专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012156749A Optical receiver 有权
标题翻译：光接收机
公开(公告)号：JP2012156749A
公开(公告)日：2012-08-16
申请号：JP2011013717
申请日：2011-01-26
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： TAKASHIMA SHIGEHIRO , AKASHI MITSUHISA , ERA YOSHIKAZU , TAKAI ATSUSHI
IPC分类号： H04B10/516 , H04B10/07 , H04B10/524 , H04B10/556 , H04B10/61 , H04L7/02 , H04L27/22
CPC分类号： H04B10/613 , H04B10/69
摘要： PROBLEM TO BE SOLVED: To establish signal conduction at a high speed with no use of such combination as a bit shift overlaps with a pattern change, in pattern synchronization for correctly reproducing reception data which is performed with an optical receiver that receives an optical signal subjected to orthogonal phase modulation.SOLUTION: The control method does not confirm a duplicated combination caused by a modulation method and a pattern synchronization searching order. A signal check circuit performs data confirmation of the data multiplexed by an MUX circuit which multiplexes two data trains. A bit shift/pattern change control circuit controls a bit shift circuit and a pattern change circuit based on the data confirmation result to detect a correct combination of correct reproduction data and establish signal conduction. Here, no confirmation is performed on duplicated combination, for the bit shift circuit and the pattern change circuit.
摘要翻译：要解决的问题：为了正确再现接收数据的光接收器执行的图形同步，为了不用比特移位与图形变化重叠的组合来高速建立信号传导，光信号进行正交相位调制。
解决方案：控制方法不能确认由调制方法和模式同步搜索顺序引起的复制组合。信号检查电路对通过多路复用两个数据列的MUX电路复用的数据进行数据确认。位移/模式改变控制电路基于数据确认结果控制位移电路和模式改变电路，以检测正确的再现数据的正确组合并建立信号传导。这里，对于位移电路和模式改变电路，不对复制组合进行确认。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012134346A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2012134346A
公开(公告)日：2012-07-12
申请号：JP2010285684
申请日：2010-12-22
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： YODA TAKESHI , TANMACHI SUSUMU
IPC分类号： H01S5/042
摘要： PROBLEM TO BE SOLVED: To improve a semiconductor laser device which improves heat radiation.SOLUTION: A groove 10 is provided on a rear surface of a substrate 1 of a laser chip 11, and a part of a rear surface electrode 12 formed on the rear surface of the substrate 1 is disposed in the groove 10. This structure shortens a distance between the rear surface electrode 12 and a light emitting part 7, and increases a surface area of the rear surface electrode 12. Thus, part of heat generated from the light emitting part 7 is released to the exterior through the rear surface electrode 12, and heat radiation of the laser chip 11 is improved.
摘要翻译：解决的问题：为了改善改善散热的半导体激光器件。解决方案：在激光芯片11的基板1的后表面上设置有槽10，并且形成在基板1的后表面上的后表面电极12的一部分设置在槽10中。结构缩短了后表面电极12和发光部分7之间的距离，并且增加了后表面电极12的表面积。因此，从发光部分7产生的部分热量通过后表面释放到外部电极12，激光芯片11的散热得到改善。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012124361A Manufacturing method of semiconductor optical element and semiconductor optical element 审中-公开
标题翻译：半导体光学元件和半导体光学元件的制造方法
公开(公告)号：JP2012124361A
公开(公告)日：2012-06-28
申请号：JP2010274498
申请日：2010-12-09
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SAKUMA YASUSHI , HAYAKAWA SHIGENORI , NAKAMURA ATSUSHI , WASHINO TAKASHI
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To suppress a leak current from occurring when a separation groove provided to electrically separate a waveguide part included in a semiconductor optical element of PBH structure is not formed appropriately.SOLUTION: A manufacturing method of a semiconductor optical element comprises: a step of forming a mesa stripe-shaped active layer 12 on an n-type InP substrate 10; a step of forming an Ru-InP layer 14 up to a higher position than the active layer 12 on both sides of the active layer 12; a step of forming a silicon oxide film 18 in a separation groove formation region 20 provided on a surface of the Ru-InP layer 14; and a step of forming a P-InP layer 16 by crystal growth on the Ru-InP layer 14 on which the silicon oxide film 18 was formed.
