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1. 发明专利

JP2006099735A Process status management system, management server, process status management method, and process status management program 有权
标题翻译：流程状态管理系统，管理服务器，流程状态管理方法和流程状态管理程序
公开(公告)号：JP2006099735A
公开(公告)日：2006-04-13
申请号：JP2005217030
申请日：2005-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , KAKINUMA HIDENORI , MIKI TSUTOMU , SUGAMOTO JIYUNJI , OGAWA AKIRA , OKAWACHI YOSHINORI , INOUE GIICHI , INO TOMOMI
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41865 , G05B2219/31372 , G05B2219/31395 , G05B2219/31455 , G06Q30/0283 , Y02P90/12 , Y02P90/18 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide a process status management system, management server, process status management method, and process status management program capable of effectively using data for management of many devices, thereby improving the effective operation rate, performance maintenance and process of the devices, and reducing wasteful investment for management. SOLUTION: The process status management system includes a plurality of devices 12 i , 12 i+1 , 12 i+2 , 12 i+3 , etc., a device group control server 11a for collectively controlling actions of the plurality of devices, a management information link part 142 for linking action management data of each of the plurality of devices with management information transmitted from the device group control server 11a, a management server 14a for analyzing linked data by a common application, and a management database 15 for storing the linked data. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够有效地使用数据来管理许多设备的过程状态管理系统，管理服务器，过程状态管理方法和过程状态管理程序，从而提高有效操作速率，性能维护和设备流程，减少浪费的管理投资。
解决方案：过程状态管理系统包括多个设备12，其中，12 i + 1 ，12 i + 2 ，12 用于集体控制多个设备的动作的设备组控制服务器11a，用于将多个设备中的每一个的动作管理数据与管理相关联的管理信息链接部分142 从设备组控制服务器11a发送的信息，用于通过公共应用分析链接数据的管理服务器14a，以及用于存储链接数据的管理数据库15。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008177534A Managing method of semiconductor manufacturing equipment, and management system of semiconductor manufacturing equipment 审中-公开
标题翻译：半导体制造设备的管理方法和半导体制造设备的管理系统
公开(公告)号：JP2008177534A
公开(公告)日：2008-07-31
申请号：JP2007282277
申请日：2007-10-30
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUSHITA HIROSHI , SUGAMOTO JIYUNJI , ASANO MASASHI
IPC分类号： H01L21/02 , G03F7/20 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a managing method of semiconductor manufacturing equipment and a management system of the semiconductor manufacturing equipment by which a variation factor of a QC value which is not caused by APC control and maintenance is extracted, and causes for abnormalities in semiconductor manufacturing processes are specified. SOLUTION: The management system 100 of the semiconductor manufacturing equipment establishes a QC value variation period including variation of the QC value, based on the QC value obtained by measuring a processed dimension of a wafer processed by the semiconductor manufacturing equipment 2, and on a control signal output from a user interface 8, then retrieves the maintenance of the semiconductor manufacturing equipment 2, or a change of an APC set value before and after the QC value variation period, as events. An analysis period is set between the retrieved events, and a correlation analysis is made concerning the QC value during the analysis period and an EES parameter obtained by monitoring the semiconductor manufacturing equipment 2, then a computed coefficient of correlation and the EES parameter in which the correlation analysis is made are associated with each other, and the variation factor of the QC value is extracted. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供半导体制造设备的管理方法和半导体制造设备的管理系统，通过该管理方法提取不是由APC控制和维护引起的QC值的变化因子，并且导致规定了半导体制造工艺的异常情况。解决方案：半导体制造设备的管理系统100基于通过测量由半导体制造设备2处理的晶片的处理尺寸获得的QC值，建立包括QC值的变化的QC值变化周期，以及在从用户接口8输出的控制信号上，作为事件检索半导体制造装置2的维护，或QC值变更期间前后的APC设定值的变更。在检索到的事件之间设定分析期间，对分析期间的QC值和通过监视半导体制造装置2获得的EES参数进行相关分析，然后计算相关系数和EES参数，其中相关分析相互关联，提取QC值的变化因子。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008004641A Defect detection system, defect detection method, and program 审中-公开
标题翻译：缺陷检测系统，缺陷检测方法和程序
公开(公告)号：JP2008004641A
公开(公告)日：2008-01-10
申请号：JP2006170677
申请日：2006-06-20
