼此面对的第一侧边缘（E1）和第二侧边缘（E2）。发光结构包括第一导电型下半导体层（23），有源层和第二导电型上半导体层。透明电极层设置在第二导电型上半导体层上。第一电极焊盘（41）布置在第一侧边缘的中心附近。第二电极焊盘（51）布置在第二侧边缘的两个端部上。

5. 发明授权

KR101106138B1 Light emitting diode with improved luminous efficiency and method for fabricating the same 有权
标题翻译：具有改进的发光效率的发光二极管及其制造方法
公开(公告)号：KR101106138B1
公开(公告)日：2012-01-20
申请号：KR20100096016
申请日：2010-10-01
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM YE SEUL , YOON YEO JIN , KIM KYOUNG WAN , YANG JEONG HEE , OH SANG HYUN , SUH DUK IL
IPC分类号： H01L33/38 , H01L33/58
CPC分类号： H01L33/58 , H01L33/22 , H01L33/38 , H01L33/42
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency by forming micro lenses which cover the concave part after forming a plurality of concave parts. CONSTITUTION: A first conductivity type bottom semiconductor layer(23) is located on a substrate(21). A second conductive type top semiconductor layer(27) is located on the first conductivity type bottom semiconductor layer. An active layer(25) is formed between the first conductivity type bottom semiconductor layer and the second conductive type top semiconductor layer. A transparent electrode layer(69) is located on the second conductive type top semiconductor layer. The transparent electrode layer comprises an unevenness surface consisting of a concave part and a convex part.
摘要翻译：目的：提供发光二极管及其制造方法，通过在形成多个凹部之后形成覆盖凹部的微透镜来提高光提取效率。构成：第一导电型底部半导体层（23）位于衬底（21）上。第二导电型顶部半导体层（27）位于第一导电型底部半导体层上。在第一导电型底部半导体层和第二导电型顶部半导体层之间形成有源层（25）。透明电极层（69）位于第二导电型顶部半导体层上。透明电极层包括由凹部和凸部构成的凹凸面。

6. 发明公开

KR20100083112A Luminescence device 审中-公开
标题翻译：发光装置
公开(公告)号：KR20100083112A
公开(公告)日：2010-07-21
申请号：KR20100053822
申请日：2010-06-08
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOON YEO JIN , OH DUCK HWAN
IPC分类号： H01L33/38 , H01L33/42
CPC分类号： H01L33/38 , H01L33/22 , H01L33/405 , H01L33/42
摘要： PURPOSE: A light emitting device is provided to improve light transmittance and light output by forming a mesh type transparent electrode. CONSTITUTION: An N type semiconductor layer(120) is formed on a sapphire substrate(110). An active layer(130) is formed on the N type semiconductor layer. A P-type semiconductor layer(140) is formed on the active layer. A mesh type transparent electrode(150) is formed on the P type semiconductor layer. A P type electrode(170) is formed on the mesh type transparent electrode.
摘要翻译：目的：提供一种发光装置，通过形成网状透明电极来提高透光率和光输出。构成：在蓝宝石衬底（110）上形成N型半导体层（120）。在N型半导体层上形成有源层（130）。在有源层上形成P型半导体层（140）。网状透明电极（150）形成在P型半导体层上。在网状透明电极上形成P型电极（170）。

7. 发明公开

KR20120140228A Light emitting diode with high efficiency and method of manufacturing thereof 审中-公开
标题翻译：具有高效率的发光二极管及其制造方法
公开(公告)号：KR20120140228A
公开(公告)日：2012-12-28
申请号：KR20120134464
申请日：2012-11-26
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SEO WON CHEOL , YOON YEO JIN
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/10 , H01L2933/0083
摘要： PURPOSE: A light emitting diode with high efficiency and a manufacturing method thereof are provided to improve the luminous efficiency of a light emitting diode by minimizing an amount of light which is transmitted to a substrate. CONSTITUTION: A light emitting diode includes a substrate, an n type semiconductor layer(140), an active layer, a p type semiconductor layer(160), and a transparent electrode layer(170). An uneven pattern(120) with a flat upper side is formed on the substrate. The n type semiconductor layer is formed on the upper side of the uneven pattern. A groove part with an incline from the upper side of the uneven pattern is formed.
摘要翻译：目的：提供一种高效率的发光二极管及其制造方法，其通过使发射到基板的光量最小化来提高发光二极管的发光效率。构成：发光二极管包括衬底，n型半导体层（140），有源层，p型半导体层（160）和透明电极层（170）。在基板上形成具有平坦上侧的凹凸图案（120）。 n型半导体层形成在不均匀图案的上侧。形成从凹凸图案的上侧倾斜的槽部。