摘要翻译：要解决的问题：为了防止当不能适当地形成用于电气分离包含在PBH结构的半导体光学元件中的波导部分的分隔槽时发生泄漏电流的问题。解决方案：半导体光学元件的制造方法包括：在n型InP衬底10上形成台面条状有源层12的步骤; 形成Ru-InP层14直到有源层12两侧的有源层12更高的位置的步骤; 在设置在Ru-InP层14的表面上的分离槽形成区域20中形成氧化硅膜18的步骤; 以及在形成有氧化硅膜18的Ru-InP层14上通过晶体生长形成P-InP层16的工序。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012018225A Demodulator and optical transmitter/receiver 有权
标题翻译：解调器和光学发射器/接收器
公开(公告)号：JP2012018225A
公开(公告)日：2012-01-26
申请号：JP2010154137
申请日：2010-07-06
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： MIKAMI HIDEJI
IPC分类号： G02F2/00 , H04B10/516 , H04B10/524 , H04B10/54 , H04B10/556 , H04B10/61
CPC分类号： H04L27/223 , H04B10/613 , H04B10/614
摘要： PROBLEM TO BE SOLVED: To solve the problems that, in a demodulator of a phase shift keying signal of spatial optical system type, when a half beam splitter as non-polarization light branching means which is used for generating a light flux equivalent to I/Q channel or used for multiplexing of interfering light is used, since power branching ratio is difficult to be controlled and phase shift, which varies depending on input polarization status, has to be suppressed, the cost for the demodulator is increased; and also since each branched light has a different direction, skew of the demodulator is difficult to suppress.SOLUTION: In a demodulator of a phase shift keying signal of spatial optical system type, non-polarization light branching means, which is used for generating a light flux equivalent to I/Q channel or used for multiplexing of interfering light, is achieved by using a polarization rotation element and a polarization separating element. Also, branch light fluxes are substantially aligned.
摘要翻译：解决的问题为了解决在空间光学系统类型的相移键控信号的解调器中，当用作产生光通量当量的非偏振光分支装置的半分光器使用I / Q信道或用于干扰光的多路复用，由于难以控制功率分配比，必须抑制根据输入极化状态而变化的相移，所以解调器的成本增加; 并且由于每个分支光具有不同的方向，所以解调器的偏斜难以抑制。解决方案：在空间光学系统类型的相移键控信号的解调器中，用于产生等效于I / Q通道的光束或用于干扰光的多路复用的非偏振光分支装置是通过使用偏振旋转元件和偏振分离元件来实现。此外，分支光通量基本对齐。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012008480A Optical transceiver and electronic device 有权
标题翻译：光收发器和电子设备
公开(公告)号：JP2012008480A
公开(公告)日：2012-01-12
申请号：JP2010146604
申请日：2010-06-28
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： OMORI KOICHI , HATANO OSAMU , ARIMA HIROYUKI , ISHII HIROYOSHI , OTAKE TOSHIKAZU , HARADA EIICHI
IPC分类号： G02B6/42 , H05K9/00
摘要： PROBLEM TO BE SOLVED: To reduce interference between electronic components mounted on a circuit board without preventing high-density mounting.SOLUTION: An optical transceiver 100 includes: an attachment 30 holding an optical transmission assembly 26 and an optical reception assembly 28 and including a concave electric wave-absorbing sheet fixing groove 38 longitudinally crossing a side face between the assemblies 26 and 28; a tray 40 including a concave electric wave-absorbing sheet fixing groove 48 longitudinally crossing the side face; a circuit board 16 mounting the attachment 30 and the tray 40 arranged such that the electric wave-absorbing sheet fixing grooves 38, 48 are opposed to each other, and electrically connected to the optical transmission assembly 26 and the optical reception assembly 28 respectively; a plate electrical wave-absorbing sheet 50 having one side part adjacent to a lower part which is held by the electric wave-absorbing sheet fixing groove 38 such that the lower part contacts the circuit board 16 and an opposed side part opposed to the one side part which is held by the electric wave-absorbing sheet fixing groove 48; and a case 10 for storing the components.
