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1. 发明专利

JP2005235777A Inspection apparatus and method by electron beam, and device manufacturing method using the inspection apparatus 审中-公开
标题翻译：电子束的检查装置和方法以及使用检查装置的装置制造方法
公开(公告)号：JP2005235777A
公开(公告)日：2005-09-02
申请号：JP2005061093
申请日：2005-03-04
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01L21/66 , H01J37/29
摘要： PROBLEM TO BE SOLVED: To improve an inspection speed detecting a failure of a sample of a wafer, etc. SOLUTION: An inspection apparatus by an electron beam is one of a mapping projection type and comprises: a primary electron optical system for forming the electron beam emitted from en electron gun into a rectangle and irradiating onto a face of a sample to be inspected; a secondary electron optical system for converging secondary electrons emitted from the sample; a detection device for converting the converged secondary electrons into an optical image through a fluorescent plate to image them to a line sensor; and a control device for controlling charge moving time to transfer the line image which is imaged in a pixel string provided with the line sensor, cooperatively with the moving speed of a stage to move the sample. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高检测晶片样品故障等的检查速度。解决方案：电子束检查装置是映射投影型之一，包括：一次电子用于将从电子枪发射的电子束形成矩形并照射到要检查的样品的面上的光学系统; 用于会聚从样品发射的二次电子的二次电子光学系统; 检测装置，用于通过荧光板将会聚的二次电子转换为光学图像，以将其成像到线传感器; 以及控制装置，用于控制电荷移动时间，以便与用于移动样本的载物台的移动速度协调地传送被成像在设置有线传感器的像素串中的线图像。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2007200658A Sample surface inspection device and inspection method 有权
标题翻译：样品表面检查装置和检验方法
公开(公告)号：JP2007200658A
公开(公告)日：2007-08-09
申请号：JP2006016553
申请日：2006-01-25
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： NOMICHI SHINJI , NAITO YOSHIHIKO , SOFUGAWA TAKUJI , HATAKEYAMA MASAKI , TERAO KENJI , MURAKAMI TAKESHI , OKUMURA KATSUYA , TOUKI TATSUHIKO
IPC分类号： H01J37/29 , H01L21/027 , H01L21/66
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device having unprecedented high accuracy, in a defect inspection device of a manufacturing process of a semiconductor device; and to provide a defect inspection (or evaluation) method. SOLUTION: In this method for inspecting a sample surface by a mapping type electron beam inspection device, the size of an irradiation region on the sample surface by an electron beam generated from an electron gun 21 is set larger than a pattern size on the sample surface and formed into a generally circular or elliptical shape; the pattern on the sample surface is irradiated nearly at its center with the electron beam; and secondary electrons generated from the sample surface by the irradiation of the electron beam are focused on an electron detection surface of a detector to inspect the sample surface. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在半导体器件的制造工艺的缺陷检查装置中，提供具有前所未有的高精度的缺陷检查装置; 并提供缺陷检查（或评估）方法。解决方案：在通过映射型电子束检查装置检查样品表面的方法中，通过由电子枪21产生的电子束将样品表面上的照射区域的尺寸设定为大于图案尺寸样品表面并形成大致圆形或椭圆形; 样品表面的图案用电子束几乎照射在其中心; 并且通过电子束的照射从样品表面产生的二次电子被聚焦在检测器的电子检测表面上以检查样品表面。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007035645A Imaging device, defect inspection device, defect inspection method and electron beam inspection device 有权
标题翻译：成像装置，缺陷检查装置，缺陷检查方法和电子束检查装置
公开(公告)号：JP2007035645A
公开(公告)日：2007-02-08
申请号：JP2006231971
申请日：2006-08-29
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU , HATAKEYAMA MASAKI , KANEUMA TOSHIFUMI , SOFUGAWA TAKUJI , YOSHIKAWA SEIJI , MURAKAMI TAKESHI , WATANABE KENJI , KARIMATA TSUTOMU , OWADA SHIN , NISHIFUJI MUTSUMI , YAMAZAKI YUICHIRO , NAGAI TAKAMITSU , NAGAHAMA ICHIROTA
IPC分类号： H01J37/20 , G01B15/04 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve contrast of a picked-up image by uniformalizing a potential distribution on a surface of an inspection object. SOLUTION: The imaging device irradiates an electron beam emitted from an electron gun on an object, detects electrons emitted from the object by using a detector, and carries out collection of image information of the object and inspection of a defect or the like of the object. The device has a means to uniformalize or reduce electric charge taken on the object. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过使检查对象的表面上的电位分布均匀化来提高拾取图像的对比度。解决方案：成像装置将从电子枪发射的电子束照射在物体上，通过使用检测器检测从物体发射的电子，并执行物体的图像信息的收集和缺陷的检查等的对象。该装置具有使物体上的电荷均匀化或减少的手段。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2011142090A Inspection device by electron beam, inspection method, and device manufacturing method using its inspection device 有权
标题翻译：电子束检查装置，检查方法和使用其检查装置的装置制造方法
公开(公告)号：JP2011142090A
公开(公告)日：2011-07-21
申请号：JP2011007078
申请日：2011-01-17
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01J37/29 , H01J37/09 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/66
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To improve inspection speed for detecting a defect of a sample such as wafers.
