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1. 发明专利

JP2005223327A Manufacturing method of antiferromagnetic film, manufacturing method of exchange coupling film, manufacturing method of magnetoresistance effect element, and manufacturing method of magnetic device 有权
标题翻译：抗交换膜的制造方法，交联膜的制造方法，磁阻效应元件的制造方法和磁性装置的制造方法
公开(公告)号：JP2005223327A
公开(公告)日：2005-08-18
申请号：JP2005023105
申请日：2005-01-31
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/14 , C23C14/34 , G11B5/39 , H01F10/16 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To stabilize a film composition and film quality of an antiferromagnetic film, and to obtain stably a full exchange coupling force at room temperature and high temperature, when forming the anti-ferromagnetic film composed of a Mn alloy of superior corrosion resistance and thermal characteristics.
SOLUTION: The antiferromagnetic film manufacturing method has a process of sputter-forming the anti-ferromagnetic film 3 which contains Mn of 10-98% in atom, its remainder substantially is composed of at least one kind of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re, has at least one kind selected between an alloy phase and compound phase of the R element and Mn as at least a part of target composition, and has a film composition whose composition deviation from a sputtering target is ≤10 atm%, by using the sputtering target, where a single phase of Mn particle larger than 50 μm in the maximum diameter does not exist.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了稳定反铁磁膜的膜组成和膜质量，并且在室温和高温下稳定地获得全交换耦合力，当形成由Mn合金构成的反铁磁膜时优良的耐腐蚀性和热特性。反铁磁性膜制造方法具有溅射形成含有10-98％原子的Mn的反铁磁性膜3的工序，其余部分基本上由选自以下的至少一种R元素组成： Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re中至少有一种选自合金相和化合物相的R元素和Mn作为目标组成的至少一部分，并且具有通过使用溅射靶的溅射靶的组成偏差≤10atm％的膜组成，其中Mn粒子的单相大于50μm 在最大直径不存在。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006041511A Antiferromagnetic film, exchange-coupling film using the same, magnetoresistance-effect element, and magnetic device 有权
标题翻译：抗静电膜，使用其的交换耦合膜，磁阻效应元件和磁性装置
公开(公告)号：JP2006041511A
公开(公告)日：2006-02-09
申请号：JP2005204355
申请日：2005-07-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： H01F10/12 , C22C22/00 , G01R33/09 , G11B5/39 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To stably obtain an adequate exchange-coupling force at room temperature and in a high temperature range by stabilizing the film composition and the film quality of an antiferromagnetic film which is composed of an Mn alloy and is excellent in corrosion resistivity and thermal property.
SOLUTION: The antiferromagnetic film contains Mn of 20 to 95 atomic per cent, while the remainder is substantially at least one of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The antiferromagnetic film comprises at least one member selected from among an alloy phase and a compound phase formed between the R element and Mn, and is formed by sputtering using a sputtering target in which no single-phase Mn grain having the maximum grain size exceeding 50 μm exists. The divergence of the composition of the antiferromagnetic film from that of the sputtering target is less than 10 atomic per cent. The antiferromagnetic film 3 is laminated with a ferromagnetic film 4 to constitute the exchange-coupling film 2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过稳定由Mn合金构成的反铁磁膜的膜组成和膜质量，在室温和高温范围内稳定地获得适当的交换耦合力，并且在耐腐蚀性和热性能。反铁磁性膜含有20〜95原子％的Mn，余量基本上为选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta， Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re。反铁磁膜包括选自合金相和形成在R元素和Mn之间的化合物相中的至少一种，并且通过使用不具有超过50的最大粒径的单相Mn晶粒的溅射靶进行溅射而形成存在。反铁磁膜的组成与溅射靶的组成的差异小于10原子％。反铁磁膜3与铁磁膜4层叠以构成交换耦合膜2.版权所有：（C）2006，JPO＆NCIPI

