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1. 发明专利

JP2012203916A Magnetic head, magnetic head assembly, and magnetic recording and reproducing device 审中-公开
标题翻译：磁头，磁头组件和磁记录和再现装置
公开(公告)号：JP2012203916A
公开(公告)日：2012-10-22
申请号：JP2011064252
申请日：2011-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： IWASAKI HITOSHI , TAKAGISHI MASAYUKI , YAMADA KENICHIRO , HASHIMOTO SUSUMU , TOMOTA YUSUKE
IPC分类号： G11B5/39 , G11B5/02 , G11B5/31 , H01L29/82 , H01L43/08
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/1278 , G11B2005/0002 , G11B2005/0008 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , Y10T428/11
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect type magnetic head, a magnetic head assembly and a magnetic recording and reproducing device, each having suppressed noise.SOLUTION: A magnetic head having a reproduction portion is provided. The reproduction portion detects a medium magnetic field recorded in a magnetic recording medium. The reproduction portion includes a laminated film and a magnetic field application portion. The laminated film includes a first magnetization fixed layer and a magnetization free layer. The first magnetization fixed layer has vertical magnetic anisotropy, and has magnetization fixed thereto. The magnetization free layer is laminated along the first magnetization fixed layer and a first axis and performs spin torque oscillation. The magnetic field application portion is laminated along the laminated film and the first axis and applies a bias magnetic field having a component along the first axis to the laminated film. When a current equal to or more than a value allowing the magnetization free layer to perform the spin torque oscillation flows from the first magnetization fixed layer to the magnetization free layer, the resistance of the laminated film changes according to the medium magnetic field.
摘要翻译：要解决的问题：提供具有抑制噪声的磁阻效应型磁头，磁头组件和磁记录和再现装置。解决方案：提供具有再现部分的磁头。再现部分检测记录在磁记录介质中的介质磁场。再现部分包括层压膜和磁场施加部分。层压膜包括第一磁化固定层和无磁化层。第一磁化固定层具有垂直的磁各向异性，并且固定有磁化。磁化自由层沿着第一磁化固定层和第一轴层压，并进行自旋转矩振荡。沿着层叠膜和第一轴层叠磁场施加部，将具有沿着第一轴的分量的偏置磁场施加到层叠膜。当使等于或大于允许磁化自由层执行自旋扭矩振荡的值从第一磁化固定层流向无磁化层时，层压膜的电阻根据介质磁场而变化。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011158356A Defect inspection device and defect inspection method 审中-公开
标题翻译：缺陷检查装置和缺陷检查方法
公开(公告)号：JP2011158356A
公开(公告)日：2011-08-18
申请号：JP2010020415
申请日：2010-02-01
申请人： Toshiba Corp , 株式会社東芝
发明人： KONNO YUSAKU , SHIOZAWA KAZUNORI , FUJII TAKAYOSHI , HASHIMOTO SUSUMU , OKADA NAOTADA , INOUE HIROSHI , FUJIWARA TAKESHI , OKUDA KENTARO , KITAMI HIDEYUKI
IPC分类号： G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device and a defect inspection method, being capable of accurately inspecting a fine defect in a short time.
