专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2005150181A Manufacturing method for semiconductor laser 有权
标题翻译：半导体激光的制造方法
公开(公告)号：JP2005150181A
公开(公告)日：2005-06-09
申请号：JP2003382026
申请日：2003-11-12
申请人： Hitachi Ltd , Opnext Japan Inc , 日本オプネクスト株式会社 , 株式会社日立製作所
发明人： SATO HIROSHI , TSUCHIYA TOMONOBU , AOKI MASAHIRO , KITATANI TAKESHI , TAKAHASHI NORIJI
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/306 , H01L31/107 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01L31/1075 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1014 , H01S5/1228 , H01S5/2201 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/3436 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a laser element having a buried growth layer having few crystal defects and having a high reliability with a low power consumption by preventing the obstruction of the buried re-growth of an active layer by the oxidation of Al contained in the active layer in a buried hetero type laser using an InGaAlAs material as the active layer.
SOLUTION: In the semiconductor laser in which an active layer 102 and a clad layer 103 are laminated successively on at least a part or the whole on a semiconductor substrate 101, the active layer is composed of a material containing at least Al and a sectional structure is formed in a buried hetero type. The manufacturing method for the semiconductor device has a process in which the active layer is worked in a striped shape or a mesa shape by an etching containing at least a wet etching, the process in which a striped-shaped core-layer side wall is purified in a crystal growth device by using a gas containing chlorine or other halogen elements, and the process in which the active layer is buried with a semiconductor in the formation of the buried hetero type structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种激光元件的制造方法，其具有通过防止有源层的埋入再生长的阻碍而具有晶体缺陷少的埋入生长层和具有低功耗的高可靠性的激光元件通过使用InGaAlAs材料作为活性层，在埋入异质型激光器中的有源层中包含的Al的氧化。解决方案：在半导体衬底101上至少部分或全部依次层叠有源层102和覆盖层103的半导体激光器中，活性层由至少包含Al和截面结构形成为埋入异型。半导体器件的制造方法具有通过至少包含湿蚀刻的蚀刻来将活性层加工成条状或台面形状的工序，其中条状芯层侧壁被净化的工序在通过使用含有氯或其它卤素元素的气体的晶体生长装置中，以及在形成埋入异质结构中有源层被半导体掩埋的工艺。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2010287873A Semiconductor electroluminescent device 有权
标题翻译：半导体电致发光器件
公开(公告)号：JP2010287873A
公开(公告)日：2010-12-24
申请号：JP2009250808
申请日：2009-10-30
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： FUKAMACHI TOSHIHIKO , SHIODA TAKASHI , KITATANI TAKESHI , YASUHARA NOZOMI , NAKAMURA ATSUSHI , SAWADA MITSUHIRO
IPC分类号： H01S5/343
CPC分类号： H01S5/3434 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/3403 , H01S5/3407
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile-strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer, which is high-performance and high-reliability in a wide temperature range. SOLUTION: In a multiple-quantum well layer of this semiconductor electroluminescent device, the value of interface strain at an interface between the well layer and the barrier layer is smaller than that of critical interface strain depending on the value of a layer thickness which is larger one out of a thickness of the well layer and that of the barrier layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有拉伸应变的基于InGaAlAs的阱层的半导体场致发光器件，或具有具有拉伸应变的InGaAsP基阱层和基于InGaAlAs的势垒层的半导体场致发光器件，在宽温度范围内具有高性能和高可靠性。解决方案：在该半导体电致发光器件的多量子阱层中，阱层和势垒层之间的界面处的界面应变值小于临界界面应变的值，取决于层厚度的值其中阱层的厚度和阻挡层的厚度之一更大。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010027936A Optical semiconductor element and manufacturing method thereof 审中-公开
标题翻译：光学半导体元件及其制造方法
公开(公告)号：JP2010027936A
公开(公告)日：2010-02-04
申请号：JP2008189279
申请日：2008-07-23
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KITATANI TAKESHI , TSUCHIYA TOMONOBU , MAKINO SHIGEKI , FUKAMACHI TOSHIHIKO
IPC分类号： H01S5/227 , H01L21/205 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To easily form Ru doping semi-insulating semiconductor layer having higher insulation with high reproducibility even under a growth environment in which a large amount of hydrogen exists in order to practically use a buried type optical semiconductor element using the Ru doping semi-insulating semiconductor layer. SOLUTION: During the growth of the Ru doping semi-insulating semiconductor layer, gas containing halogen atoms is added simultaneously with hydrogen independently of raw material gas of a compound semiconductor and carrier gas so as to suppress bonding between Ru and hydrogen. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了容易地形成具有高再现性的具有更高绝缘性的Ru掺杂半绝缘半导体层，即使在存在大量氢的生长环境下，为了实际使用掩埋型光半导体元件，使用 Ru掺杂半绝缘半导体层。解决方案：在Ru掺杂半绝缘半导体层的生长期间，独立于化合物半导体和载气的原料气体，与氢同时加入含有卤素原子的气体，以便抑制Ru与氢之间的键合。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009004488A Optical-integrated element and its manufacturing method 有权
标题翻译：光学元件及其制造方法
公开(公告)号：JP2009004488A
公开(公告)日：2009-01-08
申请号：JP2007162514
申请日：2007-06-20
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KITATANI TAKESHI , SHINODA KAZUNORI , SHIODA TAKASHI , MAKINO SHIGEKI , FUKAMACHI TOSHIHIKO
IPC分类号： H01S5/026
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： PROBLEM TO BE SOLVED: To solve the following problems that a crystal defect of a ridge-structure-type optical-integrated element easily happens due to a recess made in a BJ connection part by a mass transport phenomenon of an InP at the time of butt-joint (BJ) connection growth, and a disconnection of the BJ part occurs at the time of mesa etching to raise deterioration in element reliability and lower in manufacturing yield of the element.
