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1. 发明专利

JP2000150643A DRY ETCHING METHOD 失效
公开(公告)号：JP2000150643A
公开(公告)日：2000-05-30
申请号：JP31791498
申请日：1998-11-09
申请人： TOSHIBA CORP , SHIBAURA MECHATRONICS CORP
发明人： KOBAYASHI AKIRA , JINBO SADAYUKI , HATTORI KEI , YOSHIMORI HIROAKI , NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/28 , H01L21/3065 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide an etching method for a metal film wherein a connection hole is formed at an inter-layer insulating film of a semiconductor substrate and a metal film comprising at least two layers is formed, and then a metal film other than the connection hole is removed by etching with no seam at the center of the connection hole widened. SOLUTION: An inter-layer insulating film of a semiconductor substrate 3 is etched in an etching chamber to form a connection hole while a metal film comprising at least two layers is formed in the connection hole and on the inter-layer insulating film, and then a metal film other than the connection hole is removed by etching. Here, a mixed gas fluorine atom and oxygen atom used as a reactive gas, a metal film other than a connection hole is etched with each layer substantially at the same etching speed at 150 deg.C or above or 150-250 deg.C of a semiconductor substrate. Thus, the metal film is packed in the connection hole to flatten its surface. The metal film may comprise a barrier metal layer and a tungsten film over it.

2. 发明专利

JP2000349071A CHEMICAL DRY ETCHING 失效
公开(公告)号：JP2000349071A
公开(公告)日：2000-12-15
申请号：JP15642299
申请日：1999-06-03
申请人： SHIBAURA MECHATRONICS CORP , TOSHIBA CORP
发明人： SATO KOICHI , JINBO SADAYUKI , YOSHIDA YUKIMASA , MUTO MAKOTO , TAZAWA YASUSHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To obtain a dry etching method which can reduce the amount of PFC discharged in the etching and to have less effects on global warming phenomenon, by using an etching gas having a short atmosphere life and GWP. SOLUTION: A mixture gas containing oxygen, octafluorocyclopentane (C5F8) and nitrogen as necessary is activated, and then a semiconductor substrate 9 and a film formed on the substrate are subjected to a dry etching process within an etching chamber 5 with use of the activated gas. A gas of C5F8 is used as an etching gas having short atmospherie life-time and GWP. Thereby the amount of PFC emitted during the etching operation can be reduced to have less effects on global warming phenomenon. The gas of C5F8 having short atmosphere life and GWP used as an alternate gas is expected as gas material for the purpose of reducing the amount of PFC gas.