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUSHITA HIROSHI , ARAKAWA YASUTAKA , SUGAMOTO JIYUNJI
IPC分类号： H01L21/66 , G01R31/26 , H01L21/02
CPC分类号： G05B19/41875 , G01N21/9501 , G05B2219/32221 , G05B2219/32222 , Y02P90/04 , Y02P90/22
摘要： PROBLEM TO BE SOLVED: To provide a defect detection system for accurately detecting a cause of defect of a semiconductor device. SOLUTION: The system includes: a data acquisition unit 11 for respectively acquiring a time series data of device parameters of a plurality of manufacturing apparatus 21 to 2n including an exposure apparatus and defect distribution information, in more minute unit than the size of chips arranged on a wafer to be processed with the plurality of manufacturing apparatus 21 to 2n; a pattern sorting unit 12 for grouping and sorting to defect patterns in unit of shot region or the exposure apparatus, or in unit of chip; a feature calculating unit 13 for calculating a feature value by statistically processing the time series data; a significance difference checking unit 14 for calculating frequency distribution of the feature value respectively divided for existence or non-existence of the defect pattern in unit of shot region or chip, and determining significance difference between frequency distributions respectively divided into existence and non-existence of the defect pattern; and a defect detecting unit 15 for detecting, when significance difference is determined to exist, a device parameter corresponding to the feature value as a defect cause of the defect pattern. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于准确地检测半导体器件的缺陷原因的缺陷检测系统。解决方案：该系统包括：数据获取单元11，用于分别获取包括曝光设备和缺陷分布信息的多个制造设备21至2n的设备参数的时间序列数据，比以芯片布置在待处理的晶片上，多个制造装置21至2n; 用于以拍摄区域或曝光装置为单位或以芯片为单位对缺陷图案进行分组和分类的图案分类单元12; 特征计算单元13，用于通过统计处理时间序列数据来计算特征值; 用于计算以拍摄区域或码片为单位分别划分为缺陷图案的存在或不存在的特征值的频率分布的显着性差异检查单元14，并且确定分别分为存在和不存在的频率分布之间的显着性差异缺陷模式; 以及缺陷检测单元15，用于当确定存在显着性差异时，检测与特征值相对应的设备参数作为缺陷图案的缺陷原因。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2005251925A System and method for production device control and program 有权
标题翻译：用于生产设备控制和程序的系统和方法
公开(公告)号：JP2005251925A
公开(公告)日：2005-09-15
申请号：JP2004059175
申请日：2004-03-03
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUSHITA HIROSHI , NODA TOMONOBU , KADOTA KENICHI , SUGAMOTO JIYUNJI , USHIKU YUKIHIRO
IPC分类号： H01L21/66 , G01R31/26 , H01L21/02 , H01L23/58
CPC分类号： H01L22/20 , G01R31/2894 , G05B23/0248 , G05B2219/31357 , Y02P90/14
摘要： PROBLEM TO BE SOLVED: To provide a production device control system capable of specifying device parameters to clear source of defective troubles. SOLUTION: This system comprises a production information input part 40 obtaining time-series data of the device parameters controlling a plurality of production devices 2a to 2n, respectively, a failure pattern classifying part 42 for classifying wafer in-plane distribution trends of defective semiconductor devices on a wafer manufactured by the plurality of production devices 2a to 2n, a feature value calculator 44 for statistically processing respective time-series data by a plurality of algorithms to calculate a plurality of feature values corresponding to each of the plurality of algorithms, a feature value analyzer 46 for calculating a frequency distribution of the feature value corresponding to each of presence of a defective pattern with regard to each of the plurality of feature values to execute a significant test between the frequency distributions according to the presence of the defective pattern, and an abnormality parameter extractor 48 for comparing a test value calculated by the significant test with a test reference value to extract an occurrence cause feature value of the defective pattern. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够指定设备参数以清除缺陷故障源的生产设备控制系统。解决方案：该系统包括生产信息输入部分40，分别获得控制多个生产装置2a至2n的装置参数的时间序列数据;故障模式分类部分42，用于将晶片的平面内分布趋势进行分类; 由多个生产装置2a至2n制造的晶片上的有缺陷的半导体器件，特征值计算器44，用于通过多个算法对各个时间序列数据进行统计处理，以计算与多个算法中的每一个对应的多个特征值，特征值分析器46，用于计算与多个特征值中的每个特征值相关的每个存在缺陷图案的特征值的频率分布，以根据有缺陷的存在来执行频率分布之间的有效测试模式，以及用于比较测试值计算的异常参数提取器48 通过具有测试参考值的显着测试来提取出现故障模式的特征值。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2002353080A SEMICONDUCTOR WAFER, DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：JP2002353080A
公开(公告)日：2002-12-06
申请号：JP2001345984
申请日：2001-11-12
申请人： TOSHIBA CORP
