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1. 发明专利

JP2001240848A GRINDING ABRASIVE GRAIN AND CHEMICAL MACHINE-GRINDING SLURRY 失效
公开(公告)号：JP2001240848A
公开(公告)日：2001-09-04
申请号：JP2000055761
申请日：2000-03-01
申请人： SHIBAURA MECHATRONICS CORP , TAMA KAGAKU KOGYO KK , TOSHIBA CORP , SHISEIDO CO LTD
发明人： SAKURAI NAOAKI , NONAKA MIKIO , CHIYOU SHIYUNREN , HIRABAYASHI HIDEAKI , KANAMARU TETSUYA , ONO KAZUHISA
IPC分类号： B24B37/00 , C09K3/14 , C23C16/30 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide grinding abrasive grains not showing a change with time cause by the effect of a co-presenting substance and being washed out from a treated material after its grinding. SOLUTION: In the grinding abrasive grains used as chemical machine- grinding (CMP) slurry, a polysiloxane coated film informed on the entire surface of hard inorganic compound particles such as an alumina, a θ-alumina or the like. The above polysiloxane coated film is formed by performing chemical vapor deposition with a siloxane-based compound and a Si-H group addition reacting on the inorganic compound fine particles in a chamber, and further making them as hydrophilic by performing a heat-treatment or hydroxylation reaction.

2. 发明专利

JP2002359223A CLEANING LIQUID 失效
公开(公告)号：JP2002359223A
公开(公告)日：2002-12-13
申请号：JP2001163303
申请日：2001-05-30
申请人： SHIBAURA MECHATRONICS CORP , TOSHIBA CORP , TAMA KAGAKU KOGYO KK
发明人： HIRABAYASHI HIDEAKI , HAYASHI TOSHIHIDE , NONAKA MIKIO , SAKURAI NAOAKI , KATO KATSUHIRO
IPC分类号： B01D19/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a cleaning liquid that can remove a complex layer on the surface of an embedded wiring of Cu appropriately, without damaging embedded wiring of Cu after CMP in the formation process of the embedded wiring made of Cu or a Cu alloy in the manufacture of an electronic device such as a semiconductor device. SOLUTION: The washing liquid is used after a thin film made of copper or a copper alloy is polished chemically and mechanically by a polishing composition that contains water-soluble organic acid for generating a copper complex that reacts to copper, is insoluble to water substantially, and at the same time, is mechanically more brittle than copper. In this case, the cleaning liquid is to contain at least one kind of organic alkali.

3. 发明专利

JP2004152785A Abrasive composition for copper diffusion preventive film and method for manufacturing semiconductor device 审中-公开
公开(公告)号：JP2004152785A
公开(公告)日：2004-05-27
申请号：JP2002312944
申请日：2002-10-28
申请人： Shibaura Mechatronics Corp , Toshiba Corp , 株式会社東芝 , 芝浦メカトロニクス株式会社
发明人： HAYASHI TOSHIHIDE , KOBAYASHI NOBUO , YAMAUCHI KATSUHIKO , NONAKA MIKIO , HIRABAYASHI HIDEAKI , SAKURAI NAOAKI
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide an abrasive composition for a copper diffusion preventive film which can polish the copper diffusion preventive film at high speed. SOLUTION: The abrasive composition for the copper diffusion preventive film contains colloidal silica particles and a pH regulator of an amount for shifting a zeta potential of the colloidal silica particles to a positive side. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2000150643A DRY ETCHING METHOD 失效
公开(公告)号：JP2000150643A
公开(公告)日：2000-05-30
申请号：JP31791498
申请日：1998-11-09
申请人： TOSHIBA CORP , SHIBAURA MECHATRONICS CORP
发明人： KOBAYASHI AKIRA , JINBO SADAYUKI , HATTORI KEI , YOSHIMORI HIROAKI , NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/28 , H01L21/3065 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide an etching method for a metal film wherein a connection hole is formed at an inter-layer insulating film of a semiconductor substrate and a metal film comprising at least two layers is formed, and then a metal film other than the connection hole is removed by etching with no seam at the center of the connection hole widened. SOLUTION: An inter-layer insulating film of a semiconductor substrate 3 is etched in an etching chamber to form a connection hole while a metal film comprising at least two layers is formed in the connection hole and on the inter-layer insulating film, and then a metal film other than the connection hole is removed by etching. Here, a mixed gas fluorine atom and oxygen atom used as a reactive gas, a metal film other than a connection hole is etched with each layer substantially at the same etching speed at 150 deg.C or above or 150-250 deg.C of a semiconductor substrate. Thus, the metal film is packed in the connection hole to flatten its surface. The metal film may comprise a barrier metal layer and a tungsten film over it.

