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1. 发明专利

JP2006108716A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006108716A
公开(公告)日：2006-04-20
申请号：JP2006006704
申请日：2006-01-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO MASAMI , TOMITA HIROSHI , MIYAZAKI KUNIHIRO , NADAHARA SOICHI
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor devices which constitutes a method of etching that replaces selective etching of SiN film that uses phosphoric acid.
SOLUTION: A process is provided for selectively etching a SiN film or a CVD-deposited SiON film with respect to a SiO
2 film, a Si substrate, or a Si film at the azeotropic temperature of an etching solution, which is a mixed solution of H
2 SO
4 and H
2 O having an azeotropic point of 150°C or higher.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种构成蚀刻方法的半导体器件的制造方法，其替代使用磷酸的SiN膜的选择性蚀刻。解决方案：提供了一种工艺，用于相对于SiO 2 SB，SiO 2，Si衬底或Si膜在共沸温度下选择性地蚀刻SiN膜或CVD沉积的SiON膜一种蚀刻溶液，它是具有150℃或更高共沸点的H SB 2 SO 4 SBS和H SB 2 O 2的混合溶液。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005310948A Etching device and etching solution management method 有权
标题翻译：蚀刻装置和蚀刻解决方案管理方法
公开(公告)号：JP2005310948A
公开(公告)日：2005-11-04
申请号：JP2004124070
申请日：2004-04-20
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , IIMORI HIROYASU , SAITO MASAMI , OGAWA YOSHIHIRO , TOMITA HIROSHI , NADAHARA SOICHI
IPC分类号： C23F1/08 , B44C1/22 , C23F1/00 , C23F1/16 , H01L21/00 , H01L21/306 , H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： PROBLEM TO BE SOLVED: To provide an etching device easy in process control and controllable under a fixed condition about etching performance with a small amount of a chemical, and an etching solution management method.
SOLUTION: The etching device is provided with: a processing tub 1 for accommodating an etching solution not higher than a specified water concentration containing water, a first component, and a second component; a circulating path C1 for circulating the etching solution; a concentration control unit 6 for extracting the etching solution from the circulating path C1, and for controlling concentrations of the first component, the second component, and water, respectively; and a supplement chemical supply part 7 for supplying the supplement chemical to the processing tub 1 containing the first component whose concentration is higher than the concentration of the used first component.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种易于处理控制的蚀刻装置，并且在少量化学品的蚀刻性能的固定条件下可控制的蚀刻装置以及蚀刻溶液管理方法。解决方案：蚀刻装置设置有：用于容纳不高于含有水的特定水浓度的蚀刻溶液的处理槽1，第一组分和第二组分; 用于使蚀刻溶液循环的循环路径C1; 浓度控制单元6，用于从循环路径C1中提取蚀刻溶液，并分别控制第一组分，第二组分和水的浓度; 以及补充化学物供给部7，用于将补充化学品供给含有浓度高于所使用的第一成分的浓度的第一成分的处理槽1。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2007295011A Method of drying semiconductor wafer 审中-公开
标题翻译：干燥半导体滤波器的方法
公开(公告)号：JP2007295011A
公开(公告)日：2007-11-08
申请号：JP2007208858
申请日：2007-08-10
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , TOMITA HIROSHI , UOZUMI NOBUHIRO , NADAHARA SOICHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of drying wafers which remarkably decreases occurrence of watermarks on wafers in manufacturing semiconductor devices, and to provide a drying apparatus for carrying out the method.
