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1. 发明专利

JP2006261241A Magnetoresistive element, manufacuring method thereof, magnetic reproducing head, and magnetic information reproducing apparatus 审中-公开
标题翻译：磁性元件，其制造方法，磁性复制头和磁性信息再现装置
公开(公告)号：JP2006261241A
公开(公告)日：2006-09-28
申请号：JP2005073913
申请日：2005-03-15
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element or the like for realizing excellent exchange coupling magnetic field while maintaining a higher MR changing rate of a specular spin valve film.
SOLUTION: The magnetoresistive element comprises a high coersive force layer 25 showing ferromagnetic property magnetized in the predetermined direction; a non-magnetic material layer 9 for anti-parallel coupling; a compound layer 13 including an oxide, carbide, fluoride, boride or sulfide of the ferrimagnetic material or anti-ferromagnetic material having the magnetism transition point hither than the room temperature; a substantially magnetized first ferromagnetic layer 15"; a second ferromagnetic layer 19 rotatably magnetized with an external process; and a non-magnetic layer 17 formed between the first and second magnetic layers.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于实现优异的交换耦合磁场的磁阻元件等，同时保持镜面自旋阀膜的更高的MR变化率。解决方案：磁阻元件包括表现出沿预定方向磁化的铁磁特性的高强度力层25; 用于反平行耦合的非磁性材料层9; 包含铁氧体材料的氧化物，碳化物，氟化物，硼化物或硫化物或具有高于室温的磁转变点的反铁磁材料的化合物层13; 一个基本上被磁化的第一铁磁层15“;一个可以用外部工艺旋转磁化的第二铁磁层19;以及形成在第一和第二磁性层之间的非磁性层17.版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005259976A Magnetoresistance effect element, magnetic head and magnetic recording and reproducing device 审中-公开
标题翻译：磁阻效应元件，磁头和磁记录和再现装置
公开(公告)号：JP2005259976A
公开(公告)日：2005-09-22
申请号：JP2004069410
申请日：2004-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , FUKUZAWA HIDEAKI , YUASA HIROMI , HASHIMOTO SUSUMU , IWASAKI HITOSHI
IPC分类号： G11B5/39 , G01R33/09 , G11B5/127 , G11B5/33 , H01F10/26 , H01F10/32 , H01L43/08
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which realizes a high magnetoresistance changing amount by restraining or recovering the deterioration of crystallinity. SOLUTION: The magnetoresistance effect element is equipped with a magnetization fixed layer comprising a magnetic film in which a magnetizing direction is fixed in one direction substantially; a nonmagnetic intermediate layer formed on the magnetization fixed layer; a magnetization free layer having the crystalline structure of bcc structure and comprising a magnetic film whose magnetizing direction is changed in accordance with an external magnetic field; a cap layer formed on the magnetization free layer and having the crystalline structure of fcc structure, hcp structure or the bcc structure while the most proximity distance between atoms is larger than the magnetization free layer; and a pair of electrodes provided to conduct a sense current into a substantially orthogonal direction to the film surfaces of the magnetization fixed layer, the nonmagnetic intermediate layer, the magnetization free layer, and the cap layer. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供通过抑制或回收结晶度劣化来实现高磁阻变化量的磁阻效应元件。解决方案：磁阻效应元件配备有磁化固定层，磁化固定层包括磁化膜，其中磁化方向基本上在一个方向上固定; 形成在磁化固定层上的非磁性中间层; 具有bcc结构的晶体结构的磁化自由层，并且包括磁化膜，其磁化方向根据外部磁场而变化; 形成在磁化自由层上并具有fcc结构，hcp结构或bcc结构的晶体结构的盖层，而原子之间的最接近距离大于无磁化层; 以及一对电极，用于将感测电流传导到与磁化固定层，非磁性中间层，磁化自由层和盖层的膜表面基本上正交的方向。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2008085220A Magnetoresistance effect element, magnetic head, and magnetic reproducer 审中-公开
标题翻译：磁阻效应元件，磁头和磁性复制器
公开(公告)号：JP2008085220A
公开(公告)日：2008-04-10
申请号：JP2006265836
申请日：2006-09-28
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G11B5/39 , H01L21/8246 , H01L27/105
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a new magnetoresistance effect element enabled to exert a high magnetoresistance effect without causing the problems of low resistance and interlayer coupling. SOLUTION: The magnetoresistance element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a second magnetic layer whose magnetization direction varies with external magnetic fields, an intermediate layer provided so as to allow insulating portions and magnetic metal portions to be alternately positioned between the first magnetic layer and the second magnetic layer, and an electrode for vertically electrifying the film surfaces of the laminated layers including the first magnetic layer, the intermediate layer, and the second magnetic layer, wherein the magnetic metal portion includes non-ferromagnetic metals in the intermediate layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够施加高磁阻效应的新的磁阻效应元件，而不会引起低电阻和层间耦合的问题。解决方案：磁阻元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向随外部磁场变化的第二磁性层，设置成允许绝缘部分和磁性金属部分的中间层交替地位于第一磁性层和第二磁性层之间，以及用于使包括第一磁性层，中间层和第二磁性层的叠层的膜表面垂直带电的电极，其中磁性金属部分包括非中间层的铁磁性金属。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008085219A Magnetic resistance effect element 审中-公开