SOLUTION: In an electron beam test device equipped with a first electronic optical system which irradiates the electron beam to the sample to be inspected, a second optical system which makes the second beam irradiated from the wafers to a detector and a control equipment to control the detector, the electron beam test device includes a first column, a second column, and a chamber. The first column is arranged with an electron gun and the first electronic optical system. In the chamber, a stage is installed, and the sample is put thereon. At the second column, on a light axis, a cathode lens, a numerical aperture, a Wien filter, a second lens, a field aperture, a third lens, a fourth lens, and the detector are arranged. An opening part is arranged to be a focus position of the electron beam and a focal position of the cathode lens. The cathode lens and the numerical aperture constitute a telecentric electronic optical system.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提高用于检测诸如晶片的样品的缺陷的检查速度。解决方案：在配备有将电子束照射到待检查样品的第一电子光学系统的电子束测试装置中，使得将第二光束从晶片照射到检测器的第二光学系统和控制设备为了控制检测器，电子束测试装置包括第一列，第二列和室。第一列配置有电子枪和第一电子光学系统。在室中，安装一个台，将样品放在其上。在第二列处，在光轴上布置有阴极透镜，数值孔径，维恩滤波器，第二透镜，场光圈，第三透镜，第四透镜和检测器。开口部被配置为电子束的焦点位置和阴极透镜的焦点位置。阴极透镜和数值孔径构成远心电子光学系统。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2007019033A Inspection device and method by electron beam, and device manufacturing method using above inspection device 审中-公开
标题翻译：电子束检查装置和方法以及使用上述检查装置的装置制造方法
公开(公告)号：JP2007019033A
公开(公告)日：2007-01-25
申请号：JP2006245944
申请日：2006-09-11
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To process an inspection, exposure or the like of a wafer without polluting a sample, a lens or the like. SOLUTION: A differential pumping part 5004 is attached to surround a tip part of a mirror cylinder 5001. A sample 5002 is mounted on a stage 5003. Gas flowing towards a charged particle beam 5050 from an outer peripheral side of the differential pumping part 5004 is evacuated through annular grooves 5005, 5006, a charged particle beam region is sustained in a predetermined vacuum degree. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：处理晶片的检查，曝光等而不污染样品，透镜等。
解决方案：差分泵送部分5004被附接以围绕反射镜缸501的尖端部分。样品5002安装在台5003上。从差动泵送的外周侧朝向带电粒子束5050流动的气体部分5004通过环形槽5005,5006抽真空，带电粒子束区域被保持在预定的真空度。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006080541A Detection apparatus and device manufacturing method 审中-公开
标题翻译：检测装置和装置制造方法
公开(公告)号：JP2006080541A
公开(公告)日：2006-03-23
申请号：JP2005277662
申请日：2005-09-26
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： HATAKEYAMA MASAKI , MURAKAMI TAKESHI , SATAKE TORU , NOMICHI SHINJI , NAGAHAMA ICHIROTA , YAMAZAKI YUICHIRO
IPC分类号： H01L21/66 , G01B15/00 , G01N21/95 , G03F1/00 , G21K7/00 , H01J37/16 , H01J37/244 , H01J37/28 , H01J37/29
CPC分类号： H01J37/244 , G01N21/9501 , G03F1/84 , H01J37/285 , H01J2237/2441 , H01J2237/2446