SOLUTION: The drying apparatus and drying method for wafers are as follows. Wafers 1 that have been subjected to a cleaning process are transferred into a chamber of the dryer, and are continued to be cooled by a cooling unit 8 throughout the period from beginning to end of drying. The method of cooling is to equip the cooling unit at the position of supplying a purging gas 9 such as nitrogen that is to be introduced into the chamber, and to introduce the purging nitrogen into the chamber under a cooled condition. By applying the cooled nitrogen blow to the wafers that have been transferred into the chamber, the wafers are cooled, and water droplets having remained on the wafers since the cleaning process are also cooled similarly. As for water glass which may appear after drying, occurrence of water-glass is suppressed since the water-glass reaction rate is lower as the remaining water-droplet temperature is lower, and degradation of the manufacturing yield is prevented.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种干燥晶片的方法，其在制造半导体器件中在晶片上显着降低水印的发生，并且提供一种用于实施该方法的干燥装置。解决方案：晶片的干燥装置和干燥方法如下。经过清洗处理的晶片1被转移到干燥器的室中，并且在从干燥开始到结束的整个时期内继续被冷却单元8冷却。冷却方法是将冷却单元设置在供给被引入室内的净化气体9（例如氮气）的位置，并在冷却状态下将清洗氮气引入室内。通过将冷却的氮气吹送到已经转移到室中的晶片，晶片被冷却，并且清洁过程中保留在晶片上的水滴也被类似地冷却。对于干燥后可能出现的水玻璃，由于水玻璃反应速率随着剩余水滴温度降低而降低，因此水玻璃的发生被抑制，并且防止了制造产率的劣化。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007227953A Semiconductor wafer, manufacturing method thereof, method and device for manufacturing semiconductor device 有权
标题翻译：半导体晶体管及其制造方法，制造半导体器件的方法和器件
公开(公告)号：JP2007227953A
公开(公告)日：2007-09-06
申请号：JP2007096900
申请日：2007-04-02
申请人： Toshiba Corp , 株式会社東芝
发明人： IWASE MASAO , NITTA SHINICHI , MIYASHITA MORIYA , SUGAMOTO JIYUNJI , YAMADA KOREI , NAGANO HAJIME , TANZAWA KATSUJIRO , UDO SUKEMUNE , NADAHARA SOICHI , TSUCHIYA NORIHIKO , MATSUSHITA HIROSHI , USHIKU YUKIHIRO , ARIKADO TSUNETOSHI , OKUMURA KATSUYA
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To manufacture a semiconductor device of high throughput by suppressing variation in manufacture among wafers, using a circular wafer in which neither notch nor orientation flat is present. SOLUTION: A semiconductor wafer 60 comprises a wafer of which a first main surface on which a semiconductor element is formed is circular, a bevel part formed on the outer periphery of the wafer, and a reference ID mark 61 which is provided to the bevel part to show crystal orientation of the wafer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过抑制晶片之间的制造变化来制造高通量的半导体器件，使用其中不存在凹口和取向平面的圆形晶片。解决方案：半导体晶片60包括其上形成有半导体元件的第一主表面是圆形的晶片，形成在晶片的外周上的斜面部分和参考ID标记61，斜面部分显示晶片的晶体取向。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006270114A Method for processing semiconductor substrate 审中-公开
标题翻译：加工半导体基板的方法
公开(公告)号：JP2006270114A
公开(公告)日：2006-10-05
申请号：JP2006135291
申请日：2006-05-15
申请人： Toshiba Corp , 株式会社東芝
发明人： NADAHARA SOICHI , YAMABE KIKUO , KOBAYASHI HIDEYUKI , TERASAKA KUNIHIRO , AKU NAOHIKO , YAMAMOTO AKITO
IPC分类号： H01L21/322
摘要： PROBLEM TO BE SOLVED: To provide a method for processing a semiconductor substrate, which can inhibit the generation of minute defects and oxygen deposition which cause element characteristics to deteriorate. SOLUTION: In the method for processing the semiconductor substrate having a step of subjecting the semiconductor substrate, of which the surface is exposed, to a heat treatment under a gaseous atmosphere, in order to control so as to inhibit the deposition and the growth of oxygen in the semiconductor substrate by the heat treatment and the heat treatment steps before the heat treatment, a heat treatment step in an argon gas atmosphere before the heat treatment are performed under heat treating temperatures and heat treating time which are below certain limits. Thereafter, the heat treatment is performed under the argon gas atmosphere at temperatures not lower than 1,100°C. The internal minute defect concentration of the region, whose depth is 50 μm deeper than that of the surface of the semiconductor substrate, is made to be 1×10 9 particles/cm 3 or less, and the internal minute defect density of the region, whose depth is 10 μm deeper than that of the surface, is made to be 1×10 7 particles/cm 3 or less. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以抑制导致元件特性劣化的微小缺陷和氧沉积的产生的半导体衬底的处理方法。解决方案：在用于处理半导体衬底的方法中，该半导体衬底具有使表面暴露于其中的半导体衬底经受气氛气氛下的热处理的步骤，以便控制以抑制沉积和通过热处理和热处理之前的热处理步骤在半导体衬底中生长氧，在热处理之前的氩气气氛中的热处理步骤在低于某一限度的热处理温度和热处理时间下进行。之后，在不低于1100℃的氩气气氛下进行热处理。将其深度比半导体衬底的表面深深50μm深的区域的内部微小缺陷浓度设为1×10 颗粒/ cm 3 SP SP >以下，深度比表面深10μm深的区域的内部微小缺陷密度为1×10 3 / SP>以下。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2003282386A Material supply system in semiconductor manufacturing plant 有权
