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1. 发明专利

JP6185602B2 半導体レーザ素子を用いた近接場光出射装置有权
公开(公告)号：JP6185602B2
公开(公告)日：2017-08-23
申请号：JP2015549016
申请日：2014-08-27
申请人：シャープ株式会社
发明人：谷健太郎 , 川上俊之 , 有吉章
IPC分类号： H01S5/028 , G02B6/42 , G11B5/02 , G11B5/31 , H01S5/022
CPC分类号： H01S5/028 , H01S5/0208 , H01S5/02256 , H01S5/042 , H01S5/0425 , H01S5/22 , H01S5/162

2. 发明专利

JP2014139966A Light emitting device, super luminescent diode and projector 有权
标题翻译：发光装置，超级发光二极管和投影仪
公开(公告)号：JP2014139966A
公开(公告)日：2014-07-31
申请号：JP2013008094
申请日：2013-01-21
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MOCHIZUKI MASAMITSU , NAKAWA TOMOFUMI
IPC分类号： H01L33/02 , G02F1/13 , G03B21/00 , G03B21/14 , H01L33/30
CPC分类号： G03B21/2033 , B82Y20/00 , G03B21/2066 , H01L33/0045 , H01L33/10 , H01S5/0203 , H01S5/028 , H01S5/1003 , H01S5/101 , H01S5/1071 , H01S5/162 , H01S5/34326
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device capable of suppressing occurrence of a COD at a first reflection part, where a light traveling direction changes, in an optical waveguide.SOLUTION: A light emitting device 100 according to the present invention includes: an active layer 106; and a first cladding layer 104 and a second cladding layer 108 sandwiching the active layer 106. The active layer 106 configures an optical waveguide 160 guiding light. In the optical waveguide 160, the traveling direction of light guided in the optical waveguide 160 changes at a first reflection part 190 provided on a first side face 131 of the active layer 106 and allowing light to be reflected. The first reflection part 190 is located at the outside of a region where the first cladding layer 104 and the second cladding layer 108 are provided, as viewed from the lamination direction of the active layer 106 and the first cladding layer 104.
摘要翻译：要解决的问题：提供一种能够抑制光波导中的光行进方向变化的第一反射部的COD的发生的发光装置。解决方案：根据本发明的发光器件100包括：活性层106; 以及夹持有源层106的第一覆层104和第二覆层108.有源层106构成引导光的光波导160。在光波导160中，在光波导160中引导的光的行进方向在设置在有源层106的第一侧面131上的第一反射部190变化，并允许光被反射。从有源层106和第一包层104的层叠方向观察，第一反射部190位于设置有第一包层104和第二包层108的区域的外侧。

3. 发明专利

JP5005300B2 Semiconductor laser device 有权
公开(公告)号：JP5005300B2
公开(公告)日：2012-08-22
申请号：JP2006242513
申请日：2006-09-07
申请人：パナソニック株式会社
发明人：智也佐藤 , 功一早川 , 勲木戸口 , 徹高山
IPC分类号： H01S5/22
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/162 , H01S5/22 , H01S5/4087

4. 发明专利

JP4671793B2 Semiconductor laser device and a method of manufacturing the same 有权
公开(公告)号：JP4671793B2
公开(公告)日：2011-04-20
申请号：JP2005212226
申请日：2005-07-22
申请人：パナソニック株式会社
发明人：秀利古川 , 敏哉福久 , 正也萬濃
IPC分类号： H01S5/22 , H01S5/16 , H01S5/343
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/2231 , H01S5/3201 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087

