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1. 发明专利

JP2006054192A Electron beam device and device manufacturing method using the same 审中-公开
标题翻译：电子束装置及其装置的制造方法
公开(公告)号：JP2006054192A
公开(公告)日：2006-02-23
申请号：JP2005258657
申请日：2005-09-07
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： SUGIHARA KAZUYOSHI , YAMAZAKI YUICHIRO , NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU
IPC分类号： H01J37/28 , G03F7/20 , H01J37/12 , H01J37/18 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device in which differential exhaust is possible even by an electrostatic lens in which vacuum condition is severer than a magnetic lens, differential exhaust is possible under a system which easily starts discharge such as a decelerating field objective lens, combination of an electron gun using LaB6 cathode and differential exhaust is possible, and the electron gun is operated under the space charge limiting condition with a low shot noise, and a device manufacturing method for manufacturing a semiconductor device using the electron beam device.
SOLUTION: The electron beam device comprises an electron optical system having an electron gun 2 and an objective lens 7 consisting of an electrostatic lens that irradiates primary electron beams emitted from the electron gun on an inspection object, and an exhaust head 12 of a differential exhaust system arranged outside of the objective lens. The spacing between the electrode of the objective lens 7 located at the nearest the inspection object W and the inspection object is same as or smaller than the distance d1-d3 between the member of the exhaust head limiting exhaust conductance of the differential exhaust system and the inspection object W.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种电子束装置，其中甚至可以通过其中真空条件比磁性透镜更严格的静电透镜来实现差分排气，在容易开始放电的系统（例如，减速场物镜，可以使用LaB6阴极和差分排气的电子枪的组合，并且电子枪在具有低散射噪声的空间电荷限制条件下运行，以及使用该电子制造半导体器件的器件制造方法梁装置。解决方案：电子束装置包括具有电子枪2的电子光学系统和由在检查对象上照射从电子枪发射的一次电子束的静电透镜构成的物镜7和排出头12 布置在物镜外部的差动排气系统。位于最接近检查对象W的物镜7的电极与检查对象之间的间隔与差动排气系统的排气头的排气头的构件之间的距离d1-d3小于或等于检验对象W.版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005235777A Inspection apparatus and method by electron beam, and device manufacturing method using the inspection apparatus 审中-公开
标题翻译：电子束的检查装置和方法以及使用检查装置的装置制造方法
公开(公告)号：JP2005235777A
公开(公告)日：2005-09-02
申请号：JP2005061093
申请日：2005-03-04
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01L21/66 , H01J37/29
摘要： PROBLEM TO BE SOLVED: To improve an inspection speed detecting a failure of a sample of a wafer, etc. SOLUTION: An inspection apparatus by an electron beam is one of a mapping projection type and comprises: a primary electron optical system for forming the electron beam emitted from en electron gun into a rectangle and irradiating onto a face of a sample to be inspected; a secondary electron optical system for converging secondary electrons emitted from the sample; a detection device for converting the converged secondary electrons into an optical image through a fluorescent plate to image them to a line sensor; and a control device for controlling charge moving time to transfer the line image which is imaged in a pixel string provided with the line sensor, cooperatively with the moving speed of a stage to move the sample. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高检测晶片样品故障等的检查速度。解决方案：电子束检查装置是映射投影型之一，包括：一次电子用于将从电子枪发射的电子束形成矩形并照射到要检查的样品的面上的光学系统; 用于会聚从样品发射的二次电子的二次电子光学系统; 检测装置，用于通过荧光板将会聚的二次电子转换为光学图像，以将其成像到线传感器; 以及控制装置，用于控制电荷移动时间，以便与用于移动样本的载物台的移动速度协调地传送被成像在设置有线传感器的像素串中的线图像。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2003077414A Electron beam equipment and device manufacturing method using same 有权
标题翻译：电子束设备和使用相同的设备制造方法
公开(公告)号：JP2003077414A
公开(公告)日：2003-03-14
申请号：JP2001269857
申请日：2001-09-06
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： SUGIHARA KAZUYOSHI , YAMAZAKI YUICHIRO , NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU
IPC分类号： G21K5/00 , G03F7/20 , G21K5/04 , H01J37/12 , H01J37/18 , H01J37/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam equipment enabling differential evacuation even with an electrostatic lens which requires strict vacuum conditions.
SOLUTION: The electron beam equipment 1 is provided with an electronic optical system with an electron gun 2 and an objective lens 7 composed of an electrostatic lens which irradiates primary electrons emitted from the electron gun to a test sample and with a differential exhaust system 12 arranged outside of the objective lens. The distance between an electrode of the objective lens 7 nearest to the test sample W and the test sample is arranged the same as or smaller than that d1 to d3 between the member 12 restricting the exhaust conductance of the differential evacuation system and the test sample W.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供即使使用需要严格的真空条件的静电透镜也能够进行差分抽空的电子束设备。解决方案：电子束设备1设置有电子枪2和由静电透镜构成的物镜7，该静电透镜将从电子枪发射的一次电子照射到测试样品，并配置有差动排气系统12，在物镜外面。最接近测试样品W的物镜7的电极和测试样品之间的距离被布置成在限制差分排空系统的排气电导的构件12与测试样品W之间的d1至d3相同或更小。