3. 发明专利

JP2005060844A Production method for antiferromagnetic film 有权
标题翻译：抗生素膜生产方法
公开(公告)号：JP2005060844A
公开(公告)日：2005-03-10
申请号：JP2004265938
申请日：2004-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/34 , G11B5/39 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide an antiferromagnetic film which is made of a Mn alloy excellent in corrosion resistance and thermal properties, has stable composition and qualities, and can have a stable and sufficient switching connection power at room temperature and also in a high-temperature range.
SOLUTION: The method for producing the antiferromagnetic film comprises a process wherein an R-Mn antiferromagnetic film 3 is formed by using a sputtering target consisting of 10-98 atom% Mn and the balance substantially being at least one R atom selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target has a target structure wherein at least one kind of phase selected from among an alloy phase and a compound phase of the R element and Mn is contained as at least a part of the structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供由耐腐蚀性和热性能优异的Mn合金制成的反铁磁膜，其组成和质量稳定，并且可以在室温下具有稳定和充分的开关连接功率高温范围。反铁磁膜的制造方法包括使用由10-98原子％的Mn构成的溅射靶，其余基本上为至少一个选自以下的R原子的R-Mn反铁磁膜3 在Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re中。溅射靶具有目标结构，其中至少一种选自合金相和R元素的化合物相和Mn的相作为结构的至少一部分。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JPS6272498A NICKEL-COPPER ALLOY FOR BRAZING TITANIUM MATERIAL 失效
公开(公告)号：JPS6272498A
公开(公告)日：1987-04-03
申请号：JP21027885
申请日：1985-09-25
申请人： TOSHIBA CORP
发明人： MAKUUCHI SHOJI , KATSUI NOBUO , KUZE TAKASHI
IPC分类号： B23K35/30 , B23K35/32 , C22C9/06 , C22C19/03
摘要： PURPOSE:To form a brazed part having good wettability, high brazing strength and excellent corrosion resistance and workability by brazing a Ti material by a brazing filler metal contg. a specific ratio each of Ni and Mn and consisting of the balance Cu, thereby forming an eutectic alloy with Ti. CONSTITUTION:The Ti material is brazed by the Cu-base brazing filler metal contg. 30-50wt% Ni at which the corrosion resistance is improved and 0.01-5wt% Mn at which the workability is improved, the cracking in the welding stage is prevented and the corrosion resistance is not deteriorated. The eutectic alloy with Ti is formed at a relatively low temp. (770-880 deg.C) in this stage to improve the wettability of the brazing filler metal and to increase the brazing strength. The brazed Ti part having the excellent corrosion resistance and workability and good appearance is thus obtd.

5. 发明专利

JPH09324243A LOW THERMAL EXPANSION ALLOY HAVING COEFFICIENT OF THERMAL EXPANSION APPROXIMATE TO THAT OF SI 失效
公开(公告)号：JPH09324243A
公开(公告)日：1997-12-16
申请号：JP14158596
申请日：1996-06-04
申请人： TOSHIBA CORP
发明人： NAKAJIMA NOBUAKI , KATSUI NOBUO
IPC分类号： G01L9/04 , C22C38/00 , C22C38/10 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To approximate a coefficient of thermal expansion of a low thermal expansion Ni-Co-Fe alloy to that of Si by specifying the composition of the low thermal expansion Ni-Co-Fe alloy used, e.g. for a pedestal of a pressure sensor using a diffusion semiconductor strain gage. SOLUTION: This alloy has a composition consisting of, by weight ratio, 36-40% Ni, 1-5% Co, and the balance Fe with inevitable impurities and satisfying Ni+Co=39 to 42%. Further, the coefficient of thermal expansion of the ally is regulated to (20 to 40)×10 / deg.C in any range of 30-100 deg.C, 30-200 deg.C, and 30-300 deg.C, and the magnetic transformation point of this alloy is >=300 deg.C. Moreover, it is preferable that, from the view point of the degree of freedom with respect to joining material and joining method, the magnetic transformation point is regulated to >=330 deg.C by properly selecting the composition ratio of the alloy.

6. 发明专利

JP2000160332A SPUTTERING TARGET, ANTIFERROMAGNETIC FILM FORMED BY USING THE SAME, MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC DEVICE 失效
公开(公告)号：JP2000160332A
公开(公告)日：2000-06-13
申请号：JP15285999
申请日：1999-05-31
申请人： TOSHIBA CORP
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/06 , C23C14/14 , C23C14/34 , G11B5/39 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To reproducibly form an antiferromagnetic film capable of stably yielding sufficient exchange coupling force at room temp. and high temp. by using a sputtering target capable of stabilizing the film compsn. and film quality of an antiferromagnetic film at the time of forming an antiferromagnetic Mn alloy film excellent in corrosion resistance and thermal characteristics by a sputtering method. SOLUTION: This invention relates to a sputtering target substantially consisting of at least one R element selected from the good of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W and Re and Mn, and, the content of oxygen in the target is controlled to

