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1. 发明专利

JP2013206971A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2013206971A
公开(公告)日：2013-10-07
申请号：JP2012071931
申请日：2012-03-27
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社 , Toshiba Corp , 株式会社東芝
发明人： MOTOKAWA KOJI , OIWA NORIHISA , DEMURA KENSUKE , YOSHIMORI HIROAKI , KARYU MAKOTO , KASE YOSHIHISA , TONO HIDESHI
IPC分类号： H01L21/3065 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/31 , H05H1/46
CPC分类号： H05H1/46 , H01J37/32623 , H01J37/32715 , H01J37/32724
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method which inhibit influences caused by a shape of a surface on which a processed product is placed.SOLUTION: A plasma processing apparatus according to one embodiment includes: a processing container; a decompression part decompressing the interior of the processing container to a predetermined pressure; a member having a control part which enters in a recessed part provided on a surface where a processed product is placed thereby controlling at least one of the in-plane distribution of the electrostatic capacitance of a region including the processed product and the in-plane distribution of a temperature of the processed product; a placement part provided in the processing container and where the member is placed on or fixed to an upper surface; a plasma generation part supplying electromagnetic energy to a region where plasma for performing plasma processing of the processed product is generated; and a gas supply part supplying a process gas to the region where the plasma is generated. The control part conducts control so as to uniformize at least one of the in-plane distribution of the electrostatic capacitance and the in-plane distribution of the temperature.
摘要翻译：要解决的问题：提供一种抑制由加工产品的表面形状引起的影响的等离子体处理装置和等离子体处理方法。解决方案：根据一个实施方案的等离子体处理装置包括：处理容器; 将处理容器的内部减压至预定压力的减压部件; 具有控制部件的部件，其进入设置在加工产品的表面上的凹部中，由此控制包括处理产品的区域的静电电容的面内分布和面内分布中的至少一个的加工产品的温度; 设置在所述处理容器中并且所述构件被放置在或固定到上表面上的放置部分; 向产生用于进行等离子体处理的等离子体的区域供给电磁能量的等离子体产生部; 以及向生成等离子体的区域供给处理气体的气体供给部。控制部进行控制，以使静电电容的面内分布和温度的面内分布中的至少一个均匀化。

2. 发明专利

JP2012129505A Method of manufacturing reflective mask, and apparatus of manufacturing reflective mask 有权
标题翻译：制造反光掩模的方法和制造反射掩模的装置
公开(公告)号：JP2012129505A
公开(公告)日：2012-07-05
申请号：JP2011242366
申请日：2011-11-04
申请人： Shibaura Mechatronics Corp , Toshiba Corp , 株式会社東芝 , 芝浦メカトロニクス株式会社
发明人： YOSHIMORI HIROAKI , KARYU MAKOTO , MOTOKAWA KOJI , TAKAI KOSUKE , KASE YOSHIHISA
IPC分类号： H01L21/027 , G03F1/22 , H01L21/3065
CPC分类号： G03F1/24 , G03B27/42 , G03F1/54 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a reflective mask and an apparatus of manufacturing a reflective mask which allow for improvement in productivity.SOLUTION: The method of manufacturing a reflective mask includes a step for forming a reflective layer on the main surface of a substrate, a step for forming an absorbing layer on the reflective layer, a step for forming a pattern region on the absorbing layer, and a step for forming a light-shielding region surrounding the pattern region on the absorbing layer and the reflective layer. In the step for forming a light-shielding region, the reflective layer is etched using a gas containing chlorine and oxygen.
摘要翻译：要解决的问题：提供一种制造反射掩模的方法和制造反射掩模的装置，其允许提高生产率。解决方案：制造反射掩模的方法包括在基板的主表面上形成反射层的步骤，在反射层上形成吸收层的步骤，在吸收层上形成图案区域的步骤以及用于形成围绕吸收层和反射层上的图案区域的遮光区域的步骤。在形成遮光区域的步骤中，使用含有氯和氧的气体来蚀刻反射层。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2000150643A DRY ETCHING METHOD 失效
公开(公告)号：JP2000150643A
公开(公告)日：2000-05-30
申请号：JP31791498
申请日：1998-11-09
申请人： TOSHIBA CORP , SHIBAURA MECHATRONICS CORP
发明人： KOBAYASHI AKIRA , JINBO SADAYUKI , HATTORI KEI , YOSHIMORI HIROAKI , NONAKA MIKIO , MUTO MAKOTO , KASAI MASARU , ONODA TOSHIYASU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/28 , H01L21/3065 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide an etching method for a metal film wherein a connection hole is formed at an inter-layer insulating film of a semiconductor substrate and a metal film comprising at least two layers is formed, and then a metal film other than the connection hole is removed by etching with no seam at the center of the connection hole widened. SOLUTION: An inter-layer insulating film of a semiconductor substrate 3 is etched in an etching chamber to form a connection hole while a metal film comprising at least two layers is formed in the connection hole and on the inter-layer insulating film, and then a metal film other than the connection hole is removed by etching. Here, a mixed gas fluorine atom and oxygen atom used as a reactive gas, a metal film other than a connection hole is etched with each layer substantially at the same etching speed at 150 deg.C or above or 150-250 deg.C of a semiconductor substrate. Thus, the metal film is packed in the connection hole to flatten its surface. The metal film may comprise a barrier metal layer and a tungsten film over it.

