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1. 发明专利

JP2007324620A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2007324620A
公开(公告)日：2007-12-13
申请号：JP2007204066
申请日：2007-08-06
申请人： Toshiba Corp , 株式会社東芝
发明人： TSUCHIYA NORIHIKO , USHIKU YUKIHIRO , MIKATA YUICHI , KAWASAKI ATSUKO , UMEZAWA KAORI
IPC分类号： H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To suppress the expansion of dislocation generated by the activate annealing of a high concentration impurity region by decreasing stress generated at a pattern edge periphery without performing long time activation heat treatment at a high temperature.
SOLUTION: In the formation of source-drain region of a MOS transistor with LDD structure, after forming a gate electrode 103 via a gate insulating film 102 on a p-type silicon substrate 101, ion implantation is performed using the gate electrode 103 or the like as an ion implantation mask, furthermore, an n-low concentration impurity region 106 is formed by heat treatment. Furthermore, a gate electrode side wall 104 adjacent to the gate electrode is formed. A source-drain region 108 is formed by forming an n+high concentration impurity region 107 by the ion implantation using the gate electrode side wall 104 as the ion implantation mask. Furthermore, an SiN film 109 is formed at a location adjacent to a first gate electrode side wall 104. After that, the activation heat treatment of the source-drain region 108 is performed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了通过降低在图案边缘周围产生的应力而抑制高浓度杂质区域的活化退火产生的位错扩大，而不进行高温下的长时间活化热处理。解决方案：在具有LDD结构的MOS晶体管的源极 - 漏极区的形成中，在p型硅衬底101上经由栅极绝缘膜102形成栅电极103之后，使用栅电极 103等作为离子注入掩模，此外，通过热处理形成n低浓度杂质区域106。此外，形成与栅电极相邻的栅电极侧壁104。通过使用栅电极侧壁104作为离子注入掩模通过离子注入形成n +高浓度杂质区107来形成源极 - 漏极区108。此外，在与第一栅电极侧壁104相邻的位置处形成SiN膜109.之后，进行源极 - 漏极区108的活化热处理。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007088035A Process control system, process control method, and manufacturing method of electronic device 有权
标题翻译：过程控制系统，过程控制方法和电子设备的制造方法
公开(公告)号：JP2007088035A
公开(公告)日：2007-04-05
申请号：JP2005272019
申请日：2005-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAMOTO JIYUNJI , USHIKU YUKIHIRO
IPC分类号： H01L21/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a process control system capable of improvements of process capability and manufacturing yield.
SOLUTION: The system comprises a monitoring unit 18 for monitoring apparatus information of a manufacturing apparatus 16; an apparatus information collecting unit 10 for collecting monitored values of the apparatus information from the monitoring unit 18 in the course of execution of a manufacturing process; a correlation creating unit 11 for creating a correlation with a monitored value of the apparatus information, a processing parameter for controlling the manufacturing apparatus 16, and a feature amount obtained from a finished shape in a manufacturing process for a test wafer; a process management unit 12 for calculating a set value of the processing parameter of the manufacturing process on the basis of at least one of estimated values of feature amounts calculated on the basis of a correlation with respect to each of monitored values excepting the monitored values of the apparatus information in a manufacturing process for a plurality of reference wafers; an apparatus control unit 20 for controlling the manufacturing apparatus in accordance with a processing recipe where set values are described in processing steps.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够改善工艺能力和制造产量的工艺控制系统。解决方案：该系统包括用于监视制造装置16的装置信息的监视单元18; 用于在执行制造过程的过程中从监视单元18收集设备信息的监视值的装置信息收集单元10; 相关制造单元11，用于产生与装置信息的监视值的相关性，用于控制制造装置16的处理参数，以及在测试晶片的制造过程中从最终形状获得的特征量; 过程管理单元12，用于基于除了监视值的监视值之外的每个监视值的基于相关性计算的特征量的估计值中的至少一个来计算制造过程的处理参数的设定值在多个参考晶片的制造过程中的装置信息; 装置控制单元20，用于根据在处理步骤中描述设定值的处理配方控制制造装置。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007005367A Process control system, process control method and method of manufacturing electronic apparatus 有权
标题翻译：过程控制系统，过程控制方法和制造电子设备的方法
公开(公告)号：JP2007005367A
公开(公告)日：2007-01-11
申请号：JP2005180659
申请日：2005-06-21
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAMOTO JIYUNJI , USHIKU YUKIHIRO , AKIYAMA KAZUTAKA , HARAKAWA SHOICHI
