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1. 发明专利

JPH08330198A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08330198A
公开(公告)日：1996-12-13
申请号：JP13028195
申请日：1995-05-29
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： MIYASHITA MORIYA , TOYOMARU YOUKO
IPC分类号： H01L21/324 , H01L21/02 , H01L21/304
摘要： PURPOSE: To provide a technique of flattening the silicon wafer surface in the atomic level. CONSTITUTION: After a silicon wafer under the predetermined misorientation angle is dipped in an aqueous solution of fluoric acid and hydrogen peroxide or subjected to ultraviolet ray irradiation in an aqueous solution of fluoric acid, it is held in a high-temperature hydrogen atmosphere at over 1,150 deg.C for over 30 minutes. A uniform step-terrace structure is formed by this treatment on the wafer surface with an improvement of the dielectric breakdown characteristics of an oxide film formed on the surface.

2. 发明专利

JPH0817815A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHODS FOR TREATING, ANALYZING, AND MANUFACTURING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0817815A
公开(公告)日：1996-01-19
申请号：JP17164894
申请日：1994-06-30
申请人： TOSHIBA CORP
发明人： KAGEYAMA MOKUJI , MIYASHITA MORIYA
IPC分类号： H01L21/316 , H01L21/26 , H01L21/306 , H01L21/311 , H01L21/66
摘要： PURPOSE:To prevent gate oxide film formed after forming field oxide film from being thinned by forming an oxide film by oxidizing a specific region on the substrate surface, applying ultraviolet rays while allowing a solution containing fluorine to contact the substrate surface, and etching the oxide film and the substrate with nearly equal rates. CONSTITUTION:Field oxide films 14 are formed at the left and right of Si substrate 1 and a thin pad oxide film 12 for connecting them is formed. Then, the surface part of the field oxide films 14 and the pad oxide film 12 are removed. Then, the field oxide films 14 are placed in oxygen atmosphere, ultraviolet rays are applied to them, at the same time 0.05%HF is applied over the substrate 1, thus completely etching the field oxide film 14 and the pad oxide film 12 and hence etching the Si substrate 1 as an exposed ground at nearly an equal rate as that of the field oxide films 14 due to the synergistic effect of 0.05%HF and ultraviolet rays and hence preventing thinning of a gate oxide film.

3. 发明专利

JPH0234923A ULTRASONIC CLEANER 失效
公开(公告)号：JPH0234923A
公开(公告)日：1990-02-05
申请号：JP18510088
申请日：1988-07-25
申请人： TOSHIBA CORP
发明人： YOSHII SHINTARO , MIYASHITA MORIYA
IPC分类号： B08B3/12 , H01L21/304
摘要： PURPOSE:To make it possible to effectively remove contaminants in the form of extreme fine particles or films adhering to a semiconductor wafer by providing vibrators belonging to at least two kinds of oscillation frequency bands at the bottom of a cleaning vessel so as to give two kinds or more of ultrasonic vibrations to cleaning liquid. CONSTITUTION:A semiconductor wafer 6 is stored in a wafer carrier 7, which is set in a cleaning vessel 2. The bottom of the cleaning vessel 2 consists of a diaphragm 13 to give ultrasonic vibration to cleaning liquid 5 in the vessel, and to the diaphragm 13 are bonded ultrasonic vibrators belonging to at least two kinds of different oscillation frequency bands. That is, ultrasonic vibrators 14 belonging to the oscillation frequency band of 600 to 900kHz, and ultrasonic vibrators 15 belonging to the oscillation frequency band of 1.5 to 2.0MHz are arranged alternately. Accordingly, by the synergetic effect of different frequency oscillations, the nonuniformity of cleaning effect by places inside the cleaning vessel 2 is improved. Hereby, the contaminants in the form of extremely fine particles or films adhering to the surface of the semiconductor wafer 6 can be removed efficiently.

