发明专利
JP2004138563A Method and device for determining defect information detection sensitivity data, method for managing defect detection device, and method and device for detecting defect in semiconductor device
有权
基本信息:
- 专利标题: Method and device for determining defect information detection sensitivity data, method for managing defect detection device, and method and device for detecting defect in semiconductor device
- 申请号:JP2002305157 申请日:2002-10-18
- 公开(公告)号:JP2004138563A 公开(公告)日:2004-05-13
- 发明人: HAMAGUCHI AKIRA , NAGAI TAKAMITSU
- 申请人: Toshiba Corp , 株式会社東芝
- 专利权人: Toshiba Corp,株式会社東芝
- 当前专利权人: Toshiba Corp,株式会社東芝
- 优先权: JP2002305157 2002-10-18
- 主分类号: G01B11/30
- IPC分类号: G01B11/30 ; G01N21/956 ; G06T1/00 ; G06T7/00 ; G06T7/40 ; H01L21/66
摘要:
PROBLEM TO BE SOLVED: To quantitatively determine defect detection sensitivity data for use in detecting a defect in a semiconductor device, using image data detected from the surface of each semiconductor device of the plurality of semiconductor devices. SOLUTION: The image data are taken in from a desired area of the surface of each semiconductor device of the plurality of semiconductor devices. Defect information on the desired area is obtained by comparing the data obtained by arithmetically processing the image data with a defect information detection sensitivity parameter in which a prescribed threshold value is set. By varying the threshold value which is set to the defect information detection sensitivity parameter, the step for obtaining the defect information is performed plural times, and a plurality of combination data are obtained, in which the threshold value is related to the defect information. A function showing the relationship between desired statistical quantity data and the defect information detection sensitivity parameter is prepared, using the plurality of combination data. On the basis of the function, the defect information detection sensitivity data for use in obtaining the defect information on the desired area in detecting the defect of the semiconductor device are determined. COPYRIGHT: (C)2004,JPO
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
G | 物理 |
--G01 | 测量;测试 |
----G01B | 长度、厚度或类似线性尺寸的计量;角度的计量;面积的计量;不规则的表面或轮廓的计量 |
------G01B11/00 | 以采用光学方法为特征的计量设备 |
--------G01B11/30 | .用于计量表面的粗糙度和不规则性 |