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1. 发明专利

JP2004047254A Electron beam device using carbon nanotube cold cathode 审中-公开
公开(公告)号：JP2004047254A
公开(公告)日：2004-02-12
申请号：JP2002202504
申请日：2002-07-11
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： NAGAHAMA ICHIROTA , YAMAZAKI YUICHIRO , WATANABE KENJI , KARIMATA TSUTOMU , SATAKE TORU
IPC分类号： H01L21/66 , H01J9/02 , H01J37/20 , H01J37/28 , H01J37/29
摘要： PROBLEM TO BE SOLVED: To provide an electron source for charge-up neutralization capable of irradiating uniform electrons on a sample stably for long hours. SOLUTION: The electron beam device (of an SEM or a mapping projection type) for making observation and evaluation of a sample by irradiating a primary electron beam and the beam on the surface of the sample includes one for neutralizing charge-up of the sample by irradiating electrons on it for another electron source apart from the primary electron beam in a pre-process of the observation and/or evaluation of the sample or on the same process. A carbon nanotube (CNT) cold cathode is used for this other electron source. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2011142090A Inspection device by electron beam, inspection method, and device manufacturing method using its inspection device 有权
标题翻译：电子束检查装置，检查方法和使用其检查装置的装置制造方法
公开(公告)号：JP2011142090A
公开(公告)日：2011-07-21
申请号：JP2011007078
申请日：2011-01-17
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01J37/29 , H01J37/09 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/66
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To improve inspection speed for detecting a defect of a sample such as wafers.
SOLUTION: In an electron beam test device equipped with a first electronic optical system which irradiates the electron beam to the sample to be inspected, a second optical system which makes the second beam irradiated from the wafers to a detector and a control equipment to control the detector, the electron beam test device includes a first column, a second column, and a chamber. The first column is arranged with an electron gun and the first electronic optical system. In the chamber, a stage is installed, and the sample is put thereon. At the second column, on a light axis, a cathode lens, a numerical aperture, a Wien filter, a second lens, a field aperture, a third lens, a fourth lens, and the detector are arranged. An opening part is arranged to be a focus position of the electron beam and a focal position of the cathode lens. The cathode lens and the numerical aperture constitute a telecentric electronic optical system.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提高用于检测诸如晶片的样品的缺陷的检查速度。解决方案：在配备有将电子束照射到待检查样品的第一电子光学系统的电子束测试装置中，使得将第二光束从晶片照射到检测器的第二光学系统和控制设备为了控制检测器，电子束测试装置包括第一列，第二列和室。第一列配置有电子枪和第一电子光学系统。在室中，安装一个台，将样品放在其上。在第二列处，在光轴上布置有阴极透镜，数值孔径，维恩滤波器，第二透镜，场光圈，第三透镜，第四透镜和检测器。开口部被配置为电子束的焦点位置和阴极透镜的焦点位置。阴极透镜和数值孔径构成远心电子光学系统。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2007019033A Inspection device and method by electron beam, and device manufacturing method using above inspection device 审中-公开
标题翻译：电子束检查装置和方法以及使用上述检查装置的装置制造方法
公开(公告)号：JP2007019033A
公开(公告)日：2007-01-25
申请号：JP2006245944
申请日：2006-09-11
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To process an inspection, exposure or the like of a wafer without polluting a sample, a lens or the like. SOLUTION: A differential pumping part 5004 is attached to surround a tip part of a mirror cylinder 5001. A sample 5002 is mounted on a stage 5003. Gas flowing towards a charged particle beam 5050 from an outer peripheral side of the differential pumping part 5004 is evacuated through annular grooves 5005, 5006, a charged particle beam region is sustained in a predetermined vacuum degree. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：处理晶片的检查，曝光等而不污染样品，透镜等。