4. 发明专利

JPH0227717A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0227717A
公开(公告)日：1990-01-30
申请号：JP17672088
申请日：1988-07-15
申请人： TOSHIBA CORP
发明人： SAMATA SHUICHI , MIYASHITA MORIYA
IPC分类号： H01L21/768 , H01L21/28 , H01L21/285 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To prevent the occurrence of short-circuiting of wirings due to dust, etc., adhering to an insulating film by forming an silicon layer in a contact hole and performing ultrasonic cleaning of the surface of the insulating film that forms a wiring layer. CONSTITUTION:A gate oxide film 13, a gate electrode 14, a source 15 and a drain 16 are formed to a semiconductor substrate 11, and a silicon oxide film 17 and a BPSG(borophospho-silicon glass) film 18 are deposited on the whole surface. Contact holes 20, 21 communicated with the surfaces of the source 15 and the drain 16 are bored. The substrate 11 is heated at a fixed temperature, and silicon layers 22, 23 are buried into the contact holes 20, 21 through a selective vapor growth method under the state. The surface of the BPSG film 18 is cleaned through a ultrasonic cleaning method, and silicon and dust precipitating on the BPSG film are removed. A source wiring 24 and a drain wiring 25 connected to the surfaces of the silicon layers 22, 23 are formed.

5. 发明专利

JPH01143223A SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH01143223A
公开(公告)日：1989-06-05
申请号：JP30035687
申请日：1987-11-28
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIYASHITA MORIYA , YOSHII SHINTARO , SAKUMA KEIKO
IPC分类号： H01L21/00 , H01L21/304 , H01L21/322
摘要： PURPOSE:To form clean mechanical distortions in the rear of a substrate by propagating ultrasonic waves to the surface of a semiconductor substrate through pure water. CONSTITUTION:A treatment vessel 10 is filled with ultrapure water 11 and a water carrier 14 where a plurality of sheets of silicon substrates 13 are housed is immersed in the above vessel. And this device makes an ultrasonic wave generating part 12 operate to generate ultrasonic waves and performs its treatment by feeding the designated gas to a gas supply pipe 16. In such a case, the output of the ultrasonic waves are selected within a range 50-500W and their frequencies are selected within a range 10-100kHz. In such a case, irregular mechanical distortions are formed by the ultrasonic waves which are propagated through underwater handling of ultrapure water at the rear of each silicon substrate 13 that is housed at wafer carriers 14. On the other hand, bubbles are produced at the surface of each silicon substrate 13 by gases splayed by respective nozzles 17 and the presence of these bubbles makes the ultrasonic waves at the surface disappear. Accordingly, the mechanical distortions are not formed at respective surface sides of the substrate. Then, each silicon substrate 13 is rotated and its rotation makes the formation of mechanical distortion at the rear and bubbles' circulation around the surface uniform respectively.

6. 发明专利

JPS622543A DECOMPOSING DEVICE FOR SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPS622543A
公开(公告)日：1987-01-08
申请号：JP14023085
申请日：1985-06-28
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIYASHITA MORIYA , YAMAYOSHI RIE
IPC分类号： H01L21/66 , H01L21/302 , H01L21/306 , H01L21/3065
摘要： PURPOSE:To obtain a safe and handy decomposing device for thin film by a method wherein the seal container thereof holding the wafer container and so forth is provided with an air feed opening and a liquid feed opening or an air feed opening also serving as a liquid feed opening, and at the same time is provided with an exhaust vent and a light discharge opening; and the liquid is injected and discharged by the operation of the valves. CONSTITUTION:Semiconductor substrates W each having thin films (f) are loaded in a wafer carrier 3 in a state that the substrates W are erected, and then a carrier cover 6 is put over. By opening a valve 11, hydrofluoric acid is injected in an air feed opening also serving as a liquid feed opening 10 at the prescribed amount and the hydrofluoric acid L is injected in liquid reservoirs 7c in a seal container 7 up to the prescribed liquid level. After that, a cover 7a is closed, and at the same time the valve 11 is also closed to seal the container 7, which is left to stand for the prescribed time; and after an elapse of the prescribed time, a liquid discharge opening 8 is connected to the waste liquor tank and so forth, and after that a valve 9 is opened to discharge the hydrofluoric acid L of the liquid reservoirs 7c. An exhaust vent 12 is connected to the exhaust duct, and a valve 13 is opened to exhaust the hydrogen fluoric gas of the container 7. The valve 11 is opened to feed the air into the container 7 through the opening 10, with the result that the gas inside is substituted for the air. After that, pure water is injected in the container 7 through the opening 10.