SOLUTION: A protection layer comprising an InGaAsP is provided on the butt-connection part. The layer has a higher etching selectivity to the InP clad layer, so that it remains on the BJ connection after mesa etching.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了解决以下问题：由于在BJ连接部分中通过InP的传质现象产生的凹陷容易发生脊结构型光学集成元件的晶体缺陷对接时间（BJ）连接增长，并且在台面蚀刻时发生BJ部分的断开，从而引起元件可靠性的劣化并且元件的制造成品率降低。解决方案：在对接连接部分上设置包括InGaAsP的保护层。该层对InP包层具有更高的蚀刻选择性，使得其在台面蚀刻之后保持在BJ连接上。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008218849A Semiconductor optical device and manufacturing method therefor 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：JP2008218849A
公开(公告)日：2008-09-18
申请号：JP2007056538
申请日：2007-03-07
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： MAKINO SHIGEKI , SHINODA KAZUNORI , KITATANI TAKESHI
IPC分类号： H01S5/026 , G02B6/122 , G02F1/017
CPC分类号： H01S5/0265 , B82Y20/00 , H01L2224/48091 , H01S5/02276 , H01S5/02284 , H01S5/026 , H01S5/0425 , H01S5/06256 , H01S5/101 , H01S5/12 , H01S5/227 , H01S5/34306 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To solve the problems where the increase in the parasitic capacitance and the trade-off of pileup are the problems in a low reflection window structure in a conventional electroabsorption optical modulating element, because the capacitance density of a p-n junction in the window structure is high, as compared with a pin junction as an optical absorption region, also field application to the optical absorption region becomes insufficient, when an electrode structure is moved away from the bonding part of the optical absorption region and the window structure and the discharge of photocarriers generated in the optical absorption region becomes difficult. SOLUTION: Between the optical absorption region and the low light reflecting window structure, an undoped waveguide structure comprising such a composition wavelength and film thickness structure that the composition wavelength of each multilayer, constituting the waveguide structure is sufficiently shorter than signal light and the average refractive index is at the same level as the optical absorption region, is provided. When the electrode structure is formed so as to cross the junction interface of the optical absorption region and the undoped waveguide, and not to be over the junction interface of the undoped waveguide and the window structure, both of the increase of the parasitic capacitance due to the pn junction of the window structure and the pileup are suppressed simultaneously. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了解决传统的电吸收光调制元件中的寄生电容的增加和堆积的权衡是低反射窗结构中的问题的问题，因为pn的电容密度与窗口结构相比较，与作为光吸收区域的针结相比，当光吸收区域的场应用也变得不足时，当电极结构远离光吸收区域和窗口的接合部分移动时在光吸收区域中产生的光载流子的结构和放电变得困难。解决方案：在光吸收区域和低反射窗口结构之间，构成波导结构的组成波长和组成波长的组合波长和膜厚结构的未掺杂的波导结构足以比信号光短，平均折射率与光吸收区域相同。当电极结构形成为穿过光吸收区域和未掺杂波导的结界面，并且不在未掺杂波导和窗结构的结界面之上时，寄生电容的增加由于窗结构和堆积的pn结被同时抑制。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2011029595A Optical module, integrated semiconductor optical device, and method of manufacturing the same 审中-公开
标题翻译：光学模块，集成半导体光学器件及其制造方法
公开(公告)号：JP2011029595A
公开(公告)日：2011-02-10
申请号：JP2010095616
申请日：2010-04-19
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： HAYASHI HIROAKI , MAKINO SHIGEKI , KITATANI TAKESHI , TANAKA SHIGEHISA
IPC分类号： H01S5/026
CPC分类号： H01S5/0265 , B82Y20/00 , G02F1/2257 , H01L2224/48091 , H01L2224/48227 , H01L2924/19107 , H01S5/02248 , H01S5/02415 , H01S5/12 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/3072 , H01S5/3434 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an integrated optical semiconductor device and an optical module capable of high-speed and large-capacity optical transmission.