解决方案：差分泵送部分5004被附接以围绕反射镜缸501的尖端部分。样品5002安装在台5003上。从差动泵送的外周侧朝向带电粒子束5050流动的气体部分5004通过环形槽5005,5006抽真空，带电粒子束区域被保持在预定的真空度。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006080541A Detection apparatus and device manufacturing method 审中-公开
标题翻译：检测装置和装置制造方法
公开(公告)号：JP2006080541A
公开(公告)日：2006-03-23
申请号：JP2005277662
申请日：2005-09-26
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： HATAKEYAMA MASAKI , MURAKAMI TAKESHI , SATAKE TORU , NOMICHI SHINJI , NAGAHAMA ICHIROTA , YAMAZAKI YUICHIRO
IPC分类号： H01L21/66 , G01B15/00 , G01N21/95 , G03F1/00 , G21K7/00 , H01J37/16 , H01J37/244 , H01J37/28 , H01J37/29
CPC分类号： H01J37/244 , G01N21/9501 , G03F1/84 , H01J37/285 , H01J2237/2441 , H01J2237/2446
摘要： PROBLEM TO BE SOLVED: To provide an apparatus that captures precisely a fine geometry on a surface of a sample by detecting electrons caused by irradiating the sample with a beam in an environment different from an atmosphere. SOLUTION: A sensor 32 is an EB-TDI sensor and capable of making electrons directly enter the entire surface of the sensor in a vacuum. The sensor 32 is arranged in a package and the package constitutes a feed through 22. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过检测在与大气不同的环境中用光束照射样品而引起的电子而精确捕获样品表面上的几何形状的装置。解决方案：传感器32是EB-TDI传感器，能够在真空中使电子直接进入传感器的整个表面。传感器32布置在包装中，并且包装构成通过22的进料。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005236060A Lithography margin evaluating method 审中-公开
标题翻译：地理学评估方法
公开(公告)号：JP2005236060A
公开(公告)日：2005-09-02
申请号：JP2004043798
申请日：2004-02-20
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , SATAKE TORU , NOMICHI SHINJI , YAMAZAKI YUICHIRO , NAGAHAMA ICHIROTA
IPC分类号： H01L21/66 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To evaluate a lithography margin by high throughput.
SOLUTION: A lithography margin evaluating method includes steps of forming a plurality of chips in which focusing conditions and dose conditions are changed in a matrix shape on one wafer (S10, S11), and evaluating the minimum line widths of the plurality of formed the chips (S12). Then, the method further includes steps of then determining rough suitable range of the focusing conditions and the dose conditions from the evaluated result (S13), and obtaining an image by using a defect inspecting device for the chip in the determined suitable range (S14). The method also includes the step of obtaining allowance ranges of the focusing conditions and the dose conditions based on the obtained image (S15). The defect inspecting device focuses a plurality of beams on a sample, scans simultaneously the plurality of the beams over a sufficiently longer distance than the maximum interval of the beams, and preferably detects secondary electrons from the plurality of the beams by magnifying the secondary electrons emitted from each scanning point by a magnifying optical system.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过高产量评估光刻裕度。解决方案：光刻裕度评估方法包括以下步骤：在一个晶片上形成多个芯片，其中聚焦条件和剂量条件以矩阵形式改变（S10，S11），并且评估多个形成芯片（S12）。然后，该方法还包括以下步骤：从评估结果（S13）确定聚焦条件和剂量条件的粗略合适范围，并且通过使用在所确定的合适范围内的芯片的缺陷检查装置来获得图像（S14）。该方法还包括基于获得的图像获得聚焦条件和剂量条件的允许范围的步骤（S15）。缺陷检查装置将多个光束聚焦在样本上，同时扫描多个光束在比光束的最大间隔足够长的距离上，并且优选地通过放大发射的二次电子来检测来自多个光束的二次电子从每个扫描点通过放大光学系统。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005209645A Electron beam device equipped with function of detailed observation and inspection as well as observation method of sample by the device 有权
标题翻译：具有详细观察和检查功能的电子束装置作为装置的样品观察方法
公开(公告)号：JP2005209645A
公开(公告)日：2005-08-04
申请号：JP2004376827
申请日：2004-12-27
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： WATANABE KENJI , SATAKE TORU , NOMICHI SHINJI , MURAKAMI TAKESHI , KARIMATA TSUTOMU , YAMAZAKI YUICHIRO , NAGAHAMA ICHIROTA , ONISHI ATSUSHI