标题翻译：磁阻效应元件
公开(公告)号：JP2008085219A
公开(公告)日：2008-04-10
申请号：JP2006265835
申请日：2006-09-28
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： TAKAGISHI MASAYUKI , IWASAKI HITOSHI , FUKUYA HIROMI , HASHIMOTO SUSUMU
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/32 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a differential magnetic resistance effect element with a new configuration, i.e. a dual-element type capable of reducing a manufacturing cost and suppressing the deterioration of an yield.
SOLUTION: The differential magnetic resistance effect element is obtained by laminating a magnetic resistance effect laminated film exhibiting a positive magnetic resistance effect and a magnetic resistance effect laminated film exhibiting a negative magnetic resistance effect through a conductive layer so as to allow the magnetization direction of a second magnetic layer varying with the external magnetic field of each magnetic resistance effect laminated film to be positioned inwardly of a first magnetic layer whose magnetization direction is substantially fixed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有新结构的差分磁阻效应元件，即能够降低制造成本并抑制产率劣化的双元件型。解决方案：差动磁阻效应元件是通过层压具有正磁阻效应的磁阻效应叠层膜和通过导电层呈现负磁阻效应的磁阻效应叠层膜获得的，以便允许磁化第二磁性层的方向随着每个磁阻效应层叠膜的外部磁场而变化，位于其磁化方向基本上固定的第一磁性层的内侧。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2008021749A Magnetoresistive element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁性元件，磁头和磁性再生装置
公开(公告)号：JP2008021749A
公开(公告)日：2008-01-31
申请号：JP2006190846
申请日：2006-07-11
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI , SAHASHI MASASHI , DOI MASAAKI , MIYAKE KOSAKU
IPC分类号： H01L43/08 , G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a vertical power-feeding magnetoresistive element simultaneously attaining adequate resistance value and high resistance variation rate in the magnetic resistance using nano-contact between magnetic materials.
SOLUTION: The magnetoresistive effect element is provided with a magnetoresistive effect film having a magnetization fixing layer including a first ferromagnetic material film that is substantially fixed in one magnetizing direction, a free magnetizing layer including a second ferromagnetic material film that is changed in the magnetizing direction corresponding to an external magnetic field, a composite spacer layer arranged between the magnetization fixing layer and free magnetizing layer and including an insulating layer and a ferromagnetic metal part provided through this insulating layer, a pair of electrodes for feeding a sense current in the vertical direction to the film surface of the magnetoresistive effect film, and an anti-ferromagnetic element that is arranged in at least one of the magnetization fixing layer and free magnetizing layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直供电磁阻元件，同时在磁性材料之间使用纳米接触获得足够的电阻值和高电阻变化率的磁阻。解决方案：磁阻效应元件设置有具有磁化固定层的磁阻效应膜，磁化固定层包括基本上固定在一个磁化方向上的第一铁磁材料膜，包括在第二铁磁材料膜中变化的自由磁化层与外部磁场相对应的磁化方向，配置在磁化固定层和自由磁化层之间的复合间隔层，并且包括绝缘层和通过该绝缘层设置的强磁性金属部分;一对电极，磁阻效应膜的膜表面的垂直方向，以及布置在磁化固定层和自由磁化层中的至少一个中的反铁磁性元件。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2005328046A Amorphous magnetic thin film and plane magnetic element using same 有权
标题翻译：非晶磁薄膜和平面磁性元件使用相同
公开(公告)号：JP2005328046A
公开(公告)日：2005-11-24
申请号：JP2005130967
申请日：2005-04-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , INOUE TETSUO , FUKUYA HIROMI , SATO TOSHIRO , MIZOGUCHI TETSUHIKO
IPC分类号： C23C14/06 , C22C45/02 , H01F10/13 , H01F10/16 , H01F41/18
摘要： PROBLEM TO BE SOLVED: To provide an amorphous magnetic thin film which concurrently satisfies a high saturation magnetization and a high resistivity, and easily acquires a high frequency magnetic permeability caused by an excitation in a hard axis of magnetization.