发明人： IWASE MASAO , NITTA SHINICHI , MIYASHITA MORIYA , SUGAMOTO JIYUNJI , YAMADA KOREI , NAGANO HAJIME , TANZAWA KATSUJIRO , UDO SUKEMUNE , NADAHARA SOICHI , TSUCHIYA NORIHIKO , MATSUSHITA HIROSHI , USHIKU YUKIHIRO , ARIKADO TSUNETOSHI , OKUMURA KATSUYA
IPC分类号： H01L21/02 , H01L23/544
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can adopt an optimum process for each wafer, in each manufacturing process. SOLUTION: A bevel part is made at the periphery of a wafer, a product is made on the wafer, an ID mark is given to the bevel part separately for each wafer, and the ID mark is read and a new product is made on the wafer, based on the information indicated in the ID mark. The ID mark shows the information about the product made on the wafer. This device can recognize the lot No. or the order of manufacture of a product made on the wafer, the function of the product, the inspection results of the manufacture process and others by reading the ID mark. The ID mark is given each time by a required number of times at manufacture process of each product, and it is referred to, when setting the manufacture conditions in the subsequent manufacture process.

6. 发明专利

JP2007088035A Process control system, process control method, and manufacturing method of electronic device 有权
标题翻译：过程控制系统，过程控制方法和电子设备的制造方法
公开(公告)号：JP2007088035A
公开(公告)日：2007-04-05
申请号：JP2005272019
申请日：2005-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAMOTO JIYUNJI , USHIKU YUKIHIRO
IPC分类号： H01L21/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a process control system capable of improvements of process capability and manufacturing yield.
SOLUTION: The system comprises a monitoring unit 18 for monitoring apparatus information of a manufacturing apparatus 16; an apparatus information collecting unit 10 for collecting monitored values of the apparatus information from the monitoring unit 18 in the course of execution of a manufacturing process; a correlation creating unit 11 for creating a correlation with a monitored value of the apparatus information, a processing parameter for controlling the manufacturing apparatus 16, and a feature amount obtained from a finished shape in a manufacturing process for a test wafer; a process management unit 12 for calculating a set value of the processing parameter of the manufacturing process on the basis of at least one of estimated values of feature amounts calculated on the basis of a correlation with respect to each of monitored values excepting the monitored values of the apparatus information in a manufacturing process for a plurality of reference wafers; an apparatus control unit 20 for controlling the manufacturing apparatus in accordance with a processing recipe where set values are described in processing steps.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够改善工艺能力和制造产量的工艺控制系统。解决方案：该系统包括用于监视制造装置16的装置信息的监视单元18; 用于在执行制造过程的过程中从监视单元18收集设备信息的监视值的装置信息收集单元10; 相关制造单元11，用于产生与装置信息的监视值的相关性，用于控制制造装置16的处理参数，以及在测试晶片的制造过程中从最终形状获得的特征量; 过程管理单元12，用于基于除了监视值的监视值之外的每个监视值的基于相关性计算的特征量的估计值中的至少一个来计算制造过程的处理参数的设定值在多个参考晶片的制造过程中的装置信息; 装置控制单元20，用于根据在处理步骤中描述设定值的处理配方控制制造装置。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007005367A Process control system, process control method and method of manufacturing electronic apparatus 有权
标题翻译：过程控制系统，过程控制方法和制造电子设备的方法
公开(公告)号：JP2007005367A
公开(公告)日：2007-01-11
申请号：JP2005180659
申请日：2005-06-21
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAMOTO JIYUNJI , USHIKU YUKIHIRO , AKIYAMA KAZUTAKA , HARAKAWA SHOICHI
IPC分类号： H01L21/02 , G05B19/418 , H01L21/3065 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： Y02P90/12 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide a process control system capable of improving process capability and production yield. SOLUTION: The system is provided with a client computer 15 for creating a correspondence relation between a monitoring value of information about a manufacturing apparatus and feature amount to be acquired from a control parameter of the manufacturing apparatus and a finished shape in a reference manufacturing process, in the reference manufacturing process; production management system 14 for creating a processing recipe describing a control parameter calculated, based