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1. 发明专利

JP6274224B2 光半導体素子及びその製造方法有权
公开(公告)号：JP6274224B2
公开(公告)日：2018-02-07
申请号：JP2015556693
申请日：2014-01-10
申请人：富士通株式会社
发明人：高林和雅 , 山本剛之 , 木村徳治
IPC分类号： H01S5/343
CPC分类号： H01S5/341 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/20 , H01S5/204 , H01S5/22 , H01S5/222 , H01S5/3013 , H01S5/3412

2. 发明专利

JP2017208545A 半導体チップ、および半導体チップの製造方法审中-公开
公开(公告)号：JP2017208545A
公开(公告)日：2017-11-24
申请号：JP2017095649
申请日：2017-05-12
申请人：オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツング , Osram Opto Semiconductors GmbH
发明人：アルフレートレル , アンドレアスレフラー , クリストフアイヒラー , ベアンハートシュトイェッツ , アンドレゾーマース
IPC分类号： H01S5/22 , H01S5/30 , H01L33/32 , H01L21/205 , C30B29/38 , H01S5/323
CPC分类号： H01L33/0025 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/26 , H01L33/62 , H01S5/1082 , H01S5/2219 , H01S5/222 , H01S5/3205 , H01S5/4031 , H01L33/32 , H01S2301/176 , H01S2301/18 , H01S5/026 , H01S5/2036 , H01S5/227 , H01S5/32341
摘要：【課題】半導体チップを開示する。【解決手段】第1の半導体層1を備えた半導体チップ100であって、第1の半導体層1は、導波路層および/または活性層であって、横方向に隣り合って配置され、かつ材料組成の異なる領域11,12を備え、領域11のインジウム含有率は、横方向に隣り合った領域12より高いので、領域12の屈折率は領域11より低く、かつ領域12のバンドギャップは領域11より大きく、したがって、レーザストライプ部を成す領域11は、両隣の領域12よりバンドギャップが小さいことにより、両隣の領域12より相応に長い波長の領域となり、このような屈折率およびバンドギャップの相違により、半導体チップの動作中には、活性層のレーザストライプ部において生成された光の屈折率導波を達成する。【選択図】図2A

3. 发明专利

JP2014057113A Radiation-emitting semiconductor chip 审中-公开
标题翻译：辐射发射半导体芯片
公开(公告)号：JP2014057113A
公开(公告)日：2014-03-27
申请号：JP2013269316
申请日：2013-12-26
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
IPC分类号： H01S5/22 , H01L33/44
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a radiation-emitting semiconductor chip with an improved light extraction efficiency.SOLUTION: The invention relates to a radiation-emitting semiconductor chip (1), comprising an active zone (2) for generating radiation having a wavelength λ and a patterned region (3) having irregularly arranged pattern elements. The pattern elements contain a first material having a first refractive index n, and are surrounded by a medium comprising a second material having a second refractive index n. The invention relates to a method for producing the radiation-emitting semiconductor chip.
摘要翻译：要解决的问题：提供具有改进的光提取效率的辐射发射半导体芯片。解决方案：本发明涉及一种辐射发射半导体芯片（1），其包括用于产生具有波长λ的辐射的有源区（2）以及具有不规则排列的图案元件的图案区域（3）。图案元件包含具有第一折射率n的第一材料，并且被包括具有第二折射率n的第二材料的介质包围。本发明涉及一种用于制造辐射发射半导体芯片的方法。