SOLUTION: The defect inspection device 1 includes: a first optical system 3 of leading light at a first wavelength, being emitted from a first light source 2 to an inspection object mounted in a mounting part 12 and leading a first light reflected from the inspection object to a detection part 10; a second optical system 9 of leading light at a second wavelength, being emitted from a second light source 6 to the inspection object mounted in the mounting part and leading a second light reflected from the inspection object to a detection part 11; and a control part 13 of controlling the first light source and the second light source. The control part conducts switching between the light at the first wavelength and the light at the second wavelength by controlling the first light source and the second light source according to a material of a part to be inspected of the inspection object.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够在短时间内精确地检查细小缺陷的缺陷检查装置和缺陷检查方法。解决方案：缺陷检查装置1包括：第一波长的引导光的第一光学系统3，从第一光源2发射到安装在安装部分12中的检查对象，并引导从第一光源反射的第一光检查对象到检测部10; 从第二光源6向安装在安装部分的检查对象发射第二波长的引导光的第二光学系统9，并将从检查对象反射的第二光引导到检测部11; 以及控制第一光源和第二光源的控制部13。控制部通过根据检查对象的被检查部件的材料控制第一光源和第二光源，进行第一波长的光和第二波长的光的切换。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2008244109A Magnetoresistive effect element, magnetic head, magnetic recording/reproducing device, and method of manufacturing magnetoresistive effect element 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置以及制造磁电效应元件的方法
公开(公告)号：JP2008244109A
公开(公告)日：2008-10-09
申请号：JP2007081991
申请日：2007-03-27
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI
IPC分类号： H01L43/10 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which can exhibit a high magnetroresistive effect by means of: suppressing the roughness of interface (wall surface) with magnetic fine junction point and smoothing it; and preventing the loss of a resistance change rate caused by scattering of electrons on the wall surface in the magnetoresistive effect element which exhibits the magnetoresistive effect by an abrupt change in the magnetization at a magnetic fine junction point.
SOLUTION: The magnetoresistive effect element comprises: a laminate including a magnetization fixed layer having a magnetization direction fixed substantially in one direction, a magnetization free layer whose magnetization direction varies with an external magnetic field, and an intermediate layer provided between the magnetization fixed layer and the magnetization free layer; and a pair of electrodes electrically connected in a vertical direction of the laminate to pass a sense current through the laminate in a direction nearly vertical to the film surface of the laminate. The intermediate layer includes a compound part which covers an insulating part, a magnetic metal part, and at least part of the outer periphery of the magnetic metal part.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻效应元件，其可以通过以下方式表现出高磁阻效应：通过磁性细结点抑制界面（壁面）的粗糙度并使其平滑化; 并且防止由于在磁性细结点处的磁化强度的突然变化而显示出磁阻效应的磁阻效应元件的壁表面上的电子散射引起的电阻变化率的损失。解决方案：磁阻效应元件包括：层压体，其包括具有大致沿一个方向固定的磁化方向的磁化固定层，其磁化方向随着外部磁场而变化的磁化自由层以及设置在磁化强度之间的中间层固定层和无磁化层; 以及一对沿层叠体的垂直方向电连接的电极，以使感应电流在与层叠体的膜表面几乎垂直的方向上通过层叠体。中间层包括覆盖绝缘部分，磁性金属部分和磁性金属部分的外周的至少一部分的复合部分。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007273561A Magnetoresistive effect element, magnetic head, and magnetic reproducing device 审中-公开
标题翻译：磁感应元件，磁头和磁性再生装置
公开(公告)号：JP2007273561A
公开(公告)日：2007-10-18
申请号：JP2006094850
申请日：2006-03-30
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetroresistive effect element which includes a vertical current-passing type spin valve film having a nanocontact structure between magnetic materials to achieve high magnetroresistance.
SOLUTION: The magnetroresistive effect element includes a magnetization fixing layer having a ferromagnetic film of which the magnetization direction is fixed virtually in a single direction; a magnetization free layer having a ferromagnetic film of which the magnetization direction changes depending on an external magnetic field; a composite spacer layer interposed between the magnetization fixing layer and the magnetization free layer and containing an insulation portion and a magnetic metal portion; and a pair of electrodes so disposed as to cause a sense current to flow perpendicular to the film surfaces of the magnetization fixing layer, complex spacer layer, and magnetization free layer. A magnetic layer constituting the magnetization fixing layer and in contact with the composite spacer layer has a bcc (body-centered cubic lattice) structure.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻效应元件，其包括在磁性材料之间具有纳米接触结构的垂直通电型自旋阀膜，以实现高磁阻。解决方案：磁阻效应元件包括具有铁磁膜的磁化固定层，其磁化方向实际上在单个方向上固定; 具有铁磁膜的磁化自由层，其磁化方向根据外部磁场而变化; 介于所述磁化固定层和所述磁化自由层之间并且包含绝缘部分和磁性金属部分的复合间隔层; 以及一对电极，其设置成使得感测电流垂直于磁化固定层，复合间隔层和无磁化层的膜表面流动。构成磁化固定层并与复合间隔层接触的磁性层具有bcc（体心立方晶格）结构。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2003297715A Charged beam exposure apparatus, optical exposure method using charged beam, and method of manufacturing semiconductor device using the optical exposure method 有权
标题翻译：充电光束曝光装置，使用充电光束的光学曝光方法以及使用光学曝光方法制造半导体器件的方法
公开(公告)号：JP2003297715A
公开(公告)日：2003-10-17
申请号：JP2002092570
申请日：2002-03-28
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGANO OSAMU , HASHIMOTO SUSUMU , YAMAZAKI YUICHIRO , ANDO KOJI
IPC分类号： G03F7/20 , H01J37/147 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a charged beam exposure apparatus and an optical exposure method which markedly reduces the influence of a space charge effect and therefore has small aberration.
