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1. 发明专利

JP2008021749A Magnetoresistive element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁性元件，磁头和磁性再生装置
公开(公告)号：JP2008021749A
公开(公告)日：2008-01-31
申请号：JP2006190846
申请日：2006-07-11
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI , SAHASHI MASASHI , DOI MASAAKI , MIYAKE KOSAKU
IPC分类号： H01L43/08 , G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a vertical power-feeding magnetoresistive element simultaneously attaining adequate resistance value and high resistance variation rate in the magnetic resistance using nano-contact between magnetic materials.
SOLUTION: The magnetoresistive effect element is provided with a magnetoresistive effect film having a magnetization fixing layer including a first ferromagnetic material film that is substantially fixed in one magnetizing direction, a free magnetizing layer including a second ferromagnetic material film that is changed in the magnetizing direction corresponding to an external magnetic field, a composite spacer layer arranged between the magnetization fixing layer and free magnetizing layer and including an insulating layer and a ferromagnetic metal part provided through this insulating layer, a pair of electrodes for feeding a sense current in the vertical direction to the film surface of the magnetoresistive effect film, and an anti-ferromagnetic element that is arranged in at least one of the magnetization fixing layer and free magnetizing layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直供电磁阻元件，同时在磁性材料之间使用纳米接触获得足够的电阻值和高电阻变化率的磁阻。解决方案：磁阻效应元件设置有具有磁化固定层的磁阻效应膜，磁化固定层包括基本上固定在一个磁化方向上的第一铁磁材料膜，包括在第二铁磁材料膜中变化的自由磁化层与外部磁场相对应的磁化方向，配置在磁化固定层和自由磁化层之间的复合间隔层，并且包括绝缘层和通过该绝缘层设置的强磁性金属部分;一对电极，磁阻效应膜的膜表面的垂直方向，以及布置在磁化固定层和自由磁化层中的至少一个中的反铁磁性元件。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007188946A Magnetoresistive element and method of manufacturing same, magnetic head, magnetic reproducing device, and magnetic memory using magnetoresistive element 有权
标题翻译：磁性元件及其制造方法，磁头，磁性再现装置和使用磁性元件的磁记忆
公开(公告)号：JP2007188946A
公开(公告)日：2007-07-26
申请号：JP2006003666
申请日：2006-01-11
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： HASHIMOTO SUSUMU , FUKUYA HIROMI , IWASAKI HITOSHI , DOI MASAAKI , MIYAKE KOSAKU , SAHASHI MASASHI
IPC分类号： H01L43/10 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3929 , G11B5/398 , G11C11/16 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To form fine magnetic regions of nano-size with excellent reproducibility and controllability to part of an intermediate layer of the magnetoresistive element having a CPP structure.
SOLUTION: The magnetoresistive element 1 includes a magnetization pinned layer 5, a magnetization free layer 7, and a magnetoresistive film 2 provided between these layers 5, 7 and having a magnetic region 11 and an intermediate layer 6 having a non-magnetic region 12 showing an electric resistance higher than that of the magnetic region 11. A sense current is fed in a direction substantially perpendicular to the film surface of the magnetoresistive film 2. The magnetic region 11 of the intermediate layer 6 is locally extended through the non-magnetic region 12 in a direction perpendicular to the film surface. The non-magnetic region 12 of such intermediate layer 6 includes a non-magnetic metal element having the surface energy higher than that of the magnetic metal element included in the magnetic region 11.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了形成具有CPP结构的磁阻元件的中间层的一部分的具有优异的再现性和可控性的纳米尺寸的细磁区域。解决方案：磁阻元件1包括磁化固定层5，磁化自由层7和设置在它们之间的磁阻膜2，并具有磁性区域11和具有非磁性的中间层6 区域12表现出高于磁性区域11的电阻。感测电流在基本垂直于磁阻膜2的膜表面的方向上进给。中间层6的磁性区域11通过非磁性膜局部延伸， - 磁区12在垂直于膜表面的方向上。这种中间层6的非磁性区域12包括表面能高于包含在磁性区域11中的磁性金属元素的表面能的非磁性金属元素。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006319343A Magnetoresistance effect element, magnetic head, and magnetic reproduction device 有权
标题翻译：磁阻效应元件，磁头和磁性再生器件
公开(公告)号：JP2006319343A
公开(公告)日：2006-11-24
申请号：JP2006143284
申请日：2006-05-23
申请人： Toshiba Corp , 株式会社東芝
发明人： KAMIGUCHI YUZO , YUASA HIROMI , NAGATA TOMOHIKO , YODA HIROAKI , KOUI KATSUHIKO , YOSHIKAWA MASATOSHI , IWASAKI HITOSHI , SAHASHI MASASHI , TAKAGISHI MASAYUKI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/08 , H01L21/8246 , H01L27/105 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a practical magnetoresistance effect element having an appropriate resistance value, high sensitivity, and a small number of magnetic materials to be controlled, and also to provide a magnetic head and a magnetic reproduction device using the element.