标题翻译：半导体制造厂的材料供应系统
公开(公告)号：JP2003282386A
公开(公告)日：2003-10-03
申请号：JP2002088153
申请日：2002-03-27
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MIYAZAKI KUNIHIRO , NADAHARA SOICHI , USUDA KINYA , AKAHORI SHOJI , NAKAGAWA SOUTA , NAKAJIMA TAKESHI
IPC分类号： H01L21/02 , B24B57/02 , C11D11/00 , C23C16/52 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67276 , B24B37/04 , B24B57/02 , C11D11/0047 , C23C16/52 , G05B2219/32082 , H01L21/02052 , Y02P90/20 , Y10S210/90
摘要： PROBLEM TO BE SOLVED: To reduce the cost of a pure water supply system in a small scale plant manufacturing various products in small amount, without reducing the production efficiency. SOLUTION: The pure water supply system 10 produces pure water of various grades and supplies it to a piping, which passes circulating the use points such as a cleaner 31, a CMP machine 32, and a lithographic machine 33. A control 20, receiving a signal to start the use of the pure water from each point, determines whether it exceeds the supply capacity of the pure water of its grade. If it does not exceed, the control 20 sends a signal to the use point to permit the use of the pure water. When some other use point is using the pure water of the same grade, the control 20 can control the demanding use point, not to use the pure water of the grade, until it is informed of the finish of the current use. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了降低少量生产各种产品的小型工厂的纯净水供应系统的成本，而不降低生产效率。解决方案：纯水供应系统10产生各种等级的纯水，并将其供应给通过循环使用点的管道，诸如清洁器31，CMP机器32和平版印刷机33.控制器20 从每个点接收到开始使用纯净水的信号，确定它是否超过其等级的纯水的供应能力。如果不超过，则控制器20向使用点发送信号以允许使用纯净水。当其他使用点使用相同等级的纯水时，控制器20可以控制要求的使用点，不要使用等级的纯水，直到通知当前使用的完成。版权所有（C）2004，JPO

7. 发明专利

JP2008060594A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008060594A
公开(公告)日：2008-03-13
申请号：JP2007263671
申请日：2007-10-09
申请人： Toshiba Corp , 株式会社東芝
发明人： IINUMA TOSHIHIKO , SUGURO KYOICHI , NADAHARA SOICHI
IPC分类号： H01L21/28 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To actualize an excellent process stability even elements are fine sized, and to prevent the increase of resistance in a region formed a silicide.
SOLUTION: The method includes a step of forming a silicon region defined by an insulation film in a substrate main surface, a step of forming a silicon oxide film on the surface of the silicon region, a step of forming a mixed film including a first metal and a second metal on the substrate formed the silicon oxide film, a step of allowing the reduction of the silicon oxide film formed in the silicon region by the second metal by heat treatment, and a step of forming a silicide film only on the surface of the silicon region by allowing the reaction between the first metal and the silicon in the silicon region by heat treatment, wherein the first metal is Co, Ni, Pt or Pd, and the second metal is Ti, Zr, Hf, V, Nb, Ta or Cr.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了实现优异的工艺稳定性，均匀元件的尺寸精细，并且防止形成硅化物的区域中的电阻增加。解决方案：该方法包括在基板主表面中形成由绝缘膜限定的硅区域，在硅区域的表面上形成氧化硅膜的步骤，形成包括在基板上形成第一金属和第二金属，形成氧化硅膜，通过热处理使第二金属还原形成在硅区域中的氧化硅膜的步骤，以及仅在通过热处理允许硅区域中的第一金属和硅之间的反应，其中第一金属是Co，Ni，Pt或Pd，第二金属是Ti，Zr，Hf，V ，Nb，Ta或Cr。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007121314A Control method of oxygenation process 有权
标题翻译：氧化过程的控制方法
公开(公告)号：JP2007121314A
公开(公告)日：2007-05-17
申请号：JP2007005977
申请日：2007-01-15
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , SATO MOTOYUKI , NADAHARA SOICHI
IPC分类号： G01N21/33
摘要： PROBLEM TO BE SOLVED: To provide control method of oxygenation process for performing oxygenation of a material to be oxidized formed on processed substrate surface using ozone-dissolved sulfuric acid solution, which can determine the presence of the material to be oxidized.
