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1. 发明专利

JP2009129421A Semiconductor production management system and method 审中-公开
标题翻译：半导体生产管理系统与方法
公开(公告)号：JP2009129421A
公开(公告)日：2009-06-11
申请号：JP2007307295
申请日：2007-11-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HARAKAWA SHOICHI
IPC分类号： G05B19/418 , H01L21/02
CPC分类号： Y02P90/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor production management system which enables an easy determination of manufacturing conditions in divided lots, and shortening of product development period. SOLUTION: The semiconductor production management system includes: a plurality of processing devices 5, 6 to process semiconductor wafers; a flow memory module 2 that stores a process flow which defines a flow of a lot including a plurality of semiconductor wafers or divided lots obtained by dividing the lot into a plurality of pieces, and defines divided names including information of process conditions for each process of the divided lots; a fabrication management module 1 which manages the progress of the process flow of the lot or the divided lots based on the process flow, and outputs the combination of processing data outputted from the processing devices 5, 6 after processing of the divided lots and the divided name corresponding to this process; database 3 which stores this combination of processing data and the divided name outputted from the fabrication management module 1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够容易地确定分批的制造条件并缩短产品开发周期的半导体生产管理系统。解决方案：半导体生产管理系统包括：处理半导体晶片的多个处理装置5,6; 流量存储器模块2，其存储限定包括多个半导体晶片的批次的流程的处理流程或者通过将批次分割成多个部件而获得的分批批次，并且定义分割名称，其包括每个处理的处理条件信息分批; 制造管理模块1，其基于处理流程来管理批次或分批批次的处理流程的进度，并且在处理分割批次之后输出从处理装置5,6输出的处理数据的组合，并且分割名称对应于此过程; 数据库3，其存储处理数据的组合和从制造管理模块1输出的分割名称。版权所有：（C）2009，JPO＆INPIT

2. 发明专利

JP2014007273A Semiconductor processing system, process control device, and device controller 审中-公开
标题翻译：半导体处理系统，过程控制器件和器件控制器
公开(公告)号：JP2014007273A
公开(公告)日：2014-01-16
申请号：JP2012141719
申请日：2012-06-25
申请人： Toshiba Corp , 株式会社東芝
发明人： HARAKAWA SHOICHI
IPC分类号： H01L21/02 , G05B23/02
摘要： PROBLEM TO BE SOLVED: To improve calculation accuracy of control parameters of a processing device which operates on an APC (Advanced Process Control) system.SOLUTION: In a semiconductor processing system, a state confirmation part 4B confirms a state of each of processing devices 1A-1C with each of the processing devices 1A-1C via a communication interface 7 when a calculation request of a control parameter of each of the processing devices 1A-1C is received by a control reception processing part 4A, and a process control device 4 adjusts the control parameters of the processing devices 1A-1C with reference to the states of the processing devices 1A-1C replied to the state confirmation part 4B.
摘要翻译：要解决的问题：提高在APC（高级过程控制）系统上操作的处理设备的控制参数的计算精度。解决方案：在半导体处理系统中，状态确认部分4B确认每个处理设备1A的状态当控制接收处理部分4A接收到每个处理装置1A-1C的控制参数的计算请求时，通过通信接口7与处理装置1A-1C中的每一个对应-1C，并且处理控制装置4调整参照处理装置1A-1C的状态对处理装置1A-1C的控制参数答复给状态确认部4B。

3. 发明专利

JP2009283666A Exposure device and semiconductor manufacturing system 审中-公开
标题翻译：曝光装置和半导体制造系统
公开(公告)号：JP2009283666A
公开(公告)日：2009-12-03
申请号：JP2008134096
申请日：2008-05-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HARAKAWA SHOICHI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve a manufacturing yield.
