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    • 8. 发明专利
    • METHOD AND SYSTEM FOR INSPECTING SUBSTRATE
    • JP2000208395A
    • 2000-07-28
    • JP561099
    • 1999-01-12
    • TOSHIBA CORP
    • NAGAI TAKAMITSUNAGAHAMA ICHIROTAYAMAZAKI YUICHIROMIYOSHI MOTOSUKE
    • H01J37/22G01N23/225G03F1/84G03F1/86H01J37/04H01L21/027H01L21/66G03F1/08
    • PROBLEM TO BE SOLVED: To provide a system and a method for inspecting a substrate in which a projecting electron beam can be regulated in three directions of X, Y and θ. SOLUTION: A substrate inspection system comprises a cathode stage 1 for moving a cathode 2 in three directions of X, Y and θ and a control section 3 therefor, an electromagnetic coil 7 for turning an electron beam 8 about the beam axis and a control section 18 therefor, a Farady cup 13 and an ammeter 35 for measuring the current value of the electron beam 8, and a correction amount operating circuit 15. Current value of the electron beam 8 is measured for each coordinate by irradiating the Farady cup 13 with the electron beam 8 in a specified region by shifting a sample stage 14. Two-dimensional distribution of the current values exceeding a specified threshold level Is is then calculated and axial shift (X, Y) of the electron beam 8 is calculated based on the center of gravity of the two-dimensional distribution. Subsequently, an axial shift correction amount is fed to the cathode stage control section 3, rotational shift (θ) is calculated based on the inclination of the regression line of the two-dimensional distribution and a rotational shift correction amount is fed to the cathode stage control section 3 and the electromagnetic coil control section 18.
    • 9. 发明专利
    • Pattern inspection method, photomask, and method of manufacturing semiconductor device
    • 图案检查方法,光电二极管及制造半导体器件的方法
    • JP2012253168A
    • 2012-12-20
    • JP2011123991
    • 2011-06-02
    • Toshiba Corp株式会社東芝
    • MITSUYOSHI YASURONAGAI TAKAMITSU
    • H01L21/66G03F1/84
    • PROBLEM TO BE SOLVED: To provide a pattern inspection method capable of bringing defects detected by an optical inspection into an observation field in an electron microscope with high accuracy, and to provide a photomask and a method of manufacturing a semiconductor device.SOLUTION: In a pattern inspection method, a plurality of regions are formed in a wafer, each region including a device pattern formed in a chip region, a first pattern formed outside of the chip region, and a second pattern different from the first pattern formed outside of the chip region. By an optical inspection of the wafer, defects in the device pattern are detected by correlating with position coordinates on the wafer, and the second pattern correlated with position coordinates on the wafer is detected by comparing with the first pattern. Based on observation results of positioning in which an observation field in an electron microscope being aligned with the position coordinates of the detected second pattern, the position coordinates of the defects in the device pattern are corrected.
    • 要解决的问题:提供一种能够以高精度将能​​够通过光学检查检测到的缺陷引入电子显微镜中的观察场的图案检查方法,并提供光掩模和半导体器件的制造方法。 解决方案:在图案检查方法中,在晶片中形成多个区域,每个区域包括形成在芯片区域中的器件图案,形成在芯片区域外部的第一图案和不同于芯片区域的第二图案 第一图案形成在芯片区域外部。 通过对晶片的光学检查,通过与晶片上的位置坐标相关来检测器件图案中的缺陷,并且通过与第一图案进行比较来检测与晶片上的位置坐标相关的第二图案。 基于电子显微镜中的观察场与所检测的第二图案的位置坐标对准的定位的观察结果,校正装置图案中的缺陷的位置坐标。 版权所有(C)2013,JPO&INPIT
    • 10. 发明专利
    • Method and device for preparing inspection recipe
    • 用于准备检查录像的方法和装置
    • JP2007311418A
    • 2007-11-29
    • JP2006136789
    • 2006-05-16
    • Toshiba Corp株式会社東芝
    • NAGAI TAKAMITSUONISHI ATSUSHIMORINAGA HIROYUKIITO TAKEMAINOUE ARATA
    • H01L21/66
    • PROBLEM TO BE SOLVED: To provide a method for preparing an inspection recipe for a semiconductor wafer in high accuracy and at high throughput.
      SOLUTION: At least either of a wafer parameter as a settable inspection information and a sensitivity parameter of a defect inspection device is generated from the design information of a semiconductor wafer, and incorporated into a recipe for defect inspection. The defect inspection device is unnecessary to be occupied for the preparation of the recipe because a semiconductor wafer to be inspected is not actually used, and the defect inspection can be carried out without lowering the throughput of the device.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种以高精度和高产量制备半导体晶片的检查配方的方法。 解决方案:从半导体晶片的设计信息生成作为可设定的检查信息的晶片参数和缺陷检查装置的灵敏度参数中的至少任一个,并且并入到缺陷检查的配方中。 由于未实际使用被检查的半导体晶片,所以不需要占用该缺陷检查装置,因此能够在不降低装置的生产能力的情况下进行缺陷检查。 版权所有(C)2008,JPO&INPIT