SOLUTION: The amorphous magnetic thin film whose composition is substantially expressed by a formula (Fe
1-x Co
x )
1-y (B
1-z X
z )
y (in the formula, X denotes an element containing at least carbon selected from 4B group elements, and exists in the range 0
摘要翻译：解决的问题：提供同时满足高饱和磁化强度和高电阻率的非晶磁性薄膜，并且容易获得由硬磁化轴的激发引起的高频磁导率。解决方案：其组成基本上由式（Fe 1-x Co x ） 1-y 表示的非晶磁性薄膜（在该式中，X表示至少含有选自4B族元素的碳的元素，并且其中，R 1，R 2，R 3，存在于0

7. 发明专利

JP2008244109A Magnetoresistive effect element, magnetic head, magnetic recording/reproducing device, and method of manufacturing magnetoresistive effect element 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置以及制造磁电效应元件的方法
公开(公告)号：JP2008244109A
公开(公告)日：2008-10-09
申请号：JP2007081991
申请日：2007-03-27
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI
IPC分类号： H01L43/10 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which can exhibit a high magnetroresistive effect by means of: suppressing the roughness of interface (wall surface) with magnetic fine junction point and smoothing it; and preventing the loss of a resistance change rate caused by scattering of electrons on the wall surface in the magnetoresistive effect element which exhibits the magnetoresistive effect by an abrupt change in the magnetization at a magnetic fine junction point.
SOLUTION: The magnetoresistive effect element comprises: a laminate including a magnetization fixed layer having a magnetization direction fixed substantially in one direction, a magnetization free layer whose magnetization direction varies with an external magnetic field, and an intermediate layer provided between the magnetization fixed layer and the magnetization free layer; and a pair of electrodes electrically connected in a vertical direction of the laminate to pass a sense current through the laminate in a direction nearly vertical to the film surface of the laminate. The intermediate layer includes a compound part which covers an insulating part, a magnetic metal part, and at least part of the outer periphery of the magnetic metal part.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻效应元件，其可以通过以下方式表现出高磁阻效应：通过磁性细结点抑制界面（壁面）的粗糙度并使其平滑化; 并且防止由于在磁性细结点处的磁化强度的突然变化而显示出磁阻效应的磁阻效应元件的壁表面上的电子散射引起的电阻变化率的损失。解决方案：磁阻效应元件包括：层压体，其包括具有大致沿一个方向固定的磁化方向的磁化固定层，其磁化方向随着外部磁场而变化的磁化自由层以及设置在磁化强度之间的中间层固定层和无磁化层; 以及一对沿层叠体的垂直方向电连接的电极，以使感应电流在与层叠体的膜表面几乎垂直的方向上通过层叠体。中间层包括覆盖绝缘部分，磁性金属部分和磁性金属部分的外周的至少一部分的复合部分。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007273561A Magnetoresistive effect element, magnetic head, and magnetic reproducing device 审中-公开
标题翻译：磁感应元件，磁头和磁性再生装置
公开(公告)号：JP2007273561A
公开(公告)日：2007-10-18
申请号：JP2006094850
申请日：2006-03-30
申请人： Tdk Corp , Tdk株式会社 , Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROMI , HASHIMOTO SUSUMU , TAKAGISHI MASAYUKI , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetroresistive effect element which includes a vertical current-passing type spin valve film having a nanocontact structure between magnetic materials to achieve high magnetroresistance.