摘要： PROBLEM TO BE SOLVED: To provide an apparatus that captures precisely a fine geometry on a surface of a sample by detecting electrons caused by irradiating the sample with a beam in an environment different from an atmosphere. SOLUTION: A sensor 32 is an EB-TDI sensor and capable of making electrons directly enter the entire surface of the sensor in a vacuum. The sensor 32 is arranged in a package and the package constitutes a feed through 22. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过检测在与大气不同的环境中用光束照射样品而引起的电子而精确捕获样品表面上的几何形状的装置。解决方案：传感器32是EB-TDI传感器，能够在真空中使电子直接进入传感器的整个表面。传感器32布置在包装中，并且包装构成通过22的进料。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005209645A Electron beam device equipped with function of detailed observation and inspection as well as observation method of sample by the device 有权
标题翻译：具有详细观察和检查功能的电子束装置作为装置的样品观察方法
公开(公告)号：JP2005209645A
公开(公告)日：2005-08-04
申请号：JP2004376827
申请日：2004-12-27
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： WATANABE KENJI , SATAKE TORU , NOMICHI SHINJI , MURAKAMI TAKESHI , KARIMATA TSUTOMU , YAMAZAKI YUICHIRO , NAGAHAMA ICHIROTA , ONISHI ATSUSHI
IPC分类号： H01L21/66 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide a sample observation method capable of a detailed observation of a sample with the use of an identical electron beam device. SOLUTION: The electron beam device 1 is used equipped with a primary optical system 10 irradiating electron beams on the surface of the sample, and a secondary optical system 30 forming images of the sample surface by detecting secondary electron beams emitted from the sample surface. The surface of the sample is inspected by irradiating the electron beams on the surface S of the sample, and after extracting defective sites of the sample according to the inspection, the electron beams are irradiated again on the extracted defective sites to carry out enlargement or detailed observation of the same. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够使用相同的电子束装置详细观察样品的样品观察方法。解决方案：电子束装置1配备有在样品表面上照射电子束的主要光学系统10和通过检测从样品发射的二次电子束形成样品表面的图像的二次光学系统30 表面。通过在样品的表面S上照射电子束来检查样品的表面，并且在根据检查提取样品的缺陷部位之后，再次将电子束照射在提取的缺陷部位上以进行放大或详细观察一样。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2014209460A 電子線検査装置有权
标题翻译：电子束检查装置
公开(公告)号：JP2014209460A
公开(公告)日：2014-11-06
申请号：JP2014052311
申请日：2014-03-14
申请人：株式会社荏原製作所 , Ebara Corp
发明人： HATAKEYAMA MASAKI , MURAKAMI TAKESHI , KARIMATA TSUTOMU
IPC分类号： H01J37/29 , H01J37/09 , H01J37/12 , H01J37/141 , H01J37/147 , H01J37/16 , H01J37/18 , H01J37/244
CPC分类号： H01J37/09 , H01J37/12 , H01J37/14 , H01J37/16 , H01J37/18 , H01J37/24 , H01J37/29
摘要：【課題】超微細パターンなどの試料面の微細な観察像を高精度且つ高分解能で取得して、試料の欠陥検査を高速で行うことができる電子線検査装置を提供する。【解決手段】電子線検査装置の二次電子光学系が組み込まれる鏡筒内部に、内層と外層に導電体、中間層に絶縁体が積層されてなる筒体を設置し、この筒体の内部に電子軌道路を形成するとともに、筒体の外側に二次電子光学系を構成する各磁場レンズと磁場アライナを配置し、電子軌道路内に従来装置の2倍〜30倍の高電圧を印加することで高エネルギーの電子ビーム像を形成可能とする。【選択図】図3
摘要翻译：要解决的问题：提供一种电子束检查装置，其通过以高精度和高分辨率获取样品表面的精细观察图像，例如超精细图案，允许对样品进行高速缺陷检查。解决方案：在设置有电子束检查装置的二次电子光学系统的镜筒，安装在内层和外层中层压导体的圆筒和中间层中的绝缘体，在圆筒中形成电子轨道，构成二次电子光学系统的每个磁场透镜和每个磁场对准器被布置在圆柱体的外侧，并且可以通过施加高达常规的2-30倍的高电压而形成高能量的电子束图像电子轨道中的装置。

9. 发明专利

JP2010123929A Extreme ultraviolet light source apparatus 审中-公开
标题翻译：极光超光源光源装置
公开(公告)号：JP2010123929A