4. 发明专利

JP2011142090A Inspection device by electron beam, inspection method, and device manufacturing method using its inspection device 有权
标题翻译：电子束检查装置，检查方法和使用其检查装置的装置制造方法
公开(公告)号：JP2011142090A
公开(公告)日：2011-07-21
申请号：JP2011007078
申请日：2011-01-17
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01J37/29 , H01J37/09 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/66
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To improve inspection speed for detecting a defect of a sample such as wafers.
SOLUTION: In an electron beam test device equipped with a first electronic optical system which irradiates the electron beam to the sample to be inspected, a second optical system which makes the second beam irradiated from the wafers to a detector and a control equipment to control the detector, the electron beam test device includes a first column, a second column, and a chamber. The first column is arranged with an electron gun and the first electronic optical system. In the chamber, a stage is installed, and the sample is put thereon. At the second column, on a light axis, a cathode lens, a numerical aperture, a Wien filter, a second lens, a field aperture, a third lens, a fourth lens, and the detector are arranged. An opening part is arranged to be a focus position of the electron beam and a focal position of the cathode lens. The cathode lens and the numerical aperture constitute a telecentric electronic optical system.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提高用于检测诸如晶片的样品的缺陷的检查速度。解决方案：在配备有将电子束照射到待检查样品的第一电子光学系统的电子束测试装置中，使得将第二光束从晶片照射到检测器的第二光学系统和控制设备为了控制检测器，电子束测试装置包括第一列，第二列和室。第一列配置有电子枪和第一电子光学系统。在室中，安装一个台，将样品放在其上。在第二列处，在光轴上布置有阴极透镜，数值孔径，维恩滤波器，第二透镜，场光圈，第三透镜，第四透镜和检测器。开口部被配置为电子束的焦点位置和阴极透镜的焦点位置。阴极透镜和数值孔径构成远心电子光学系统。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2007019033A Inspection device and method by electron beam, and device manufacturing method using above inspection device 审中-公开
标题翻译：电子束检查装置和方法以及使用上述检查装置的装置制造方法
公开(公告)号：JP2007019033A
公开(公告)日：2007-01-25
申请号：JP2006245944
申请日：2006-09-11
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To process an inspection, exposure or the like of a wafer without polluting a sample, a lens or the like. SOLUTION: A differential pumping part 5004 is attached to surround a tip part of a mirror cylinder 5001. A sample 5002 is mounted on a stage 5003. Gas flowing towards a charged particle beam 5050 from an outer peripheral side of the differential pumping part 5004 is evacuated through annular grooves 5005, 5006, a charged particle beam region is sustained in a predetermined vacuum degree. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：处理晶片的检查，曝光等而不污染样品，透镜等。
解决方案：差分泵送部分5004被附接以围绕反射镜缸501的尖端部分。样品5002安装在台5003上。从差动泵送的外周侧朝向带电粒子束5050流动的气体部分5004通过环形槽5005,5006抽真空，带电粒子束区域被保持在预定的真空度。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006253700A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2006253700A
公开(公告)日：2006-09-21
申请号：JP2006090523
申请日：2006-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： ANDO KOJI , SUGIHARA KAZUYOSHI , NAKASUGI TETSUO , OKUMURA KATSUYA
IPC分类号： H01L21/027 , G01B15/04 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To form a minute pattern at high throughput by putting both of excellent image dissection transgressing light of an electron beam exposure unit and high throughput of a light stepper into practical use, and to improve superimposition accuracy of a pattern.
SOLUTION: A resist pattern is formed by exposing a desired pattern on a resist formed on wafer 5. A pattern of a ground substrate with a sensitive material applied thereto is detected based on information on a second electron discharged from the sensitive material by irradiating electron beam on the sensitive material, and exposure is carried out by positioning at the detected pattern.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过将电子束曝光单元的优异的图像解离偏光和光步进器的高通量都实现，实现高成像度的微小图案，提高图案的叠加精度。解决方案：通过在晶片5上形成的抗蚀剂上曝光期望的图案形成抗蚀剂图案。基于从敏感材料排出的第二电子的信息，检测具有施加到其上的敏感材料的接地衬底的图案，在敏感材料上照射电子束，并通过定位在检测到的图案进行曝光。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2009065193A Electron beam plotting method and device therefor 有权
标题翻译：电子束贴图方法及其设备
公开(公告)号：JP2009065193A
公开(公告)日：2009-03-26
申请号：JP2008288255
申请日：2008-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： HASHIMOTO SUSUMU , ANDO KOJI , SUGIHARA KAZUYOSHI , MIYOSHI MOTOSUKE , YAMAZAKI YUICHIRO , KINOSHITA HIDETOSHI , WAKAYAMA SHIGERU , HAYASHI MASAKAZU
IPC分类号： H01L21/027 , G03F7/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To miniaturize and simplify a system, while keeping plotting accuracy. SOLUTION: In an electron beam plotting device for causing an electron beam 2 to scan a surface of a sample 13 to perform plotting, an electro-optical system comprises electrostatic lenses and deflecting devices, such as electrostatic lighting lens 20, first electrostatic forming deflecting device 21, second electrostatic forming deflecting device 22, electrostatic contraction lens 24, electrostatic main deflecting objective lens 25, electrostatic auxiliary deflecting device 28, electrostatic pre-main deflecting device 29, and an electrostatic pre-auxiliary deflecting device 30. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了小型化和简化系统，同时保持绘图精度。解决方案：在用于使电子束2扫描样品13的表面以进行绘图的电子束绘图装置中，电光学系统包括静电透镜和偏转装置，例如静电照明透镜20，第一静电形成偏转装置21，第二静电成形偏转装置22，静电收缩透镜24，静电主偏转物镜25，静电辅助偏转装置28，静电预主偏转装置29和静电预辅助偏转装置30.
版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006108119A Electron beam irradiation device 有权
标题翻译：电子束辐照器件
公开(公告)号：JP2006108119A
公开(公告)日：2006-04-20
申请号：JP2005373397
申请日：2005-12-26
申请人： Toshiba Corp , 株式会社東芝
发明人： OTA TAKUMI , ANDO KOJI , SUGIHARA KAZUYOSHI , OKUMURA KATSUYA
IPC分类号： H01J37/147 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam irradiation device capable of obtaining a condition without charging up an electrode surface of an electrostatic deflection apparatus and an electrostatic lens, maintaining highly precise exposure for a long time, and having an anti-oxidation function of the electrode surface for a long period of time.
SOLUTION: The electron beam irradiation device having an electron gun generating an electron beam and an electrostatic deflection apparatus controlling the electron beam is such that an electrode surface of a deflection electrode 61 formed on a surface inside a cylindrical electrode base material 60 structuring an electrostatic deflection apparatus is covered with a metal coating 62 as a conductive oxide coating.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电子束照射装置，其能够在不使静电偏转装置的电极表面和静电透镜带电的情况下获得条件，并且长时间保持高度精确的曝光，电极表面长时间的氧化功能。解决方案：具有产生电子束的电子枪和控制电子束的静电偏转装置的电子束照射装置使得形成在圆柱形电极基材60内的表面上的偏转电极61的电极表面构成静电偏转装置被作为导电氧化物涂层的金属涂层62覆盖。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2002106563A DRIVING DEVICE 失效
公开(公告)号：JP2002106563A
公开(公告)日：2002-04-10
申请号：JP2000293266
申请日：2000-09-27
申请人： TOSHIBA CORP , EBARA CORP , NSK LTD
发明人： OKUMURA KATSUYA , SUGIHARA KAZUYOSHI , SOFUGAWA TAKUJI , AONO HIROSHI , SAJI NOBUHITO , NAKAMURA TAKESHI
IPC分类号： B65G49/00 , F16C32/06 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a driving device capable of maintaining cleanliness inside a process chamber and keeping a bearing at a low-load condition even if capacity of the process chamber is increased. SOLUTION: Free insertion of a cylindrical shaft 30 from the outside of the process chamber P leads to drive of a workpiece mounted on the end part of the window side through the outside of the process chamber P. In such cases, a shaft diameter of a cylindrical member 30 can be invariant even though the process chamber size is increased in accordance with work. Therefore, the length of a differential exhaust seal 50 opposing the peripheral surface is unchanged, whereby the force supported by a static pressure bearing part 72 can be suppressed to a low level.