8. 发明公开

KR20120048331A Light emitting diode chip and method of fabricating the same 审中-公开
标题翻译：发光二极管芯片及其制造方法
公开(公告)号：KR20120048331A
公开(公告)日：2012-05-15
申请号：KR20100109919
申请日：2010-11-05
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SEO WON CHEOL , YOON YEO JIN
IPC分类号： H01L33/00
摘要： PURPOSE: A light emitting diode chip and a manufacturing method thereof are provided to minimize loss of a light emission region due to a separation region of light emitting cells by minimizing a cell separation region between the light emitting cells. CONSTITUTION: A buffer layer(112) is formed on one-side of a substrate(110). A semiconductor structure(120) comprises a first conductivity type semiconductor layer(122), an active layer(124), and a second conductivity type semiconductor layer(126). The first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are divided into a plurality of light emitting cells(140) by a cell separation region. The cell separation region comprises a groove region(132) and a gap region(134). The groove region divides the first conductivity type semiconductor layer and the active layer.
摘要翻译：目的：提供发光二极管芯片及其制造方法，以通过使发光单元之间的细胞分离区域最小化来最小化由于发光单元的分离区域引起的发光区域的损失。构成：在衬底（110）的一侧上形成缓冲层（112）。半导体结构（120）包括第一导电类型半导体层（122），有源层（124）和第二导电类型半导体层（126）。第一导电类型半导体层，有源层和第二导电类型半导体层被细胞分离区分成多个发光单元（140）。细胞分离区域包括沟槽区域（132）和间隙区域（134）。沟槽区域分割第一导电类型半导体层和有源层。

9. 发明公开

KR20100083111A Luminescence device 有权
标题翻译：发光装置
公开(公告)号：KR20100083111A
公开(公告)日：2010-07-21
申请号：KR20100053820
申请日：2010-06-08
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOON YEO JIN , OH DUCK HWAN
IPC分类号： H01L33/38 , H01L33/42
CPC分类号： H01L33/38 , H01L33/22 , H01L33/42
摘要： PURPOSE: A light emitting device is provided to improve the external quantum efficiency of the light emitting device by forming a concavo-convex part with preset roughness on the surface of an N type semiconductor layer. CONSTITUTION: An N type semiconductor layer(120) is formed on a sapphire substrate(110). An active layer(130) is formed on the N type semiconductor layer. A P type semiconductor layer(140) is formed on the active layer. A transparent electrode layer(150) is formed on the P type semiconductor layer. A concavo-convex part is formed on the substrate of the transparent electrode layer.
摘要翻译：目的：提供一种发光器件，通过在N型半导体层的表面上形成具有预设粗糙度的凹凸部来提高发光器件的外部量子效率。构成：在蓝宝石衬底（110）上形成N型半导体层（120）。在N型半导体层上形成有源层（130）。在活性层上形成P型半导体层（140）。在P型半导体层上形成透明电极层（150）。在透明电极层的基板上形成凹凸部。

10. 发明公开

KR20100054172A Light emitting device module for ac power operation 有权
标题翻译：用于交流电源运行的发光装置模块
公开(公告)号：KR20100054172A
公开(公告)日：2010-05-25
申请号：KR20080108172
申请日：2008-11-03
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE CHUNG HOON , KAL DAE SUNG , KIM DAE WON , YE KYUNG HEE , YOON YEO JIN
IPC分类号： H01L33/58
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PURPOSE: A light emitting module for AC is provided to alleviate flicker effect without an additional circuit for delaying an AC signal. CONSTITUTION: An LED module(100) for AC includes a first light emitting device(10a) and a second light emitting device(10b). The first and second light emitting devices includes a light emitting diode chip(20a) with a plurality of light emitting cells on a single substrate(30) and a delay phosphor(21a) for changing the wavelength of light emitted from the light emitting diode chip. The second light emitting device has higher afterglow brightness by the delay phosphor than that of the first light emitting device.
摘要翻译：目的：提供用于AC的发光模块以减轻闪烁效应，而不需要用于延迟AC信号的附加电路。构成：用于AC的LED模块（100）包括第一发光装置（10a）和第二发光装置（10b）。第一和第二发光器件包括在单个衬底（30）上具有多个发光单元的发光二极管芯片（20a）和用于改变从发光二极管芯片发射的光的波长的延迟荧光体（21a）。第二发光器件具有比第一发光器件的延迟荧光体更高的余辉亮度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式