4. 发明专利

JP2014056895A Method of manufacturing reflective type mask, and apparatus of manufacturing reflective type mask 有权
标题翻译：制造反射型掩模的方法和制造反射型掩模的装置
公开(公告)号：JP2014056895A
公开(公告)日：2014-03-27
申请号：JP2012199842
申请日：2012-09-11
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社 , Toshiba Corp , 株式会社東芝
发明人： YOSHIMORI HIROAKI , KASE YOSHIHISA , KARYU MAKOTO , MOTOKAWA KOJI , OIWA NORIHISA
IPC分类号： H01L21/027 , G03F1/24 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a reflective type mask, which can suppress generation of residue even when a capping layer contains ruthenium.SOLUTION: A method of manufacturing a reflective type mask having a reflective layer provided on a substrate, a capping layer which is provided on the reflective layer and contains ruthenium, an absorbing layer provided on the capping layer, and a pattern region provided on the absorbing layer, comprises a step of forming a light shielding region surrounding the pattern region on the absorbing layer, the capping layer and the reflective layer. In the step of forming the light shielding region, the capping layer is physically dry-etched by using inert gas, and the reflective layer is chemically dry-etched by using a mixed gas of chlorine and oxygen.
摘要翻译：要解决的问题：提供一种制造反射型掩模的方法和装置，其即使当覆盖层含有钌时也能抑制残留物的产生。溶液：制造具有反射层的反射型掩模的方法，反射层设置在衬底，设置在反射层上并包含钌的覆盖层，设置在覆盖层上的吸收层和设置在吸收层上的图案区域，包括在其上形成围绕图案区域的遮光区域的步骤吸收层，覆盖层和反射层。在形成遮光区域的步骤中，通过使用惰性气体物理地干蚀刻覆盖层，并且通过使用氯和氧的混合气体对反射层进行化学干蚀刻。

5. 发明专利

JP2001015492A ETCHING DEVICE AND ETCHING MONITORING METHOD 失效
公开(公告)号：JP2001015492A
公开(公告)日：2001-01-19
申请号：JP18642299
申请日：1999-06-30
申请人： SHIBAURA MECHATRONICS CORP , TOSHIBA CORP
发明人： JINBO SADAYUKI , YOSHIMORI HIROAKI , FURUMITO NORISUKE
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching device and its monitoring method that can minimize the loss of an extremely expensive semiconductor element by rapidly finding the film quality change in an object to be etched and the fluctuations of process parameters caused by the failure in the etching device. SOLUTION: This etching device is provided with an etching chamber for etching a wafer by active gas due to plasma discharge, a photoelectric converter for detecting an electromagnetic field that is generated by plasma discharge generated in the etching chamber, and a means for obtaining a characteristic curve signal that successively has unstable, stable, descent, and flat regions, after discharge is started from the output of the photoelectric converter. Monitoring is made, so that a characteristic curve obtained by etching lies within virtual curves A and B with a width of ±Z conforming to a normal etching characteristic curve S, and it is judged that the process parameters have fluctuated, the device has failed, and the quality of an object to be etched is changed, when the characteristic curve deviates from the virtual curve, thus rapidly detecting the failure.