5. 发明专利

JP2009130316A Nitride semiconductor device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：JP2009130316A
公开(公告)日：2009-06-11
申请号：JP2007306929
申请日：2007-11-28
申请人： Panasonic Corp , パナソニック株式会社
发明人： ISHIDA MASAHIRO
IPC分类号： H01S5/22 , H01S5/028
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/162 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3213 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To obtain a high-power and long-life nitride semiconductor device by reducing hydrogen which remains in a p-type nitride semiconductor layer.
SOLUTION: The nitride semiconductor device includes a semiconductor substrate 11, the p-type semiconductor layer which is formed on or above the semiconductor substrate 11, is composed of nitride semiconductor and includes a first impurity and an insulating film 20 which contacts the p-type semiconductor layer and has an impurity region 23 including a second impurity capturing hydrogen. The impurity region 23 captures hydrogen remaining in the p-type semiconductor layer, so that the concentration of hydrogen of the impurity region 23 is higher than the part other than the impurity region 23 in the insulating film 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过减少保留在p型氮化物半导体层中的氢来获得高功率和长寿命的氮化物半导体器件。解决方案：氮化物半导体器件包括半导体衬底11，形成在半导体衬底11上或上方的p型半导体层由氮化物半导体构成，并且包括第一杂质和与第一杂质接触的绝缘膜20 p型半导体层，并且具有包含俘获氢的第二杂质的杂质区23。杂质区域23捕获在p型半导体层中剩余的氢，使得杂质区23的氢浓度高于绝缘膜20中的杂质区23以外的部分。版权所有（C））2009，JPO＆INPIT

6. 发明专利

JP4253516B2 Semiconductor laser device and a method of manufacturing the same 有权
公开(公告)号：JP4253516B2
公开(公告)日：2009-04-15
申请号：JP2003049117
申请日：2003-02-26
申请人：シャープ株式会社
发明人：文枝國政 , 伸洋大久保
IPC分类号： H01S5/16 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/168 , H01S5/2206 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3213 , H01S5/34326 , H01S5/3436