IPC分类号： H01L21/66 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide a sample observation method capable of a detailed observation of a sample with the use of an identical electron beam device. SOLUTION: The electron beam device 1 is used equipped with a primary optical system 10 irradiating electron beams on the surface of the sample, and a secondary optical system 30 forming images of the sample surface by detecting secondary electron beams emitted from the sample surface. The surface of the sample is inspected by irradiating the electron beams on the surface S of the sample, and after extracting defective sites of the sample according to the inspection, the electron beams are irradiated again on the extracted defective sites to carry out enlargement or detailed observation of the same. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够使用相同的电子束装置详细观察样品的样品观察方法。解决方案：电子束装置1配备有在样品表面上照射电子束的主要光学系统10和通过检测从样品发射的二次电子束形成样品表面的图像的二次光学系统30 表面。通过在样品的表面S上照射电子束来检查样品的表面，并且在根据检查提取样品的缺陷部位之后，再次将电子束照射在提取的缺陷部位上以进行放大或详细观察一样。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003331774A Electron beam equipment and device manufacturing method using the equipment 审中-公开
标题翻译：电子束设备和使用设备的设备制造方法
公开(公告)号：JP2003331774A
公开(公告)日：2003-11-21
申请号：JP2002141714
申请日：2002-05-16
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： NAGAHAMA ICHIROTA , YAMAZAKI YUICHIRO , WATANABE KENJI , HATAKEYAMA MASAKI , SATAKE TORU , NOMICHI SHINJI
IPC分类号： G01N23/225 , G01K1/08 , G01N23/00 , G01Q30/04 , G21K7/00 , H01J37/05 , H01J37/22 , H01J37/244 , H01J37/28 , H01J37/285 , H01J37/29 , H01L21/66
CPC分类号： H01J37/28 , H01J2237/0044 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide an electron beam equipment capable of obtaining an image for inspection with little distortion and enabling a surface observation and a defect detection as well as a device manufacturing method for inspecting a device on the way of a process with a good throughput with the use of the electron beam equipment. SOLUTION: A defect inspection device is provided with a first irradiating means S for irradiating a sample 9 by emitting primary electron beams, mapping optical mechanisms 11 to 13 or imaging secondary electrons emitted from the surface of the sample 9 irradiated with the secondary electron beams, a detector D for detecting the secondary electrons, and an image treatment mechanism 18 for treating signals from the detector D. Further, a second irradiating means may be provided for irradiating the sample 9 by emitting electron beams, with which, the sample 9 is irradiated and then is irradiated with the first irradiating means S to observe the sample 9. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种电子束设备，其能够获得几乎没有变形的检查图像，并且能够进行表面观察和缺陷检测，以及用于在处理过程中检查设备的设备制造方法具有使用电子束设备的良好吞吐量。解决方案：缺陷检查装置设置有第一照射装置S，用于通过发射一次电子束照射样品9，映射光学机构11至13或成像从被照射次级的样品9的表面发射的二次电子电子束，用于检测二次电子的检测器D.以及用于处理来自检测器D的信号的图像处理机构18.此外，可以提供第二照射装置，用于通过发射电子束照射样品9，使用该电子束 9照射，然后用第一照射装置S照射以观察样品9.版权所有（C）2004，JPO

8. 发明专利

JP2006054192A Electron beam device and device manufacturing method using the same 审中-公开
标题翻译：电子束装置及其装置的制造方法
公开(公告)号：JP2006054192A
公开(公告)日：2006-02-23
申请号：JP2005258657
申请日：2005-09-07
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： SUGIHARA KAZUYOSHI , YAMAZAKI YUICHIRO , NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU
IPC分类号： H01J37/28 , G03F7/20 , H01J37/12 , H01J37/18 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device in which differential exhaust is possible even by an electrostatic lens in which vacuum condition is severer than a magnetic lens, differential exhaust is possible under a system which easily starts discharge such as a decelerating field objective lens, combination of an electron gun using LaB6 cathode and differential exhaust is possible, and the electron gun is operated under the space charge limiting condition with a low shot noise, and a device manufacturing method for manufacturing a semiconductor device using the electron beam device.