7. 发明专利

JPS61155840A MEASURING INSTRUMENT FOR PULVEROUS PARTICLE IN LIQUID 失效
公开(公告)号：JPS61155840A
公开(公告)日：1986-07-15
申请号：JP27620384
申请日：1984-12-28
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA , HIRATSUKA HACHIRO
IPC分类号： G01N21/59 , G01B11/08 , G01N15/06 , G01N15/14
摘要： PURPOSE:To measure the pulverous particles in a sample in which foam is liable to be generated by drying the sample put into sample bases, irradiating laser light on the dried sample bases so as to transmit through the bases and detecting the sample. CONSTITUTION:Partition plates 22a, 22b are provided to a housing 21. A sample stage 27 is provided on the plate 22a and the sample bases 28 made of sapphire are fitted therein and are rotated. The sample is put into the bases 28 and is heated by an IR lamp 25. The sample is dried by suction with a suction pump 24. The laser light 35 is irradiated from a laser light source 30 under the plate 22a so as to transmit the sample bases 28 and is detected by a detector 33 on the plate 22b. The quantity of light is then detected. The bases 38 are rotated and the laser light 35 is irradiated successively on the sample. The sample is irradiated with the laser light after the sample is heated and dried and therefore the measurement of the quantity and size of the pulverous particles in the liquid sample in which the foam is liable to be generated is thus made possible with high reliability.

8. 发明专利

JPH11288942A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11288942A
公开(公告)日：1999-10-19
申请号：JP8894298
申请日：1998-04-01
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA , SAMATA SHUICHI
IPC分类号： H01L21/322 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which crystal defects or metal impurities in the surface and the surface layer of a semiconductor are decreased. SOLUTION: A p-type silicon single crystal wafer is grown through, Czochralski method. It has a low resistivity of less than 0.1 Ω/cm by doping it heavily with boron. The p-type silicon single crystal wafer is subjected to a heat treatment at a temperature of more than 1,000 degrees centigrade in an argon a atmosphere. By this step, the COP density in the p-type silicon single-crystal wafer is lowered. The BMD densities of the surface and the surface layer thereof are lowered. The BMD density of the inside thereof is mode high.

9. 发明专利

JPH1022377A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1022377A
公开(公告)日：1998-01-23
申请号：JP17352496
申请日：1996-07-03
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA , NUMANO MASAKUNI
IPC分类号： H01L21/762 , H01L21/02 , H01L21/265 , H01L21/304 , H01L21/322 , H01L21/76 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To improve the insulation and crystal characteristics of a thin film SOI(silicon on insulator) layer by a partly removed buried oxide film and surface oxide film. SOLUTION: A silicon oxide film 2 is formed on one side of an Si single crystal substrate 1. Oxygen ions are implanted into the substrate through regions not covered with the film 2 to form a surface oxide film 3. Si single crystal portions 4 are formed epitaxially on regions where the Si single crystal is exposed. An Si single crystal substrate 5 separate from that substrate 1 is adhered and one side is polished to expose the ion-implanted surface oxide film 3 on the surface. This exposed film 3 serves for a reference for forming a pattern by the photolithography and is adapted to scribe line regions between chips which are used for isolating elements or have no elements formed.

10. 发明专利

JPH06333909A TREATMENT OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06333909A
公开(公告)日：1994-12-02
申请号：JP11686293
申请日：1993-05-19
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA , HIRATSUKA HACHIRO
IPC分类号： H01L21/306 , H01L21/324
摘要： PURPOSE:To obtain a semiconductor device which is high in quality and yield with respect to the withstand voltage, etc., of an oxide film by annealing a semiconductor substrate at a specific temperature in a reducing or inert gas and melting the surface of the semiconductor substrate by a prescribed amount. CONSTITUTION:A process for annealing semiconductor substrates at 1,100 deg.C temperature in a reducing or inert gas and another process for melting the surface of the substrate by a prescribed amount are provided. For example, an Si substrate having a specular surface on one side is annealed for one hour at 1,200 deg.C in a hydrogen atmosphere in a resistance heating furnace. After annealing, the Si substrate is taken out from the heating furnace, cooled to the room temperature, and mounted on a Teflon carrier for preventing the adhesion of dust. Then the surface of the Si substrate is melted by about 600Angstrom by dipping the substrate in a liquid mixture of aqueous ammonia containing 30% ammonia, aqueous hydrogen peroxide containing 30% hydrogen peroxide, and water (at a mixing ratio of 1:1:10 in volume) for about one hour while the liquid mixture is maintained at 80 deg.C. Thereafter, the Si substrate is washed with water and dried.

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