7. 发明专利

JPH11186019A MAGNETIC SHIELDING PART 失效
公开(公告)号：JPH11186019A
公开(公告)日：1999-07-09
申请号：JP34817197
申请日：1997-12-17
申请人： TOSHIBA CORP
发明人： NAGASAKI KIYOSHI , TAKADO TEIJI , KATSUI NOBUO
IPC分类号： C22C19/03 , G11B5/10 , G11B5/11 , H01F1/147
摘要： PROBLEM TO BE SOLVED: To greatly improve hot workability of magnetic shielding parts, without deteriorating the magnetic characteristic of the parts by forming the parts of a magnetic alloy containing nickel, copper, manganese, silicon, aluminum, magnesium, molybdenum, and iron which are mixed with each other at a specific wt.%. SOLUTION: Magnetic shielding parts 2 are formed of a magnetic alloy, containing about 55-85 wt.% nickel, about 0.5 to 3 wt.% copper, about 3 to 27 wt.% manganese, about 0.02 to 2% silicon, about 0 to 8 wt.% molybdenum, about 0.001 to 0.05 wt.% aluminum, about 0.001-0.03 wt.% magnesium, and the balance substantially iron. In order to further improve hot workability of the parts, in addition, it is possible to add various kinds of elements, such as titanium, zirconium, calcium, boron, carbon, etc., and other deoxidizers and desulfurizing agents to the alloy at about 1 wt.% or lower. Therefore, the hot workability of the magnetic shielding parts can be improved greatly, without impairing the magnetic shielding property and weldability of the parts.

8. 发明专利

JP2003217962A ANTIFERROMAGNETIC MATERIAL FILM, MAGNETORESISTIANCE EFFECT ELEMENT AND MAGNETIC DEVICE USING THE SAME 审中-公开
公开(公告)号：JP2003217962A
公开(公告)日：2003-07-31
申请号：JP2002316414
申请日：2002-10-30
申请人： TOSHIBA CORP
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/34 , G11B5/39 , H01F10/12 , H01F10/32 , H01F41/18 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To realize stabilization of film composition and film quality and also to stably obtain sufficient exchange coupling force under the room temperature and higher temperature range, in an antiferromagnetic material film, consisting of the Mn alloy which exhibits superior corrosion resistance and thermal characteristics. SOLUTION: The antiferromagnetic material film is formed by sputtering process, using a sputtering target including Mn of 10 to 98 atom.% and a remainder which is substantially composed of at least one kind of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W and Re. Deviation of composition from the sputtering target has a film composition of 10 atom.% or less. The antiferromagnetic material film 3 forms the exchange coupling film 2 through lamination with the ferromagnetic material film 4. COPYRIGHT: (C)2003,JPO

9. 发明专利

JPH01245937A BLANK STOCK FOR WORKING HEADER 失效
公开(公告)号：JPH01245937A
公开(公告)日：1989-10-02
申请号：JP7211788
申请日：1988-03-28
申请人： TOSHIBA CORP
发明人： KATSUI NOBUO , MATSUNAGA MITSUHIRO , SUGAI HIROZO
IPC分类号： B21J1/00 , B21J5/00 , B21K1/46 , C22C19/05 , C22C38/00 , C22C38/08 , C22C38/40
摘要： PURPOSE:To prevent the adhesion of the surface of a blank stock and the die inner surface by setting the surface roughness at more than specified value on the metal blank stock used for heading of forming the end part of the metal stock in specified shape by pressing it by a die in the axial direction or radial direction. CONSTITUTION:A metal material is of the Fe-Ni alloy contg. 33-55wt.% Ni and Fe-Ni-Co alloy, etc. The surface roughness of the metal stock is set in >=2mum at the max. height (R max) reference. The bar-like metal stock 2 cut in specified length is fixed by inserting to a die 1 and the head part 4 in specified shape is formed by compressing this metal stock 2 by pressurizing in the axial direction by a punch 3. At the time when the surface roughness of the metal stock is set in >=2mum, the lubrication function of a lubricant is maintained for long time. The seizure phenomenon of the die and metal stock is thus prevented effectively, the workability of the stock is improved and the die life can drastically to extended.

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