SOLUTION: A magnetoresistance effect element, in which a sensor current is flowed in a direction perpendicular to a film surface, has an electron reflection layer on at least one of a pin layer, free layer, or nonmagnetic intermediate layer. The electron reflection layer may include an oxide, a nitride, a fluoride, or a carbide. Through effectively using a spin-dependent scattering effect, a practical magnetoresistance effect element is formed, which has an appropriate resistance value, high sensitivity, and a small number of magnetic materials to be controlled.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有适当电阻值，高灵敏度和少量待控制的磁性材料的实用磁阻效应元件，并且还提供使用该元件的磁头和磁性再现装置。解决方案：传感器电流在垂直于膜表面的方向上流动的磁阻效应元件在引脚层，自由层或非磁性中间层中的至少一个上具有电子反射层。电子反射层可以包括氧化物，氮化物，氟化物或碳化物。通过有效地使用自旋依赖散射效应，形成具有适当的电阻值，高灵敏度和少量待控制的磁性材料的实用的磁阻效应元件。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2005340838A Magnetic material 有权
标题翻译：磁性材料
公开(公告)号：JP2005340838A
公开(公告)日：2005-12-08
申请号：JP2005157417
申请日：2005-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO AKIKO , KOBAYASHI TADAHIKO , SAWA TAKAO , SAHASHI MASASHI
IPC分类号： C22C22/00 , C22C38/00 , H01F1/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic material capable of realizing magnetic refrigeration using a comparatively low magnetic field made by permanent magnet in an ordinary temperature region. SOLUTION: A magnetic material has a flexion point at which a twice differential coefficient to the magnetic field of a magnetization curve changes to negative from positive within the limit of the magnetic field made by permanent magnet in some temperature region, preferably in the part of the temperature region of 200K or more and 350K or less. According to the magnetic material, low temperature is can be generated using a comparatively low magnetic field by allowing an electronic magnetism spin system and a trellis system to mutually carry out the transfer of entropy at temperatures near a temperature at which the flexion point arises in the magnetization curve. The magnetic material compatible to the above condition includes, for example, La (Fe, Si) 13 , (Hf, Ta)Fe 2 , (Ti, Sc)Fe 2 , and (Nb, Mo)Fe 2 containing equal to or more than 50-60 atom% transition metal such as Fe. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在常温区域使用由永磁体制成的较低磁场实现磁致冷的磁性材料。解决方案：磁性材料具有弯曲点，在该屈曲点处，磁化曲线的磁场的两倍微分系数在由某些温度区域中的永磁体制成的磁场的极限内变为负的，优选地在温度区域的一部分为200K以上且350K以下。根据磁性材料，通过允许电子磁旋转系统和网格系统在靠近温度的温度附近相互进行熵的转移，可以使用相对低的磁场产生低温，磁化曲线。与上述条件相容的磁性材料包括例如La（Fe，Si）SB 13，（Hf，Ta）Fe SB 2，（Ti，Sc）Fe < SB> 2 和含有等于或大于50-60原子％的过渡金属如Fe的（Nb，Mo）Fe 2 。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2003060263A Magnetoresistive effect element, magnetic head, and magnetic reproducer 有权
标题翻译：磁感应元件，磁头和磁性复制器
公开(公告)号：JP2003060263A
公开(公告)日：2003-02-28
申请号：JP2001246583
申请日：2001-08-15