IPC分类号： H01L21/02 , G05B19/418 , H01L21/3065 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： Y02P90/12 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide a process control system capable of improving process capability and production yield. SOLUTION: The system is provided with a client computer 15 for creating a correspondence relation between a monitoring value of information about a manufacturing apparatus and feature amount to be acquired from a control parameter of the manufacturing apparatus and a finished shape in a reference manufacturing process, in the reference manufacturing process; production management system 14 for creating a processing recipe describing a control parameter calculated, based on the dimensions of a processing object structure of an actual manufacturing process, as a first set value of a first step in an actual manufacturing process; apparatus information collecting section 32 for collecting monitoring values of the apparatus information from the manufacturing apparatus, currently executing the actual manufacturing process at the first set value; feature amount calculating section 36 for calculating feature amount corresponding to the monitoring value, on the basis of the correspondence relation; parameter calculating section 38 for calculating a second set value of a second step, subsequent to the first step on the basis of the feature amount; and apparatus control unit 19 for changing the processing recipe by using a the second set value as a set value of the second step. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高处理能力和生产产量的过程控制系统。解决方案：系统设置有客户端计算机15，用于根据制造装置的控制参数和参考中的最终形状来创建关于制造装置的信息的监视值和要获取的特征量之间的对应关系制造过程中，在参考制造过程中; 生产管理系统14，用于基于实际制造过程的处理对象结构的尺寸，将实际制造过程中的第一步骤的第一设定值计算出的描述控制参数的处理配方; 装置信息收集部分32，用于收集来自制造装置的装置信息的监视值，当前以第一设定值执行实际制造过程; 特征量计算部36，用于基于对应关系计算与监视值对应的特征量; 参数计算部38，用于基于特征量计算第一步骤之后的第二步骤的第二设定值; 以及用于通过使用第二设定值作为第二步骤的设定值来改变处理配方的设备控制单元19。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004124765A Method of estimating service life of rotating machine, and manufacturing device having rotating machine 有权
公开(公告)号：JP2004124765A
公开(公告)日：2004-04-22
申请号：JP2002287944
申请日：2002-09-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SAMATA SHUICHI , USHIKU YUKIHIRO , NAKAO TAKASHI , FURUHATA TAKEO
IPC分类号： F04B49/10 , F04C18/18 , F04C29/00
CPC分类号： F04C29/0085 , F04C18/18 , F04C28/28 , F04C2220/12 , F04C2220/30 , F04C2270/07 , F04C2270/80
摘要： PROBLEM TO BE SOLVED: To provide a method of estimating a service life of a stable and accurate rotating machine having high sensitivity.
SOLUTION: This method of estimating a service life of a rotating machine includes a step for determining a starting time of the abnormal condition just before the rotating machine for a monitor is stopped on the basis of a monitor time series data about a characteristic rate of the rotating machine for a monitor, which is used in a manufacturing process for a monitor, and for statistically analyzing the monitor time series data to obtain a value at the characteristic rate abnormal condition starting time as a threshold value of the determination of abnormality, a step for measuring the time series data of the characteristic rate of the motor current of the rotating machine to be diagnosed during the manufacturing process, a step for forming the diagnosis data for evaluation from the time series data, of which characteristic rate is fluctuated during the manufacturing process, and a step for determining the time when the diagnosis data for evaluation exceeds the threshold value as a service life of the rotating machine to be diagnosed.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003332457A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2003332457A
公开(公告)日：2003-11-21
申请号：JP2003123705
申请日：2003-04-28
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , INABA SATOSHI , TAKAHASHI MINORU , YAGISHITA JUNJI , OKAYAMA YASUNORI , MATSUSHITA YOSHIAKI , KUBOTA HIROYASU , TSUCHIYA NORIHIKO , NUMANO MASAKUNI , HAYASHI YOSHIKI
IPC分类号： H01L21/76 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L27/08 , H01L27/088 , H01L27/092 , H01L27/108 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, preventing crystal defects caused by an embedded element isolation or introduction of impurities. SOLUTION: The semiconductor device is equipped with a semiconductor substrate and a MOS-type semiconductor element formed in the element region of the semiconductor substrate while at least one corner of the element region or the end parts of the same, which are superposed on a gate electrode, are given a concentration of impurities, which is lower than those of the element region. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种半导体器件，防止嵌入元件分离或引入杂质引起的晶体缺陷。解决方案：半导体器件配备有半导体衬底和形成在半导体衬底的元件区域中的MOS型半导体元件，而元件区域或其端部的至少一个角是重叠的在栅电极上给出的杂质浓度低于元件区域的浓度。版权所有（C）2004，JPO

6. 发明专利

JP2007274008A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007274008A
公开(公告)日：2007-10-18
申请号：JP2007165290
申请日：2007-06-22
申请人： Toshiba Corp , 株式会社東芝
发明人： TSUCHIYA NORIHIKO , USHIKU YUKIHIRO , MIKATA YUICHI , KAWASAKI ATSUKO , UMEZAWA KAORI
IPC分类号： H01L21/336 , H01L21/265 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To suppress extension of dislocation generated in activation thermal treatment at a high concentration impurity region by lowering stress generated around pattern edge without performing activation thermal treatment at high temperature for long hours.