5. 发明专利

JP2004023068A Abrasive slurry for copper-based metal and method of manufacturing semiconductor device 审中-公开
公开(公告)号：JP2004023068A
公开(公告)日：2004-01-22
申请号：JP2002180227
申请日：2002-06-20
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： KOBAYASHI NOBUO , NONAKA MIKIO , YAMAUCHI KATSUHIKO
IPC分类号： B24B57/02 , B24B37/00 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide an abrasive slurry for copper-based metals, which contains alumina abrasive grains that are restrained from subsiding, condensing and solidifying and stably dispersed in the slurry when the slurry is stored. SOLUTION: The abrasive slurry contains a water-soluble organic acid that produces a complex reacting on copper, the alumina abrasive grains, and polyacrylic alkyl oxide. The amount (wt.%) of polyacrylic alkyl oxide contained in the abrasive slurry for copper-based metals is calculated through formula, 3146.9×A -0.6166 (wherein, A denotes weight-average molecular weight). COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2011077061A Plasma generation apparatus, plasma processing apparatus, plasma generation method, and plasma processing method 有权
标题翻译：等离子体生成装置，等离子体处理装置，等离子体生成方法和等离子体处理方法
公开(公告)号：JP2011077061A
公开(公告)日：2011-04-14
申请号：JP2009207750
申请日：2009-09-09
申请人： Chube Univ , Shibaura Mechatronics Corp , 学校法人中部大学 , 芝浦メカトロニクス株式会社
发明人： SUGAI HIDEO , NONAKA MIKIO , IVAN PETROV GANASHEV
IPC分类号： H01L21/3065 , C23C16/511 , H01L21/31 , H05H1/24 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma generation apparatus, a plasma processing apparatus, a plasma generation method and a plasma processing method, that can generate a plasma of large area and uniform plasma density even when processing pressure is high. SOLUTION: The plasma generation apparatus includes a processing container, a gas supply section which supplies a process gas into the processing container, a transmission window occupying a part of a wall surface of the processing container, a microwave introduction section which introduces a microwave into the transmission window, and a first high-density plasma generation section which has a plurality of hole portions penetrating in a thickness direction and is provided in the processing container while isolated from the transmission window, wherein the first high-density plasma generation section generates a plasma by a hollow discharge at the first hole portions. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：即使在处理压力高的情况下，也能够提供等离子体产生装置，等离子体处理装置，等离子体产生方法和等离子体处理方法，其能够产生大面积等离子体等离子体密度。解决方案：等离子体产生装置包括处理容器，将处理气体供应到处理容器中的气体供应部分，占据处理容器的壁表面的一部分的透射窗;微波引入部分，其引入微波进入传输窗口，以及第一高密度等离子体产生部分，其具有沿厚度方向穿透的多个孔部分，并且在与透射窗隔离的同时设置在处理容器中，其中第一高密度等离子体产生部分在第一孔部分通过中空排出产生等离子体。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2004022855A Process for producing semiconductor device 审中-公开
公开(公告)号：JP2004022855A
公开(公告)日：2004-01-22
申请号：JP2002176761
申请日：2002-06-18
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： KOBAYASHI NOBUO , NONAKA MIKIO , YAMAUCHI KATSUHIKO
IPC分类号： C11D3/26 , C11D3/28 , C11D7/32 , H01L21/304 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a semiconductor device in which the surface of a buried wiring layer formed by CMP processing can be cleaned by removing copper complex effectively from the surface.
SOLUTION: The process for producing a semiconductor device comprises a step for forming grooves corresponding to the shape of the wiring layer in an insulating film formed on a semiconductor substrate, a step for forming a wiring material film of copper or a copper alloy on the insulating film including the inner surface of the groove, a step for forming the wiring layer in the groove by polishing the wiring material film chemomechanically using polishing slurry for copper based metal containing an organic acid for forming a copper complex and an oxidizing agent, and a step for cleaning the surface of the insulating film including the wiring layer with cleaning liquid containing organoalkali and chelating agent.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JPH09246239A ETCHING OF METAL FILM 失效
公开(公告)号：JPH09246239A
公开(公告)日：1997-09-19
申请号：JP4496696
申请日：1996-03-01
申请人： SHIBAURA ENG WORKS LTD , TOSHIBA CORP
发明人： NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU , YOSHIMORI HIROAKI , HATTORI KEI , KOBAYASHI AKIRA
IPC分类号： H01L21/28 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To selectively leave only a tungsten film in a connecting hole without any narrow portion by etching a metal film other than the connecting hole using the gas mixing the gas including fluorine atoms, the gas including chlorine atoms and the oxygen gas as the reactive gas. SOLUTION: After forming a metal film 13 on a connecting hole formed to an interlayer insulation film 10 and the interlayer insulation film 10, a metal film 13 other than the connecting hole is removed by the etching. In the case of etching the metal film 13 in such a manner, the metal film other than the connecting hole is etched using the gas mixing the gas including fluorine atoms, the gas including chlorine gas and the oxygen gas as the reactive gas. For example, a titanium film 11 and a titanium nitride film 12 are formed on the connecting hole and thereafter a tungsten film 13 is formed by the DVD method. Next, a tungsten film 13 is etched in the discharge isolation type chemical dry etching apparatus using CF4 gas, O2 gas, Cl2 gas as the reactive gas.