SOLUTION: In this method, ozone is introduced continuously into a sulfuric acid solution to be dissolved within the sulfuric acid solution, while the sulfuric acid solution is made to react with ozone to generate peroxosulfuric acid, and ozone-sulfuric acid mixed solution is manufactured. Processed substrate with the material to be oxidized formed is put into this ozone-sulfuric acid mixed solution to oxidize the material to be oxidized. Then at least either the absorbance at 254 nm of wafer-introduced ozone-sulfuric acid mixed solution or at 150-220 nm of the mixed solution is measured. When the measured absorbance has reached a prescribed level, wafer is pulled out of the ozone-sulfuric acid mixed solution.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供使用臭氧溶解的硫酸溶液进行氧化处理以进行氧化处理的控制方法，该方法可以确定待氧化材料的存在。解决方案：在该方法中，将臭氧连续引入硫酸溶液中以溶解在硫酸溶液中，同时使硫酸溶液与臭氧反应产生过氧硫酸，并将臭氧 - 硫酸混合溶液被制造。将具有待氧化形成的材料的加工基材放入该臭氧 - 硫酸混合溶液中以氧化待氧化的材料。然后测量晶片引入的臭氧 - 硫酸混合溶液的254nm处的吸光度或混合溶液的150-220nm处的至少一个。当测量的吸光度达到规定水平时，将晶片从臭氧 - 硫酸混合溶液中拉出。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004327826A Substrate processor 审中-公开
公开(公告)号：JP2004327826A
公开(公告)日：2004-11-18
申请号：JP2003122266
申请日：2003-04-25
申请人： Dainippon Screen Mfg Co Ltd , Toshiba Corp , 大日本スクリーン製造株式会社 , 株式会社東芝
发明人： TOMITA HIROSHI , NADAHARA SOICHI , OGUCHI HISASHI , MURAOKA YUSUKE , MIYAKE TAKASHI , OJIMARU TOMONORI
IPC分类号： H01L21/306 , B08B3/04 , B08B3/10 , H01L21/00 , H01L21/027 , H01L21/304
CPC分类号： H01L21/67086 , B08B3/048 , B08B3/10
摘要： PROBLEM TO BE SOLVED: To provide a substrate processor wherein the processing time of a substrate can be shortened without using any expensive asher apparatus by contacting uniformly the bubbles of an ozone gas with the substrate.
SOLUTION: Since a bubble feeding means 33 so has bubble generating components that bubbles overlap partly with each other in the direction of the surface of a substrate W, there can be eliminated any portion in the direction of the surface of the substrate W wherewith no bubble of an ozone gas is contacted, and the bubbles of the ozone gas can be contacted uniformly with the substrate W in the direction of its surface. Therefore, the processing time of the substrate W can be shortened without using any expensive asher apparatus.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004200635A Semiconductor wafer and manufacturing method of the semiconductor wafer 有权
公开(公告)号：JP2004200635A
公开(公告)日：2004-07-15
申请号：JP2003092737
申请日：2003-03-28
申请人： Toshiba Corp , 株式会社東芝
发明人： IWASE MASAO , NADAHARA SOICHI
IPC分类号： H01L21/02 , H01L23/544 , H01L29/06
CPC分类号： H01L23/544 , H01L29/0657 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer which can keep high visibility of an ID mark and enables consistent production control of a manufacturing process of a semiconductor device, and its manufacturing method. SOLUTION: The semiconductor wafer has opposed first and second major surfaces 12a, 12b, first and second bevel parts 13a, 13b provided to an outer circumferential part of the first and second major surfaces 12a, 12b respectively, a first recess 16 formed in a part of the first bevel part 13a and a first ID mark 17 attached to the bottom of the first recess and constituted of a projecting first dot. COPYRIGHT: (C)2004,JPO&NCIPI

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