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1. 发明专利

JP2011047050A Sputtering target and method for manufacturing the same 有权
标题翻译：溅射目的及其制造方法
公开(公告)号：JP2011047050A
公开(公告)日：2011-03-10
申请号：JP2010186681
申请日：2010-08-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI YUKINOBU , KOSAKA YASUO , FUJIOKA NAOMI , WATANABE TAKASHI , ISHIGAMI TAKASHI , WATANABE KOICHI
IPC分类号： C23C14/34 , C22C1/04 , C22C27/02 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target suitable for forming a barrier layer of a Cu wiring used in a semiconductor element etc., and the sputtering target.
SOLUTION: The method for manufacturing a sputtering target comprises: a step of refining a high-purity Ta ingot by melting a crude metal Ta with an electron beam; a step of subjecting the resulting high-purity Ta ingot to plastic working through forging and rolling; and a step of subjecting the plastic-worked high-purity Ta ingot to a heat-treatment. The sputtering target is also provided.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于形成用于半导体元件等的Cu布线的阻挡层和溅射靶的溅射靶的制造方法。解决方案：用于制造溅射靶的方法包括：通过用电子束熔化粗金属Ta来精炼高纯度Ta锭的步骤; 通过锻造和轧制对所得高纯度Ta锭进行塑性加工的步骤; 以及对塑性加工的高纯度Ta锭进行热处理的步骤。还提供了溅射靶。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009149996A Sputter target 有权
标题翻译：射击目标
公开(公告)号：JP2009149996A
公开(公告)日：2009-07-09
申请号：JP2009055532
申请日：2009-03-09
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE KOICHI , KOSAKA YASUO , WATANABE TAKASHI , ISHIGAMI TAKASHI , SUZUKI YUKINOBU , FUJIOKA NAOMI
IPC分类号： C23C14/34 , C22C21/00 , C22C27/02 , C22F1/00 , C22F1/18 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a sputter target which suppresses the sudden occurrence of giant dust and can improves the yield of an Nb film. SOLUTION: Disclosed is a sputter target consisting of high-purity Nb in which each Nb crystal grain has a grain size of 0.1 to 10 times the average crystal grain size and a grain size ratio between adjacent crystal grains is 0.1 to 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供抑制突发性巨尘的溅射靶，可以提高Nb膜的产率。解决方案：公开了一种由高纯Nb组成的溅射靶，其中每个Nb晶粒的晶粒尺寸为平均晶粒尺寸的0.1至10倍，相邻晶粒之间的晶粒尺寸比为0.1至10。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007113118A HIGH-PURITY Ta MATERIAL FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的高纯度钽材料
公开(公告)号：JP2007113118A
公开(公告)日：2007-05-10
申请号：JP2006294254
申请日：2006-10-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI YUKINOBU , WATANABE KOICHI , KOSAKA YASUO , WATANABE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI
IPC分类号： C23C14/34 , C22C27/02 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a high-purity Ta material for a semiconductor device, which makes the thickness of a TaN film formed with a reactive sputtering method more uniform in the film plane.
SOLUTION: The high-purity Ta material for the semiconductor device has Vickers hardness in a range of Hv 70 to 150 and the dispersion of the hardness within 20% or less. The high-purity Ta material for the semiconductor device is used as a material for producing a sputtering target.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于半导体器件的高纯度Ta材料，这使得在膜平面中用反应溅射法形成的TaN膜的厚度更均匀。解决方案：用于半导体器件的高纯度Ta材料的维氏硬度为Hv 70〜150，硬度分散在20％以下。用于半导体器件的高纯度Ta材料用作制造溅射靶的材料。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007197838A Sputtering target, and thin film and device using the same 审中-公开
标题翻译：溅射目标，薄膜和使用该薄膜的装置
公开(公告)号：JP2007197838A
公开(公告)日：2007-08-09
申请号：JP2007074644
申请日：2007-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , FUJIOKA NAOMI , WATANABE TAKASHI , KOSAKA YASUO , SUZUKI YUKINOBU
IPC分类号： C23C14/34 , C22C22/00 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To satisfy demand characteristics to a sputtered film which have been made severe more and more, e.g., in accordance with the increase in the performance of various devices in a sputtering target essentially consisting of Mn.