9. 发明专利

JPH05217957A REMOVAL OF ORGANIC COMPOUND FILM 失效
公开(公告)号：JPH05217957A
公开(公告)日：1993-08-27
申请号：JP19099392
申请日：1992-07-17
申请人： TOSHIBA CORP , SHIBAURA ENG WORKS LTD
发明人： JINBO SADAYUKI , MORI HARUKI , NONAKA MIKIO , KASAI MASARU
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a removal method of an organic compound film in which an organic compound film can be removed rapidly and surely without damaging a substrate to be treated. CONSTITUTION:In a removal method of an organic compound film which removes an organic compound film formed on a surface of a treatment substrate 11 by etching, the treatment substrate 11 is arranged in a reaction chamber 10. While the treatment substrate 11 is heated or cooled, active species containing halogen element and water vapor gas are introduced inside the chamber 10 and the organic compound film is partially etched. Then, a mixture gas of active species of hologen element and active species of oxygen element is introduced inside the chamber 10 and the remaining organic compound film is etched.

10. 发明专利

JPS61130493A Dry etching method 失效
标题翻译：干蚀刻方法
公开(公告)号：JPS61130493A
公开(公告)日：1986-06-18
申请号：JP25117484
申请日：1984-11-28
申请人： Tokuda Seisakusho Ltd , Toshiba Corp
发明人： NONAKA MIKIO , SHIBAGAKI MASAHIRO
IPC分类号： C23F4/00 , C23F1/08 , C23F1/12
摘要： PURPOSE: To etch uniformly a large quantity of materials to be treated by regulating the flow rate of gaseous oxygen with respect to the total flow rate of an etching gas within the range of a specific rate.
CONSTITUTION: A gas introducing pipe 5 and a gas discharging pipe 9 are provided to face the side faces of vacuum vessel 1 and an imposing rack 11 to be imposed horizontally with the materials 2 to be treated into multiple stage is provided in the vessel 1. The rack 11 is imposed on a supporting base 13 attached with a shaft 12 and the end of the shaft 12 is connected through the bottom surface of the vessel 1 to a motor 14. The base 13 is rotated during etching. The flow rate of the gaseous oxygen in the etching gas to be introduced through the pipe 5 into the vacuum vessel is regulated to 40W80% with respect to the total flow rate.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过调节气态氧流量相对于特定速率范围内的蚀刻气体的总流量，均匀地均匀地蚀刻待处理的大量材料。构成：在容器1中设置有气体导入管5和气体排出管9，以与真空容器1的侧面和水平地施加水平地施加待处理材料2的多个台阶。齿条11被施加在安装有轴12的支撑基座13上，并且轴12的端部通过容器1的底表面连接到马达14.底座13在蚀刻期间旋转。通过管5向真空容器中导入的蚀刻气体中的气态氧的流量相对于总流量调节为40〜80％。

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