4. 发明专利

JP2010010622A Semiconductor optical device 审中-公开
标题翻译：半导体光学器件
公开(公告)号：JP2010010622A
公开(公告)日：2010-01-14
申请号：JP2008171418
申请日：2008-06-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HASHIMOTO JUNICHI
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2004 , H01S5/222 , H01S5/2222 , H01S5/2224 , H01S5/2275 , H01S5/3072 , H01S5/34306
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical device improving laser characteristics by reducing a leakage current flowing along both sides of an active layer.
SOLUTION: The semiconductor optical device 51 includes a mesa stripe part 20A including a first cladding layer 3n, the active layer 5, and a second cladding layer 7p provided on a semiconductor substrate 2n, the current block layer 9 formed to bury a side surface of the mesa stripe part 20A and in which impurities having action for capturing at least one of an electron and hole is doped, an n-type semiconductor intermediate layer 11A and a p-type semiconductor intermediate layer 10A formed between the mesa stripe part 20A and the current block layer 9. The p-type semiconductor intermediate layer 10A is in contact with the side surface of the mesa stripe part 20A, and the n-type semiconductor intermediate layer 11A is formed between the p-type semiconductor intermediate layer 10A and the current block layer 9.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：通过减少沿有源层的两侧流动的漏电流来提供提高激光特性的半导体光学器件。解决方案：半导体光学器件51包括：第一包层3n，有源层5和设置在半导体衬底2n上的第二包层7p的台面条状部分20A，形成为埋设一个台阶条部分20A的侧表面，其中掺杂有捕获至少一个电子和空穴的杂质的杂质，形成在台面条状部分之间的n型半导体中间层11A和p型半导体中间层10A 20A和当前的阻挡层9.P型半导体中间层10A与台面条状部分20A的侧面接触，并且n型半导体中间层11A形成在p型半导体中间层10A 和当前的阻挡层9.版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP4317357B2 Semiconductor laser device and a method of manufacturing the same 有权
公开(公告)号：JP4317357B2
公开(公告)日：2009-08-19
申请号：JP2002333509
申请日：2002-11-18
申请人：シャープ株式会社
发明人：禎亮上田 , 一彦和田 , 啓介宮嵜 , 泰司森本 , 正毅辰巳
IPC分类号： H01S5/22 , H01S5/00 , H01S5/02 , H01S5/223 , H01S5/40
CPC分类号： H01S5/2231 , H01S5/0655 , H01S5/222 , H01S5/4031 , H01S5/4087 , H01S2302/00