申请人： Toshiba Corp , 株式会社東芝
发明人： YUASA HIROMI , KAMIGUCHI YUZO , YOSHIKAWA MASAHISA , KOUI KATSUHIKO , IWASAKI HITOSHI , NAGATA TOMOHIKO , SAKAKUBO TAKEO , SAHASHI MASASHI
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element with a large variation range in resistance, a magnetic head with the magnetoresistive effect element, and a magnetic reproducer with respect to a vertical conducting type magnetoresistive element having a pin valve structure. SOLUTION: In a spin valve type element, an interface insertion layer (32 or 34), made of material with large spin dependent interface scattering, is inserted at a magnetized fixed layer (16) or a magnetized free layer (20) on the side of a nonmagnetic intermediate layer (18). In addition, when a nonmagnetic back face layer (36) is inserted in an interface on the side which is not in contact with the nonmagnetic intermediate layer, a spin-dependent interface scattering at an interface of magnetized fixed layer/nonmagnetic back face layer or at an interface of magnetized free layer/nonmagnetic back face layer is available, and the output can be increased.
摘要翻译：要解决的问题：提供一种电阻变化范围大的磁阻效应元件，具有磁阻效应元件的磁头和相对于具有销阀结构的垂直导电型磁阻元件的磁性再现器。解决方案：在自旋阀型元件中，由具有大自旋相关界面散射的材料制成的界面插入层（32或34）插入在磁化固定层（16）或侧面上的磁化自由层（20）的非磁性中间层（18）。此外，当非磁性背面层（36）插入在与非磁性中间层不接触的一侧的界面中时，在磁化固定层/非磁性背面层的界面处的自旋相关界面在磁化自由层/非磁性背面层的界面是可用的，并且可以增加输出。

6. 发明专利

JP2008283197A Magnetoresistive effect device, magnetoresistive effect head and magnetic recording/reproducing device 有权
标题翻译：磁感应效应装置，磁阻效应头和磁记录/再现装置
公开(公告)号：JP2008283197A
公开(公告)日：2008-11-20
申请号：JP2008137210
申请日：2008-05-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YUASA HIROMI , YOSHIKAWA MASAHISA , IWASAKI HITOSHI , KAMIGUCHI YUZO , SAHASHI MASASHI , FUKUZAWA HIDEAKI
IPC分类号： H01L43/08 , C22C19/07 , C22C38/00 , C22C38/10 , G01R33/09 , G11B5/012 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： PROBLEM TO BE SOLVED: To arrange an appropriate material in at least one layer of a pinned layer and a free layer to increase a resistance change in a vertical excitation magnetoresistive effect device of a spin-valve structure. SOLUTION: Provided is a giant magnetoresistive effect device characterized by: a magnetization pinned layer having the direction of magnetization pinned substantially to one direction; a magnetization free layer having the direction of magnetization changed depending on an external magnetic field; a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and electrodes adapted for making a sense current conductive in the direction substantially perpendicular to surfaces of the films of the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer in which the magnetized pinned layer has substantially such a structure that two or more layers formed of bimetallic alloys represented by a general formula (i) Fe a Co 100-a (where 25 atom%≤a≤75 atom%) and (ii) one or more layers formed of Cu each as thick as 0.1 nm to 1 nm are alternately stacked. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在至少一层被钉扎层和自由层中布置适当的材料以增加自旋阀结构的垂直激励磁阻效应装置中的电阻变化。解决方案：提供了一种巨磁阻效应器件，其特征在于：具有大致向一个方向固定的磁化方向的磁化固定层; 具有磁化方向的磁化自由层根据外部磁场而变化; 形成在磁化被钉扎层和无磁化层之间的非磁性中间层; 以及适于使感应电流在基本上垂直于磁化被钉扎层，非磁性中间层和磁化自由层的表面的方向上导电的电极，其中磁化钉扎层具有基本上这样的结构，即两层或多层由通式（i）表示的双金属合金形成，其中25原子％≤a≤75原子％，和（ii）一种或多种交替堆叠由厚度为0.1nm至1nm的Cu形成的更多层。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007059927A Magnetoresistance efect element, magnetic head, and magnetic reproducing device 有权
标题翻译：磁阻元件，磁头和磁性再生装置
公开(公告)号：JP2007059927A
公开(公告)日：2007-03-08
申请号：JP2006266788
申请日：2006-09-29
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZAWA HIDEAKI , YUASA HIROMI , FUKUYA HIROMI , IWASAKI HITOSHI , SAHASHI MASASHI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105
CPC分类号： H01F10/1936 , G01R33/093 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H01F41/302 , H01F41/325
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which has a large resistance variation quantity as a current-perpendicular-to-plane magnetoresistance element, to provide a magnetic head which uses the same and a magnetic reproducing device. SOLUTION: Spin filter effect of electrons can be obtained by modulating the band structure of a ferromagnetic layer nearby a very thin film layer made of oxide or nitride by inserting the thin film layer into a ferromagnetic layer of the magnetoresistance effect element or the interface between the ferromagnetic layer and a nonmagnetic spacer layer. Consequently, the magnetoresistance effect element can be provided which has a high MR variation rate within a temperature range of room temperature or above it without increasing the element resistance. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有大电阻变化量的磁阻效应元件作为电流垂直于平面的磁阻元件，以提供使用该磁阻效应元件的磁头和磁再现装置。解决方案：通过将薄膜层插入到磁阻效应元件的铁磁层中，通过调制由氧化物或氮化物制成的非常薄的薄膜层附近的铁磁层的带结构，可以获得电子的自旋滤光器效应铁磁层和非磁性间隔层之间的界面。因此，可以提供在室温以上的温度范围内具有高MR变化率的磁阻效应元件，而不增加元件电阻。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006041511A Antiferromagnetic film, exchange-coupling film using the same, magnetoresistance-effect element, and magnetic device 有权
标题翻译：抗静电膜，使用其的交换耦合膜，磁阻效应元件和磁性装置
公开(公告)号：JP2006041511A
公开(公告)日：2006-02-09
申请号：JP2005204355
申请日：2005-07-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： H01F10/12 , C22C22/00 , G01R33/09 , G11B5/39 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To stably obtain an adequate exchange-coupling force at room temperature and in a high temperature range by stabilizing the film composition and the film quality of an antiferromagnetic film which is composed of an Mn alloy and is excellent in corrosion resistivity and thermal property.