SOLUTION: In a method of manufacturing a semiconductor device, when forming source and drain regions of a MOS transistor having LDD structure, after forming a gate electrode 103 on a p-type silicon substrate 101 via a gate insulation film 102, ion injection is performed with the gate electrode 103 and the like being an ion injection mask, and an n-type low concentration impurity region 106 is formed by thermal treatment. Further, a side wall 104 of the gate electrode is formed, which adjoins the gate electrode. With the side wall 104 of the gate electrode and the like being the ion injection mask, an n+ high concentration impurity region 107 is formed by ion injection and source and drain regions 108 are formed. Moreover, the side wall 105 of a second gate electrode is formed, which adjoins the side wall 104 of the first gate electrode. After that, activation thermal treatment is performed for the source and drain regions 108.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过降低在图案边缘周围产生的应力，抑制在高浓度杂质区域的活化热处理中产生的位错扩展，而不需要在高温下进行长时间的活化热处理。解决方案：在制造半导体器件的方法中，当形成具有LDD结构的MOS晶体管的源极和漏极区域时，在p型硅衬底101上经由栅极绝缘膜102形成栅电极103之后，离子以栅电极103等为离子注入掩模进行注入，通过热处理形成n型低浓度杂质区域106。此外，形成与栅电极相邻的栅电极的侧壁104。通过栅极等的侧壁104为离子注入掩模，通过离子注入形成n +高浓度杂质区107，形成源极和漏极区108。此外，第二栅电极的侧壁105形成为邻接第一栅电极的侧壁104。之后，对源极和漏极区域108执行激活热处理。版权所有：（C）2008，JPO＆INPIT

7. 发明专利

JP2006099735A Process status management system, management server, process status management method, and process status management program 有权
标题翻译：流程状态管理系统，管理服务器，流程状态管理方法和流程状态管理程序
公开(公告)号：JP2006099735A
公开(公告)日：2006-04-13
申请号：JP2005217030
申请日：2005-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , KAKINUMA HIDENORI , MIKI TSUTOMU , SUGAMOTO JIYUNJI , OGAWA AKIRA , OKAWACHI YOSHINORI , INOUE GIICHI , INO TOMOMI
IPC分类号： G05B19/418 , G05B23/02
CPC分类号： G05B19/41865 , G05B2219/31372 , G05B2219/31395 , G05B2219/31455 , G06Q30/0283 , Y02P90/12 , Y02P90/18 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide a process status management system, management server, process status management method, and process status management program capable of effectively using data for management of many devices, thereby improving the effective operation rate, performance maintenance and process of the devices, and reducing wasteful investment for management. SOLUTION: The process status management system includes a plurality of devices 12 i , 12 i+1 , 12 i+2 , 12 i+3 , etc., a device group control server 11a for collectively controlling actions of the plurality of devices, a management information link part 142 for linking action management data of each of the plurality of devices with management information transmitted from the device group control server 11a, a management server 14a for analyzing linked data by a common application, and a management database 15 for storing the linked data. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够有效地使用数据来管理许多设备的过程状态管理系统，管理服务器，过程状态管理方法和过程状态管理程序，从而提高有效操作速率，性能维护和设备流程，减少浪费的管理投资。
解决方案：过程状态管理系统包括多个设备12，其中，12 i + 1 ，12 i + 2 ，12 用于集体控制多个设备的动作的设备组控制服务器11a，用于将多个设备中的每一个的动作管理数据与管理相关联的管理信息链接部分142 从设备组控制服务器11a发送的信息，用于通过公共应用分析链接数据的管理服务器14a，以及用于存储链接数据的管理数据库15。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2007227953A Semiconductor wafer, manufacturing method thereof, method and device for manufacturing semiconductor device 有权
标题翻译：半导体晶体管及其制造方法，制造半导体器件的方法和器件
公开(公告)号：JP2007227953A
公开(公告)日：2007-09-06
申请号：JP2007096900
申请日：2007-04-02
申请人： Toshiba Corp , 株式会社東芝
发明人： IWASE MASAO , NITTA SHINICHI , MIYASHITA MORIYA , SUGAMOTO JIYUNJI , YAMADA KOREI , NAGANO HAJIME , TANZAWA KATSUJIRO , UDO SUKEMUNE , NADAHARA SOICHI , TSUCHIYA NORIHIKO , MATSUSHITA HIROSHI , USHIKU YUKIHIRO , ARIKADO TSUNETOSHI , OKUMURA KATSUYA