7. 发明专利

JP2005286192A Optically integrated device 审中-公开
标题翻译：光学集成设备
公开(公告)号：JP2005286192A
公开(公告)日：2005-10-13
申请号：JP2004099856
申请日：2004-03-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HASHIMOTO JUNICHI , KATSUYAMA TSUKURU , KOYAMA KENJI
IPC分类号： H01S5/026 , G02B6/12 , G02B6/122 , G02B6/13 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： PROBLEM TO BE SOLVED: To provide an optically integrated device that does not have a butt joint structure and uses a GaAs substrate. SOLUTION: In the optically integrated device 1, the GaAs substrate 3 has a first area 3a and a second area 3b arranged along a predetermined axis Ax. A first clad layer 5 is provided on the first area 3a and the second area 3b of the GaAs substrate 3. A second clad layer 7 is provided on the first and second areas 3a, 3b of the GaAs substrate 3. A semiconductor area 9 is provided between the first clad layer 5 and the second clad layer 7. The semiconductor area 9 has a first portion 9a provided on the first area 3a of the GaAs substrate 3, and a second portion 9b provided on the second area 3b of the GaAs substrate 3. The first portion 9a has a quantum well structure of band gap of 1.3 electron volts or more. The band gap in the first portion 9a is different from that of the second portion 9b. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种不具有对接结构并使用GaAs衬底的光学集成器件。解决方案：在光学集成器件1中，GaAs衬底3具有沿预定轴线Ax布置的第一区域3a和第二区域3b。第一覆盖层5设置在GaAs衬底3的第一区域3a和第二区域3b上。第二覆盖层7设置在GaAs衬底3的第一和第二区域3a，3b上。半导体区域9 设置在第一包层5和第二包层7之间。半导体区域9具有设置在GaAs衬底3的第一区域3a上的第一部分9a和设置在GaAs衬底的第二区域3b上的第二部分9b 第一部分9a具有1.3V电压以上的带隙的量子阱结构。第一部分9a中的带隙不同于第二部分9b的带隙。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005150181A Manufacturing method for semiconductor laser 有权
标题翻译：半导体激光的制造方法
公开(公告)号：JP2005150181A
公开(公告)日：2005-06-09
申请号：JP2003382026
申请日：2003-11-12
申请人： Hitachi Ltd , Opnext Japan Inc , 日本オプネクスト株式会社 , 株式会社日立製作所
发明人： SATO HIROSHI , TSUCHIYA TOMONOBU , AOKI MASAHIRO , KITATANI TAKESHI , TAKAHASHI NORIJI
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/306 , H01L31/107 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01L31/1075 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1014 , H01S5/1228 , H01S5/2201 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/3436 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a laser element having a buried growth layer having few crystal defects and having a high reliability with a low power consumption by preventing the obstruction of the buried re-growth of an active layer by the oxidation of Al contained in the active layer in a buried hetero type laser using an InGaAlAs material as the active layer.
SOLUTION: In the semiconductor laser in which an active layer 102 and a clad layer 103 are laminated successively on at least a part or the whole on a semiconductor substrate 101, the active layer is composed of a material containing at least Al and a sectional structure is formed in a buried hetero type. The manufacturing method for the semiconductor device has a process in which the active layer is worked in a striped shape or a mesa shape by an etching containing at least a wet etching, the process in which a striped-shaped core-layer side wall is purified in a crystal growth device by using a gas containing chlorine or other halogen elements, and the process in which the active layer is buried with a semiconductor in the formation of the buried hetero type structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种激光元件的制造方法，其具有通过防止有源层的埋入再生长的阻碍而具有晶体缺陷少的埋入生长层和具有低功耗的高可靠性的激光元件通过使用InGaAlAs材料作为活性层，在埋入异质型激光器中的有源层中包含的Al的氧化。解决方案：在半导体衬底101上至少部分或全部依次层叠有源层102和覆盖层103的半导体激光器中，活性层由至少包含Al和截面结构形成为埋入异型。半导体器件的制造方法具有通过至少包含湿蚀刻的蚀刻来将活性层加工成条状或台面形状的工序，其中条状芯层侧壁被净化的工序在通过使用含有氯或其它卤素元素的气体的晶体生长装置中，以及在形成埋入异质结构中有源层被半导体掩埋的工艺。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005019679A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2005019679A
公开(公告)日：2005-01-20
申请号：JP2003182401
申请日：2003-06-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKASE TEI
IPC分类号： H01S5/30 , H01S3/04 , H01S5/16 , H01S5/22 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/1014 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/209 , H01S5/22 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/3211 , H01S5/3421 , H01S5/3432 , H01S5/34326 , H01S5/3436 , H01S2301/185
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which attains a low aspect ratio without lowering a kink level.
SOLUTION: The semiconductor laser device is configured such that an active layer is provided between a semiconductor layer of one conductive type and a semiconductor layer of the other conductive type having a ridge, and that a window region, i.e. a non-gain region is provided at each of opposite ends thereof. An equivalent index difference between a ridge and both ends thereof in the window regions is made larger than that between a ridge and both ends thereof in a gain region excepting the window regions.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004327862A Surface light emitting semiconductor laser and its manufacturing method 有权
公开(公告)号：JP2004327862A
公开(公告)日：2004-11-18
申请号：JP2003122697
申请日：2003-04-25
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OTOMA HIROKI
IPC分类号： H01S3/08 , H01S5/00 , H01S5/183 , H01S5/22 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/18358 , H01S5/2214 , H01S5/222 , H01S5/305 , H01S5/3054 , H01S5/3432 , H01S2301/166 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide an oxidized surface light emitting semiconductor laser which enables rapid operation at a low resistance and its manufacturing method.
SOLUTION: The surface light emitting semiconductor laser of a vertical resonator type has an n-type lower multilayer reflection film 102, a spacer layer 103 including an active layer 104, a current constriction layer 105 consisting of an AlAs layer with an oxidation region 108 selected from a side surface of a post 112 and a p-type upper multilayer reflection film 110. In the semiconductor laser, when a low resistance layer 106 is formed immediately below the current constriction layer 105, the low resistance layer 106 is formed of Al
x Ga
1-x As and the composition of the upper multilayer reflection film 110 is Al
a Ga
1-a As and Al
b Ga
1-b As, a>x>b.
COPYRIGHT: (C)2005,JPO&NCIPI

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