SOLUTION: The content of oxygen in each part of a sputtering target essentially consisting of Mn is controlled to ±20% to the average value of the content of oxygen in the whole of the target. The content of nitrogen in each part of a sputtering target essentially consisting of Mn is controlled to ±40% to the average value of the content of nitrogen in the whole of the target. The content of carbon in each part of a sputtering target essentially consisting of Mn is controlled to ±70% to the average value of the content of carbon in the whole of the target.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了满足越来越多的溅射膜的需求特性，例如根据基本上由Mn组成的溅射靶的各种器件的性能的提高。
解决方案：基本上由Mn组成的溅射靶的每个部分中的氧含量被控制在整个靶中氧含量的平均值的±20％。基本上由Mn组成的溅射靶的每个部分中的氮含量被控制在整个靶中氮含量的平均值的±40％。基本上由Mn组成的溅射靶的每个部分中的碳含量被控制在与整个靶中的碳含量的平均值的±70％。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007073980A Tan film for semiconductor device and semiconductor device using the same 审中-公开
标题翻译：用于半导体器件的薄膜和使用该半导体器件的半导体器件
公开(公告)号：JP2007073980A
公开(公告)日：2007-03-22
申请号：JP2006294256
申请日：2006-10-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI YUKINOBU , WATANABE KOICHI , KOSAKA YASUO , WATANABE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI
IPC分类号： H01L21/3205 , C23C14/06 , C23C14/34 , H01L21/28 , H01L21/285 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a TaN film for a semiconductor device having an improved in-plane uniformity of thickness of a formed film. SOLUTION: The TaN film for the semiconductor device is a TaN film used as a barrier layer to a wiring film made of Cu or Cu alloy, and is characterized by having 5% or less of the in-plane uniformity of thickness of the formed film. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有改善的成膜厚度的面内均匀性的半导体器件的TaN膜。解决方案：用于半导体器件的TaN膜是用作由Cu或Cu合金制成的布线膜的阻挡层的TaN膜，其特征在于，其厚度的面内均匀度为5％以下形成的电影。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006041511A Antiferromagnetic film, exchange-coupling film using the same, magnetoresistance-effect element, and magnetic device 有权
标题翻译：抗静电膜，使用其的交换耦合膜，磁阻效应元件和磁性装置
公开(公告)号：JP2006041511A
公开(公告)日：2006-02-09
申请号：JP2005204355
申请日：2005-07-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： H01F10/12 , C22C22/00 , G01R33/09 , G11B5/39 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To stably obtain an adequate exchange-coupling force at room temperature and in a high temperature range by stabilizing the film composition and the film quality of an antiferromagnetic film which is composed of an Mn alloy and is excellent in corrosion resistivity and thermal property.
SOLUTION: The antiferromagnetic film contains Mn of 20 to 95 atomic per cent, while the remainder is substantially at least one of R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The antiferromagnetic film comprises at least one member selected from among an alloy phase and a compound phase formed between the R element and Mn, and is formed by sputtering using a sputtering target in which no single-phase Mn grain having the maximum grain size exceeding 50 μm exists. The divergence of the composition of the antiferromagnetic film from that of the sputtering target is less than 10 atomic per cent. The antiferromagnetic film 3 is laminated with a ferromagnetic film 4 to constitute the exchange-coupling film 2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过稳定由Mn合金构成的反铁磁膜的膜组成和膜质量，在室温和高温范围内稳定地获得适当的交换耦合力，并且在耐腐蚀性和热性能。反铁磁性膜含有20〜95原子％的Mn，余量基本上为选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta， Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re。反铁磁膜包括选自合金相和形成在R元素和Mn之间的化合物相中的至少一种，并且通过使用不具有超过50的最大粒径的单相Mn晶粒的溅射靶进行溅射而形成存在。反铁磁膜的组成与溅射靶的组成的差异小于10原子％。反铁磁膜3与铁磁膜4层叠以构成交换耦合膜2.版权所有：（C）2006，JPO＆NCIPI