SOLUTION: The electron beam device comprises an electron optical system having an electron gun 2 and an objective lens 7 consisting of an electrostatic lens that irradiates primary electron beams emitted from the electron gun on an inspection object, and an exhaust head 12 of a differential exhaust system arranged outside of the objective lens. The spacing between the electrode of the objective lens 7 located at the nearest the inspection object W and the inspection object is same as or smaller than the distance d1-d3 between the member of the exhaust head limiting exhaust conductance of the differential exhaust system and the inspection object W.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种电子束装置，其中甚至可以通过其中真空条件比磁性透镜更严格的静电透镜来实现差分排气，在容易开始放电的系统（例如，减速场物镜，可以使用LaB6阴极和差分排气的电子枪的组合，并且电子枪在具有低散射噪声的空间电荷限制条件下运行，以及使用该电子制造半导体器件的器件制造方法梁装置。解决方案：电子束装置包括具有电子枪2的电子光学系统和由在检查对象上照射从电子枪发射的一次电子束的静电透镜构成的物镜7和排出头12 布置在物镜外部的差动排气系统。位于最接近检查对象W的物镜7的电极与检查对象之间的间隔与差动排气系统的排气头的排气头的构件之间的距离d1-d3小于或等于检验对象W.版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005235777A Inspection apparatus and method by electron beam, and device manufacturing method using the inspection apparatus 审中-公开
标题翻译：电子束的检查装置和方法以及使用检查装置的装置制造方法
公开(公告)号：JP2005235777A
公开(公告)日：2005-09-02
申请号：JP2005061093
申请日：2005-03-04
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： YAMAZAKI YUICHIRO , WATANABE KENJI , SOFUGAWA TAKUJI , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SEIJI , KARIMATA TSUTOMU , NAKASUJI MAMORU , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , NAGAHAMA ICHIROTA , NAGAI TAKAMITSU , SUGIHARA KAZUYOSHI
IPC分类号： H01L21/66 , H01J37/29
摘要： PROBLEM TO BE SOLVED: To improve an inspection speed detecting a failure of a sample of a wafer, etc. SOLUTION: An inspection apparatus by an electron beam is one of a mapping projection type and comprises: a primary electron optical system for forming the electron beam emitted from en electron gun into a rectangle and irradiating onto a face of a sample to be inspected; a secondary electron optical system for converging secondary electrons emitted from the sample; a detection device for converting the converged secondary electrons into an optical image through a fluorescent plate to image them to a line sensor; and a control device for controlling charge moving time to transfer the line image which is imaged in a pixel string provided with the line sensor, cooperatively with the moving speed of a stage to move the sample. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高检测晶片样品故障等的检查速度。解决方案：电子束检查装置是映射投影型之一，包括：一次电子用于将从电子枪发射的电子束形成矩形并照射到要检查的样品的面上的光学系统; 用于会聚从样品发射的二次电子的二次电子光学系统; 检测装置，用于通过荧光板将会聚的二次电子转换为光学图像，以将其成像到线传感器; 以及控制装置，用于控制电荷移动时间，以便与用于移动样本的载物台的移动速度协调地传送被成像在设置有线传感器的像素串中的线图像。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2003077414A Electron beam equipment and device manufacturing method using same 有权
标题翻译：电子束设备和使用相同的设备制造方法
公开(公告)号：JP2003077414A
公开(公告)日：2003-03-14
申请号：JP2001269857
申请日：2001-09-06
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： SUGIHARA KAZUYOSHI , YAMAZAKI YUICHIRO , NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU
IPC分类号： G21K5/00 , G03F7/20 , G21K5/04 , H01J37/12 , H01J37/18 , H01J37/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam equipment enabling differential evacuation even with an electrostatic lens which requires strict vacuum conditions.
SOLUTION: The electron beam equipment 1 is provided with an electronic optical system with an electron gun 2 and an objective lens 7 composed of an electrostatic lens which irradiates primary electrons emitted from the electron gun to a test sample and with a differential exhaust system 12 arranged outside of the objective lens. The distance between an electrode of the objective lens 7 nearest to the test sample W and the test sample is arranged the same as or smaller than that d1 to d3 between the member 12 restricting the exhaust conductance of the differential evacuation system and the test sample W.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供即使使用需要严格的真空条件的静电透镜也能够进行差分抽空的电子束设备。解决方案：电子束设备1设置有电子枪2和由静电透镜构成的物镜7，该静电透镜将从电子枪发射的一次电子照射到测试样品，并配置有差动排气系统12，在物镜外面。最接近测试样品W的物镜7的电极和测试样品之间的距离被布置成在限制差分排空系统的排气电导的构件12与测试样品W之间的d1至d3相同或更小。

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