公开(公告)日：2010-06-03
申请号：JP2009242869
申请日：2009-10-21
申请人： Ebara Corp , Gigaphoton Inc , Topcon Corp , ギガフォトン株式会社 , 株式会社トプコン , 株式会社荏原製作所
发明人： NAGAI SHINJI , ISHIHARA TAKANOBU , KAKIZAKI KOJI , SOFUGAWA TAKUJI , MURAKAMI TAKESHI , INOUE MASAHIRO
IPC分类号： H01L21/027
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70858 , G03F7/70916 , G03F7/70983 , H05G2/005
摘要： PROBLEM TO BE SOLVED: To provide an extreme ultraviolet light source apparatus that can collect debris influencing an optical element etc., in a chamber with simple constitution and obtain an EUV optical output having desired intensity.
SOLUTION: The extreme ultraviolet light source apparatus comprises: target supply units (a molten Sn tank 5 and a nozzle 6) supplying droplets 7 as a target into a vacuum chamber 1; an EUV light collector mirror Lb outputting an extreme ultraviolet light outside by reflecting the extreme ultraviolet light Lb emitted from the droplets 7 being ionized as a plasma by irradiation with CO2 laser light La at a plasma luminescence point P1 in the vacuum chamber 1; and an ion debris removal unit 10 at least a portion of which is located in an obscuration region E including the plasma luminescence point P1.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在具有简单结构的室中收集影响光学元件等的碎片的极紫外光源装置，并获得具有期望强度的EUV光输出。解决方案：极紫外光源装置包括：向真空室1供给作为目标的液滴7的目标供给单元（熔融Sn罐5和喷嘴6）通过在真空室1中的等离子体发光点P1处通过用CO 2激光La照射，通过反射从液滴7发射的远紫外光Lb作为等离子体离子化而输出极紫外光的EUV聚光镜Lb; 以及离子碎片去除单元10，其至少一部分位于包括等离子体发光点P1的遮蔽区域E中。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2006317466A Defect inspection method 有权
标题翻译：缺陷检查方法
公开(公告)号：JP2006317466A
公开(公告)日：2006-11-24
申请号：JP2006219104
申请日：2006-08-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HAMASHIMA MUNEKI , HATAKEYAMA MASAKI , NOMICHI SHINJI , SATAKE TORU , NAKASUJI MAMORU , MURAKAMI TAKESHI , WATANABE KENJI
IPC分类号： G01N23/225 , G01N1/28
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection method that can appropriately control a charge amount of a surface of a sample even when the irradiation current value for enlarging the throughput or the like is increased, obtains clear image data with small distortion, and can perform an inspection with high reliability.
SOLUTION: The defect inspection method employs an inspection device having a beam source 1 for irradiating a sample 10 with a charged particle beam 2 and a detector 18 for detecting a charged particle from the sample surface. The surface of the sample 10 is coated with a resistance film 42 having a predetermined electric resistance value, the charged particle beam 2 is radiated to the sample 10, and a secondary charged particle or the like generated from the sample surface is detected by the detector 18.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使当用于扩大吞吐量等的照射电流值增加时也可以适当地控制样品表面的电荷量的缺陷检查方法，获得具有小失真的清晰图像数据，可以高可靠性进行检查。解决方案：缺陷检查方法采用具有用于向样品10照射带电粒子束2的光束源1和用于检测来自样品表面的带电粒子的检测器18的检查装置。样品10的表面涂覆有具有预定电阻值的电阻膜42，将带电粒子束2照射到样品10，并且由检测器检测从样品表面产生的二次带电粒子等 18.版权所有（C）2007，JPO＆INPIT

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