SOLUTION: The magnetroresistive effect element includes a magnetization fixing layer having a ferromagnetic film of which the magnetization direction is fixed virtually in a single direction; a magnetization free layer having a ferromagnetic film of which the magnetization direction changes depending on an external magnetic field; a composite spacer layer interposed between the magnetization fixing layer and the magnetization free layer and containing an insulation portion and a magnetic metal portion; and a pair of electrodes so disposed as to cause a sense current to flow perpendicular to the film surfaces of the magnetization fixing layer, complex spacer layer, and magnetization free layer. A magnetic layer constituting the magnetization fixing layer and in contact with the composite spacer layer has a bcc (body-centered cubic lattice) structure.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻效应元件，其包括在磁性材料之间具有纳米接触结构的垂直通电型自旋阀膜，以实现高磁阻。解决方案：磁阻效应元件包括具有铁磁膜的磁化固定层，其磁化方向实际上在单个方向上固定; 具有铁磁膜的磁化自由层，其磁化方向根据外部磁场而变化; 介于所述磁化固定层和所述磁化自由层之间并且包含绝缘部分和磁性金属部分的复合间隔层; 以及一对电极，其设置成使得感测电流垂直于磁化固定层，复合间隔层和无磁化层的膜表面流动。构成磁化固定层并与复合间隔层接触的磁性层具有bcc（体心立方晶格）结构。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2005203790A Magnetoresistive element, magnetic head, and magnetic reproducing device 审中-公开
标题翻译：磁电元件，磁头和磁性再生装置
公开(公告)号：JP2005203790A
公开(公告)日：2005-07-28
申请号：JP2005007014
申请日：2005-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： YUASA HIROMI , FUKUZAWA HIDEAKI , FUKUYA HIROMI , IWASAKI HITOSHI , SAHASHI MASASHI
IPC分类号： G11C11/15 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a current-perpendicular-to-plane structure magnetoresistive element which generates a large amount of resistance changes by essentially reviewing materials for a pin layer with a spin valve structure, a free layer and a spacer layer as well as magnetic heads and magnetic reproducing devices using this element. SOLUTION: A combination of a magnetic material having a negative spin-dependent bulk scattering parameter β and a spacer layer having a negative spin-dependent interface scattering parameter γ provides a magnetoresistive element which has a large resistance changing rate by making use of magnetoresistive effect. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2005072608A Magnetoresistance effect element, magnetic head, and magnetic reproducing equipment 审中-公开
标题翻译：磁阻效应元件，磁头和磁性再生设备
公开(公告)号：JP2005072608A
公开(公告)日：2005-03-17
申请号：JP2004273992
申请日：2004-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KOUI KATSUHIKO , IWASAKI HITOSHI , FUKUZAWA HIDEAKI , TOMITA HIROSHI , FUKUYA HIROMI , SAHASHI MASASHI
IPC分类号： G01R33/09 , G11B5/39 , H01F10/26 , H01F10/32 , H01F41/18 , H01F41/32 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a manetoresistance effect element having an improved electronic reflective layer at free layer side which can get a magnetoresistive increase effect, a magnetic head, and magnetic reproducing equipment.
SOLUTION: The element comprises magnetic adhesive layer having a ferromagnetic film in which the direction of magnetization is substantially adhered in one direction, magnetic free layer having a ferromagnetic film in which the direction of magnetization changes in accordance with external magnetic field, and non-magnetism interlayer arranged between the above-mentioned magnetic adhesive layer and magnetic free layer. Further, the element is characterized in that high conductive layer having a conductivity higher than those of the above-mentioned magnetic adhesive layer and magnetic free layer is laminated at the opposite side in comparison to the above-mentioned non-magnetism interlayer when seeing from the above-mentioned magnetic free layer side, and a layer which is formed by irradiating ionized gas having the main component of oxide of element different from a main element constituting this high conductive layer to the high conductive layer is laminated.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在自由层侧具有改善的电子反射层的人造电阻效应元件，其可以获得磁阻增加效应，磁头和磁性再现设备。解决方案：元件包括具有铁磁膜的磁性粘合剂层，其中磁化方向基本上沿一个方向粘附，具有铁磁膜的磁性自由层，其中磁化方向根据外部磁场而变化;以及非磁性层间布置在上述磁性粘合剂层和无磁性层之间。此外，该元件的特征在于，与上述非磁性中间层相比，具有比上述磁性粘合剂层和无磁性层的导电性更高的导电性的高导电层与上述非磁性中间层相比层叠上述磁性自由层侧，并且层叠通过将具有与构成该高导电层的主要元素不同的元素的氧化物的主要成分的电离气体照射到高导电性层而形成的层。版权所有（C）2005，JPO＆NCIPI

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