7. 发明专利

JP2005060844A Production method for antiferromagnetic film 有权
标题翻译：抗生素膜生产方法
公开(公告)号：JP2005060844A
公开(公告)日：2005-03-10
申请号：JP2004265938
申请日：2004-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANOBE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI , KATSUI NOBUO , FUKUYA HIROMI , SAITO KAZUHIRO , IWASAKI HITOSHI , SAHASHI MASASHI , WATANABE TAKASHI
IPC分类号： C23C14/34 , G11B5/39 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide an antiferromagnetic film which is made of a Mn alloy excellent in corrosion resistance and thermal properties, has stable composition and qualities, and can have a stable and sufficient switching connection power at room temperature and also in a high-temperature range.
SOLUTION: The method for producing the antiferromagnetic film comprises a process wherein an R-Mn antiferromagnetic film 3 is formed by using a sputtering target consisting of 10-98 atom% Mn and the balance substantially being at least one R atom selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target has a target structure wherein at least one kind of phase selected from among an alloy phase and a compound phase of the R element and Mn is contained as at least a part of the structure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供由耐腐蚀性和热性能优异的Mn合金制成的反铁磁膜，其组成和质量稳定，并且可以在室温下具有稳定和充分的开关连接功率高温范围。反铁磁膜的制造方法包括使用由10-98原子％的Mn构成的溅射靶，其余基本上为至少一个选自以下的R原子的R-Mn反铁磁膜3 在Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru，Os，Cr，Mo，W和Re中。溅射靶具有目标结构，其中至少一种选自合金相和R元素的化合物相和Mn的相作为结构的至少一部分。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003313659A Sputtering target for recording medium and magnetic recording medium 有权
标题翻译：用于记录介质和磁记录介质的溅射目标
公开(公告)号：JP2003313659A
公开(公告)日：2003-11-06
申请号：JP2002119888
申请日：2002-04-22
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIOKA NAOMI , KIKITSU SATORU , KAI TADASHI , NAGASE TOSHIHIKO , MAEDA TOMOYUKI , AKIYAMA JUNICHI , AIKAWA HISANORI , SUZUKI YUKINOBU , WATANABE KOICHI , WATANABE TAKASHI , ISHIGAMI TAKASHI
IPC分类号： C22C32/00 , B22F3/00 , C22C5/04 , C22C19/07 , C22C38/00 , C23C14/34 , G11B5/64 , G11B5/65 , G11B5/738 , G11B5/851
摘要： PROBLEM TO BE SOLVED: To anneal a sputtered magnetic alloy film at a relatively low temperature in order to convert the film into an ordered phase alloy film having an L 10 structure which is used for a recording layer of a magnetic recording medium. SOLUTION: The sputtering target for recording medium includes a sintered magnetic alloy compact containing at least one element selected from Fe and Co, at least one element selected from Pt and Pd and, if necessary, additive components. An oxygen content of this sintered target is 1,000 ppm or less. The magnetic recording medium formed on a substrate comprises a recording layer, which is made of a magnetic alloy having an ordered phase of the L 10 structure, and a protection layer formed on the recording layer to cover it. An atomic percentage of a residual oxygen content in the recording layer is 30% or less. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了将薄膜转化为具有用于记录的L 10 结构的有序相合金膜，在相对低的温度下对溅射的磁性合金膜进行退火磁记录介质层。解决方案：用于记录介质的溅射靶包括含有选自Fe和Co中的至少一种元素，至少一种选自Pt和Pd的元素以及必要时添加成分的烧结磁性合金压块。该烧结靶的氧含量为1000ppm以下。形成在基板上的磁记录介质包括由具有L 10 结构的有序相的磁性合金制成的记录层，以及形成在记录层上的保护层以覆盖该记录层。记录层中残留氧含量的原子百分比为30％以下。版权所有（C）2004，JPO