6. 发明专利

JP2012253142A Device and method for manufacturing substrate 审中-公开
标题翻译：用于制造基板的装置和方法
公开(公告)号：JP2012253142A
公开(公告)日：2012-12-20
申请号：JP2011123540
申请日：2011-06-01
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： KASE YOSHIHISA , KARYU MAKOTO , YOSHIMORI HIROAKI
IPC分类号： H01L21/3065 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a device and method for manufacturing a substrate in which accuracy in detecting a finishing point of etching process can be improved even when an etching object has light transmissivity and has a minute pattern.SOLUTION: The substrate manufacturing device includes a processing container, a gas supply unit for supplying a gas inside the processing container, an exhaust unit for exhausting inside the processing container, a plasma generation unit for generating plasma inside the processing container, a placing section provided in the processing container and used for placing a substrate, and a finishing point detection unit that makes detection light incident on a face of the substrate placed on the placing section, the face of the substrate being at a side facing the placing section, and detects the finishing point of the etching process on the basis of reflection light from the substrate. The finishing point detection unit makes the detection light incident on a face of the substrate from a direction perpendicular to the face, and detects the finishing point of the etching process at a part formed of a material having the light transmissivity of the substrate.
摘要翻译：要解决的问题：提供即使当蚀刻对象具有透光率并且具有微小图案时，也能够提高检测蚀刻处理的精加工精度的基板的装置和方法。解决方案：基板制造装置包括处理容器，用于在处理容器内供给气体的气体供给单元，用于在处理容器内排出的排气单元，用于在处理容器内产生等离子体的等离子体产生单元，放置部，设置在处理容器中并用于放置基板;以及终点检测单元，其使检测光入射到放置在放置部上的基板的表面，基板的表面位于与放置部并且基于来自基板的反射光检测蚀刻处理的结束点。整理点检测单元使得检测光从垂直于面的方向入射到基板的表面上，并且检测由具有基板的透光率的材料形成的部分处的蚀刻处理的结束点。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013207210A Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2013207210A
公开(公告)日：2013-10-07
申请号：JP2012076945
申请日：2012-03-29
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： YOSHIMORI HIROAKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method which improve the accuracy of the end point detection of etching process even when a thickness dimension of an etching target layer is large for a pattern dimension and a pattern is fine.SOLUTION: According to one embodiment, a plasma processing apparatus includes: a processing container that has a plasma generation region therein and may maintain an atmosphere decompressed so as to be lower than the atmospheric pressure; a gas supply part supplying a process gas to the plasma generation region; a plasma generation part supplying electromagnetic energy to the plasma generation region thereby generating plasma; a decompression part decompressing the interior of the processing container to a predetermined pressure; a placement part provided in the processing container and on which a processed product is placed; a peripheral member provided on the placement part; and an end point detection plate provided at a position of the peripheral member that faces the plasma generation region.
摘要翻译：要解决的问题：为了提供等离子体处理装置和等离子体处理方法，即使当蚀刻目标层的厚度尺寸对于图案尺寸大且图案很好时，也提高了蚀刻工艺的终点检测的精度。解决方案：根据一个实施例，一种等离子体处理装置包括：处理容器，其中具有等离子体产生区域，并且可以将大气减压至低于大气压; 向所述等离子体产生区域供给处理气体的气体供给部; 等离子体产生部，其向所述等离子体生成区域供给电磁能从而产生等离子体; 将处理容器的内部减压至预定压力的减压部件; 设置在处理容器中并在其上放置加工产品的放置部分; 设置在所述放置部上的周缘部件; 以及端面检测板，其设置在所述周边部件的与所述等离子体产生区域相对的位置。