7. 发明专利

JP2009076665A Semiconductor laser apparatus and method for manufacturing same 审中-公开
标题翻译：半导体激光装置及其制造方法
公开(公告)号：JP2009076665A
公开(公告)日：2009-04-09
申请号：JP2007244068
申请日：2007-09-20
申请人： Panasonic Corp , パナソニック株式会社
发明人： KAJIMA TAKAYUKI , MAKITA KOJI , YOSHIKAWA KENJI
IPC分类号： H01S5/16 , H01S5/026 , H01S5/40
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/22 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To realize a high-output, low-cost, monolithic laser apparatus of two or more laser wavelengths. SOLUTION: This semiconductor laser apparatus has a first semiconductor laser element 12 and a second semiconductor laser element 13. The first semiconductor laser element 12 has a first end surface window structure 41, which has a region containing a first dopant formed near the end surface. The second semiconductor laser element has a second end surface window structure 42, which has a region containing a second dopant formed near the end surface. A distance from the lower end of a first active layer 23 to the lower end of the end surface window structure 41 is shorter than that from the lower end of a second active layer 33 to the lower end of the second end surface window structure 42. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：实现两个或更多个激光波长的高输出，低成本的单片激光装置。解决方案：该半导体激光装置具有第一半导体激光元件12和第二半导体激光元件13.第一半导体激光元件12具有第一端面窗结构41，该第一端面结构41具有包含形成在第端面。第二半导体激光元件具有第二端面窗结构42，第二端面窗结构42具有包含在端表面附近形成的第二掺杂物的区域。从第一有源层23的下端到端面窗结构41的下端的距离比从第二有源层33的下端到第二端面窗结构体42的下端的距离短。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008235790A Manufacturing method of semiconductor light element 审中-公开
标题翻译：半导体光元件的制造方法
公开(公告)号：JP2008235790A
公开(公告)日：2008-10-02
申请号：JP2007076871
申请日：2007-03-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ABE SHINJI
IPC分类号： H01S5/16 , B82Y20/00 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/162 , H01S5/2009 , H01S5/2214 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To manufacture an LD having high COD resistance by using simple processes, in the LD having a GaN-based material.
SOLUTION: This manufacturing method comprises a step of forming a semiconductor laminated structure 55 by successively laminating on a GaN substrate 12 a buffer layer 14, a first n-clad layer 16, a second n-clad layer 18, a third n-clad layer 20, an n-side optical guide layer 22, an active layer 26 of a quantum well structure, a p-side SCH layer 28, an electron barrier layer 30, a p-side optical guide layer 32, a p-clad layer 34 and a contact layer 36 which are formed of the GaN-based materials; a step of forming the cleavage of a semiconductor wafer including the semiconductor laminating structure 55 for exposing the cleavage end face 58 of the semiconductor laminating structure 55; and a step of forming an SiO
2 film 60 on the exposed cleavage end face for disordering the active layer 26 by the Ga void diffusion based on predetermined heat treatment.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在具有GaN基材料的LD中，通过简单的工艺制造具有高COD电阻的LD。解决方案：该制造方法包括通过在GaN衬底12上依次层叠缓冲层14，第一n覆层16，第二n覆层18，第三n 包层20，n侧光导层22，量子阱结构的有源层26，p侧SCH层28，电子势垒层30，p侧导光层32，包覆层34和由GaN基材料形成的接触层36; 形成半导体晶片的切割的步骤，该半导体晶片包括用于暴露半导体层叠结构55的解理端面58的半导体层叠结构55; 以及通过基于预定的热处理的Ga空穴扩散，在暴露的解理端面上形成SiO 2 SBB薄膜60的步骤，使有源层26无序扩散。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008091713A Two-wavelength semiconductor laser device 审中-公开
标题翻译：双波长半导体激光器件
公开(公告)号：JP2008091713A
公开(公告)日：2008-04-17
申请号：JP2006272125
申请日：2006-10-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TAKAYAMA TORU , SATO TOMOYA , KIDOGUCHI ISAO
IPC分类号： H01S5/026 , B82Y20/00 , H01S5/343
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/2059 , H01S5/4087 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To suitably suppress the generation of a reactive current flowing through a window part owing to the enhancement of disordering for window region formation for both of two kinds of semiconductor lasers that are integrated.
SOLUTION: First and second semiconductor lasers 10 and 20 comprising buffer layers 11 and 21, clad layers 12 and 22, quantum well active layers 13 and 23 and clad layers 14 and 24 laminated on a substrate 1 while having a stripe structure are integrated on the same substrate, and the quantum well active layer near a resonator end face is disordered by impurity diffusion. When defining the oscillation wavelengths of the active layers of the first and second semiconductor lasers respectively as λ1 and λ2, the energies of the forbidden band width of the buffer layers of the first and second semiconductor lasers respectively as E1 and E2 while wavelengths equivalent to the energies of the forbidden band width of the buffer layers of the first and second semiconductor lasers respectively as λb1 and λb2, the relations of λ1>λb1, λ2>λb2, λ1>λ2 and E1≤E2 are satisfied.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了适当地抑制由于对于两个集成的两种半导体激光器的窗口区域形成的不均匀性的增加，流过窗口部分的无功电流的产生。解决方案：包括缓冲层11和21，包覆层12和22，量子阱有源层13和23以及层叠在基板1上的包层14和24同时具有条纹结构的第一和第二半导体激光器10和20是集成在相同的衬底上，并且在谐振器端面附近的量子阱有源层由于杂质扩散而紊乱。当将第一和第二半导体激光器的有源层的振荡波长分别定义为λ1和λ2时，第一和第二半导体激光器的缓冲层的禁带宽度的能量分别为E1和E2，而波长相当于第一和第二半导体激光器的缓冲层的禁带宽度的能量分别为λb1和λb2，满足λ1>λb1，λ2>λb2，λ1>λ2和E1≤E2的关系。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP4077348B2 The semiconductor laser device and an optical pickup device using the same 有权
公开(公告)号：JP4077348B2
公开(公告)日：2008-04-16
申请号：JP2003072703
申请日：2003-03-17
申请人：松下電器産業株式会社
发明人：徹高山
IPC分类号： H01S5/223 , G11B7/12 , G11B7/125 , H01S5/00 , H01S5/042 , H01S5/10 , H01S5/16 , H01S5/22
CPC分类号： H01S5/2231 , G11B7/123 , H01S5/02248 , H01S5/02292 , H01S5/0421 , H01S5/1014 , H01S5/162 , H01S5/2201 , H01S5/221

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