3. 发明专利

JP2012233880A Substrate inspection device, substrate inspection method, and adjusting method of substrate inspection device 有权
标题翻译：基板检查装置，基板检查方法和基板检查装置的调整方法
公开(公告)号：JP2012233880A
公开(公告)日：2012-11-29
申请号：JP2012082640
申请日：2012-03-30
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： MATSUSHIMA DAISUKE , MUTO MAKOTO , HAYASHI YOSHINORI , WAKABA HIROYUKI , ONO YOKO , MORI HIDEKI
IPC分类号： G01N21/956 , G01B11/00 , G01B11/24
摘要： PROBLEM TO BE SOLVED: To provide a substrate inspection device for inspecting a minute cavity occurring in a joining interface of joined two substrate layers even if there is a portion not transmitting inspection light in either of the two joined substrate layers.SOLUTION: A substrate inspection device 100 includes a light source unit 30 for radiating the inspection light in a belt like manner so as to be obliquely incident to a surface of the substrate 100, and a line sensor camera 20 arranged at a prescribed position opposite to the light source unit 30 across the belt like irradiated region formed on the surface of the substrate by the inspection light. Substrate image information is generated on the basis of a video signal output from the line sensor camera 20 while the light source unit 30 and the line sensor camera 20 are moved relatively to the substrate 100. Inspection result information for a minute cavity occurring in a joining interface of a first substrate layer 101 and a second substrate layer 102 of the substrate 100 is generated on the basis of the substrate image information.
摘要翻译：要解决的问题：即使在两个接合的基板层中的任一个中存在不传输检查光的部分，也提供用于检查在接合的两个基板层的接合界面中出现的微小空腔的基板检查装置。＆lt; P＆gt;解决方案：基板检查装置100包括：光源单元30，用于以类似方式辐射检查光以倾斜地入射到基板100的表面;以及线传感器相机20，布置在规定的通过检查光穿过形成在基板的表面上的带状照射区域与光源单元30相对的位置。在光源单元30和线传感器摄像机20相对于基板100移动的同时，基于从线传感器摄像机20输出的视频信号生成基板图像信息。接合中发生的微小空洞的检查结果信息基于基板图像信息生成基板100的第一基板层101和第二基板层102的界面。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2001284321A DRY ETCHING DEVICE 失效
公开(公告)号：JP2001284321A
公开(公告)日：2001-10-12
申请号：JP2000091214
申请日：2000-03-29
申请人： SHIBAURA MECHATRONICS CORP
发明人： KASE YOSHIHISA , MUTO MAKOTO , TAZAWA YASUSHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a dry etching device which can etch substrates to be processed in various shapes, based on a satisfactory interface uniformity. SOLUTION: A gas inlet port 10 introducing process gas into a processing chamber 1 in a vacuum vessel 2, and an exhaust port 13 exhausting the inner part of the processing chamber 1 are arranged oppositely across the substrate to be processed S. A rotation-holding means 5 holds the substrate to be processed S in the processing chamber 1 and rotates it. Processing gas, excited by plasma generated by a plasma generation means 8 is discharged to the substrate to be processed S from the side of the substrate to be processed S by a gas supply means 9 and is supplied to an etching face. Since the supply quantity of process gas to the substrate to be processed S is uniformized for the whole etching face, a rotation control means 14 changes the angular velocity of the rotation of the substrate to be processed S during one turn.

5. 发明专利

JP2003077888A METHOD FOR ETCHING SiGe FILM 有权
标题翻译：蚀刻SiGe膜的方法
公开(公告)号：JP2003077888A
公开(公告)日：2003-03-14
申请号：JP2001264010
申请日：2001-08-31
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： KASAI MASARU , MUTO MAKOTO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To remove a SiGe film with a sufficiently large selection rate with respect to a Si film, a SiO
2 film or a Si
3 N
4 film, to make an etching rate to be sufficiently small, and to improve the controllability of etching.
SOLUTION: The etching method of the SiGe film removes the SiGe film in a part that is not covered by the mask of a substrate. The SiGe film is dry-etched by using mix gas obtained by mixing gas in which hydrogen atoms and fluorine atoms are connected with argon gas and oxygen gas. HF is suitable in 'gas in which the hydrogen atoms and the fluorine atoms are connected' mixed in reactive gas. Reactive gas becomes suitable for selectively etching the SiGe film with respect to the Si film and the SiO
4 film by setting the etching rate of the SiGe film to be 10 to 100 nm/min, and setting the selection rates for etching the SiGe film with respect to the Si film and the SiO
4 film to be not less than 10 and not less than 50, respectively.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了使SiGe膜以相对于Si膜，SiO 2膜或Si 3 N 4膜的选择率足够大的方式除去，使得蚀刻速率足够小，并且提高了蚀刻的可控性。解决方案：SiGe膜的蚀刻方法除去未被基板掩模覆盖的部分中的SiGe膜。使用通过混合氢气和氟原子与氩气和氧气连接的气体获得的混合气体来对SiGe膜进行干法蚀刻。 HF适合于在反应气体中混合“氢原子和氟原子连接的气体”。反应气体适合于通过将SiGe膜的蚀刻速率设定为10〜100nm / min，相对于Si膜和SiO 4膜选择性地蚀刻SiGe膜，并且将SiGe膜的蚀刻选择率设定为相对于Si膜和SiO 4膜分别不小于10且不小于50。