SOLUTION: The charged beam exposure apparatus 1 comprises an electron gun 11 for producing a charged beam 8 with low acceleration to be free of the influence of a proximity effect, illumination lens system 15, a cell aperture 19, deflection systems 17 and 21 which deflect the charged beam 8 by an electric field and then make it incident into a desired cell pattern of the cell aperture 19, and thereafter, bend the charged beam 8 which has passed through them back on the optical axis, a reduction projection optical system 23 (Q1-Q4) which reduces the charged beam 8 which has passed through the deflection system 21 by an electric field to make it form an image on a wafer 14, and deflection systems 25 and 31 which deflect the charged beam 8 by an electric field and scan the beam over the wafer 14. The charged beam exposure apparatus 1 also comprises illumination position adjusting means 40-48 which adjust the illumination position of the charged beam 8 so that the charged beam 8 incident into the reduction projection optical system moves on a trajectory symmetric with respect to an optical axis in one of two planes which cross each other at right angles on the optical axis.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种显着降低空间电荷效应的影响的带电束曝光装置和光学曝光方法，因此具有小的像差。充电束曝光装置1包括用于产生具有低加速度的带电束8以免受邻近效应的影响的电子枪11，照明透镜系统15，电池孔19，偏转系统17和 21，其使带电束8偏转电场，然后使其入射到电池孔19的期望电池图案中，然后使已经通过它们的带电束8在光轴上弯曲，还原投影光学系统23（Q1-Q4），其通过电场减少已经通过偏转系统21的带电束8，以使其在晶片14上形成图像;以及偏转系统25和31，偏转系统25和31使带电束8偏转一个电场并将光束扫描在晶片14上。充电光束曝光设备1还包括照明位置调整装置40-48，其调节带电束8的照明位置，使得带电束8移动减小投影光学系统在相对于光轴对称的轨迹上移动，所述轨迹在光轴上以直角彼此交叉的两个平面中的一个平面中。版权所有（C）2004，JPO

6. 发明专利

JP2014220027A 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置有权
标题翻译：磁阻效应元件，磁头和磁记录再生装置
公开(公告)号：JP2014220027A
公开(公告)日：2014-11-20
申请号：JP2013099348
申请日：2013-05-09
申请人：株式会社東芝 , Toshiba Corp
发明人： HASE NAOKI , TAKAGISHI MASAYUKI , HASHIMOTO SUSUMU , MURAKAMI SHUICHI , ISOWAKI YOSUKE , KADO MASATERU , IWASAKI HITOSHI
IPC分类号： G11B5/39 , H01L43/08 , H01L43/10
CPC分类号： G01R33/093 , G11B5/3906 , G11B5/3912 , G11B5/398 , H01F10/1936 , H01F10/3268 , H01F10/3295 , H01L43/02 , H01L43/08 , Y10T428/1121