8. 发明专利

JP2012054413A Etching processing device and etching processing method 有权
标题翻译：蚀刻加工设备和蚀刻加工方法
公开(公告)号：JP2012054413A
公开(公告)日：2012-03-15
申请号：JP2010195978
申请日：2010-09-01
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： YOSHIMORI HIROAKI , ITA KOJI , KARYU MAKOTO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching processing device and an etching processing method that can enhance dimension controllability and processing stability when a pattern comprising plural layers is formed.SOLUTION: An etching processing device 100 contains a first processing unit 140 having a processing container, a gate valve, a supply unit for supplying gas containing fluorine, an exhaust unit and a plasma generator, a second processing unit 150 having a processing container, a gate valve, a supply unit for supplying gas containing chlorine, an exhaust unit and a plasma generator, and a feeding unit 130 for feeding a processing target object through a first feed-in and feed-out port and a second feed-in and feed-out port. The first processing unit 140 removes a layer containing tantalum boron oxide formed on the processing target object so as to achieve a predetermined shape, and the second processing unit 150 removes the layer containing the tantalum boron nitride formed on the processing target object so as to achieve a predetermined shape.
摘要翻译：要解决的问题：提供一种当形成包括多层的图案时能够提高尺寸可控性和加工稳定性的蚀刻处理装置和蚀刻处理方法。解决方案：蚀刻处理装置100包括具有处理容器，闸阀，用于供应含氟气体的供应单元，排气单元和等离子体发生器的第一处理单元140，具有处理的第二处理单元150 容器，闸阀，用于供应含氯气体的供应单元，排气单元和等离子体发生器，以及用于通过第一进料口和出料口和第二进料口供给加工对象物的进料单元130，进出口。第一处理单元140去除在处理对象物体上形成的含有氧化硼的层，以达到预定的形状，并且第二处理单元150去除在处理对象物体上形成的包含钽氮化硼的层，以便实现预定的形状。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008277843A Method of cleaning semiconductor manufacturing apparatus 有权
标题翻译：清洁半导体制造装置的方法
公开(公告)号：JP2008277843A
公开(公告)日：2008-11-13
申请号：JP2008144752
申请日：2008-06-02
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： YOSHIMORI HIROAKI
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method of a semiconductor manufacturing apparatus by which moisture which adheres to an inner wall of a vacuum treatment room or the like when cleaning the inside of a vacuum treatment room of the semiconductor manufacturing apparatus is quickly removed in order to shorten a down time of the apparatus and thereby the productivity is improved. SOLUTION: The semiconductor manufacturing apparatus includes the vacuum treatment room 1, a gas lead-in port 2 and a gas exhaust port 3. A stage 1a on which a wafer is placed and is treated is prepared inside the treatment room 1, and the stage 1a is connected with a high frequency power supply outside the treatment room. In downstream of the exhaust port 3, there are provided a pressure control unit 4 and a pressure meter 6 which control exhaust quantity from the treatment room 1 and a pump 5 which exhausts air in the treatment room 1. When vacuum-exhausting the inside of the treatment room 1 after cleaning it, purge gas which does not contain moisture is fed from a gas lead-in port 2 and the pump 5 is simultaneously operated to vacuum-exhaust within the exhaust velocity range where the exhaust velocity of the using pump 5 is large. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种半导体制造装置的清洁方法，当清洁半导体制造装置的真空处理室的内部时，其中附着到真空处理室等的内壁的水分是快速去除以缩短装置的停机时间，从而提高生产率。解决方案：半导体制造装置包括真空处理室1，气体引入口2和排气口3.在处理室1内准备放置晶片并进行处理的载物台1a，台1a与治疗室外的高频电源连接。在排气口3的下游设置有压力控制单元4和压力计6，该压力控制单元4和压力计6控制来自处理室1的排气量和排出处理室1中的空气的泵5.当真空排出清洁后的处理室1，从气体导入口2供给不含有水分的吹扫气体，同时在排气速度范围内对泵5进行真空排气，其中使用泵5的排气速度很大版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2007012663A Pressure reduction treating apparatus and pressure reduction treatment method 有权
标题翻译：减压处理装置和减压处理方法
公开(公告)号：JP2007012663A
公开(公告)日：2007-01-18
申请号：JP2005187860
申请日：2005-06-28
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： YOSHIMORI HIROAKI
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a pressure reduction treating apparatus and a pressure reduction treatment method capable of shielding contaminants generated when opening and closing the door of carrying-in/out port.
SOLUTION: There are provided: a treatment vessel 1 having treatment space 3 for maintaining a pressure-reduced atmosphere to treat an object to be treated, and a carry-in port 9 for carrying in and out the object to be treated to and from the treatment space 3; a placement means for placing the object to be treated provided in the treatment vessel 1; an exhausting means that is connected to the treatment vessel 1 and exhausts the inside of the treatment vessel 1; a treatment gas or active species supply means for supplying treatment gas or an active species to the treatment space 3; a shielding body 12 that is provided between the placement means and the inner wall of the treatment vessel 1 and can move between first and second positions; and a shielding body movement means for moving the shielding body 12.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够屏蔽打开和关闭进/出口的门时产生的污染物的减压处理装置和减压处理方法。解决方案：提供：具有用于维持减压气氛以处理待处理物体的处理空间3的处理容器1和用于将待处理物体进出的进入口9 和处理空间3; 用于将待处理物体放置在处理容器1中的放置装置; 排气装置，其连接到处理容器1并排出处理容器1的内部; 用于将处理气体或活性物质供给到处理空间3的处理气体或活性物质供给装置; 屏蔽体12，其设置在放置装置和处理容器1的内壁之间，并可在第一和第二位置之间移动; 以及用于移动屏蔽体12的屏蔽体运动装置。版权所有（C）2007，JPO＆INPIT

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