SOLUTION: A semiconductor manufacturing system includes: an operation unit 103 which calculates correction doses for a plurality of coordinates for adjusting the dimensions of a resist pattern formed on a wafer by exposure by a predetermined dose at the plurality of coordinates into predetermined target dimensions, calculates a first approximate function approximating the distribution of the correction dose in the wafer surface, calculates a second approximate function approximating the first approximate function after a trimming processing, the trimming processing being carried out so as to settle the first approximate function between a predetermined upper limit dose and lower limit dose, and outputs recipe parameters including factors of the second approximate function; and an exposure device 105 carrying out exposure processing depending on the recipe parameter.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高制造成品率。解决方案：半导体制造系统包括：操作单元103，其计算多个坐标的校正剂量，用于通过在多个坐标处以预定剂量曝光而将形成在晶片上的抗蚀剂图案的尺寸调整为预定目标计算近似于晶片表面中的校正剂量分布的第一近似函数，计算在修剪处理之后接近第一近似函数的第二近似函数，进行修整处理以便将第一近似函数在a 预定上限剂量和下限剂量，并输出包括第二近似函数因子的配方参数; 以及根据配方参数进行曝光处理的曝光装置105。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007266482A Production system and manufacturing method of electronic device 审中-公开
标题翻译：电子设备的生产系统和制造方法
公开(公告)号：JP2007266482A
公开(公告)日：2007-10-11
申请号：JP2006091940
申请日：2006-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAZAKI KUNIHIRO , OGAWA YOSHIHIRO , HARAKAWA SHOICHI
IPC分类号： H01L21/02 , H01L21/027
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/32275 , G05B2219/45031 , Y02P90/20 , Y02P90/265
摘要： PROBLEM TO BE SOLVED: To provide a production system capable of suppressing deterioration in production yield. SOLUTION: The system is provided with a recipe creating unit 12 for creating a processing recipe, describing processing conditions satisfying the characteristics of the electronic devices and manufacturing standards of yield; and an additional recipe describing additional processing conditions, decided so as to satisfy the manufacturing standards, on the basis of the relation with a time interval from the completion time of a first process to the start time of a second process, the characteristics, and the yield, for each of the first process to be executed for a substrate in a first manufacturing apparatus and the second process to be executed for the substrate in a second manufacturing apparatus, after the first process in order to manufacture electronic devices; and a recipe instructing section 36 for instructing the additional recipe for the processing of the substrate, if the time interval from the completion time of the first process to the start time of the second process is not shorter than a reference time. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制生产率降低的生产系统。解决方案：该系统设有配方生成单元12，用于创建处理配方，描述满足电子设备特性的处理条件和产量的制造标准; 根据与从第一处理的完成时间到第二处理的开始时间的时间间隔的关系，确定特征和特征，并且描述额外的处理条件的附加配方，以便满足制造标准对第一制造装置中的基板执行的第一处理的第一处理和第二制造装置中的基板的第二处理的制造，在制造电子装置的第一处理之后，以及如果从第一处理的完成时间到第二处理的开始时间的时间间隔不小于参考时间，则指示附加配方用于处理衬底的配方指令部36。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007027429A Exposure device correcting method, exposure device correcting system, and manufacturing method of semiconductor device 审中-公开
标题翻译：曝光装置校正方法，曝光装置校正系统以及半导体装置的制造方法
公开(公告)号：JP2007027429A
公开(公告)日：2007-02-01
申请号：JP2005207668
申请日：2005-07-15
申请人： Toshiba Corp , 株式会社東芝
发明人： HARAKAWA SHOICHI , IKEDA MAKOTO , KONO TAKUYA
IPC分类号： H01L21/027
CPC分类号： G03F7/70458
摘要： PROBLEM TO BE SOLVED: To provide an exposure device correcting system which can reduce the misalignment of a plurality of transfer patterns without impairing the transfer accuracy of an exposure device. SOLUTION: The system has a deviation calculator 320 for calculating the misalignment of a transferred first inspection pattern, and a second inspection pattern which is transferred as aligned with the first inspection pattern; an approximation part 322 which approximates the relation between misalignment and a coordinate system including the second inspection pattern by using a plurality of parameters; a rounding part 325 which rounds a plurality of parameters within an effective range limited by the exposure device which transfers the second inspection pattern; a back calculator 324 for calculating back the calculated deviation of the first inspection pattern and the second inspection pattern using the rounded value as an estimated amount; a residue calculator 327 which deducts the calculated deviation from the misalignment; an estimated amount storage 206 for storing an estimated amount; and a control device 151 for correcting the exposure device based on the sum of the estimated amount stored in the estimated amount storage 206 and reduces the misalignment. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减少多个转印图案的未对准而不损害曝光装置的转印精度的曝光装置校正系统。解决方案：系统具有用于计算转移的第一检查图案的未对准的偏差计算器320和与第一检查图案对准地转印的第二检查图案; 近似部分322，通过使用多个参数来近似未对准与包括第二检查图案的坐标系之间的关系; 舍入部325，其在由传送第二检查图案的曝光装置限制的有效范围内舍入多个参数; 返回计算器324，用于使用舍入值计算第一检查图案的计算偏差和第二检查图案作为估计量; 残差计算器327，其从所述未对准中扣除计算出的偏差; 用于存储估计量的估计量存储器206; 以及用于基于存储在估计量存储器206中的估计量的总和来校正曝光装置的控制装置151，并且减小了未对准。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007005367A Process control system, process control method and method of manufacturing electronic apparatus 有权