10. 发明专利

JP2003195481A METHOD AND DEVICE FOR CORRECTING PHOTOMASK 审中-公开
公开(公告)号：JP2003195481A
公开(公告)日：2003-07-09
申请号：JP2001398182
申请日：2001-12-27
申请人： TOSHIBA CORP
发明人： KANEMITSU SHINGO , HIRANO TAKASHI , SHIGEMITSU FUMIAKI , MIYOSHI MOTOSUKE , SUGIHARA KAZUYOSHI , YAMAZAKI YUICHIRO , SEKINE MAKOTO , SAKAI TAKAYUKI , MORI ICHIRO , OKUMURA KATSUYA
IPC分类号： G03F1/72 , G03F1/74 , H01J37/305 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To remove a defect from a photomask by using an electron beam and to realize a finishing shape having no edge roughness at a high etching rate. SOLUTION: In a photomask correcting method for generating a photomask pattern image by scanning the surface of a photomask with electron beams and generating secondary electrons radiated from the surface of the photomask, specifying the position of a defective part and removing the defect by irradiating an area 75 to be etched which includes the defective part with an electron beam under gas atmosphere having a chemical etching effect to a film material forming the photomask pattern, the electron beam to be applied to the area 75 to be etched is applied to the area 75 as batch electron irradiation on the basis of a synthetic graphic prepared by combining a character aperture corresponding to the inverse pattern of the photomask and a rectangular aperture including the position of the defective part. COPYRIGHT: (C)2003,JPO

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