on the dimensions of a processing object structure of an actual manufacturing process, as a first set value of a first step in an actual manufacturing process; apparatus information collecting section 32 for collecting monitoring values of the apparatus information from the manufacturing apparatus, currently executing the actual manufacturing process at the first set value; feature amount calculating section 36 for calculating feature amount corresponding to the monitoring value, on the basis of the correspondence relation; parameter calculating section 38 for calculating a second set value of a second step, subsequent to the first step on the basis of the feature amount; and apparatus control unit 19 for changing the processing recipe by using a the second set value as a set value of the second step. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高处理能力和生产产量的过程控制系统。解决方案：系统设置有客户端计算机15，用于根据制造装置的控制参数和参考中的最终形状来创建关于制造装置的信息的监视值和要获取的特征量之间的对应关系制造过程中，在参考制造过程中; 生产管理系统14，用于基于实际制造过程的处理对象结构的尺寸，将实际制造过程中的第一步骤的第一设定值计算出的描述控制参数的处理配方; 装置信息收集部分32，用于收集来自制造装置的装置信息的监视值，当前以第一设定值执行实际制造过程; 特征量计算部36，用于基于对应关系计算与监视值对应的特征量; 参数计算部38，用于基于特征量计算第一步骤之后的第二步骤的第二设定值; 以及用于通过使用第二设定值作为第二步骤的设定值来改变处理配方的设备控制单元19。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JPH10150087A METHOD AND APPARATUS FOR EVALUATING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH10150087A
公开(公告)日：1998-06-02
申请号：JP30932996
申请日：1996-11-20
申请人： TOSHIBA CORP
发明人： SUGAMOTO JIYUNJI
IPC分类号： G01N21/64 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To attain quick and accurate measurement and evaluation of photoluminescence light in a semiconductor substrate of compound semiconductor epitaxially grown. SOLUTION: A laser beam 34 is illuminated on an upper surface of a semiconductor substrate 28 made of semiconductor epitaxially grown, excited photoluminescence(PL) light 39 is detected and evaluated. Upon the evaluation, the substrate 28 is placed and held on a ratable stage 23. The pulse-like laser beam 34 guided through an inlet optical fiber 31 is illuminated on the rotating substrate 28 through a condenser lens system 33. The reflected PL light 39 is received at an outlet optical fiber 32 provided adjacent to the inlet optical fiber 31, and guided to a measuring unit 36 for its evaluation. Thereby lifetime can be measured and accumulated under an initial condition of no holes and electrons and thus quick and accurate measurement and evaluation can be realized without any correction.

9. 发明专利

JP2007227953A Semiconductor wafer, manufacturing method thereof, method and device for manufacturing semiconductor device 有权
标题翻译：半导体晶体管及其制造方法，制造半导体器件的方法和器件
公开(公告)号：JP2007227953A
公开(公告)日：2007-09-06
申请号：JP2007096900
申请日：2007-04-02
申请人： Toshiba Corp , 株式会社東芝
发明人： IWASE MASAO , NITTA SHINICHI , MIYASHITA MORIYA , SUGAMOTO JIYUNJI , YAMADA KOREI , NAGANO HAJIME , TANZAWA KATSUJIRO , UDO SUKEMUNE , NADAHARA SOICHI , TSUCHIYA NORIHIKO , MATSUSHITA HIROSHI , USHIKU YUKIHIRO , ARIKADO TSUNETOSHI , OKUMURA KATSUYA
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To manufacture a semiconductor device of high throughput by suppressing variation in manufacture among wafers, using a circular wafer in which neither notch nor orientation flat is present. SOLUTION: A semiconductor wafer 60 comprises a wafer of which a first main surface on which a semiconductor element is formed is circular, a bevel part formed on the outer periphery of the wafer, and a reference ID mark 61 which is provided to the bevel part to show crystal orientation of the wafer. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2002110918A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002110918A
公开(公告)日：2002-04-12
申请号：JP2000294983
申请日：2000-09-27
申请人： TOSHIBA CORP
发明人： NAGANO HAJIME , SUGAMOTO JIYUNJI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To realize a semiconductor device capable of effectively suppressing propagation of the noise generated by a logic unit to a memory cell of a memory and having a simple structure in a process. SOLUTION: The semiconductor device comprises a logic unit 2 and the memory 3 on a silicon substrate 1 which satisfies >=1.0×108 [pieces/ cm3] and Log10( )/(WDZ)>=0.2.

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