SOLUTION: In an integrated semiconductor optical device in which a plurality of optical device burried with semi-insulating materials are integrated on the same substrate and the optical module using the same, configurations (material and electrical characteristics) of burried layers are made different for each of the optical devices.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够进行高速和大容量光传输的集成光半导体器件和光模块。解决方案：在集成半导体光学器件中，将多个半绝缘材料的光学器件集成在同一衬底上，并且使用该半导体光学器件的光学模块，制造了被布置的层的构造（材料和电学特性）对于每个光学装置是不同的。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010141232A Semiconductor laser element 审中-公开
标题翻译：半导体激光元件
公开(公告)号：JP2010141232A
公开(公告)日：2010-06-24
申请号：JP2008318115
申请日：2008-12-15
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： FUKAMACHI TOSHIHIKO , KITATANI TAKESHI , SHIODA TAKASHI
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To improve reliability of a refractive index coupling type DFB laser element having a diffraction grating formed of InGaAsP having a higher refractive index than InP formed in an InP layer.
SOLUTION: A lattice constant of InGaAsP in a bulk state constituting a diffraction grating layer of the refractive index coupling type DFB laser element is made shorter than that of InP. Thus, light emission by a natural discharge process of a carrier accumulated in the diffraction grating layer is easily suppressed. Carrier loss is reduced and a power consumption increase by a rise of electric resistance due to notch formation is reduced.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提高折射率耦合型DFB激光元件的可靠性，其具有由具有比在InP层中形成的InP更高的折射率的InGaAsP形成的衍射光栅。解决方案：构成折射率耦合型DFB激光元件的衍射光栅层的体状的InGaAsP的晶格常数比InP短。因此，容易抑制在衍射光栅层中积聚的载体的自然放电处理的发光。载流子损失减少，并且由于陷波形成导致的电阻上升而导致的功率消耗增加。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010239056A Semiconductor element and method of manufacturing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：JP2010239056A
公开(公告)日：2010-10-21
申请号：JP2009087641
申请日：2009-03-31
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SASADA NORIKO , NAOE KAZUHIKO , MAKINO SHIGEKI , KITATANI TAKESHI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide an uncooled-type electro-absorption modulator-integrated distributed feedback laser that can perform long distance transmission at high speed. SOLUTION: A semiconductor material and mesa structure in an active layer located in a modulator unit are optimized. The ranges of a compatible value of a gain peak wavelength in a laser unit and a compatible value of a photoluminescence wavelength in the modulator unit are obtained with regard to an oscillation wavelength of the laser unit at a predetermined temperature. It is designed so that the values thereof fall within the ranges, thereby manufacturing the laser unit and modulator unit. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以高速执行长距离传输的非冷却型电吸收调制器集成分布反馈激光器。解决方案：优化位于调制器单元中的有源层中的半导体材料和台面结构。关于激光单元在预定温度下的振荡波长，获得激光单元中的增益峰值波长的兼容值和调制器单元中的光致发光波长的兼容值的范围。其设计使其值落在范围内，从而制造激光单元和调制器单元。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010165759A Method of manufacturing integrated optical device 有权
标题翻译：制造集成光学器件的方法
公开(公告)号：JP2010165759A
公开(公告)日：2010-07-29
申请号：JP2009005299
申请日：2009-01-14
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SHINODA KAZUNORI , KITATANI TAKESHI , MAKINO SHIGEKI , SHIODA TAKASHI
IPC分类号： H01S5/026 , H01S5/125 , H01S5/227 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated optical element having three or more optical element portions integrated by butt joint technique, in which the integrated optical device having small optical loss and high optical coupling efficiency is achieved by suppressing film thickness unevenness nearby a butt joint connection portion and a crystal defect of a multiple quantum well structure nearby the butt joint connection portion. SOLUTION: In the method of manufacturing the integrated optical element having the three or more optical element portions integrated in a manner of connecting them one after another by using the butt joint technique twice or more, a dielectric mask pattern used for the second butt joint process is shaped such that a tip portion is made thinner. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决方案：提供一种具有通过对接技术集成的三个或更多个光学元件部分的集成光学元件的制造方法，其中具有小的光学损耗和高的光耦合效率的集成光学器件通过抑制对接连接部附近的膜厚不均匀性和对接连接部附近的多量子阱结构的晶体缺陷。解决方案：在制造具有三个或更多个光学元件部分的集成光学元件的方法中，通过使用两次或更多次的对接技术将它们一个接一个地连接起来，用于第二个的电介质掩模图案对接工序被成形为使得末端部分变薄。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009130030A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2009130030A
公开(公告)日：2009-06-11
申请号：JP2007301662
申请日：2007-11-21
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KITATANI TAKESHI , SHINODA KAZUNORI , ADACHI KOICHIRO , AOKI MASAHIRO
IPC分类号： H01S5/16
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To solve the problem that operating current increases by current leak in a window part in a ridge structure-type end surface light emitting laser having a window region, especially in a short resonator-type laser with small operating current.
SOLUTION: In the window region, a semi-insulating semiconductor layer to which Ru is doped is inserted between an n-type substrate and a p-type cladding layer, or a laminated structure of the layer to which Ru is doped and a Fe doped layer is introduced.
COPYRIGHT: (C)2009,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式