6. 发明专利

JP2002009050A ASHING METHOD 失效
公开(公告)号：JP2002009050A
公开(公告)日：2002-01-11
申请号：JP2000186028
申请日：2000-06-21
申请人： SHIBAURA MECHATRONICS CORP
发明人： MUTO MAKOTO , KAMIUMA TOSHIYUKI , TAKEISHI KOJI , YAMAZAKI TOMOO
IPC分类号： G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To ash a resist film without deteriorating an organic low dielectric film and without reducing processing speed even if the organic low dielectric film exists as the lower layer of the resist film. SOLUTION: In an ashing method, an ashing processing is performed on a substrate to be processed W, which has the organic low dielectric film and the resist film formed as the upper layer. The method is provided with a first process for applying a high frequency electric field to process gas and generating ions by a bias device 5 having a high frequency power source 4, and for performing anisotropic plasma ion ashing on the resist film by the ions accelerated to the substrate to be processed W; and a second process for irradiating process gas with a microwave by a plasma generation device 7 having a microwave power source 13 after the first process and ashing the resist film by the plasma.

7. 发明专利

JP2009246088A Method for inspecting plasma processing device, inspection device, plasma processing device, method for cleaning plasma processing device, and method for manufacturing semiconductor device 审中-公开
标题翻译：用于检查等离子体处理装置的方法，检查装置，等离子体处理装置，清洁等离子体处理装置的方法和制造半导体装置的方法
公开(公告)号：JP2009246088A
公开(公告)日：2009-10-22
申请号：JP2008089821
申请日：2008-03-31
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： MUTO MAKOTO
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/31 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a method for inspecting a plasma processing device, an inspection device, the plasma processing device, a method for cleaning the plasma processing device, and a method for manufacturing the semiconductor device, in which the condition of a metal attachment inside a transport pipe is sensed. SOLUTION: The inspection method of the plasma processing device includes: a plasma generating chamber which includes a discharge tube and a microwave introduction means and generates plasma by making a microwave act on a gas introduced in the discharge tube; a plasma treatment chamber which accommodates a processed material and can maintain atmosphere which is decompressed less than atmospheric pressure; and a transport pipe which connects the plasma generating chamber and the plasma treatment chamber. The inspection gas is introduced in the discharge tube, and the microwave is introduced in the discharge tube. The plasma of the inspection gas is generated thereby. The light intensity in the plasma treatment chamber is measured. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于检查等离子体处理装置，检查装置，等离子体处理装置，清洁等离子体处理装置的方法以及制造半导体装置的方法，其中条件检测输送管内的金属附件。解决方案：等离子体处理装置的检查方法包括：等离子体产生室，其包括放电管和微波引入装置，并通过对引入放电管中的气体进行微波而产生等离子体; 等离子体处理室，其容纳加工材料并且可以维持小于大气压力的减压的气氛; 以及连接等离子体发生室和等离子体处理室的输送管。将检查气体引入放电管，并将微波引入放电管。由此产生检查气体的等离子体。测量等离子体处理室中的光强度。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2007043079A Plasma generator, method for generating plasm and plasma treatment apparatus 审中-公开
标题翻译：等离子体发生器，用于产生等离子体处理装置的方法
公开(公告)号：JP2007043079A
公开(公告)日：2007-02-15
申请号：JP2006115030
申请日：2006-04-18
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： MUTO MAKOTO
IPC分类号： H01L21/3065 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma generator, a method for generating plasm, and a plasma treatment apparatus where the treatment efficiency of a matter to be treated is high by preventing the reduction of a member of the plasma generator caused by the plasma of reducing gas or gas containing the reducing gas, and suppressing the reduction of the active kind, and charged particles of the reducing gas. SOLUTION: The plasma generator is provided with a first part which has a partition at least partially composed of a dielectric and which has a first space area where an atmosphere of pressure reduced than the earth's atmosphere can be kept, a means for introducing first gas into the first space area, a means for introducing microwaves into the first space area from the outside of the first part through the dielectric, a second part having a second space area provided so as to be connected with the first space area, and a means for introducing second gas into the second space area. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供等离子体发生器，用于产生等离子体的方法以及等离子体处理装置，其中通过防止由等离子体发生器引起的等离子体发生器的构件的还原而使被处理物的处理效率高含有还原气体的还原气体或气体的等离子体，抑制活性种类的还原，还原气体的带电粒子等。解决方案：等离子体发生器设置有第一部分，该第一部分具有至少部分地由电介质组成的分隔部，并且具有能够保持比地球大气压力降低的气氛的第一空间区域，用于引入第一气体进入第一空间区域，用于从第一部分的外部通过电介质将微波引入第一空间区域的装置，具有设置成与第一空间区域连接的第二空间区域的第二部分，以及用于将第二气体引入第二空间区域的装置。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JPH11224875A ETCHING METHOD FOR SILICON FILM 失效
公开(公告)号：JPH11224875A
公开(公告)日：1999-08-17
申请号：JP2572298
申请日：1998-02-06
申请人： SHIBAURA MECHATRONICS CORP
发明人： KASAI MASARU , ONODA TOSHIYASU , MUTO MAKOTO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching method of a silicon film capable of etching the silicon film inside a hole with good controllability and obtaining a smooth etching surface, without prolonging the processing time. SOLUTION: This method for etching a silicon film 11 formed on the surface of a mask 10 formed on a base layer 13 and in the inside of a hole 14 formed on the base layer 13 by using the mask 10 is provided with the etching process of a first stage for using gas, for which the gas containing fluorine atoms and oxygen gas are mixed as process gas and etching and removing a silicon film 11a at a part other than the inside of the hole 14 and the etching process of a second stage for using the process gas, whose ratio of the oxygen gas is higher than that of the process gas used in the etching processing of the first stage and etching and digging a silicon film 11b inside the hole 14.