9. 发明专利

JP2003064473A Sputtering target, antiferromagnetic film, magnetoresistance effect element provided with the film, magnetic head, and magnetoresistance effect type random access memory 有权
标题翻译：溅射目标，抗病毒膜，电影，磁头和磁阻效应类型随机存取存储器提供的磁阻效应元件
公开(公告)号：JP2003064473A
公开(公告)日：2003-03-05
申请号：JP2001254635
申请日：2001-08-24
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE KOICHI , ISHIGAMI TAKASHI , SUZUKI YUKINOBU , FUJIOKA NAOMI , WATANABE TAKASHI , KOSAKA YASUO
IPC分类号： C23C14/34 , G11B5/39 , H01F10/32 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , H01F10/002 , H01F41/302
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target which can form an antiferromagnetic strengthened film having a compositional uniformity, and to provide an antiferromagnetic film, a magnetoresistance effect element provided with the film, a magnetic head and a magnetoresistance effect type random access memory. SOLUTION: The sputtering target has a composition containing at least one kind of element selected from nickel, palladium, platinum, cobalt, rhodium, iridium, vanadium, niobium, tantalum, copper, silver, gold, ruthenium, osmium, chromium, molybdenum, tungsten and rhenium, and manganese, and in which the number of defects per cm in the surface to be sputtered is
摘要翻译：要解决的问题：提供一种能够形成具有组成均匀性的反铁磁增强膜并提供反铁磁性膜的溅射靶，设置有膜的磁阻效应元件，磁头和磁阻效应型随机存取存储器。解决方案：溅射靶具有含有选自镍，钯，铂，钴，铑，铱，钒，铌，钽，铜，银，金，钌，锇，铬，钼，钨中的至少一种元素的组成铼和锰，并且其中要溅射的表面中每cm 2的缺陷数为<= 10个。使用上述溅射靶沉积反铁磁性膜。磁阻效应元件设置有上述反铁磁膜。隧道磁阻效应元件设有上述反铁磁膜。磁头设置有上述磁阻效应元件。磁阻效应型随机存取存储器具有上述隧道磁阻效应元件。

10. 发明专利

JP2007113117A Method for manufacturing sputtering target 有权
标题翻译：制造喷射目标的方法
公开(公告)号：JP2007113117A
公开(公告)日：2007-05-10
申请号：JP2006294253
申请日：2006-10-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI YUKINOBU , WATANABE KOICHI , KOSAKA YASUO , WATANABE TAKASHI , FUJIOKA NAOMI , ISHIGAMI TAKASHI
IPC分类号： C23C14/34 , C22C27/02 , C22F1/00 , C22F1/02 , C22F1/18 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target which makes the thickness of a film formed from TaN or the like with a reactive sputtering method more uniform in the film plane.
SOLUTION: The method for manufacturing the sputtering target made from high-purity Ta comprises the steps of: forging a high-purity Ta ingot from two or more axial directions; heat-treating the Ta ingot two or more times in a vacuum during the forging step; cold-rolling the Ta material which has passed through the forging step and the vacuum heat-treatment step; and heat-treating the Ta material having passed through the cold rolling step for causing recrystallization therein.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造溅射靶的方法，其使得在膜平面中以反应性溅射法更均匀的由TaN等形成的膜的厚度。解决方案：用于制造由高纯度Ta制成的溅射靶的方法包括以下步骤：从两个或多个轴向锻造高纯度Ta锭; 在锻造步骤中在真空中对Ta锭进行两次以上的热处理; 冷轧已经通过锻造步骤和真空热处理步骤的Ta材料; 对通过冷轧工序的Ta材进行热处理，使其再结晶。版权所有（C）2007，JPO＆INPIT

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