SOLUTION: The antiferromagnetic film contains Mn of 20 to 95 atomic per cent, while the remainder is substantially at least one of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The antiferromagnetic film comprises at least one member selected from among an alloy phase and a compound phase formed between the R element and Mn, and is formed by sputtering using a sputtering target in which no single-phase Mn grain having the maximum grain size exceeding 50 μm exists. The divergence of the composition of the antiferromagnetic film from that of the sputtering target is less than 10 atomic per cent. The antiferromagnetic film 3 is laminated with a ferromagnetic film 4 to constitute the exchange-coupling film 2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过稳定由Mn合金构成的反铁磁膜的膜组成和膜质量，在室温和高温范围内稳定地获得适当的交换耦合力，并且在耐腐蚀性和热性能。反铁磁性膜含有20〜95原子％的Mn，余量基本上为选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta， Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re。反铁磁膜包括选自合金相和形成在R元素和Mn之间的化合物相中的至少一种，并且通过使用不具有超过50的最大粒径的单相Mn晶粒的溅射靶进行溅射而形成存在。反铁磁膜的组成与溅射靶的组成的差异小于10原子％。反铁磁膜3与铁磁膜4层叠以构成交换耦合膜2.版权所有：（C）2006，JPO＆NCIPI

9. 发明专利

JP2005060844A Production method for antiferromagnetic film 有权
标题翻译：抗生素膜生产方法
公开(公告)号：JP2005060844A
公开(公告)日：2005-03-10
申请号：JP2004265938
申请日：2004-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/34 , G11B5/39 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide an antiferromagnetic film which is made of a Mn alloy excellent in corrosion resistance and thermal properties, has stable composition and qualities, and can have a stable and sufficient switching connection power at room temperature and also in a high-temperature range.
SOLUTION: The method for producing the antiferromagnetic film comprises a process wherein an R-Mn antiferromagnetic film 3 is formed by using a sputtering target consisting of 10-98 atom% Mn and the balance substantially being at least one R atom selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target has a target structure wherein at least one kind of phase selected from among an alloy phase and a compound phase of the R element and Mn is contained as at least a part of the structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供由耐腐蚀性和热性能优异的Mn合金制成的反铁磁膜，其组成和质量稳定，并且可以在室温下具有稳定和充分的开关连接功率高温范围。反铁磁膜的制造方法包括使用由10-98原子％的Mn构成的溅射靶，其余基本上为至少一个选自以下的R原子的R-Mn反铁磁膜3 在Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re中。溅射靶具有目标结构，其中至少一种选自合金相和R元素的化合物相和Mn的相作为结构的至少一部分。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2003298144A Magnetoresistive effect element, manufacturing method therefor, magnetic head and magnetic reproducing device 有权
标题翻译：磁电效应元件及其制造方法，磁头和磁性再生装置
公开(公告)号：JP2003298144A
公开(公告)日：2003-10-17
申请号：JP2002095514
申请日：2002-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： HASHIMOTO SUSUMU , FUNAYAMA TOMOKI , SAKAKUBO TAKEO , SAHASHI MASASHI
IPC分类号： G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element of large magnetoresistance variation and stable characteristic by smoothly forming a magnetoresistive effect film even on a protruding part of a lower electrode, related to a current perpendicular to plane-magnetoresistive effect element, and to provide a method for manufacturing the element, a magnetic head and a magnetic reproducing device using the magnetoresistive effect element. SOLUTION: The magnetoresistive effect element comprises a lower electrode (2a) having a protruding part (P) protruding upward, an insulating layer (3a) that is so provided as to enclose the protruding part, a smoothed conductive layer (5) whose top surface is almost smoothly formed while burying unevenness caused on the protruding part and the surface of the insulating layer around it, a magnetoresistive effect film (6) laminated on the almost smooth top surface (5B) of the smoothed conductive layer, and an upper electrode (2b) provided on the magnetoresistive effect film. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：即使在与垂直于平面磁阻效应元件的电流相关的下电极的突出部分上平滑地形成磁阻效应膜来提供具有大的磁阻变化和稳定特性的磁阻效应元件，并提供使用该磁阻效应元件的元件，磁头和磁再现装置的制造方法。解决方案：磁阻效应元件包括具有向上突出的突出部分（P）的下电极（2a），设置为包围突出部分的绝缘层（3a），平滑的导电层（5）其上表面几乎平滑地形成，同时在其周围的突出部分和绝缘层的表面上埋入不均匀;层压在平滑导电层的几乎平滑的顶表面（5B）上的磁阻效应膜（6），以及设置在磁阻效应膜上的上电极（2b）。版权所有（C）2004，JPO

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