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1. 发明专利

JPH09246239A ETCHING OF METAL FILM 失效
公开(公告)号：JPH09246239A
公开(公告)日：1997-09-19
申请号：JP4496696
申请日：1996-03-01
申请人： SHIBAURA ENG WORKS LTD , TOSHIBA CORP
发明人： NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU , YOSHIMORI HIROAKI , HATTORI KEI , KOBAYASHI AKIRA
IPC分类号： H01L21/28 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To selectively leave only a tungsten film in a connecting hole without any narrow portion by etching a metal film other than the connecting hole using the gas mixing the gas including fluorine atoms, the gas including chlorine atoms and the oxygen gas as the reactive gas. SOLUTION: After forming a metal film 13 on a connecting hole formed to an interlayer insulation film 10 and the interlayer insulation film 10, a metal film 13 other than the connecting hole is removed by the etching. In the case of etching the metal film 13 in such a manner, the metal film other than the connecting hole is etched using the gas mixing the gas including fluorine atoms, the gas including chlorine gas and the oxygen gas as the reactive gas. For example, a titanium film 11 and a titanium nitride film 12 are formed on the connecting hole and thereafter a tungsten film 13 is formed by the DVD method. Next, a tungsten film 13 is etched in the discharge isolation type chemical dry etching apparatus using CF4 gas, O2 gas, Cl2 gas as the reactive gas.

2. 发明专利

JPH05217957A REMOVAL OF ORGANIC COMPOUND FILM 失效
公开(公告)号：JPH05217957A
公开(公告)日：1993-08-27
申请号：JP19099392
申请日：1992-07-17
申请人： TOSHIBA CORP , SHIBAURA ENG WORKS LTD
发明人： JINBO SADAYUKI , MORI HARUKI , NONAKA MIKIO , KASAI MASARU
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a removal method of an organic compound film in which an organic compound film can be removed rapidly and surely without damaging a substrate to be treated. CONSTITUTION:In a removal method of an organic compound film which removes an organic compound film formed on a surface of a treatment substrate 11 by etching, the treatment substrate 11 is arranged in a reaction chamber 10. While the treatment substrate 11 is heated or cooled, active species containing halogen element and water vapor gas are introduced inside the chamber 10 and the organic compound film is partially etched. Then, a mixture gas of active species of hologen element and active species of oxygen element is introduced inside the chamber 10 and the remaining organic compound film is etched.

3. 发明专利

JPH07115086A DETECTING METHOD FOR END POINT OF ETCHING 失效
公开(公告)号：JPH07115086A
公开(公告)日：1995-05-02
申请号：JP26113893
申请日：1993-10-19
申请人： SHIBAURA ENG WORKS LTD
发明人： KASAI MASARU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to reliably detect an etching end point of a material to be treated, the surface of which is formed with a silicon nitride film. CONSTITUTION:A material to be treated A, the surface of which is formed with a silicon nitride film is placed inside a vacuum container 1. A reactive gas is activated in a discharge chamber 7 and then introduced to a vacuum container 1. An active species of the reactive gas is applied to the silicon nitride film and etching-processed. Chemical luminescence radiated from the silicon nitride film is detected through a photoelectric converter 11 and the end point of the etching is detected from the change in output voltage.

4. 发明专利

JPH06291085A CONTROL METHOD OF PLASMA 失效
公开(公告)号：JPH06291085A
公开(公告)日：1994-10-18
申请号：JP7471893
申请日：1993-03-31
申请人： SHIBAURA ENG WORKS LTD
发明人： MORI HIDEKI , KASAI MASARU
IPC分类号： H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To effectively prevent the occurrence of gate breakdown, by a method wherein plasma density is increased by applying a magnetic field to plasma from an electromagnet while etching progresses, and the electromagnet is controlled so as to decrease the intensity of the magnetic field before etching ends. CONSTITUTION:When a magnetic field is applied to plasma P by using a magnetic pole 12 and a mangetic pole 13 of an electromagnet while etching progresses, the plasma densely gathers in the travelling direction of electrons in an electric field, so that the density of one side is increased and bias is generated in the plasma P. When the magnetic field intensity is decreased before the etching ends, the density of the plasma P is decreased, and the plasma the bias has been generated during the etching is made uniform. Hence potential difference is not generated in the electric field, so that an excess current can be effectively prevented from flowing in an aluminum film 4a of a wafer 4. Thereby the aluminum film 4b of the wafer 4 is not damaged and gate breakdown can be effectively prevented.

5. 发明专利

JPH10178014A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10178014A
公开(公告)日：1998-06-30
申请号：JP33667096
申请日：1996-12-17
申请人： SHIBAURA ENG WORKS LTD
发明人： KASAI MASARU , ONODA TOSHIYASU , FUKUDA JOJI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To avoid a reduction in throughput in manufacturing a semiconductor device by chemical dry etching, and also remove substantially all residues of a metal film while taking care of excessively digging the metal film of an electrode connection hole. SOLUTION: A tungsten film 14 in a region other than an electrode connection hole 11 is removed by chemical dry etching. This step for chemical dry etching comprises a first etching in which an etching speed is relatively high; and a second etching in which an etching speed after this first etching is relatively low. The first etching uses a first reactive gas of a mixture of a gas containing fluoric atoms, a gas containing chlorine atoms and an oxygen gas, and the second etching uses a second reactive gas of a mixture of a gas containing fluoric atoms and an oxygen gas and is carried out at lower power than the first dry etching. In this second reactive gas, a ratio of a gas containing fluoric atoms to an oxygen gas is 1:(1.5 to 1.0).