标题翻译：过程控制系统，过程控制方法和制造电子设备的方法
公开(公告)号：JP2007005367A
公开(公告)日：2007-01-11
申请号：JP2005180659
申请日：2005-06-21
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAMOTO JIYUNJI , USHIKU YUKIHIRO , AKIYAMA KAZUTAKA , HARAKAWA SHOICHI
IPC分类号： H01L21/02 , G05B19/418 , H01L21/3065 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： Y02P90/12 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide a process control system capable of improving process capability and production yield. SOLUTION: The system is provided with a client computer 15 for creating a correspondence relation between a monitoring value of information about a manufacturing apparatus and feature amount to be acquired from a control parameter of the manufacturing apparatus and a finished shape in a reference manufacturing process, in the reference manufacturing process; production management system 14 for creating a processing recipe describing a control parameter calculated, based on the dimensions of a processing object structure of an actual manufacturing process, as a first set value of a first step in an actual manufacturing process; apparatus information collecting section 32 for collecting monitoring values of the apparatus information from the manufacturing apparatus, currently executing the actual manufacturing process at the first set value; feature amount calculating section 36 for calculating feature amount corresponding to the monitoring value, on the basis of the correspondence relation; parameter calculating section 38 for calculating a second set value of a second step, subsequent to the first step on the basis of the feature amount; and apparatus control unit 19 for changing the processing recipe by using a the second set value as a set value of the second step. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高处理能力和生产产量的过程控制系统。解决方案：系统设置有客户端计算机15，用于根据制造装置的控制参数和参考中的最终形状来创建关于制造装置的信息的监视值和要获取的特征量之间的对应关系制造过程中，在参考制造过程中; 生产管理系统14，用于基于实际制造过程的处理对象结构的尺寸，将实际制造过程中的第一步骤的第一设定值计算出的描述控制参数的处理配方; 装置信息收集部分32，用于收集来自制造装置的装置信息的监视值，当前以第一设定值执行实际制造过程; 特征量计算部36，用于基于对应关系计算与监视值对应的特征量; 参数计算部38，用于基于特征量计算第一步骤之后的第二步骤的第二设定值; 以及用于通过使用第二设定值作为第二步骤的设定值来改变处理配方的设备控制单元19。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2004304044A Flow conversion device, flow conversion method, manufacturing process control system, and method and program for controlling manufacturing process 审中-公开
标题翻译：流量转换装置，流量转换方法，制造过程控制系统以及用于控制制造过程的方法和程序
公开(公告)号：JP2004304044A
公开(公告)日：2004-10-28
申请号：JP2003097008
申请日：2003-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SATOGUCHI YUUICHI , HARAKAWA SHOICHI , ASAMURA TAKESHI , KITAJIMA KOJI
IPC分类号： H01L21/02 , G05B19/418
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/45031 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide a flow conversion device that can efficiently move a process flow. SOLUTION: A flow division part 15 divides a process described in a conversion target process flow into lower processes according to a process division table and generates an intermediate lower process flow. A compatible flow generation part 16 replaces the lower process with a lower compatible process according to a lower process compatible table showing the lower compatible process of a manufacturing line 40 equivalent to the lower process, and it adds an intermediate lower compatible process flow thereto. A flow check part 17 generates a lower process flow usable for the manufacturing line 40 from the intermediate lower process flow and the intermediate lower compatible process flow according to a usable process table. A flow selection part 18 calculates attributes on the basis of an attribute definition table defining the attributes of the lower process and selects the lower process flow. An external storage device 20 stores the process division table, the lower process compatible table, the usable table, and the attribute definition table. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以有效地移动处理流程的流量转换装置。解决方案：流程分割部15根据处理分割表将转换目标处理流程中描述的处理划分为较低的处理，并生成中间较低的处理流程。兼容的流产生部分16根据与较低过程相当的生产线40的较低的兼容过程的较低的兼容过程的较低的兼容性过程，用较低的兼容过程代替较低的过程，并且增加了一个较低兼容的中间流程。流量检查部件17根据可用的处理表从中间下部处理流程和中间较低兼容处理流程生成可用于生产线40的较低处理流程。流选择部分18基于定义较低进程的属性的属性定义表来计算属性，并选择较低的处理流程。外部存储装置20存储处理分割表，下部处理兼容表，可用表和属性定义表。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2008085229A System for determining measurement target, method of determining measurement target and method of manufacturing semiconductor device 审中-公开
标题翻译：用于确定测量目标的系统，确定测量目标的方法和制造半导体器件的方法
公开(公告)号：JP2008085229A
公开(公告)日：2008-04-10
申请号：JP2006265983
申请日：2006-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HARAKAWA SHOICHI
IPC分类号： H01L21/02 , G01R31/26 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a system for determining a measurement target capable of determining a measurement target appropriate for a plurality of measurement purposes to shorten a work period.