摘要翻译：要解决的问题：减少安装在电路板上的电子部件之间的干扰，而不会妨碍高密度安装。解决方案：光收发器100包括：保持光传输组件26和光接收组件28的附件30，并且包括纵向与组件26和28之间的侧面相交的凹陷电波吸收片固定槽38; 托盘40，其包括纵向与所述侧面相交的凹形电波吸收片固定槽48; 安装附件30和托盘40的电路板16，其布置成使得电波吸收片固定槽38,48彼此相对并分别电连接到光传输组件26和光接收组件28; 具有与由电波吸收片固定槽38保持的下部相邻的一个侧部的板电吸收片50，使得下部接触电路板16，并且与该一侧相对的相对侧部由电波吸收片固定槽48保持的部分; 以及用于存储部件的壳体10。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012002929A Method for manufacturing semiconductor optical element, laser module, and optical transmission apparatus 审中-公开
标题翻译：制造半导体光学元件，激光模块和光传输装置的方法
公开(公告)号：JP2012002929A
公开(公告)日：2012-01-05
申请号：JP2010136220
申请日：2010-06-15
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SASADA NORIKO , NAOE KAZUHIKO , SAKAI MIO
IPC分类号： G02F1/017 , H01S5/026 , H01S5/227 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor optical element which improves the characteristics of a semiconductor optical element with a buried hetero structure by providing a structure capable of reducing parasitic capacitance, and to provide a laser module and an optical transmission apparatus.SOLUTION: The invention relates to a method for manufacturing the semiconductor optical element that has a modulator portion for modulating and emitting light input along an emitting direction. The modulator portion includes: a quantum well layer containing aluminum; a semiconductor multi-layer having a mesa-stripe structure; and a semiconductor buried layer which is disposed on both sides of the semiconductor multi-layer and adjacent to them, and in which impurities are added. The method comprises: the step of forming the mesa-stripe structure by removing a predetermined area from the semiconductor multi-layer; the step of cleaning both surfaces of the semiconductor multi-layer by use of chlorine gas; and the step of forming the semiconductor buried layers on both sides of the semiconductor multi-layer, in this order.
摘要翻译：解决的问题：提供一种半导体光学元件的制造方法，其通过提供能够降低寄生电容的结构来提高具有埋入异质结构的半导体光学元件的特性，并提供激光模块和光传输装置。解决方案：本发明涉及一种制造半导体光学元件的方法，该方法具有用于调制和发射沿着发射方向的光输入的调制器部分。调制器部分包括：含有铝的量子阱层; 具有台面条状结构的半导体多层; 以及半导体埋层，其设置在半导体多层的两侧并与其相邻，并且添加有杂质。该方法包括：通过从半导体多层去除预定区域来形成台面条状结构的步骤; 通过使用氯气清洗半导体多层的两个表面的步骤; 以及在半导体多层的两面上依次形成半导体掩埋层的步骤。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011171759A Communication semiconductor laser and method of manufacturing communication semiconductor laser 审中-公开
标题翻译：通信半导体激光器和制造通信半导体激光器的方法
公开(公告)号：JP2011171759A
公开(公告)日：2011-09-01
申请号：JP2011098882
申请日：2011-04-27
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KAMIYAMA HIROYUKI , MUKAIKUBO MASARU , INOUE HIROAKI , KITAHARA TOMOYUKI
IPC分类号： H01S5/02
摘要： PROBLEM TO BE SOLVED: To solve a problem of a semiconductor laser that has an initial failure rate a little higher than a conventional one with an active layer material, because there is a semiconductor having an initial failure mode that is almost independent from a temperature, and proceeding depending on the amount of internal optical power that is the amount of an optical output observed at the outside, and the larger the amount of the output light, the more the inadequate of the screening of the proceeding failure mode.