6. 发明专利

JPH10163127A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10163127A
公开(公告)日：1998-06-19
申请号：JP32421896
申请日：1996-12-04
申请人： SHIBAURA ENG WORKS LTD
发明人： ONODA TOSHIYASU , MUTO MAKOTO , KASAI MASARU , YOSHIMORI HIROAKI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To fully and quickly eliminate fluorine remaining on a barrier metal film surface and the like. SOLUTION: A tungsten film 15 at a region other than an electrode connection hole 12 is dry-etched and eliminated by a reaction gas containing fluorine atom. When the dry etching by the reaction gas containing the fluorine atom is completed, fluorine remains on the surface of the exposed titanium nitride film and the surface of the tungsten film 15 of the electrode connection hole 12. A semiconductor substrate 10 is heated to approximately 50 deg.C or higher in an atmosphere of a gas containing hydrogen such as steam. Thus, fluorine remaining on the semiconductor substrate 10 is bonded to hydrogen to be HF, and discharged from the semiconductor substrate.

7. 发明专利

JPH06290897A PLASMA GENERATING DEVICE 失效
公开(公告)号：JPH06290897A
公开(公告)日：1994-10-18
申请号：JP7458693
申请日：1993-03-31
申请人： SHIBAURA ENG WORKS LTD
发明人： MORI HIDEKI , KASAI MASARU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To maintain the uniformity at a high etching rate while dispersion in the plasma distribution is lessened, and prevent the plasma generating device from being damaged, by installing a pair of main magnetic poles confronting in the direction perpendicular to the electric field on the outside of an etching chamber, and also installing a pair of aux. magnetic poles oppositely situated in the direction perpendicular to the first named direction of confronting. CONSTITUTION:In an etching chamber 1, a counter-electrode 5b is installed confronting an electrode 5a, and an electric field is applied perpendicularly to the plane of this description. In a plasma generating device, an iron core 11 and a plurality of coils 14,... wound on the core are arranged so that the main magnetic poles 12, 13 of a main electric magnet 10 are opposed while the chamber 1 is interposed. On both outer sides of this chamber 1, aux. magnets 15, 16 are arranged perpendicular to the confronting direction of the main magnetic poles 12, 13. The magnets 15, 16 are composed of iron cores 17, 18 having aux. magnetic poles 21, 22 and coils 19, 20 wound thereon. When current is fed to the coil 14 of the magnet 10 and coils 19, 20 of the magnets 15, 16, the magnetic poles 21, 22 become S-pole to the N-pole of the magnetic pole 12, to become N-pole apparently relative to the S-pole of the magnetic pole 13, and the line of magnetic force from the magnetic pole 12 enters to the magnetic pole 13 and the ones 21, 22, and also the lines of magnetic force from the magnetic poles 21, 22 enter to the magnetic pole 13. As a result, the lines of magnetic force are free from risk of widening and can well be controlled.

8. 发明专利

JPH09266195A METHOD AND APPARATUS FOR ETCHING METALLIC FILM 失效
公开(公告)号：JPH09266195A
公开(公告)日：1997-10-07
申请号：JP7274496
申请日：1996-03-27
申请人： SHIBAURA ENG WORKS LTD
发明人： KASAI MASARU , ONODA TOSHIYASU , FURUMITO JIYUNSUKE
IPC分类号： C23F4/00 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To make it possible to detect a finishing point of etching for a metallic film surely without generating damage to a lower layer on the metallic film. SOLUTION: A reactive gas in a gas conduction tube 10 is made of a mixture of CF4 , Cl2 , and O2 . The reactive gas is changed into plasma by a plasma generating device 12 and flows into a vacuum container 7. The reactive gas in a plasma state is reacted with a metallic film of a silicon substrate on a stage 8 to carry out etching. At the etching, a luminous effect is generated in the vacuum container 7. The luminance is related with a surface area of the metallic film of the semiconductor substrate. The luminance is detected by a photoelectric conversion device 17, and a control unit 19 determines a final point of etching according to an output change in measurement of the luminance.

9. 发明专利

JP2000150643A DRY ETCHING METHOD 失效
公开(公告)号：JP2000150643A
公开(公告)日：2000-05-30
申请号：JP31791498
申请日：1998-11-09
申请人： TOSHIBA CORP , SHIBAURA MECHATRONICS CORP
发明人： KOBAYASHI AKIRA , JINBO SADAYUKI , HATTORI KEI , YOSHIMORI HIROAKI , NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/28 , H01L21/3065 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide an etching method for a metal film wherein a connection hole is formed at an inter-layer insulating film of a semiconductor substrate and a metal film comprising at least two layers is formed, and then a metal film other than the connection hole is removed by etching with no seam at the center of the connection hole widened. SOLUTION: An inter-layer insulating film of a semiconductor substrate 3 is etched in an etching chamber to form a connection hole while a metal film comprising at least two layers is formed in the connection hole and on the inter-layer insulating film, and then a metal film other than the connection hole is removed by etching. Here, a mixed gas fluorine atom and oxygen atom used as a reactive gas, a metal film other than a connection hole is etched with each layer substantially at the same etching speed at 150 deg.C or above or 150-250 deg.C of a semiconductor substrate. Thus, the metal film is packed in the connection hole to flatten its surface. The metal film may comprise a barrier metal layer and a tungsten film over it.

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