SOLUTION: The system for determining a measurement target is provided with: a program selection unit 101 for selecting a plurality of candidate-determining programs corresponding to measurement items, in relation to a specified lot and a specified process in a plurality of processes; a candidate-determination unit 102 which executes the plurality of candidate-determining programs and determines a wafer eligible to a candidate for measurement in a specified work process for every candidate-determining program from a plurality of wafers making up the specified lot; and a unit for determining a measurement target 103 which superimposes pieces of information about the candidates for measurement each determined by the every candidate-determining program and determines a wafer to be designated as a measurement target.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于确定能够确定适于多个测量目的的测量目标的测量目标的系统，以缩短工作周期。解决方案：用于确定测量目标的系统具有：程序选择单元101，用于相对于指定批次选择与测量项目相对应的多个候选确定程序，以及多个处理中的指定处理 ; 候选确定单元102，其从组成指定批次的多个晶片中执行多个候选确定程序并确定在每个候选确定程序的指定工作过程中符合候选测量的晶片; 以及用于确定测量目标103的单元，该单元叠加由每个候选确定程序确定的每个测量候选的信息，并确定要被指定为测量对象的晶片。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006278767A System and method for overlay control 审中-公开
标题翻译：用于覆盖控制的系统和方法
公开(公告)号：JP2006278767A
公开(公告)日：2006-10-12
申请号：JP2005096186
申请日：2005-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEDA MAKOTO , HARAKAWA SHOICHI , KONO TAKUYA
IPC分类号： H01L21/027 , G03F7/20 , H01L21/02
CPC分类号： G03F7/70633 , G03F7/70525
摘要： PROBLEM TO BE SOLVED: To provide an overlay control system for warranting overlay accuracy with respect to a plurality of lower layers. SOLUTION: The overlay control system includes a processing data receiver 30 that receives and registers processing data, wherein a name of an exposure step for a target layer subjected to exposure processing and a control setting value for overlay control applied to the target layer and the lower layers under the target layer are described; an inspection data receiver 32 for receiving and registering a plurality of inspection data, wherein names of a plurality of inspection steps for inspecting the overlay between the target layer and each of a plurality of the lower layers and a plurality of inspected values are respectively described; a merging section 33 that searches a merging condition table wherein the relation between the exposure step and the inspection steps are described by using the name of the inspection step for a key to acquire the name of the exposure step, and merges the processing data acquired through searching by each of the name of the exposure step and the name of the inspection step with a plurality of the inspection data to register correction data; and a calculator 36 for calculating a correction control setting value on the basis of a plurality of the inspection values of the correction data. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种覆盖控制系统，用于保证相对于多个下层的重叠精度。解决方案：覆盖控制系统包括接收和登记处理数据的处理数据接收器30，其中经受曝光处理的目标层的曝光步骤的名称和应用于目标层的覆盖控制的控制设置值并描述目标层下的下层; 分别描述用于接收和登记多个检查数据的检查数据接收器32，其中分别描述用于检查目标层和多个下层中的每一个的覆盖层的多个检查步骤的名称和多个检查值; 搜索合并条件表的合并部33，其中通过使用用于获取曝光步骤的名称的键的检查步骤的名称来描述曝光步骤和检查步骤之间的关系，并且合并通过利用多个检查数据对曝光步骤的名称和检查步骤的名称进行搜索以记录校正数据; 以及计算器36，用于根据校正数据的多个检查值来计算校正控制设定值。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005197362A System and method for exposure processing 审中-公开
标题翻译：曝光加工系统及方法
公开(公告)号：JP2005197362A
公开(公告)日：2005-07-21
申请号：JP2004000515
申请日：2004-01-05
申请人： Toshiba Corp , 株式会社東芝
发明人： KONO TAKUYA , KOMINE NOBUHIRO , TOUKI TATSUHIKO , HARAKAWA SHOICHI , IKEDA MAKOTO
IPC分类号： G03F7/30 , G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00 , G03F7/20 , G03F9/00 , G03G15/08 , G21K5/00 , H01L21/00 , H01L21/027
CPC分类号： H01L21/67253
摘要： PROBLEM TO BE SOLVED: To provide an exposure processing system which easily prevents the size variation in a wafer plane between a plurality of wafers.
SOLUTION: The exposure processing system comprises a coat developer 13 having a plurality of hot plate units and a plurality of developer units, an aligner 14, and a controller 22 for controlling the aligner 14 so as to expose a wafer under process, using correcting data for correcting the size variation of a resist pattern in a wafer plane caused by a paired heater unit-developer unit used for the wafer under process among a plurality of paired heater unit-developer units.
COPYRIGHT: (C)2005,JPO&NCIPI

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