SOLUTION: It is effective to adapt a large optical output test at a low temperature that is lower than that of an average operation temperature as room temperature in a manufacturing step. Thus, an element having initial failure mode that proceeds more as the amount of the light output is large is eliminated to elongate an expected life.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决半导体激光器的问题，该半导体激光器的初始故障率比传统的具有活性层材料的故障率稍高，因为存在具有几乎独立于初始故障模式的初始故障模式的半导体温度，并且取决于作为在外部观察到的光输出量的内部光功率的量，并且输出光的量越大，进行的故障模式的筛选的不足。
解决方案：在制造步骤中，将低于平均工作温度的低温度的大型光输出测试适应为室温是有效的。因此，消除了具有初始故障模式的元件，其随着光输出量的增加而进行得更多，以延长预期寿命。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2011142239A Semiconductor optical element, and method of manufacturing the same 有权
标题翻译：半导体光学元件及其制造方法
公开(公告)号：JP2011142239A
公开(公告)日：2011-07-21
申请号：JP2010002598
申请日：2010-01-08
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： YASUHARA NOZOMI , NAKAMURA ATSUSHI
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element that suppresses variations in characteristics of a plurality of semiconductor optical elements produced from one wafer, and improves a yield, and also to provide a method of manufacturing the same. SOLUTION: A semiconductor optical element includes: an active layer; and a multi-layer structure having a diffraction grating layer formed in an upper part or a lower part of the active layer. In the semiconductor optical element, the diffraction grating layer is formed so as to elongate from a front end surface along an irradiation direction of light over a back end located inside a backward end surface. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体光学元件，其抑制由一个晶片制造的多个半导体光学元件的特性的变化，并且提高产量，并且还提供其制造方法。解决方案：半导体光学元件包括：有源层; 以及具有形成在有源层的上部或下部的衍射光栅层的多层结构。在半导体光学元件中，衍射光栅层形成为从位于后端面的后端的光的照射方向的前端面延伸。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011139110A Method of manufacturing semiconductor laser element 审中-公开
标题翻译：制造半导体激光元件的方法
公开(公告)号：JP2011139110A
公开(公告)日：2011-07-14
申请号：JP2011090883
申请日：2011-04-15
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KAWANAKA SATOSHI
IPC分类号： H01S5/028 , H01S5/223
摘要： PROBLEM TO BE SOLVED: To achieve output improvement and characteristic stabilization of a red semiconductor laser. SOLUTION: In a method of manufacturing the semiconductor laser element having a coating film provided at least at one end of a resonator, the coating film including a first layer formed on a resonator end surface and a second layer formed on the first layer, the first layer and second layer are formed with design values configured such that the sum of an optical thickness d1 of the first layer and an optical thickness d2 of the second layer is 0.45 to 0.55 times as large as a wavelength of laser light and the optical film thickness ratio d1/d2 of the first layer to the second layer satisfies 0.54≤d1/d2≤0.95 or 1.05≤d1/d2≤1.86. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：实现红色半导体激光器的输出改善和特性稳定化。解决方案：在制造具有设置在谐振器的至少一端的涂膜的半导体激光元件的方法中，所述涂膜包括形成在谐振器端面上的第一层和形成在第一层上的第二层形成第一层和第二层，其设计值被构造成使得第一层的光学厚度d1和第二层的光学厚度d2之和为激光波长的0.45至0.55倍，并且第一层与第二层的光学膜厚比d1 / d2满足0.54≤d1/d2≤0.95或1.05≤d1/d2≤1.86。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2011124445A Semiconductor optical element and method of manufacturing semiconductor optical element 有权
标题翻译：半导体光学元件和制造半导体光学元件的方法
公开(公告)号：JP2011124445A
公开(公告)日：2011-06-23
申请号：JP2009282011
申请日：2009-12-11
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： YAMAUCHI TOSHIYA , WASHIMI SEIJI , IGARASHI JUN , SAKUMA YASUSHI , HAYAKAWA SHIGENORI
IPC分类号： H01S5/227 , H01S5/026 , H01S5/12 , H01S5/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element capable of easily making reflected light less than before, and to provide a method of manufacturing semiconductor optical element.
SOLUTION: The semiconductor optical element 1 includes an optical waveguide portion 16 composed of a crystal layer. At the optical waveguide 16, a tapered tip portion 16a is formed. At the tip portion 16a of the optical waveguide 16, an end surface 16b where light is emitted is formed along a direction different from a direction along the crystal plane orientation of the crystal layer.
COPYRIGHT: (C)2011,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式