10. 发明专利

JP2010206068A Plasma processing apparatus, and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2010206068A
公开(公告)日：2010-09-16
申请号：JP2009051856
申请日：2009-03-05
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： WATANABE SHIGERU , TAKEISHI KOJI , SAKAI TETSUYA , MUTO MAKOTO , MATSUSHIMA DAISUKE , SHIRAHAMA YUKI , WATANABE DAISUKE
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method that can suppress an influence on an object to be processed and improve productivity when unnecessary matter is removed. SOLUTION: The plasma processing apparatus 1 includes a processing container 6 containing the object W to be processed and being capable of maintaining an atmosphere of pressure reduced below the atmospheric pressure, a pressure reducing means 3 of reducing the pressure in the processing container, a plasma generation chamber having a space communicating with the space wherein the object to be processed is stored and generating plasma, a plasma generating means 2 of making an electromagnetic wave act on the space wherein the plasma is generated to generate the plasma, a gas supply means 4 of supplying a process gas to the space wherein the plasma is generated, a removal liquid steam supply means 30 of supplying removal liquid steam to the space wherein the object to be processed is stored, and a first temperature control means 51 of controlling the temperature of the object to be processed so as to be a temperature or below at which the removal liquid stream condenses. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够抑制对待处理物体的影响的等离子体处理装置和等离子体处理方法，并且在不必要的物质被去除时提高生产率。解决方案：等离子体处理装置1包括容纳待处理对象物W并能够将压力降低到大气压以下的气氛的处理容器6，减小处理容器内的压力的减压装置3 等离子体产生室，其具有与待处理物体相互存储并产生等离子体的空间连通的空间;等离子体产生装置2，其使电磁波作用于产生等离子体的空间以产生等离子体;气体供给装置4，其向生成等离子体的空间供给处理气体;去除液体蒸汽供给装置30，其向被处理物体存储的空间供给去除液体蒸汽;第一温度控制装置51，被处理物的温度为除去液体流冷凝的温度以下。版权所有（C）2010，JPO＆INPIT

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