摘要：【課題】高いMR比を有するとともに大きな電流密度を供給できる磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置を提供する。【解決手段】本実施形態の磁気抵抗効果素子は、第1磁性膜と、第2磁性膜と、前記第1磁性膜と前記第2磁性膜との間に設けられた非磁性の中間膜と、を有する磁気抵抗効果膜を備え、Aを少なくともFeとMnとを含む合金、Bを少なくともSi、Al、およびGeを含む合金とするとき、前記第1および第2磁性膜の少なくとも一方は、Co100−x(AyB1.0−y(40at%≦x≦60at%、0.3≦y≦0.7)と表されたホイスラー合金であり、前記少なくとも一方の磁性膜は、前記中間膜との界面に近接し膜厚方向に設けられた第1領域におけるFe/(Fe+Mn)の比率が60%未満であり、前記第1領域に比べて前記界面から遠く膜厚方向に設けられた第2領域におけるFe/(Fe+Mn)の比率が60%以上であるように膜厚方向に組成が変調される。【選択図】図1
摘要翻译：要解决的问题：提供具有高MR比率并能够提供大电流密度的磁阻效应元件，磁头和磁记录再生装置。解决方案：磁阻效应元件包括：磁阻效应膜，其具有第一磁性膜，第二磁性膜和形成在第一磁性膜和第二磁性膜之间的非磁性中间膜。将A定义为至少含有Fe和Mn并且限定B至少包含Si，Al和Ge的合金的合金，第一和第二磁性膜中的至少一个是Heusler合金，其由Co（ AB（40at％≤x≤60at％，0.3≤y≤0.7），所述至少一个所述磁性膜的组成在膜厚方向调制，使得第一区域中的Fe /（Fe + Mn）形成在与中间膜的界面附近且膜厚方向成为60％以下的Fe /（Fe + Mn）与膜界面相比形成的第二区域的Fe /（Fe + Mn）比第一区域地区为60％以上。

7. 发明专利

JP2012064280A Magnetic head, magnetic head assembly, and magnetic recording and reproducing device 审中-公开
标题翻译：磁头，磁头组件和磁记录和再现装置
公开(公告)号：JP2012064280A
公开(公告)日：2012-03-29
申请号：JP2010208833
申请日：2010-09-17
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAGISHI MASAYUKI , HASHIMOTO SUSUMU , IWASAKI HITOSHI
IPC分类号： G11B5/39 , H01L43/08
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , Y10T428/11 , Y10T428/1171
摘要： PROBLEM TO BE SOLVED: To provide a magnetic head having magnetoresistance effect elements with high output and low resistance, and to provide a magnetic head assembly and a magnetic recording and reproducing device.SOLUTION: The magnetic head includes a reproduction section which has a medium facing surface facing a magnetic recording medium, and detects a magnetization direction recorded in the magnetic recording medium. The reproduction section includes: a first magnetization fixed layer having a fixed magnetization direction; a second magnetization fixed layer which is stacked on the first magnetization fixed layer in a first direction parallel to the medium facing surface, and has a fixed magnetization direction; and a magnetization free layer which is provided between the first magnetization fixed layer and the second magnetization fixed layer and has a variable magnetization direction. The length of the magnetization free layer in a second direction perpendicular to the medium facing surface is shorter than that of the first magnetization fixed layer in the second direction, and is shorter than that of the second magnetization fixed layer in the second direction.