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To manufacture a semiconductor device of high throughput by suppressing variation in manufacture among wafers, using a circular wafer in which neither notch nor orientation flat is present. SOLUTION: A semiconductor wafer 60 comprises a wafer of which a first main surface on which a semiconductor element is formed is circular, a bevel part formed on the outer periphery of the wafer, and a reference ID mark 61 which is provided to the bevel part to show crystal orientation of the wafer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过抑制晶片之间的制造变化来制造高通量的半导体器件，使用其中不存在凹口和取向平面的圆形晶片。解决方案：半导体晶片60包括其上形成有半导体元件的第一主表面是圆形的晶片，形成在晶片的外周上的斜面部分和参考ID标记61，斜面部分显示晶片的晶体取向。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006157029A Manufacturing system and method of semiconductor device 有权
标题翻译：制造系统和半导体器件的方法
公开(公告)号：JP2006157029A
公开(公告)日：2006-06-15
申请号：JP2005351128
申请日：2005-12-05
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , OGAWA AKIRA , KAKINUMA HIDENORI , SHUDO SHUNJI , ABE MASAYASU , AKIYAMA TATSUO , KOMATSU SHIGERU
IPC分类号： H01L21/02 , C23C16/52 , H01L21/00 , H01L21/3065 , H01L21/31 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing system of a semiconductor device which properly manages a maintenance interval of the individual processing apparatus, extends an operating time of each processing apparatus, reducing a wafer inspection process performed at the stage of completing each semiconductor manufacturing process, and shortens a manufacturing process period of a semiconductor device. SOLUTION: This system is provided with a processor 14 for executing process treatment using a semiconductor substrate 17, a self-diagonostic system 11a for receiving device information from the processor 14 and calculating an estimated quality value of the process treatment, an inspection device 19 for inspecting the result of the process treatment, and a computer 11. The computer 11 compares an inspection result and an estimated quality value, and maintains a parameter of the self-diagonostic system when the estimated quality value is valid and changes a parameter of the self-diagonostic system when the estimated quality value is invalid. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供适当地管理各个处理装置的维护间隔的半导体装置的制造系统，延长每个处理装置的操作时间，减少在完成每个处理装置的阶段执行的晶片检查处理半导体制造工艺，缩短半导体器件的制造工艺周期。解决方案：该系统设置有用于执行使用半导体衬底17的处理处理的处理器14，用于从处理器14接收设备信息并计算处理处理的估计质量值的自我对角线系统11a，检查用于检查处理结果的装置19和计算机11.计算机11将检查结果与估计的质量值进行比较，并且当估计的质量值有效时维持自我对角系统的参数，并且改变参数的估计质量值无效的自我对角线系统。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2006100742A Defect determination method and defect determination system 审中-公开
标题翻译：缺陷确定方法和缺陷确定系统
公开(公告)号：JP2006100742A
公开(公告)日：2006-04-13
申请号：JP2004287948
申请日：2004-09-30
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , INO TOMOMI
IPC分类号： H01L21/02 , H01L21/66
CPC分类号： G05B23/024
摘要： PROBLEM TO BE SOLVED: To provide a method for determining a defect of a manufacturing condition affecting a yield.
SOLUTION: The method is employed to obtain a state variable data corresponding to the manufacturing condition of the manufacturing equipment which is carried out under each manufacturing condition for the manufacturing processes of a plurality of products, to prepare a figure of wave of a first series of data of first characteristic quantity corresponding to the state variable data for each of the products, to classify a first similar series of data into similar groups from the correlation between the figures of wave, to prepare a first visualized data table which is shown by the first figure pattern visualizing the magnitude of the first characteristic quantity for each similar group, to obtain the result showing measurement and inspection of a plurality of products, to add a second series of data of a second characteristic quantity into a similar group, and to prepare a second visualized data table which is shown by the second figure pattern visualizing the magnitude of the second characteristic quantity corresponding to the result.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种确定影响产量的制造条件的缺陷的方法。解决方案：该方法用于获得与在多个产品的制造过程中的每个制造条件下执行的制造设备的制造条件相对应的状态变量数据，以准备多个产品的波形对应于每个产品的状态变量数据的第一特征量的第一系列数据，根据波形图之间的相关性将第一类似的数据类型分类成类似的组，以准备显示的第一可视化数据表通过第一图形图形可视化每个相似组的第一特征量的大小，以获得显示多个产品的测量和检查的结果，以将第二特征量的第二系列数据添加到相似组中，以及以准备第二可视化数据表，其由第二图形图示出，可视化第二图的大小特征量对应于结果。版权所有（C）2006，JPO＆NCIPI

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