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1. 发明专利

JP5908882B2 磁気スタックおよび磁気素子を含む装置有权
标题翻译：装置，包括一个磁性叠层和一个磁性元件
公开(公告)号：JP5908882B2
公开(公告)日：2016-04-26
申请号：JP2013247176
申请日：2013-11-29
申请人：シーゲイトテクノロジーエルエルシー , Seagate Technology LLC
发明人：ビジャイ・カルティック・サンカル , マーク・ウィリアム・コビントン
IPC分类号： H01L43/08 , H01L43/12 , G11B5/39 , G01R33/09 , H01L43/10
CPC分类号： G11B5/313 , G01R33/00 , G01R33/093 , G11B5/3909 , G11C11/16 , G11C11/161 , H01F10/32 , H01F41/307 , H01L43/08 , H01L43/12 , H01F10/3254 , Y10T428/1114 , Y10T428/1143

2. 发明专利

JP5752183B2 磁気積層体設計有权
标题翻译：磁性叠层设计
公开(公告)号：JP5752183B2
公开(公告)日：2015-07-22
申请号：JP2013141582
申请日：2013-07-05
申请人：シーゲイトテクノロジーエルエルシー , タン,マイケル
发明人：シー,ハイウェン , クエール,アントワーヌ , リー,ブライアン , ライアン,パトリック , ジン,インシク , アンダーソン,ポール
IPC分类号： H01L29/82 , H01L21/8246 , H01L27/105 , G11B5/39 , H01L43/08
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01L43/08 , H01F10/3286 , Y10T428/1114 , Y10T428/1143

4. 发明专利

JP5387990B2 Magnetic memory element and a method of driving and non-storage device 有权
公开(公告)号：JP5387990B2
公开(公告)日：2014-01-15
申请号：JP2010517660
申请日：2008-09-05
申请人：富士電機株式会社
发明人：泰史荻本 , 春雄川上
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01F10/3295 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01F10/133 , H01F10/3268 , H01F10/3286 , H01L27/224 , H01L43/08 , Y10T428/1107 , Y10T428/1143

5. 发明专利

JP5097527B2 Magnetic reproducing head, the magnetic head and the magnetic storage device 有权
公开(公告)号：JP5097527B2
公开(公告)日：2012-12-12
申请号：JP2007324791
申请日：2007-12-17
申请人：株式会社日立製作所
发明人：富生岩崎
IPC分类号： G11B5/39 , H01L43/08 , H01L43/10
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3929 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic reproduction head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive film formed between the lower and the upper magnetic shield layers, a refill film in an element height direction disposed in contact with a surface opposite a floating surface of the magnetoresistive film, and a refill film in a track width direction disposed on a side wall surface of the magnetoresistive film. The magnetoresistive film is a tunneling magnetoresistive film including a free layer, an insulating barrier layer, and a fixed layer. The insulating barrier layer is one of a magnesium oxide film, an aluminum oxide film, and a titanium oxide film which contains at least one of nitrogen and silicon.