摘要翻译：要解决的问题：提供具有高输出和低电阻的磁阻效应元件的磁头，并提供磁头组件和磁记录和再现装置。解决方案：磁头包括具有面向磁记录介质的介质面向表面并且检测记录在磁记录介质中的磁化方向的再现部分。再现部分包括：具有固定磁化方向的第一磁化固定层; 第二磁化固定层，其在与所述介质相对表面平行的第一方向上堆叠在所述第一磁化固定层上，并且具有固定的磁化方向; 以及无磁化层，其设置在所述第一磁化固定层和所述第二磁化固定层之间，并且具有可变的磁化方向。在与第二方向垂直的介质相对表面的第二方向上的无磁化层的长度短于第一磁化固定层在第二方向上的长度短于第二磁化固定层在第二方向上的长度。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2008085220A Magnetoresistance effect element, magnetic head, and magnetic reproducer 审中-公开
标题翻译：磁阻效应元件，磁头和磁性复制器
公开(公告)号：JP2008085220A
公开(公告)日：2008-04-10
申请号：JP2006265836
申请日：2006-09-28
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G11B5/39 , H01L21/8246 , H01L27/105
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a new magnetoresistance effect element enabled to exert a high magnetoresistance effect without causing the problems of low resistance and interlayer coupling. SOLUTION: The magnetoresistance element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a second magnetic layer whose magnetization direction varies with external magnetic fields, an intermediate layer provided so as to allow insulating portions and magnetic metal portions to be alternately positioned between the first magnetic layer and the second magnetic layer, and an electrode for vertically electrifying the film surfaces of the laminated layers including the first magnetic layer, the intermediate layer, and the second magnetic layer, wherein the magnetic metal portion includes non-ferromagnetic metals in the intermediate layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够施加高磁阻效应的新的磁阻效应元件，而不会引起低电阻和层间耦合的问题。解决方案：磁阻元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向随外部磁场变化的第二磁性层，设置成允许绝缘部分和磁性金属部分的中间层交替地位于第一磁性层和第二磁性层之间，以及用于使包括第一磁性层，中间层和第二磁性层的叠层的膜表面垂直带电的电极，其中磁性金属部分包括非中间层的铁磁性金属。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008085219A Magnetic resistance effect element 审中-公开
标题翻译：磁阻效应元件
公开(公告)号：JP2008085219A
公开(公告)日：2008-04-10
申请号：JP2006265835
申请日：2006-09-28
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： TAKAGISHI MASAYUKI , IWASAKI HITOSHI , FUKUYA HIROMI , HASHIMOTO SUSUMU
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/32 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a differential magnetic resistance effect element with a new configuration, i.e. a dual-element type capable of reducing a manufacturing cost and suppressing the deterioration of an yield.
SOLUTION: The differential magnetic resistance effect element is obtained by laminating a magnetic resistance effect laminated film exhibiting a positive magnetic resistance effect and a magnetic resistance effect laminated film exhibiting a negative magnetic resistance effect through a conductive layer so as to allow the magnetization direction of a second magnetic layer varying with the external magnetic field of each magnetic resistance effect laminated film to be positioned inwardly of a first magnetic layer whose magnetization direction is substantially fixed.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2008021749A Magnetoresistive element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁性元件，磁头和磁性再生装置
公开(公告)号：JP2008021749A
公开(公告)日：2008-01-31
申请号：JP2006190846
申请日：2006-07-11
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI , SAHASHI MASASHI , DOI MASAAKI , MIYAKE KOSAKU
IPC分类号： H01L43/08 , G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a vertical power-feeding magnetoresistive element simultaneously attaining adequate resistance value and high resistance variation rate in the magnetic resistance using nano-contact between magnetic materials.
SOLUTION: The magnetoresistive effect element is provided with a magnetoresistive effect film having a magnetization fixing layer including a first ferromagnetic material film that is substantially fixed in one magnetizing direction, a free magnetizing layer including a second ferromagnetic material film that is changed in the magnetizing direction corresponding to an external magnetic field, a composite spacer layer arranged between the magnetization fixing layer and free magnetizing layer and including an insulating layer and a ferromagnetic metal part provided through this insulating layer, a pair of electrodes for feeding a sense current in the vertical direction to the film surface of the magnetoresistive effect film, and an anti-ferromagnetic element that is arranged in at least one of the magnetization fixing layer and free magnetizing layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直供电磁阻元件，同时在磁性材料之间使用纳米接触获得足够的电阻值和高电阻变化率的磁阻。解决方案：磁阻效应元件设置有具有磁化固定层的磁阻效应膜，磁化固定层包括基本上固定在一个磁化方向上的第一铁磁材料膜，包括在第二铁磁材料膜中变化的自由磁化层与外部磁场相对应的磁化方向，配置在磁化固定层和自由磁化层之间的复合间隔层，并且包括绝缘层和通过该绝缘层设置的强磁性金属部分;一对电极，磁阻效应膜的膜表面的垂直方向，以及布置在磁化固定层和自由磁化层中的至少一个中的反铁磁性元件。版权所有（C）2008，JPO＆INPIT

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