6. 发明专利

JP2012230750A Magnetic stack, the magnetic element and method 有权
标题翻译：磁性堆叠，磁性元件和方法
公开(公告)号：JP2012230750A
公开(公告)日：2012-11-22
申请号：JP2012090883
申请日：2012-04-12
申请人： Seagate Technology Llc , シーゲイトテクノロジーエルエルシー
发明人： VICTOR BORIS SAPOZHNIKOV , SINGLETON ERIC WALTER , COVINGTON MARK WILLIAM
IPC分类号： G11B5/39 , H01L43/08
CPC分类号： G11B5/398 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3912 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1107 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a magnetic element capable of detecting changes in magnetic states.SOLUTION: A magnetic element has a magnetically responsive lamination structure with a ferromagnetic free layer separated from a synthetic antiferromagnetic (SAF) layer by a spacer layer and from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The lamination structure is coupled to at least one antiferromagnetic (AFM) tab a predetermined offset distant from the ABS.
摘要翻译：要解决的问题：提供能够检测磁状态变化的磁性元件。解决方案：磁性元件具有磁响应层压结构，其中铁磁自由层通过间隔层与合成反铁磁（SAF）层分离，并且由空气轴承表面（ABS）存储在相邻介质中的感测数据位）。层压结构与至少一个反铁磁（AFM）接头耦合到远离ABS的预定偏移。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012178541A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2012178541A
公开(公告)日：2012-09-13
申请号：JP2011237544
申请日：2011-10-28
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： KARIYADA HIDETSUGU , SUEMITSU KATSUMI , TANIGAWA HIRONOBU , MORI KAORU , SUZUKI AKIHIRO , NAGAHARA KIYOKAZU , OZAKI KOSUKE , OSHIMA NORIKAZU
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory in which a data storage layer has strong vertical magnetic anisotropy and magnetic coupling is strong between the data storage layer and a magnetization fixed layer provided below the data storage layer.SOLUTION: A magnetic memory comprises magnetization fixed layers 50a and 50b which have vertical magnetic anisotropy and in which a magnetization direction is fixed, an interlayer insulation layer 60, an underlying layer 40 formed on upper surfaces of the magnetization fixed layers 50a and 50b and the interlayer insulation layer 60, and a data storage layer 10 which is formed on an upper surface of the underlying layer 40 and has vertical magnetic anisotropy. The underlying layer 40 includes a first magnetic underlying layer 41 formed from a magnetic material and a non-magnetic underlying layer 42 formed on the first magnetic underlying layer 41. A thickness of the first magnetic underlying layer 41 is adjusted to prevent the first magnetic underlying layer 41 from presenting intra-plane magnetic anisotropy on the interlayer insulation layer 60.
摘要翻译：要解决的问题：提供一种数据存储层在数据存储层和设置在数据存储层下方的磁化固定层之间具有强垂直磁各向异性并且磁耦合强的磁存储器。解决方案：磁存储器包括具有垂直磁各向异性并且其中磁化方向固定的磁化固定层50a和50b，层间绝缘层60，形成在磁化固定层50a的上表面上的下层40和 50b和层间绝缘层60，以及形成在下层40的上表面上并具有垂直磁各向异性的数据存储层10。下层40包括由磁性材料形成的第一磁性下层41和形成在第一磁性下层41上的非磁性下层42.调整第一磁性下层41的厚度以防止第一磁性底层层41在层间绝缘层60上呈现面内磁各向异性。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012129225A Memory element and memory apparatus 审中-公开
标题翻译：记忆元素和记忆装置
公开(公告)号：JP2012129225A
公开(公告)日：2012-07-05
申请号：JP2010276590
申请日：2010-12-13
申请人： Sony Corp , ソニー株式会社
发明人： OMORI HIROYUKI , HOSOMI MASAKATSU , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE KAZUAKI , UCHIDA HIROYUKI , ASAYAMA TETSUYA
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1129 , Y10T428/1143 , Y10T428/115
摘要： PROBLEM TO BE SOLVED: To achieve a magnetic memory using a spin torque which can obtain vertical magnetization in heat treatment at a temperature in a range from about 300°C to 400°C and can be easily manufactured in a semiconductor process.SOLUTION: A memory element comprises a memory layer 17 having magnetization perpendicular to a film surface and a direction of magnetization changed corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film surface, which serves as a reference of information stored in the memory layer 17 and an insulation layer 16 of an oxide provided between the memory layer 17 and the magnetization fixed layer 15. At least one of the memory layer and the magnetization fixed layer is formed such that an Fe film and an Ni-contained film sequentially formed from the side of an interface bordering the insulation layer and a graded composition distribution in which a composition ratio of Fe to Ni on the interface side is larger is formed after heat treatment.
摘要翻译：要解决的问题：使用能够在约300℃至400℃的温度范围内获得热处理中的垂直磁化的自旋转矩来实现磁存储器，并且可以容易地在半导体工艺中制造。解决方案：存储元件包括具有垂直于膜表面的磁化和对应于信息变化的磁化方向的存储层17，具有垂直于膜表面的磁化的磁化固定层15，其用作信息的参考存储在存储层17中的绝缘层16和设置在存储层17和磁化固定层15之间的氧化物的绝缘层16.形成存储层和磁化固定层中的至少一个，使得Fe膜和Ni- 在与热绝缘层相邻的界面侧依次形成的包含膜和在界面侧的Fe与Ni的组成比较大的分级组成分布。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP4905526B2 Laminate structure and the magnetoresistance effect device using the same having a FePt-based magnetic layer 有权
公开(公告)号：JP4905526B2
公开(公告)日：2012-03-28
申请号：JP2009223869
申请日：2009-09-29
申请人： Tdk株式会社
发明人：宏宣松澤 , 勤長
IPC分类号： H01F10/30 , G11B5/39 , H01F10/14 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/3967 , G11B2005/0024 , H01F10/123 , H01F10/16 , H01F10/3272 , H01L43/10 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/12611 , Y10T428/12951 , Y10T428/265

10. 发明专利

JP2011129930A Production of device comprising magnetic structures formed on one and the same substrate and having respective different magnetization orientations 有权
标题翻译：生产包含形成在同一基板上并具有相应不同磁化方位的磁性结构的器件
公开(公告)号：JP2011129930A
公开(公告)日：2011-06-30
申请号：JP2010283142
申请日：2010-12-20
申请人： Commissariat A L'energie Atomique & Aux Energies Alternatives , コミッサリアアレネルジーアトミークエオゼネルジザルタナテイヴ
发明人： REDON OLIVIER
IPC分类号： H01F10/08 , G01R33/02 , H01F10/32
CPC分类号： G01R33/0052 , B82Y25/00 , G01R33/093 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a device including magnetic blocks arranged on a substrate and magnetized in different directions. SOLUTION: The method includes the steps of: (a) forming, as a stack (108) of one or more layers (104 1 , 104 2 and 104 3 ) of at least one antiferromagnetic material and one or more layers (105 1 , 105 2 ) of at least one ferromagnetic material resting on a substrate, at least one first block and at least one second block, the blocks being longilineal and separate and extending respectively in a first main direction and in a second main direction, the first and the second main directions forming a first non-zero angle α therebetween; and (b) annealing the blocks at a temperature higher than the ordering temperature of the antiferromagnetic material or than the blocking temperature or than the Neel temperature of the antiferromagnetic material. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种制造包括设置在基板上并在不同方向上被磁化的磁性块的装置的方法。解决方案：该方法包括以下步骤：（a）形成作为一个或多个层（104→SB> 104 2 和104的堆叠（108）至少一种铁磁材料的至少一个反铁磁材料和一个或多个层（105 1 ，105 SB> 2 SB）3，衬底，至少一个第一块和至少一个第二块，所述块是沿着第一主方向和第二主方向分开并分离并分开的，所述第一和第二主方向形成第一非零角α 其间; 和（b）在高于反铁磁材料的有序温度的温度下，或者比阻燃温度或反铁磁材料的Neel温度对块进行退火。版权所有（C）2011，JPO＆INPIT

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